on semiconductorelectrical characteristics all the parameters are given in the capless configuration...

26
Semiconductor Components Industries, LLC, 2008 April, 2008 Rev. 11 1 Publication Order Number: NCP2809JP/D NCP2809 Series NOCAPt135mWステレオ・ ヘッドフォン・パワー・アンプ NCP2809は、費用いステレオ・オーディオ・パワ ー・アンプで、16W負荷に対しチャネルあたり135mWの平 力を連続的に供できます。 NCP2809オーディオ・パワー・アンプは、低い電源電圧か の出力力を提供するように設計されており、 な外付け品は常にわずかです。ブートストラップ・ コンデンサやスナバ回を必としないため、消費電力の小 さい携帯器に最です。NCP2809Aの内ゲインは0dBであ り、NCP2809Bを使して外から固の外ゲインをできます。 アプリケーションで可な場合、このデバイスが提供する 仮想グランドをヘッドセットの中に接できます(Figure 1)。このような場合、一に使される2個の大型カップリン グ・コンデンサをくことができます。あるいは、外付けカ ップリング・コンデンサをいてシングル・エンド・モード で両方の出力を使することもできます (Figure 43)電源除(PSRR)がすぐれているためバッテリに接接でき、LDOが不となります。 特長 5.0V電源から16W負荷135mWを供 常にPSRR(85dB標準) バッテリに接接 「ポップ/クリック」ノイズ保 消費電流シャットダウン・モード 2.2V5.5V動作 すぐれた全高調波歪+ノイズ(THD+N)0.01%未満 ターンオン/ターンオフ機能 熱過負荷 NCP2809B超薄UDFNパッケージ(3mm x 3mm)で供 フリー・パッケージあり 代表的アプリケーション 携帯電話 ポータブル・ステレオ MP3プレーヤ デスクトップ/ノートブック・コンピュータ Micro10 DM SUFFIX CASE 846B 1 10 PIN CONNECTIONS IN_R OUT_R SD BYP REF_I V M V P 1 10 2 3 4 9 8 7 MARKING DIAGRAM IN_L 5 OUT_L 6 MAx AYWG G OUT_I See detailed ordering and shipping information in the package dimensions section on page 22 of this data sheet. ORDERING INFORMATION x = E for NCP2809A C for NCP2809B A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = PbFree Package http://onsemi.com (Note: Microdot may be in either location) 10 PIN DFN MU SUFFIX CASE 506AT (Top View) Micro10 2809B ALYWG G IN_R OUT_R SD BYP REF_I V M V P 1 10 2 3 4 9 8 7 IN_L 5 OUT_L 6 OUT_I (Top View) UDFN10

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Page 1: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

Semiconductor Components Industries, LLC, 2008

April, 2008 − Rev. 111 Publication Order Number:

NCP2809JP/D

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NCP2809������������� �����������16��������������135mW�� �!"��#��$%&'

NCP2809� �����������(�� �)*+�,��-!�!".#&/01�����2345��6�789:�,��;�<=*�&'>�?�?@A��B� �CD�EFG�"6�H�7��I����!�J2�KL�M�N��&'NCP2809A�O�PQ��0dB����NCP2809B"R��48�*+S��8�PQ�"�T�$%&'��UV�WX��Y�7Z[�\� FQ�].#&/^_`@�a"bAacA?�d��e�$%&(Figure1)'\�017Z[�f��R�23/2g�hijA�U�`�B� �C"�k\H]�$%&'�/���89:jA�U�`�B� �C"��4W�`��l�a�m�a�no�-!"R�&/\Hp�$%& (Figure 43)'� �q�(PSRR)]&r34�/�IFA�U� ee�$�LDO]s�H7�%&'

��

5.0V� *+16�����135mW"#�

�;���PSRR(85dB!") FA�U� ee tuA�/vUAvwxQyz#G�

$(���%W�A?{|��m�a 2.2V}5.5V~� &r3���&'(�+xQy(THD+N))0.01%*+

8�����/�����T��

,-��z#G� NCP2809B�$.iUDFN�AV��(3mm x 3mm)�#� /�U���AV����

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KL�0 u��>���� MP3���

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Micro10DM SUFFIXCASE 846B

1

10

PIN CONNECTIONS

IN_R OUT_RSD

BYP

REF_I

VM

VP

1 10

2

3

4

9

8

7

MARKINGDIAGRAM

IN_L 5 OUT_L6

MAxAYW�

OUT_I

See detailed ordering and shipping information in the packagedimensions section on page 22 of this data sheet.

