overview of nanofabrication material depostion methods –thin films of materials –thickness...
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Overview of Nanofabrication
• Material depostion methods– Thin films of materials– Thickness measurement
• Lithography– Pattern transformation on to planar suface– Direct write, or mask reproduction
• Imaging and Metrology methods– Electron Microscopy– Scanning probe microscopy
Thin film deposition techniques
• Vacuum deposition Methods– UHV (<10-8), HV– Sputtering– CVD– Laser Oblation– Thermal deposition
• Boat or crucible, E-gun
– Epitaxy, growth models
Sputtering
Ar, N2
Vacuum + 10-3 Torr Ar
RF Power
Ar
Target material
substrate
B
E
•RF plasma rectifies RF power, gives DC acceleration voltage
•Ions circle B field lines, increase colisson probability
E-beam evaporator
E-gunFilament
HV
Permanent Magnet
B
Thermal CVD system
http://www.iljinnanotech.co.kr/en/material/r-4-4.htm
Precurser GasFor growing Carbon Nanotubes
Carbon Nanotubes
http://www.iljinnanotech.co.kr/en/material/r-4-4.htm
MBE
"Molecular Beam Epitaxy is a versatile technique for growing thin epitaxial structures made of semiconductors, metals or insulators."
In a ultra-high vacuum, a beam of atoms or, more general, a beam of molecules is directed towards a crystalline substrate such that the atoms or molecules stick at the substrate’s surface forming a new layer of deposited material. But where is the difference between MBE and other material deposition methods as e.g. thermal vacuum evaporation?
http://www.wsi.tu-muenchen.de/E24/resources/facilities.htm
MBE and surface analysis chamber
The Knudsen Cell (effusion cell)
http://www.grc.nasa.gov/WWW/RT2002/5000/5160copland.html
Lithography
• Spin coat radiation sensitive polymer - Resist• Expose layer (through mask or direct write)• Develop• Etch away or deposit material
Positive and negative resist
Liftoff requires undercut
Resist Contrast Curve
D1 D2
100%
0%
Film
Ret
entio
n
1
1
2log :Contrast
D
D
D1 D2
100%
0%
Film
Ret
entio
n
Negative Resist Positive Resist
Logarithmic measure of slope of contrast curve
Positive Resist Chemistry
Molecular weight shift
Typical Positive Resist processEXAMPLE PROCESS: AZ5206 POSITIVE MASK PLATE
• Soak mask plate in acetone > 10 min to remove the original photoresist. Rinse in isopropanol, blow dry.
• Clean the plate with RIE in oxygen. Do not use a barrel etcher. RIE conditions: 30 sccm O2, 30 mTorr total pressure, 90 W (0.25 W/cm2), 5 min. • Immediately spin AZ5206, 3 krpm. • Bake at 80 C for 30 min. • Expose with e-beam, 10 kV, 6 C/cm2, Make sure the plate is well grounded. (Other accelerating voltages may be used, but the dose will be different.) • Develop for 60 s in KLK PPD 401 developer. Rinse in water. • Descum - important Same as step 2 above, for only 5 seconds Or use a barrel etcher, 0.6 Torr oxygen, 150W, 1 min. • If this is a Cr plate, etch with Transene Cr etchant, ~1.5 min. If this is a MoSi plate, then RIE etch: 0.05 Torr total pressure, 0.05 W/cm2, 16 sccm SF6, 4.2 sccm CF4,1 min. • Plasma clean to remove resist: same as step 2 above, for 3 min.
Negative Resist Cemistry
Typical Negative resist process
EXAMPLE PROCESS: SAL NEGATIVE MASK PLATE•Soak mask plate in acetone > 10 min to remove photoresist. •Clean the plate with RIE in oxygen. Do not use a barrel etcher. RIE conditions: 30 sccm O2, 30 mTorr total pressure, 90 W (0.25 W/cm2), 5 min. •Immediately spin SAL-601, 4 krpm, 1 min. •Bake in 90 C oven for 10 min. This resist is not sensitive to room light. •Expose at 50 kV, 11 C/cm2. Be sure the plate is grounded. •Post-bake for 1 min on a large hotplate, 115 C. •Cool for > 6 min. •Develop for 6 min in Shipley MF312:water (1:1) Be sure to check for underdevelopment. •Descum 30 s with oxygen RIE: same as step 2, 10 s. •Etch with Transene or Cyantek Cr etchant, ~1.5 min. •Plasma clean to remove resist: Same as step 2, 5 min.
