HY15P03S

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P-Channel Enhancement Mode MOSFET

Pin DescriptionF

•

1

•

S S : SOP-8

HOOYIHOOYI

HOOYI

reserves the right to make changes to improve reliability or manufacturability without notice, andadvise customers to obtain the latest version of relevant information to verify before placing orders.

Ordering and Marking Information

A

P-Channel MOSFET

Note: lead-free products contain molding compounds/die attach materials and 100% matte tin platetermination finish; which are fully compliant with RoHS. lead-free products meet or exceed the lead-freerequirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature.defines “Green”to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight inhomogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

Package Code

HOOYI

HY15P03ÿYYXXXJWW G

6.6

eatures

• -30V/ -15A

RDS(ON)= m Ω (typ.) @ VGS=-10V

Avalanche Rated

• Reliable and Rugged

• Lead Free and Green DevicesAvailable

(RoHS Compliant)

pplications

150901

G : Lead Free Device Date Code Assembly Material

YYXXX WW

Top View of SOP-8

SS

SG

DD

DD

• Power Management in DC/DC Converter

8.2RDS(ON)= m Ω (typ.) @ VGS=-4.5V

-30

120***

-60**

2

Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (TC=25°C Unless Otherwise Noted)

VDSS Drain-Source Voltage

VGSS Gate-Source Voltage ±20 V

TJ Maximum Junction Temperature 150 °C

TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current TC=25°C -15 A

Mounted on Large Heat Sink

IDM TC=25°C A

TC=25°C -15 ID Continuous Drain Current

TC=70°C -12 A

TC=25°C 3.1 PD Maximum Power Dissipation

TC=70°C 2.0 W

RθJC Thermal Resistance-Junction to Case 40

RθJA Thermal Resistance-Junction to Ambient 75 °C/W

Avalanche Ratings

EAS Avalanche Energy, Single Pulsed L=0.3mH mJ

Electrical Characteristics (TC = 25°C Unless Otherwise Noted)

Note：** Drain current is limited by junction temperature

Pulsed Drain Current *

*** VD=-24V

* Repetitive rating ; pulse width limiited by junction temperature

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HY15P03S

6.6

HY15P03

-30

74

40

-30

Symbol Parameter Test ConditionsMin. Typ. Max.

Unit

Static Characteristics

BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=-250µA - - V

VDS= V, VGS=0V - - -1IDSS Zero Gate Voltage Drain Current

TJ=55°C - - -10µA

VGS(th) Gate Threshold Voltage VDS=VGS, IDS=-250µA -1.0 -3.0 V

IGSS Gate Leakage Current VGS=±20V, VDS=0V - - ±100 nA

Diode Characteristics

VSD Diode Forward Voltage ISD=-15 A, VGS=0V - -0.7 -1.0 V

trr Reverse Recovery Time - - ns

Qrr Reverse Recovery ChargeIDS=-15 A, dlSD/dt=100A/µs

- - nC

-2.0

*

8.0RDS(ON) Drain-Source On-state Resistance

VGS=-10V, IDS= -15 A - mΩ*

VGS= -4.5V, IDS= -10A 10.58.2 mΩ

461

4287

323

16

HY15P03

3

Electrical Characteristics (Cont.) (TC = 25°C Unless Otherwise Noted)

Symbol Parameter Test Conditions

Min. Typ. Max. Unit

Dynamic Characteristics

RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 3.0 - Ω

Ciss Input Capacitance - -

Coss Output Capacitance - -

Crss Reverse Transfer Capacitance

VGS=0V, VDS=-15V, Frequency=1.0MHz - -

pF

td(ON) Turn-on Delay Time - 12

Tr Turn-on Rise Time -

td(OFF) Turn-off Delay Time - 75

Tf Turn-off Fall Time

- 37

ns

Gate Charge Characteristics

Qg Total Gate Charge - 90

Qgs Gate-Source Charge - 7.8 -

Qgd Gate-Drain Charge

VDS=-24 V, VGS=-10V, IDS=-15A

- 19.3 -

nC

VDD= -24V, RG=3 Ω,IDS=-15A, VGS=-10V,

Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%.