ORDERING INFORMATION

x = E for NCP2809A C for NCP2809BA = Assembly LocationL = Wafer LotY = YearW = Work Week� = Pb−Free Package

http://onsemi.com

(Note: Microdot may be in either location)

10 PIN DFNMU SUFFIX

CASE 506AT

(Top View)Micro10

2809BALYW�

IN_R OUT_RSD

BYP

REF_I

VM

VP

1 10

2

3

4

9

8

7

IN_L 5 OUT_L6

OUT_I

(Top View)UDFN10

Page 2: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com2

Figure 1. NCP2809A Typical Application Schematic without Output Coupling Capacitor(NOCAP Configuration)

��

��

��

OUT_L

OUT_I

REF_I

OUT_R

20 k�

20 k�

BYPASS

1 �F CS

VP

VP

SHUTDOWNCONTROL

20 k�

20 k�

VM

1 �FCbypass

VP

VMCBRIDGE

BYPASS

SHUTDOWN

IN_R

IN_L

390 nF

CI

390 nF

CI

VIH

VIL

AUDIOINPUT

AUDIOINPUT

Figure 2. NCP2809A Typical Application Schematic with Output Coupling Capacitor

��

��

��

OUT_L

OUT_I

REF_I

OUT_R

BYPASS

1 �F CS

VP

VP

SHUTDOWNCONTROL

20 k�

20 k�

VM

1 �F

VP

VMCBRIDGE

BYPASS

SHUTDOWN

IN_R

IN_L

390 nF

CI

390 nF

CI

VIH

VIL

AUDIOINPUT

AUDIOINPUT

LEFT

RIGHT

SLEEVE

HEADPHONE JACK

LEFT

RIGHT

SLEEVE

HEADPHONE JACK

20 k�

20 k�

NC

NC

220 �F

Cout

220 �F

Cout

+

+

TIP(LEFT)

RING(RIGHT)

SLEEVE

Figure 3. Typical 3−Wire Headphone Plug

Page 3: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com3

Figure 4. NCP2809B Typical Application Schematic without Output Coupling Capacitor(NOCAP Configuration)

��

��

��

OUT_L

OUT_I

REF_I

OUT_R

BYPASS

1 �F CS

VP

VP

SHUTDOWNCONTROLVM

1 �FCbypass

VP

VMCBRIDGE

BYPASS

SHUTDOWN

IN_R

IN_L

390 nF

CI

390 nF

CI

VIH

VIL

AUDIOINPUT

AUDIOINPUT

Figure 5. NCP2809B Typical Application Schematic with Output Coupling Capacitor

��

��

��

OUT_L

OUT_I

REF_I

OUT_R

BYPASS

1 �F CS

VP

VP

SHUTDOWNCONTROL

VM

1 �F

VP

VMCBRIDGE

BYPASS

SHUTDOWN

IN_R

IN_L

390 nF

CI

390 nF

CI

VIH

VIL

LEFT

RIGHT

SLEEVE

HEADPHONE JACK

LEFT

RIGHT

SLEEVE

HEADPHONE JACK

NC

NC

220 �F

Cout

220 �F

Cout

+

+

20 k�

20 k�

20 k�

20 k�

20 k�

20 k�

Cbypass

20 k�

20 k�

AUDIOINPUT

AUDIOINPUT

Page 4: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com4

PIN FUNCTION DESCRIPTION

Pin Type Symbol Description

1 I IN_R Negative input of the second amplifier. It receives the audio input signal. Connected to the inputcapicator Cin (NCP2809A) or the external Rin (NCP2809B).

2 I SHUTDOWN The device enters in shutdown mode when a a low level is applied on this pin.

3 I BYPASS Bypass capacitor pin which provides the common mode voltage (VP/2).

4 O REF_I Virtual ground amplifier feed back. This pin sets the stereo headset ground. In order to improvecrosstalk, this pin must be connected as close as possible to the ground connection of the headset(ideally at the ground pin of the headset connector). When one uses bypassing capacitors, this pinmust be left unconnected.

5 I IN_L Negative input of the first amplifier. It receives the audio input signal. Connected to the inputcapacitor Cin (NCP2809A) or the external Rin (NCP2809B).

6 O OUT_L Stereo headset amplifier analog output left. This pin will output the amplified analog signal and,depending on the application, must be coupled with a capacitor or directly connected to the leftloudspeaker of the headset. This output is able to drive a 16 � load in a single−ended configuration.

7 I VP Positive analog supply of the cell. Range: 2.2 V − 5.5 V

8 O OUT_I Virtual ground for stereo Headset common connection. This pin is directly connected to thecommon connection of the headset when use of bypassing capacitor is not required. When oneuses bypassing capacitors, this pin must be left unconnected.

9 I VM Analog Ground

10 O OUT_R Stereo headset amplifier analog output right. This pin will output the amplified analog signal and,depending on the application, must be coupled with a capacitor or directly connected to the rightloudspeaker of the headset. This output is able to drive a 16 � load in a single−ended configuration.

MAXIMUM RATINGS (TA = +25C)

Rating Symbol Value Unit

Supply Voltage Vp 6.0 V

Operating Supply Voltage Op Vp 2.2 to 5.5 V

Input Voltage Vin −0.3 to VCC + 0.3 V

Max Output Current Iout 250 mA

Power Dissipation Pd Internally Limited −

Operating Ambient Temperature TA −40 to +85 C

Max Junction Temperature TJ 150 C

Storage Temperature Range Tstg −65 to +150 C

Thermal Resistance, Junction−to−Air Micro10UDFN

R�JA 200240

C/W

ESD Protection Human Body Model (HBM) (Note 1)Machine Model (MM) (Note 2)

− 8000200

V

Latch up current at Ta = 85�C (Note 3) 100 mA

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above theRecommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affectdevice reliability.1. Human Body Model, 100 pF discharged through a 1.5 k� resistor following specification JESD22/A114 8.0 kV can be applied on OUT_L,

OUT_R, REF_I and OUT_I outputs. For other pins, 2.0 kV is the specified voltage.2. Machine Model, 200 pF discharged through all pins following specification JESD22/A115.3. Maximum ratings per JEDEC standard JESD78.*This device contains 752 active transistors and 1740 MOS gates.