Photo Lithography
• Project UV light through Mask– Non contact with optical reduction (typical 4X)– Contact with one-to-one pattern transfer
– Mask – very flat SiO2 plate with Cr thin film
– Resolution limited by wave length (phase shift)– Optics hard for short wave lengths
Electron Beam Lithograpy
• Literature, Resources – Handbook of Microlithography Micromachining and
Microfabrication, ed. P. Rai-Choudhury, SPEI press (chapter two is on the web, linked from home page
– J C Nabity web site: http://www.jcnabity.com
Course material is posted on web site in restricted area:http://www.nanophys.kth.se education Intro. to e-beam Lithography
Link to restricted area (password protected)
Username: ebeamlecturePassword: lithogr
Some things you can do with EBL
Circuit of SQUIDs and Josephson Tunnel Junctions
1.5 mm
Contact “cage” to nano-circuit -- for rapid testing
Bonding Pads
ConnectingStrips
100 nm Al
Co
Circuit to measure spin injection from ferromagnet (Co) to normal metal (Al)
Ferromagnetic - Normal metal tunnel junctions
Innerdigitated Capacitor incoplanar waveguide
Cooper Pair Transistor
All these structure were made with
one layer of e-beam lithography and one vacuum deposition cycle!
Block Diagram on an EBL system
Electron Optics
detector
sample
Scanning the electron beam
Aperture
Lens
– convergence angle
Beam diameter2222dcsg ddddd
Electron scattering limits resolution
Higher energy electrons have larger back-scattering range
Double Gaussian profile
Overview of systems
• SEM conversion (NPGS)• SEM modification (Raith)• High end system
– SEM conversion limited in speed by slow beam deflection system (induction in magnet coils).
– Laser stage is big step in price, but necessary for accurate pattern writing and stitching.
– The more complex the system, the more service and higher user costs
– Industry Fab. machines not always well suited to research needs.
NPGS• Joe Nabity, one man company, good reputation, very helpful, good support• Works with many SEMS• Can do stage control, many SEMs come with micrometer, motor control
(accuracy)• Can do precision alignment in single field by scanning in reduced area to find
mark. Manual mark detection.
Good Web site: http://www.jcnabity.com list of references, pictures, ideas
Fabricated with NPGS
This picture shows part of a circular grating with a period of 0.15 microns. The lines appear almost straight, because they are near the outer edge of the grating where the radius is ~100 microns. The pattern was written in PMMA and has been coated with gold for viewing. The lithography was done at the Optical Sciences Center at the University of Arizona.
This image shows a pattern of radially placed dots in PMMA after development. The white bar at the bottom of the image is 1 micron long. The pattern was designed as radial lines, but the spacing of the exposure points was set 0.3 microns to produce discrete dots. Notice how the dot size and spacing is very consistent in all directions. The exposure was done with an SEM with no beam blanker and the image was taken with the NPGS digital imaging feature. The pattern was written by Dr. ChiiDong Chen at the Institute of Physics, Academia Sinica, Taiwan.
Proven resolution with our Raith 150 courtesy of Anders Holmberg
L= 80 nm 50 nm 30 nm 25 nm
20 nm 18 nm 16 nm 15 nm
L=Line width (pitch = 2L)
High End system, designed for Industry Fab.
Nanophys positive process for one-cycle tunnel junction fabrication
• Two layer resist, selective developers• Very large undercut – suspended bridge• Tunnel junction (top and base layer) in one layer
Top view of pattern
Exposed areas
Supporting resist
Undercut region
Next slides:Cut on this axis
Lithography and shadow
evaporation
ZEP 520
PMGI SF7
SiOx
Si
Lithography and shadow
evaporation
Irradiate with electron beam
Lithography and shadow
evaporation Develop the two layers selectively
Top layer: Bottom Layer:
Lithography and shadow
evaporation
Evaporate Al at an angle
Lithography and shadow
evaporation
Oxidize the first layer
Lithography and shadow
evaporation
Evaporate Al at opposite angle
Lithography and shadow
evaporation
Lift off the resist and excess metal
Tunnel junctions
Circuit of SQUIDs and Josephson Tunnel Junctions
Voilà
3D structuring using contrast curve
•Accurately measure thickness of film
•Do test pattern with dose profile to accurately measure contrast curve
Patterning in third dimensionth
ickn
ess
Dos
e
Desired structure:
Holography
Chalmers Group, S. Hård et al.Applied Optics vol. 33 p 1176, 1994
Positive electron resist SAL 110 Developer SAL 101
(Shipley)
Optical Kinoforms
Chalmers Group, S. Hård et al.Applied Optics vol. 33 p 1176, 1994Optical Comm. Vol. 88, p 37, 1992
Two basic types of pattern methods
• Direct Writing– Change pattern with each run– Slow, serial method of fabrication– Good for research and development– Low through-put, too costly for large scale production
• Lithography– pattern copying one process step– Fast, parallel method– High through-put makes low cost in large scale prod.– Not flexible enough for research and development.
