optics for euv lithographyeuvlsymposium.lbl.gov/pdf/2005/pres/39 3-op-12 kuerz.pdf · lithography...
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Lithography Optics Division
Optics for EUV Lithography
Peter Kürz, Thure Böhm, Stephan Müllender, Wolfgang Bollinger, Manfred Dahl, Martin
Lowisch, Christian Münster, Frank Rohmund, Thomas Stein, Erik Louis, Fred Bijkerk
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Lithography Optics Division
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Design example
A collector module has been qualifed and is usedto test the illuminator at wavelength.
The early projection opticsis in the qualification phase
EUV alpha demo tool: Status at Zeiss
Key specificationsλ 13.5 nm NA 0.25Resolution 50 nmfield 26x33 mm2
Magnification 4x
One illuminator hasbeen qualified
and the secondis in process
N. Harned et al: this conference
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Lithography Optics Division
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Illuminator
All mirrors have beenfabricated and coated
EUV qualification has beenfinished
System fully assembledand aligned
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Lithography Optics Division
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EUV qualification: hardware
@ λ illuminator metrology tool
„reticle stage“ for metrology
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Lithography Optics Division
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Camera
Lens
Metrology Reticle
Scintillator
Vacuum window
EUV Radiation
Scales, Markers
Reticle Stage
Metrology
EUV qualification: Results (1)
Magenta lines: circles around optical axis
Stitching of 3 Images
Ring field measurement
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Lithography Optics Division
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EUV qualification: concept for field and pupil qualification
Camera
Lens
Metroloty Reticle, Pinhole
Telecentricity Screen
Vacuum window
Reticle Stage
Setup for Pupil Qualification
Metrology-Reticle
Slit + Filter +EUV-Photodiode Field
Scanning field with slit EUV photodiode. Integration in y-direction.
Setup for Field Qualification
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Lithography Optics Division
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Uniformity EUVL-Source+SoCoMo+IlluMo, 21. Sept. 2005, 09:40
0.95
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
1.04
1.05
-60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60
x @ Reticle (mm)
Nor
mal
ized
Inte
nsity
measured uniformity at recticleplane < 2.5 %
Pupil: Telecentricity < 0.5%Ellipticity < 10% (calculated value for Sn source)
EUV qualification: Results (2)
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Lithography Optics Division
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Projection Optics Box
reticle
wafer
Status:• all mirrors fabricated and coated
• assembly complete
• system metrology has been set up
• the POBox is in the qualification phase
Design example
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Lithography Optics Division
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Status POBox: System Metrology
POBox test lens on system inteferometer
System Metrology for POBox alignment/qualification has been set up
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Lithography Optics Division
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Early POBox: Alignment Status
Status today: - POBox is in the final qualification phase
Performance prediction:- 50 nm dense lines can be printed with the early POBox
248nm illumination (*converted by phosphor screen): image of the reticle mask in the wafer plane
July 22: first light
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Lithography Optics Division
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2D-isotropic PSD
Errors … causes ….:
Challenge: reach about 0.2 nm rms for Figure, MSFR and HSFR simultaneously
Lateral Frequency [μm-1]
figure aberrations
Figure
MSFR Flare, contrast
in field of view scattering
MSFR
Optics Technology (1): Fabrication of EUV mirrors
HSFR reflectivity
HSFR
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Lithography Optics Division
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Main challenge: flare reduction
( )2
24 ⎟⎟⎠
⎞⎜⎜⎝
⎛=
λπ surfacerms
TIS
Due to the very small wavelength EUV imaging is sensitive to scatter !!!
Total integrated scatter
2surfacemirrors rmsnTIS ⋅∝
Reduction of mid spatial frequency rms is essential to reduce the flare level
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Lithography Optics Division
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flare reduces overlapof process windowsdue to dose offsets
proximity effects in dependence of thelocal reticletransmission
largest impact of flare on isolatedfeatures on bright-field masks
sensitivity of CD to dose errorsbecomes larger
Dose-to-targetchange
No flareWith flare
Main challenge: flare reduction
CD
Intensity cross-section
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Lithography Optics Division
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0
5
10
15
20
25
early POB AD 1 AD 2 productiontool
flare
[%]
Flare roadmap
target
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Lithography Optics Division
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MSFR at fine figuring processes
0.15
0.17
0.19
0.21
0.23
0.25
0 20 40 60 80 100 120
relative material removal / %
MSFR
/ %
EUV mirror fabrication: Process development
Critical process step: Fine Figuring
Relative material removal: 100% is representative for reaching figure spec on alphademo tool mirror
technology to reach MSFR of ≤ 0.2 nm rms on alpha tool mirrorshas been established (16% flare tool)
Mirror for 16% flare tool: M1 - 0.19 nm
MSFR = 0.2 nm rmsnm
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Lithography Optics Division
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Learning curve – mid spatial frequency roughness
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
0.50
0.55
2000 2001 2002 2003 2004 2005 2006 2007 2008 2009
MSF
R [n
m rm
s](e
valu
ated
over
4.6
deca
des)
test mirror
Set 3
Set 1
Set 2
test mirror(MSFR opt.)
MET AD
early POBmirrors
M116% flare
production tool target
23 % flare
6% flare
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Lithography Optics Division
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Optics Technoloy (2): Coatings
Recent developmentat FOM
xy
A complete set of alpha tool mirrorshas been coated at FOM…
… and ZeissNew capping layer:
reflectance 68.5%comparable to uncapped multilayer
New capping layer:reflectance 68.5%comparable to uncapped multilayer
0%
10%
20%
30%
40%
50%
60%
70%
12.8 13 13.2 13.4 13.6 13.8 14
Wavelength [nm]
Ref
lect
ance
@ 1
.5 º
E. Louis et al: this conference
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Lithography Optics Division
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• alpha tool program is progressing:• illuminator
• alignment and EUV qualification has been finished• POBox
• all mirrors have been fabricated and coated• system metrology for the POBox is operational• the POBox has been assembled and is in the qualification phase
• technology development• 16% flare capability has been demonstrated on AD tool mirrors• new high reflectivity cap layer has been developed
Summary
EUV Optical Technology at Carl Zeiss SMT AG: has reached α-tool specsis progressing towards production tool capability
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Lithography Optics Division
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Thanks to a huge team effort at…
• FOM-Rijnhuizen• TNO TPD• PTB-BESSY• Philips• The teams at ASML and Zeiss• …and many others
Part of this work was supported by:
Acknowledgment
Bundesministerum für Bildung und Forschung Projekt „Grundlagen der EUV-Lithographie“ 13N8088, MEDEA Project „EXTATIC“ and European Commission Project 507754 „More Moore“
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Lithography Optics Division
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