Page 5: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com5

ELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application).The following parameters are given for the NCP2809A and NCP2809B mounted externally with 0 dB gain, unless otherwise noted.(For typical values TA = 25C, for min and max values TA = −40C to 85C, TJmax = 125C, unless otherwise noted.)

Characteristic Symbol ConditionsMin

(Note 4) TypMax

(Note 4) Unit

Supply Quiescent Current IDD Vin = 0 V, RL = 16 �Vp = 2.4 VVp = 5.0 V

1.541.84

2.83.6

mA

Output Offset Voltage Voff Vp = 2.4 VVp = 5.0 V

−25 1.0 +25 mV

Shutdown Current ISD Vp = 5.0 V 10 600 nA

Shutdown Voltage High (Note 5) VSDIH − 1.2 V

Shutdown Voltage Low VSDIL − 0.4 V

Turning On Time (Note 6) TWU Cby = 1.0 �F 285 ms

Turning Off Time (Note 6) TSD Cby = 1.0 �F 50 ms

Max Output Swing Vloadpeak Vp = 2.4 V, RL = 16 �Vp = 5.0 V, RL = 16 �

Vp = 2.4 V, RL = 32 �Vp = 5.0 V, RL = 32 �

0.821.94

0.92.05

1.042.26

V

Max Rms Output Power POrms Vp = 2.4 V, RL = 16 �, THD+N<0.1%Vp = 5.0 V, RL = 16 �, THD+N<0.1%

Vp = 2.4 V, RL = 32 �, THD+N<0.1%Vp = 5.0 V, RL = 32 �, THD+N<0.1%

24131

1780

mW

Voltage Gain G NCP2809A only −0.5 0 +0.5 dB

Input Impedance Zin NCP2809A only 20 k�

Crosstalk CS f = 1.0 kHzVp = 2.4 V, RL = 16 �, Pout = 20 mWVp = 2.4 V, RL = 32 �, Pout = 10 mW

Vp = 3.0 V, RL = 16 �, Pout = 30 mWVp = 3.0 V, RL = 32 �, Pout = 20 mW

Vp = 5.0 V, RL = 16 �, Pout = 75 mWVp = 5.0 V, RL = 32 �, Pout = 50 mW

−63.5−72.5

−64−73

−64−73

dB

Signal to Noise Ratio SNR f = 1.0 kHzVp = 2.4 V, RL = 16 �, Pout = 20 mWVp = 2.4 V, RL = 32 �, Pout = 10 mW

Vp = 3.0 V, RL = 16 �, Pout = 30 mWVp = 3.0 V, RL = 32 �, Pout = 20 mW

Vp = 5.0 V, RL = 16 �, Pout = 75 mWVp = 5.0 V, RL = 32 �, Pout = 50 mW

88.389

90.592

95.196.1

dB

4. Min/Max limits are guaranteed by production test.5. At TA = −40C, the minimum value is set to 1.5 V.6. See page 10 for a theoretical approach to these parameters.

Page 6: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com6

ELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application).The following parameters are given for the NCP2809A and NCP2809B mounted externally with 0 dB gain, unless otherwise noted.(For typical values TA = 25C, for min and max values TA = −40C to 85C, TJmax = 125C, unless otherwise noted.)

Characteristic Symbol ConditionsMin

(Note 7) TypMax

(Note 7) Unit

Positive Supply Rejection Ratio PSRR V+ RL = 16 �Vpripple_pp = 200 mV

Cby = 1.0 �FInput Terminated with 10 �

NCP2809AF = 217 HzVp = 5.0 VVp = 2.4 V

F = 1.0 kHzVp = 5.0 VVp = 2.4 V

−73−82

−73−85

dB

Positive Supply Rejection Ratio PSRR V+ RL = 16 �Vpripple_pp = 200 mV

Cby = 1.0 �FInput Terminated with 10 �

NCP2809Bwith 0 dB External Gain

F = 217 HzVp = 5.0 VVp = 2.4 V

F = 1.0 kHzVp = 5.0 VVp = 2.4 V

−80−82

−81−81

dB

Efficiency � VP = 5.0 V, RL = 16 � = 135 mW 63 %

Thermal Shutdown Temperature(Note 8)

Tsd − 160 C

Total Harmonic Distortion + Noise(Note 9)

THD+N VP = 2.4 V, f = 1.0 kHzRL = 16 �, Pout = 20 mWRL = 32 �, Pout = 15 mW

VP = 5.0 V, f = 1.0 kHzRL = 16 �, Pout = 120 mWRL = 32 �, Pout = 70 mW

0.0060.004

0.0050.003

%

7. Min/Max limits are guaranteed by production test.8. This thermal shutdown is made with an hysteresis function. Typically, the device turns off at 160C and turns on again when the junction

temperature is less than 140C.9. The outputs of the device are sensitive to a coupling capacitor to Ground. To ensure THD+N at very low level for any sort of headset

(16 � or 32 ��, outputs (OUT_R, OUT_L, OUT_I and REF_I) must not be grounded with more than 500 pF.