Comparison of Lithographic methods
• Photo Lithography– UV, deep UV– Projection or contact
• Micro contact printing– Stamp formed from Soft material– Molecules (ink) is wet on to stamp, transferred
to surface
• Printing Press
Micro Contact printinghttp://www.research.philips.com/technologies/light_dev_microsys/softlitho/
Stamp fabrication
•Master made by direct writing methods (EBL on Si + etch)•Stamp gets dirty, wears out•Essentially old-style printing methods scaled to nm dimensions
SAM’s and molecular electronics
Optical Stepperhttp://www.sematech.org http://www.nanonet.go.jp/
For example: Nikon optical steppers
High through-put direct writing tool
http://www.micronic.se
Sigma 700 series from Micronic Laser systems, Täby Sweden
Spatial Light Modulator (SLM) chip10 6 electronically addressable mirrors
Alignment and overlay
• Alignment and overlay are more serious problems than actually making the small structure!
• Large area with fine detail requires “stitching” write fields together – laser interferometer stage, nm position and metrological accuracy!
• Overlay requires accurate alignment marks, mark detection, registration and extremely accurate pattern placement over large area (scaling accuracy 1 part 106).
3-layer process done in Albanova
Industry has MUCH more sophisticated circuits with 15-20 layers, 108 components, with very accurate overlay
Metrology and Imaging
• Laser interferometers on Stage– 5nm “resolution”– Reproducibility
• Thickness measurement– Profilometer, demonstration
• Scanning Probe microscipe– Vertrical resolution 1 Å level– Latteral resolution depends on tip sharpness
SPM system overview
Scanning Tunneling Microscopy (STM)Binnig and Rohrer 1981 (Nobel Prize in Physics 1986)
))(22
exp( 0 dEUmPI
Electric current proportional to quantummechanical probablility amplitude of ”tunneling”through the energy barrier
Wave´function decays eponentially in barrier region
z
)(zE(z)
E0 U
d
Single Atom imaging possible
•Sharp tip•Pristine surface •Ultra High Vacuum
The making of a Quanum CorralFe atoms on a Cu (111) surface
http://www.almaden.ibm.com/vis/stm/gallery.html
Check out this web page
Atomic Force Microscopy (AFM)
Two Basic AFM Modes:Contact mode (no vibrating tip)
Tapping mode (vibrating tip)
Many variations on Scanning Force Microscopy :Liquid AFM
Magnetic Force Microscopy (MFM)Latteral Force Microscopy (LFM)Intermitant and non-contact AFM
Force Modulation Microscopy (FMM)Electrostatic Force Microscopy (EFM)
Atomic Forces
Hard core repulsionContact region
Attractive force: van der WallsNon-contact retion
Force
zSeperation between tip and surface
Image molecular monolayers in liquid
S-layer protein monolayer on Si surfacein liquid environment, 500 nm x 500 nm
Zentrum für Ultrastrukturforschung - Universität für Bodenkultur. Austria
•Molecules must be immobilized on surface
•Local force measurements possible
Two basic scanning modes
1. Feedback off: Scan over surface with constant z0 (piezo voltage), control signal changes with tip-surface separation.
2. Feedback on: circuit regulates z piezo voltage to constant value of control signal (constantly changes tip-surface separation).
AFMContact mode
AFM tapping mode
Free space oscillation of cantileverresonance 10-100 kHz
Cantilever hits surfacesmaller amplitude of oscillation
Feedback loop tapping mode
Free oscillationLarge amplitude
Hitting surfacelower amplitude
Digital Insturments Multi-Mode
head, scanner and base
• Turn on the controller (the computer should be left on)
• Remove the scanner from under the microscope.