-

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HY15P03S

-

-

-

-

4

Typical

Operating

Characteristics

-VDS - -Drain - Source Voltage (V)

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HY15P03S

0.0001 0.001 0.01 0.1 1 10

0.01

0.1

1

10

Thermal Transient Impedance

Square Wave Pulse Duration sec

Nor

mal

ized

Effe

ctiv

e Tr

ansi

ent

100

0.01

0.02

0.05

0.1

0.2

Duty = 0.5

Mounted on minimum padR

θJA : 75 oC/WSingle

Power Dissipation

Ptot

-Po

wer

(W)

Tj - Junction Temperature (°C)

Drain Current

Tj - Junction Temperature

-ID -D

rain

Cur

rent

(A)

0 20 40 60 80 100 120 140 1600.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

TA=25oC

0 20 40 60 80 100 120 140 1600

2

4

6

8

10

12

14

16

18

TA=25oC,VG=-10V

-ID

- D

rain

Cur

rent

(A)

Safe Operation Area

0.1 1 10 100 5000.1

1.0

10

100

500

1ms

Rds(on)

Limit

TC=25OC

10ms

100us

DC

5

Typical Operating Characteristics (Cont.)

RD

S(O

N) - O

n - R

esis

tanc

e (m

Ω)

Drain-Source On Resistance

-I D - Drain Current (A)-VDS - Drain - Source Voltage (V)

-ID -

Dra

in C

urre

nt (A

)

Output Characteristics

0 5 10 15 20 250

2

4

6

8

10

12

14

16

VGS

=-10V

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HY15P03S

0 1 2 3 4 50

2

4

6

8

10

12

14

16

18

20

-3V

-3.5V

-2V

VGS

= -4.0,-4.5,-10V

VGS

=-4.5V

Gate-Source On Resistance

-VGS - Gate - Source Voltage (V)

RD

S(O

N) -

On

-Res

ista

nce

(mΩ

)

Tj - Junction Temperature (°C)

Gate Threshold Voltage

Nor

mal

ized

Thre

shol

dVo

ltage

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6IDS

=-250uA

2 3 4 5 6 7 8 9 104

6

8

10

12

14

16

18IDS

=-15A

6

Typical Operating Characteristics (Cont.)

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HY15P03S

Drain-Source On Resistance

Nor

mal

ized

On

Res

ista

nce

Tj - Junction Temperature (°C) -VSD - Source - Drain Voltage (V)

Source-Drain Diode Forward

-IS

-Sou

rce

Cur

rent

(A)

-50 -25 0 25 50 75 100 125 1500.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

RON@Tj=25oC: 6.6mΩ

VGS = -10V IDS = -15A

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.40.1

1

10

30

Tj=150oC

Tj=25oC

500

-VDS - Drain - Source Voltage (V)

C -

Cap

acita

nce

(pF)

Capacitance Gate Charge

QG -Gate Charge (nC)

VG

S -

Gat

e-so

urce

Vol

tage

(V)

0 13 26 39 52 65 78 910

1

2

3

4

5

6

7

8

9

10

0 5 10 15 20 25 30 35 400

1000

1500

2500

3000

3500

4000

4500

5000Frequency=1MHz

CrssCoss

Ciss

2000

VDS= -24V IDS= -15A

7

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HY15P03S

Avalanche Test Circuit and Waveforms

EAS

VDD

tAV

IAS

VDS

tp VDSX(SUS)

DUT

0.01Ω

VDD

VDSL

IL

RG

tp

Switching Time Test Circuit and Waveforms

td(on) tr td(off) tf

VGS

VDS90%

10%

VDD

RD

DUT

VGS

VDS

RG

tp

HY15P03S

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Package Information

SOP-8

RECOMMENDED LAND PATTERN

UNIT: mm

A

A1

A2

LVIEW A

0.25

SEATING PLANEGAUGE PLANE

1.27

5.74

2.2

2.87

0.6350.8

D

e

EE1

b

SEE VIEW A

c

hX

45°

SEATING PLANE < 4 mils-T-

Note: 1. Follow JEDEC MS-012 AA. 2. Dimension D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E” does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed 10 mil per side.

SYMBOL MIN. MAX.1.75

0.10

0.17 0.25

0.25A

A1

cD

EE1ehL

MILLIMETERS

b 0.31 0.51

SOP-8

0.25 0.500.40 1.27

MIN. MAX.INCHES

0.0690.004

0.012 0.0200.007 0.010

0.010 0.0200.016 0.050

0

0.010

1.27 BSC 0.050 BSC

A2 1.25 0.049

0 8 0 8

3.805.804.80

4.006.205.00 0.189 0.197

0.228 0.2440.150 0.157

--

- -

°°°°

HY15P03S

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Application A H T1 C d D W E1 F 330.02.00 50 MIN. 12.4+2.00