Page 7: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com7

TYPICAL CHARACTERISTICS

0.001

0.01

0.1

1

10

10 100 1000 10000 100000FREQUENCY (Hz)

TH

D+N

(%

)

0.001

0.01

0.1

1

10

10 100 1000 10000 100000FREQUENCY (Hz)

TH

D+N

(%

)

0.001

0.01

0.1

1

10

10 100 1000 10000 100000FREQUENCY (Hz)

TH

D+N

(%

)

0.001

0.01

0.1

1

10

10 100 1000 10000 100000FREQUENCY (Hz)

TH

D+N

(%

)

0.001

0.01

0.1

1

10

10 100 1000 10000 100000FREQUENCY (Hz)

TH

D+N

(%

)

Figure 6. THD+N vs. FrequencyVp = 5.0 V, RL = 16 �, Pout = 75 mW

0.001

0.01

0.1

1

10

10 100 1000 10000 100000FREQUENCY (Hz)

TH

D+N

(%

)

Figure 7. THD+N vs. FrequencyVp = 5.0 V, RL = 32 �, Pout = 50 mW

Figure 8. THD+N vs. FrequencyVp = 3.0 V, RL = 16 �, Pout = 30 mW

Figure 9. THD+N vs. FrequencyVp = 3.0 V, RL = 32 �, Pout = 20 mW

Figure 10. THD+N vs. FrequencyVp = 2.4 V, RL = 16 �, Pout = 20 mW

Figure 11. THD+N vs. FrequencyVp = 2.4 V, RL = 32 �, Pout = 10 mW

Page 8: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com8

TYPICAL CHARACTERISTICS

0.001

0.01

0.1

1

10

TH

D+N

(%

)

OUTPUT POWER (mW)

10 30 40 500 200.001

0.01

0.1

1

10

TH

D+N

(%

)

OUTPUT POWER (mW)

10 20 30 350 5 15 25

0.001

0.01

0.1

1

10T

HD

+N (

%)

OUTPUT POWER (mW)

0.001

0.01

0.1

1

10

0 20 40 60 80 100 120 140 160

Figure 12. THD+N vs. Power OutVp = 5.0 V, RL = 16 �, 1.0 kHz

Figure 13. THD+N vs. Power OutVp = 5.0 V, RL = 32 �, 1.0 kHz

0 10 20 30 40 50 60 70 80 90

Figure 14. THD+N vs. Power OutVp = 3.3 V, RL = 16 �, 1.0 kHz

Figure 15. THD+N vs. Power OutVp = 3.3 V, RL = 32 �, 1.0 kHz

10 20 30 40

Figure 16. THD+N vs. Power OutVp = 3.0 V, RL = 16 �, 1.0 kHz

Figure 17. THD+N vs. Power OutVp = 3.0 V, RL = 32 �, 1.0 kHz

TH

D+N

(%

)

OUTPUT POWER (mW)

0.001

0.01

0.1

1

10

0

TH

D+N

(%

)

OUTPUT POWER (mW)

0.001

0.01

0.1

1

10

TH

D+N

(%

)

OUTPUT POWER (mW)

010 30 40 500 20 60

Page 9: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com9

TYPICAL CHARACTERISTICSC

RO

SS

TALK

(dB

)

FREQUENCY (Hz)

−80

−70

−60

−50

−40

10 100 1000 10000 100000

CR

OS

STA

LK (

dB)

FREQUENCY (Hz)

0.001

0.01

0.1

1

10

TH

D+N

(%

)

OUTPUT POWER (mW)

0 5 10 15 200.001

0.01

0.1

1

10

TH

D+N

(%

)

OUTPUT POWER (mW)

0 5 10 15 20 25 30

−80

−70

−60

−50

−40

10 100 1000 10000 100000

CR

OS

STA

LK (

dB)

FREQUENCY (Hz)

−80

−70

−60

−50

−40

10 100 1000 10000 100000

CR

OS

STA

LK (

dB)

FREQUENCY (Hz)

−80

−70

−60

−50

−40

10 100 1000 10000 100000

Figure 18. THD+N vs. Power OutVp = 2.4 V, RL = 16 �, 1.0 kHz

Figure 19. THD+N vs. Power OutVp = 2.4 V, RL = 3.2 �, 1.0 kHz

Figure 20. Crosstalk Vp = 5.0 V, RL = 16 �, Pout = 75 mW

Figure 21. Crosstalk Vp = 5.0 V, RL = 32 �, Pout = 50 mW

Figure 22. Crosstalk Vp = 3.0 V, RL = 16 �, Pout = 30 mW

Figure 23. Crosstalk Vp = 3.0 V, RL = 32 �, Pout = 20 mW

Page 10: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com10

TYPICAL CHARACTERISTICS

−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

PS

RR

(dB

)

FREQUENCY (Hz)

10 100 1000 10000 100000−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

PS

RR

(dB

)

FREQUENCY (Hz)

10 100 1000 10000 100000

−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

PS

RR

(dB

)

FREQUENCY (Hz)

10 100 1000 10000 100000

Figure 24. Crosstalk Vp = 2.4 V, RL = 16 �, Pout = 20 mW

Figure 25. Crosstalk Vp = 2.4 V, RL = 32 �, Pout = 10 mW

−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

Figure 26. PSRR − Input Grounded with 10 �Vp = 2.4 V, Vripple = 200 mV pk−pk, RL =16 �

