outgas testing update on euv light vs. electron...
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IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
Outgas Testing Update on EUV Light vs. Electron beam
Toshiya Takahashi, Norihiko Sugie, Kazuhiro Katayama, Isamu Takagi Yukiko Kikuchi, Eishi Shiobara, Hiroyuki Tanaka, Soichi Inoue
EUVL Infrastructure Development Center, Inc.
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
Outline
2
1. Introduction : EIDEC Resist Outgassing Program
2. Exposure Tools : EUV Light and Electron beam
3. Current Status of Resist Qualification System
4. Schedule
5. First Results
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012 3
EIDEC Resist Outgassing Control Program
Mission
To function as resist outgas qualification center.
To check the reliability of resist outgas qualification system by comparing EUV light and Electron beam(EB), as method.
To propose guidelines for resist material designs.
Member : FUJIFILM, JSR, SanDisk, Shin-Etsu, TOK, TOSHIBA
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
Tool 1: High Power EUV Exposure Tool (located in Hyogo)
4
Witness Sample
(Ru/Multilayer)
Undulater light
Resist sample
ΘーX Stages
27°
Witness Sample
(Ru/Multilayer)
Undulater light
Resist sample
ΘーX StagesΘーX Stages
27°
New SUBARU Storage Ring
Long Undulator
Undulator
Light
BL09
◆Base Pressure 2~4 E-6 Pa ◆Exposure Pressure 1~2 E-5 Pa
267mW/cm2
85mW/cm2
Exposed Wafer (200mmφ)
HERC analysis tool (High power EUV Resist Contamination)
25mmφ Exposed Area
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
Tool 2: EB based Tool EUVOM-9000 (located in Tsukuba)
5
EB
Resist Witness Sample
EB
Exposed Wafer (300mmφ)
Contamination Growth Measured by SE on WS
◆Base Pressure 2~4 E-6 Pa ◆Exposure Pressure 1~2 E-5 Pa
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
Current Status of Resist Qualification System
We are planning to start resist qualification test in Q2 2012.
6
3/b
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
Process Flow & Infrastructure
Contamination Growth Exposure @EUVOM-9000
Non-cleanable Film Analysis
@XPS
Contamination Film Thickness Measurement
@SE
Pre-cleaning @ #1 or #2 Cleaner
Contamination Film Cleaning
@ #1 or #2 Cleaner
Resist Coating @ ACT12
Resist Thickness Measurement
@SE
E0 Thickness Measurement
@SE
E0 Exposure @ EUVOM-9000
E0 Development & Resist Coating
@ACT12
Wafer Process WS Process
XPS
EUVOM-9000 (LTJ) with Cleaner #1
Stand Alone Cleaner #2 (EUV Technology)
SE M-2000X (J.A.Woollam)
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Estimated throughput for qualification : 30~40 samples/month
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
FY 2011 2012 2013
Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3 Q4
EB based
outgas
evaluation
Correlation
EUV vs. EB
EUV based
outgas
evaluation
Tool installation
Clarifying issues for 11nmhp
Preliminary Evaluation
Procedure Fix
Tool enhancement
Non-cleanable component analysis
Collaboration
with Univ. of Hyogo
Program Schedule
1st Correlation EUV vs. EB
2nd Correlation EUV vs. EB
Criteria for 20~16nmhp
Resist Outgas Qualification
8
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
First Results
9
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
Hybrid-1
Hybrid-3
Methacrylate
PHS
0.0
2.0
4.0
6.0
8.0
10.0
5.0 6.0 7.0 8.0 9.0 10.0
Hig
h P
ow
er
EUV
(m
J/cm
2)
Low Power EUV (mJ/cm2)
Dose to Clear (E0)Low Power EUV vs. High Power EUV
Dose to Clear Comparison
10
・ Linear correlation between High Power EUV and Low Power EUV was observed.
HER
C w
ith
Un
du
rato
r
Energetiq source (10W / 2πsr)
Hybrid-1
Hybrid-3
Methacrylate
PHS
0.0
2.0
4.0
6.0
8.0
10.0
0.0 1.0 2.0 3.0 4.0 5.0
Hig
h P
ow
er
EUV
(m
J/cm
2)
EB-gun (uC/cm2)
Dose to Clear (E0)EB vs. High Power EUV
EUVOM-9000
・ Clear correlation between High Power EUV and EB was not observed. In this study, we used the resist E0 measured for each tools, respectively.
EB (uC/cm2)
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
Hybrid-1 Hybrid-1 (Large PAG)
Hybrid-3
Methacrylate
PHS
0
0.5
1
1.5
2
2.5
3
0 0.5 1 1.5 2 2.5 3
Hig
h P
ow
er
EUV
(n
m)
EB (nm)
Cleanable Contamination Comparison
11
Based on the obtained resist E0, linear correlation of cleanable contamination was confirmed between High Power EUV and EB.
Measured with Spectroscopic ellipsometer
High Power EUV
Electron Beam
Do
se=2
.5xE
0, A
rea=
12
inch
Dose=E0, Area=12inch
Correlation of Contamination Thickness
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
Non-cleanable Contamination Comparison on exposed area
12
The presences of Sulfur and Silicon were confirmed on both High Power EUV and EB samples.
Correlation of non-cleanable contamination was acceptable on exposed area.
Non-cleanable contaminations were investigated with XPS analysis.
0.0
2.0
4.0
6.0
8.0
S Si Zn F P W
6.0
1.8 <0.1 <0.1 <0.1 <0.1
0.02.04.06.08.0
S Si Zn F P W
7.1
0.9 0.2 <0.1 <0.1 <0.1
■ non-cleanable contamination
Methacrylate resist High Power EUV
Electron Beam
Res
idu
al E
lem
en
t
(ato
mic
%)
Res
idu
al E
lem
en
t
(ato
mic
%)
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012
Non-cleanable Contamination Comparison on un-exposed area
13
A large amount of Fluorine was detected only on un-exposed area of High Power EUV sample. The presence of Fluorine was not clearly observed on un-exposed area of EB sample, in this study.
On un-exposed area, non-cleanable contaminations were also investigated.
Exposed Area
Un-exposed Area
0.0
2.0
4.0
6.0
8.0
S Si Zn F P W
6.0
1.8
<0.1 <0.1 <0.1 <0.1
5.8
2.0
<0.1
4.6
<0.1 <0.1
Exposed AreaUn-exposed Area
0.0
2.0
4.0
6.0
8.0
S Si Zn F P W
7.1
0.9 0.2 <0.1 <0.1 <0.1
7.2
0.8 0.2 <0.1 <0.1 <0.1
Res
idu
al E
lem
ent
(a
tom
ic %
)
High Power EUV
Electron Beam
Res
idu
al E
lem
ent
(a
tom
ic %
)
Methacrylate resist
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012 14
Acknowledgement
This work was supported by NEDO (New Energy and Industrial Technology Development Organization).
IEUVI Resist TWG, San Jose, CA Feb. 12, 2012 15
Thank You