-0.0013.0+0.50

-0.20 1.5 MIN. 20.2 MIN. 12.0 0.30 1.75 0.10 5.5 0.05

P0 P1 P2 D0 D1 T A0 B0 K0 SOP-8

4.0 0.10 8.0 0.10 2.0 0.05 1.5+0.10 -0.00 1.5 MIN. 0.6+0.00

-0.40 6.40 0.20 5.20 0.20 2.10 0.20

(mm)

Carrier Tape & Reel Dimensions

H

T1

A

d

A

E1

AB

W

F

T

P0OD0

BA0

P2

K0

B0

SECTION B-B

SECTION A-A

OD1

P1

HY15P03S

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Taping Direction Information

SOP-8

USER DIRECTION OF FEED

Classification Profile

11

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HY15P03S

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts)

100 °C 150 °C

60-120 seconds

150 °C 200 °C

60-120 seconds

Average ramp-up rate (Tsmax to TP) 3 °C/second max. 3°C/second max.

Liquidous temperature (TL) Time at liquidous (tL)

183 °C 60-150 seconds

217 °C 60-150 seconds

Peak package body Temperature(Tp)*

See Classification Temp in table 1 See Classification Temp in table 2

Time (tP)** within 5°C of the specifiedclassification temperature (Tc)

20** seconds 30** seconds

Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.

** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Classification Reflow Profiles

Table 2. Pb-free Process – Classification Temperatures (Tc)

Package Thickness

Volume mm3

<350 Volume mm3

350-2000 Volume mm3

>2000 <1.6 mm 260 °C 260 °C 260 °C

1.6 mm – 2.5 mm 260 °C 250 °C 245 °C ≥2.5 mm 250 °C 245 °C 245 °C

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package

Thickness Volume mm3

<350 Volume mm3

≥350 <2.5 mm 235 °C 220 °C ≥2.5 mm 220 °C 220 °C

Reliability Test ProgramTest item Method Description

SOLDERABILITY JESD-22, B102 5 Sec, 245°C HTRB JESD-22, A108 1000 Hrs, 80% of VDS max @ Tjmax HTGB JESD-22, A108 1000 Hrs, 100% of VGS max @ TjmaxPCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C TCT JESD-22, A104 500 Cycles, -65°C~150°C

12

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Preheat & Soak Temperature min (Tsmin) Temperature max (Tsmax) Time (Tsmin to Tsmax) (ts)

100 °C 150 °C

60-120 seconds

150 °C 200 °C

60-120 seconds

Average ramp-up rate (Tsmax to TP) 3 °C/second max. 3°C/second max.

Liquidous temperature (TL) Time at liquidous (tL)

183 °C 60-150 seconds

217 °C 60-150 seconds

Peak package body Temperature (Tp)*

See Classification Temp in table 1 See Classification Temp in table 2

Time (tP)** within 5°C of the specified classification temperature (Tc)

20** seconds 30** seconds

Average ramp-down rate (Tp to Tsmax) 6 °C/second max. 6 °C/second max.

Time 25°C to peak temperature 6 minutes max. 8 minutes max.

* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

Classification Reflow Profiles

Table 2. Pb-free Process – Classification Temperatures (Tc)

Package Thickness

Volume mm3 <350

Volume mm3 350-2000

Volume mm3 >2000

<1.6 mm 260 °C 260 °C 260 °C 1.6 mm – 2.5 mm 260 °C 250 °C 245 °C

≥2.5 mm 250 °C 245 °C 245 °C

Table 1. SnPb Eutectic Process – Classification Temperatures (Tc) Package

Thickness Volume mm3

<350 Volume mm3

≥350 <2.5 mm 235 °C 220 °C

≥2.5 mm 220 °C 220 °C

Reliability Test Program

Test item Method Description SOLDERABILITY JESD-22, B102 5 Sec, 245°C HOLT JESD-22, A108 1000 Hrs, Bias @ 125°C PCT JESD-22, A102 168 Hrs, 100%RH, 2atm, 121°C TCT JESD-22, A104 500 Cycles, -65°C~150°C

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HY15P03S

Customer ServiceWorldwide Sales and Service: sales@hooyi.cc Technical Support: Technology@hooyi.ccXi’an Hooyi Semiconductor Technology Co., Ltd.East Side of 2# Plant,No.105,5th Fengcheng Road,Economic and Technological Development Zone,Xi'an,China TEL: (86-029) 86685706FAX: (86-029) 86685705E-mail: sales@hooyi.ccWeb net: www.hooyi.cc