CR

OS

STA

LK (

dB)

FREQUENCY (Hz)

−80

−70

−60

−50

−40

10 100 1000 10000 100000

CR

OS

STA

LK (

dB)

FREQUENCY (Hz)

−80

−70

−60

−50

−40

10 100 1000 10000 100000

PS

RR

(dB

)

FREQUENCY (Hz)

10 100 1000 10000 100000

Figure 27. PSRR − Input Grounded with 10 �Vp = 2.4 V, Vripple = 200 mV pk−pk, RL = 32 �

Figure 28. PSRR − Input Grounded with 10 �Vp = 3.0 V, Vripple = 200 mV pk−pk, RL =16 �

Figure 29. PSRR − Input Grounded with 10 �Vp =3.0 V, Vripple = 200 mV pk−pk, RL = 32 �

NCP2809A

NCP2809A

NCP2809A

NCP2809A

Page 11: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com11

TYPICAL CHARACTERISTICS

−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

PS

RR

(dB

)

FREQUENCY (Hz)

10 100 1000 10000 100000−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10P

SR

R (

dB)

FREQUENCY (Hz)

10 100 1000 10000 100000

−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

PS

RR

(dB

)

FREQUENCY (Hz)

10 100 1000 10000 100000−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

PS

RR

(dB

)

FREQUENCY (Hz)

10 100 1000 10000 100000

Figure 30. PSRR − Input Grounded with 10 �Vp = 3.3 V, Vripple = 200 mV pk−pk, RL =16 �

Figure 31. PSRR − Input Grounded with 10 �Vp = 3.3 V, Vripple = 200 mV pk−pk, RL = 32 �

Figure 32. PSRR − Input Grounded with 10 �Vp = 5.0 V, Vripple = 200 mV pk−pk, RL =16 �

Figure 33. PSRR − Input Grounded with 10 �Vp = 5.0 V, Vripple = 200 mV pk−pk, RL = 32 �

NCP2809A

NCP2809A

NCP2809A

NCP2809A

Page 12: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com12

TYPICAL CHARACTERISTICS

−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

PS

RR

(dB

)

FREQUENCY (Hz)

10 100 1000 10000 100000−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10P

SR

R (

dB)

FREQUENCY (Hz)

10 100 1000 10000 100000

−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

PS

RR

(dB

)

FREQUENCY (Hz)

10 100 1000 10000 100000−110

−100

−90

−80

−70

−60

−50

−40

−30

−20

−10

PS

RR

(dB

)

FREQUENCY (Hz)

10 100 1000 10000 100000

Figure 34. PSRR − Input Grounded with 10 �Vp = 2.4 V, Vripple = 200 mV pk−pk, RL =16 �,

G = 1 (0 dB)

Figure 35. PSRR − Input Grounded with 10 �Vp = 5.0 V, Vripple = 200 mV pk−pk, RL = 16 �,

G = 1 (0 dB)

Figure 36. PSRR − Input Grounded with 10 �Vp = 2.4 V, Vripple = 200 mV pk−pk, RL =16 �,

G = 1 (0 dB) and G = 4 (12 dB)

Figure 37. PSRR − Input Grounded with 10 �Vp = 5.0 V, Vripple = 200 mV pk−pk, RL = 16 �,

G = 1 (0 dB) and G = 4 (12 dB)

NCP2809B NCP2809B

G = 4

G = 1

G = 4

G = 1

NCP2809B NCP2809B

Page 13: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com13

TYPICAL CHARACTERISTICS

Figure 38. Turning�n Time/Vp = 5.0 V and F = 100 Hz

Ch1 = OUT_R, Ch2 = VMC and Ch3 = Shutdown

Figure 39. Turning�n Time Zoom/Vp = 5.0 Vand F = 400 Hz

Ch1 = OUT_R, Ch2 = VMC and Ch3 = Shutdown

Figure 40. Turning�ff Time/Vp = 5.0 Vand F = 100 Hz

Ch1 = OUT_R, Ch2 = VMC and Ch3 = Shutdown

Figure 41. TurningOff Time Zoom/Vp = 5.0 Vand F = 400 Hz

Ch1 = OUT_R, Ch2 = VMC and Ch3 = Shutdown

Page 14: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com14

����������

�� !"NCP2809� �����������2.6V}

5.0V�� �~��%&'-!�!��24mWrms(16����VP = 2.4V)�131mWrms (16����VP = 5.0V)�&'

NCP2809��1�723��2g���O��������*+2�234�%&'NCP2809A�O�PQ��0dBST��NCP2809B"R��48�*+PQ�"�T�$%&'

#$ ������\�����Pmos?@����50�Nmos?@������vUA��`7��4T-!�!"#�&/01���234�%&'Nmos?@����50�Pmos?@����������� (Ron)���%5~��3.0����&'O���������23��3g��6iPQ�7*+2�234�%&'L��50�DCPQ�"Nh�&/�I�N�Hd8�PQ�7�?@��B�{v����PQ�7�&'

%����&'(%���)*+����/�����?@��������9���Figure 38}����:����4�%&';<��tuA�/vUAvwxQy"��&/�I�������-!�!���H(�"=D*���&/6�]��%&'W�A?{|����� �Av�¡Q]¢£23/H�FQ���)]¤¥�����¦I�-!DC§�]Bm��m�a�)9>�7/H�PQ�]=D*����%&(50 ms)'\�01� FQ�"����&/o?��tuA�/vUAvwxQy"(@2¨/1©�N��&'

25ª�������8�AB«��C�¬�­+3%&'

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Toff = R * Cby * Ln(Vp/1.4)

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�������N®]160ª"�G/HO����]��7�ON®]140ª"�G/%����º�%¨¶'

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POUT �VO2

2RL

Page 15: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com15

FQ�����!�C�01�7�%&'

PD � PTOT � POUT

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NCP2809A��0dB�Z����PQ�H�NCP2809B"R���8�PQ��T"[Æ�$%&' FQ�50�W��¸�Ç�"N�È&/���NCP2809"(PQ�2��R�&/6�]��%&'\�\��NCP2809��THD+N«]NJ�²³�xQy�]Nh�7/H����L��"·M¨=����"R��$%&'

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fc � 12 * � * Rin * Cin

(eq. 1)

(¼'¥�jA�U�`"H�&/H����h$7@^"p�+27�01��B� �C�Ì_"ÍÎh$k&/6�]��%&'�Ï��hÌ_�¯!jA�U�`�B� �C"R�&/Z[��FGDC�)(VP/2)�H&/%���8]**��������uA��xQypЩ/\H]��%&'Ñk���UV�WX����¯!B� �C�«"0.10 F�&/H`Ò7Ç�]­+3%& (Rin =20k��Z[)'

Page 16: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com16

I; ��F�G�H)>?(Cbypass)FQ���B� �CCby�0��¡��C�@Q�����U�`(� �)�ÓÎ�§���������)].#23�\�B� �C�NCP2809������8]a%�%&'�Ô7� FQ����xQy"@+��� �q�"�I/1©�b��&'2+��������uA��xQy"NJ�&/�I�FQ���B� �C�b�7�,�&'1.0�F�FQ���B� �C"R�&/H�vUAv�xQy50�uA��xQy"KL2¨=��!"(�2¨/;<"�c�$/�=�&'Ì_]0.1�F�p����~��%&]�tuA� /vUAvwxQy]KL�D&k7�%&'��]¾4�N�7Ç�"H�&/�I�O 1.0�F�c@ÅAv�FQ���B� �C"ÕÖ�%&'

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12 � �� Rin � Cin

� 12 � �� RL � Cout

(eq. 2)

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(eq. 3)

Cout 1

2 � �� RL � f−3dB(eq. 4)

RL = 16��f−3dB = 30Hz�Z[�¬(4)*+Cout 330�F�&'

Cout = 220�F�Z[�0.5dB�@^¼'¥�225Hz����−3.0dBjA?�¼'¥�45Hz�&'\3�å1H�¯!jA�U�`�B� �C�[Æ�pæ�&'¬(2)"R�&/H�¯!jA�U�`�B� �C�Ì_��220�F�-!jA�U�`�B� �C�Z[�68nF�330�F�-!jA�U�`�B� �C�Z[�100nF�&'\�2��NCP2809"R�&/Z[�REF_I��50�OUT_I����çpe�4�7�%¨¶(Figure 43"èq)'

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Page 17: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com17

Figure 42. Typical Application Schematic Without Output Coupling Capacitor

��

��

��

16 �

16 �

OUT_L

REF_I

OUT_R

20 k�

20 k�

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1 �F CS

VP

VP

+

+

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20 k�

20 k�

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VP

VMCBRIDGE

BYPASS

SHUTDOWN

IN_R

IN_L

390 nF

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390 nF

CI

VIH

VIL

AUDIOINPUT

AUDIOINPUT

OUT_I

Figure 43. Typical Application Schematic With Output Coupling Capacitor

��

��

��

16 �

16 �

OUT_L

REF_I

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20 k�

20 k�

BYPASS

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20 k�

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Cbypass 1 �F

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390 nF

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390 nF

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VIH

VIL

AUDIOINPUT

AUDIOINPUT

NC

NC

220 �F

Cout

220 �F

Cout

+

+

OUT_I

Page 18: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com18

DEMONSTRATION BOARD AND LAYOUT GUIDELINES

��

��

��

16 �

16 �

OUT_R

REF_I

OUT_L

20 k�

20 k�

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1 �F C1

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VP+

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20 k�

20 k�

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1 �F

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SHUTDOWN

IN_L

IN_R

390 nF

C2

390 nF

C4

J3 & U2

10

8

4

6

U1

123

132

132

7VM1

VM1 VM1

1

3

5

2

J2

J4VP

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C3

VM1

VM1

9

VP

100 kR1

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��

16 �

16 �

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20 k�

20 k�

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390 nF

C6

390 nF

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10

8

4

6

U3

123

132

132

7VM2

VM2 VM2

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3

5

2

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J10VP

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VM2

VM2

9

VP

100 kR2

J7

VM2VM2

220 �F

220 �F

C9

C10

NC

NC

+

+

Figure 44. Schematic of the Demonstration Board for Micro10 Device

OUT_I

OUT_I

Demonstration Board for Micro10 Devices

Page 19: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com19

BOTTOM LAYER

TOP LAYER

Figure 45. Demonstration Board for Micro10 Device − PCB Layers

Page 20: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com20

OUT_R

REF_I

OUT_L

20 k�

20 k�

BYPASS

C71 �F

J5

VP

20 k�

20 k�

VP

BYPASS

SHUTDOWN

IN_L

IN_R

VP

Figure 46. Schematic of the Demonstration Board for UDFN10 Device

OUT_I

Demonstration Board for UDFN10 Device

C51 �F

VP

1 �F

C1

1 �F

C2

R1

R3

U3

R4

R2

J1

J2

J8

J9

J7

J4

J3

R520 k�

C3 100 �F

C3 100 �F

J15

J14

J24

J25

J22

U1

OFF

ON

Page 21: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com21

Table 1. Bill of Material − Micro10

Item Part Description Ref.PCB

Footprint ManufacturerManufacturer

Reference

1 NCP2809 Audio Amplifier U1,U3 Micro10 ON Semiconductor NCP2809

2 SMD Resistor 100 K� R1,R2 0805 Vishay−Draloric D12CRCW Series

3 Ceramic Capacitor 390 nF 50 V Z5U C2,C4,C6,C8

1812 Kemet C1812C394M5UAC

4 Ceramic Capacitor 1.0 �F 16 V X7ROptimized Performance

C1,C3,C5,C7

1206 Murata GRM42−6X7R105K16

5 Tantalum Capacitor 220 �F 10 V C9,C10 − Kemet T495X227010AS

6 I/O Connector. It can be plugged byBLZ5.08/2 (Weidmuler Reference)

J4,J10 − Weidmuler SL5.08/2/90B

7 I/O Connector. It can be plugged byBLZ5.08/3 (Weidmuler Reference)

J2,J3,J8,J9

− Weidmuler SL5.08/3/90B

8 3.5 mm PCB Jack Connector U2,U4 − Decelect−Forgos IES 101−3

9 Jumper Header Vertical Mount2*1, 2.54 mm

J1,J7 − − −

Table 2. Bill of Material − UDFN10

Item Part Description Ref. PCB Footprint Manufacturer Manufacturer Part Number

1 Stereo Headphone Amplifier U1 UDFN10 3x3 ON Semiconductor NCP2809B

2 Thick Film Chip Resistor R1−R5 0805 Vishay CRCW08052022FNEA

3 Ceramic Chip Capacitor C1,C2,C5,C7 0805 TDK C2012X7R1C105K

4 PCB Header, 2 Poles J5 NA Phoenix MSTBA 2,5/2−G

5 SMB Connector J1,J2,J8 NA RS RS 546−3406

6 3.5 mm PCB Jack Connector U2 NA CUI Inc SJ−3515N

7 Short Connector J14,J15 NA NA NA

8 Short Connector J24,J25 NA NA NA

^_�;�/-)`;a;�

VMC)bcMXYdTUefNOCAP���� �������/

NCP2809�õ7�ö��^_`@�a"R�&/\H� FQ��-!�bAa�÷�" ee�$�DC> Av-!B� �C]s��7/\H�&'v �?�v�xQy�50�� �%���4N`�Ç�"­/�I��^_`@�ao¬�������ø�e]O��Z�4�%¨¶'\�Ç�k!"+�&�I�OOUT_I50�REF_I"�-!��Av�B�v��d���$/Ï:>k�e&/6�]��%&'\�e�N�7Zù��\�d���/�Aa����&'

THD+Ng1MXYdTUefbAacA?����j�N`�THD+N§�"­/���� �`@�a�OUT_R�OUT_L�5

0�OUT_I�¿?�����"NJ�&/6�]��%&'\��I�\3+�G���e?�����$/M��"úk�4�2"Ik�4kÏ2�'`@�a����"Ë�&/\H�50� ����?��H�E `�?��"û�����uv&/\H��:/6�]��%&'\������O�23]üí��`@�aH¿-! (OUT_R�OUT_L�50�OUT_I)�8��/jA�U�`�B� �C�Ød"ý:/\H]��%&' 2»�`@�aþ�8�-!?��"uv&/\H"�:4kÏ2�'ÿ1�4p�¥�þ�8�?��"��2¨/6�]�/Z[��90®��®�uv�4kÏ2�'

Page 22: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

NCP2809 Series

http://onsemi.com22

ORDERING INFORMATION

Device Marking Package Shipping†

NCP2809ADMR2 MAE Micro10 4000/Tape & Reel

NCP2809ADMR2G MAE Micro10(Pb−Free)

4000/Tape & Reel

NCP2809BDMR2 MAC Micro10 4000/Tape & Reel

NCP2809BDMR2G MAC Micro10(Pb−Free)

4000/Tape & Reel

NCP2809BMUTXG 2809B UDFN10(Pb−Free)

3000/Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.

NOCAP is a trademark of Semiconductor Components Industries, LLC (SCILLC).

Page 23: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

UDFN10 3x3, 0.5PCASE 506AT−01

ISSUE ADATE 29 JUN 2007

ÍÍÍÍÍÍÍÍÍÍÍÍ

NOTES:1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.2. CONTROLLING DIMENSION: MILLIMETERS.3. DIMENSION b APPLIES TO PLATED

TERMINAL AND IS MEASURED BETWEEN0.25 AND 0.30mm FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSEDPAD AS WELL AS THE TERMINALS.

C

A

SEATINGPLANE

D B

E

0.15 C

A3

A

A1

2X

2X 0.15 C

SCALE 2:1

DIMA

MIN NOM MAXMILLIMETERS

0.45 0.50 0.55A1 0.00 0.03 0.05A3 0.127 REFb 0.18 0.25 0.30D 3.00 BSCD2 2.40 2.50 2.60E 3.00 BSC

1.70 1.80 1.90E2e 0.50 BSC

0.19 TYPK

PIN ONEREFERENCE

0.08 C

0.10 C

10X

A0.10 C

NOTE 3

L e

D2

E2

b

B

5

610X

1

K 10

10X

10X

0.05 C

8X

0.30 0.40 0.50L

*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

2.1746

2.6016

1.8508

0.5000 PITCH

0.565110X

3.3048

0.300810X

DIMENSIONS: MILLIMETERS

A = Assembly LocationL = Wafer LotY = YearW = Work Week� = Pb−Free Package(Note: Microdot may be in either location)

*This information is generic. Please refer todevice data sheet for actual part marking.Pb−Free indicator, “G” or microdot “ �”,may or may not be present.

GENERICMARKING DIAGRAM*

XXXXXXXXXXALYW�

TOP VIEW

SIDE VIEW

BOTTOM VIEW

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others.

98AON21330DDOCUMENT NUMBER:

DESCRIPTION:

Electronic versions are uncontrolled except when accessed directly from the Document Repository.Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 1UDFN10 3X3, 0.5P

© Semiconductor Components Industries, LLC, 2019 www.onsemi.com

Page 24: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

SCALE 2:1

SBM0.08 (0.003) A STDIM MIN MAX MIN MAX

INCHESMILLIMETERS

A 2.90 3.10 0.114 0.122

B 2.90 3.10 0.114 0.122

C 0.95 1.10 0.037 0.043

D 0.20 0.30 0.008 0.012

G 0.50 BSC 0.020 BSC

H 0.05 0.15 0.002 0.006

J 0.10 0.21 0.004 0.008

K 4.75 5.05 0.187 0.199

L 0.40 0.70 0.016 0.028

NOTES:1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION “A” DOES NOT INCLUDE MOLD

FLASH, PROTRUSIONS OR GATE BURRS.MOLD FLASH, PROTRUSIONS OR GATEBURRS SHALL NOT EXCEED 0.15 (0.006)PER SIDE.

4. DIMENSION “B” DOES NOT INCLUDEINTERLEAD FLASH OR PROTRUSION.INTERLEAD FLASH OR PROTRUSIONSHALL NOT EXCEED 0.25 (0.010) PER SIDE.

5. 846B−01 OBSOLETE. NEW STANDARD846B−02

−B−

−A−

D

K

GPIN 1 ID 8 PL

0.038 (0.0015)

−T− SEATING

PLANE

C

H JL

xxxxAYW

xxxx = Device CodeA = Assembly LocationY = YearW = Work Week� = Pb−Free Package

GENERICMARKING DIAGRAM*

� mminches

�SCALE 8:1

Micro10

10X 10X

8X

1.040.041

0.320.0126

5.280.208

4.240.167

3.200.126

0.500.0196

Micro10CASE 846B−03

ISSUE DDATE 07 DEC 2004

SOLDERING FOOTPRINT

*This information is generic. Please refer todevice data sheet for actual part marking.Pb−Free indicator, “G” or microdot “ �”,may or may not be present.

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

http://onsemi.com1

Semiconductor Components Industries, LLC, 2002

October, 2002 − Rev. 0Case Outline Number:

XXX

DOCUMENT NUMBER:

STATUS:

NEW STANDARD:

DESCRIPTION:

98AON03799D

ON SEMICONDUCTOR STANDARD

Micro10

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

PAGE 1 OF 2

Page 25: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

DOCUMENT NUMBER:98AON03799D

PAGE 2 OF 2

ISSUE REVISION DATE

O RELEASED FOR PRODUCTION. REQ BY J. HOSKINS. 09 NOV 2000

A DIM “D” WAS 0.25−0.4MM/0.10−0.016IN. ADDED NOTE 5.USED ON: WAS 10 LEAD TSSOP, PITCH 0.65 REQ BY J. HOSKINS.

13 NOV 2000

B CHANGED “USED ON” WAS: 10 LEAD TSSOP, PITCH 0.50MM. REQ BY A. HAMID. 11 JUL 2001

C CHANGED “D” DIMENSION MAX FROM 0.35 TO 0.30MM AND 0.014 TO 0.012IN.REQ BY D. TRUHITTE.

31 JUL 2003

D ADDED FOOTPRINT INFORMATION. REQ. BY K. OPPEN. 07 DEC 2004

Semiconductor Components Industries, LLC, 2004

December, 2004 − Rev. 03DCase Outline Number:

846B

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further noticeto any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume anyliability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidentaldamages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary overtime. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license underits patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or deathmay occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees,subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim ofpersonal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

Page 26: ON SemiconductorELECTRICAL CHARACTERISTICS All the parameters are given in the capless configuration (typical application). The following parameters are given for the NCP2809A and

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

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