npn power transistor with integrated diode

PHD13003CNPN power transistor with integrated diodeRev.02 - 29 May 2018 Product data sheet

1. General descriptionHigh voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 (TO-92) plastic package.

2. Features and benefits• High typical DC current gain• Fast switching• High voltage capability• Integrated anti-parallel E-C diode

3. Applications• Compact fluorescent lamps (CFL)• Low power electronic lighting ballasts• Off-line self-oscillating power supplies (SOPS) for battery charging

4. Quick reference dataTable 1. Quick reference data Symbol Parameter Conditions Values UnitAbsolute maximum ratingVCESM collector-emitter peak

voltage VBE = 0 V 700 V

IC collector current DC 1.5 A

Ptot total power dissipation Tlead ≤ 25 °C; Fig. 1 2.1 W

Symbol Parameter Conditions Min Typ Max UnitStatic characteristics

hFE DC current gain IC = 0.5 A; VCE = 2 V; Tj = 25 °C 8 17 25

WeEn Semiconductors PHD13003CNPN power transistor with integrated diode

PHD13003C

Product data sheetAll information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved

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5. Pinning information

6. Ordering information

Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 B base

123TO-92 (SOT54)

2 C collector 3

E

emitter

Type number Package Name Description Version

PHD13003C TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54

Table 3. Ordering information


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7. Limiting valuesTable 4. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Values Unit VCESM collector-emitter peak

voltage VBE = 0 V 700 V

VCBO collector-base voltage IE = 0 A 700 V

VCEO collector-emitter voltage IB = 0 A 400 V

IC collector current DC 1.5 A

ICM peak collector current 3 A

IB base current DC 0.75 A

IBM peak base current 1.5 A

Ptot total power dissipation Tlead ≤ 25 °C; Fig. 1 2.1 W

Tstg storage temperature -65 to 150 °C

Tj junction temperature 150 °C

VEBO emitter-base voltage IC = 0 A; I(Emitter) = 10 mA 9 V


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Pder(%) = Ptot

Ptot(25°C) ×100%

Fig. 1. Normalized total power dissipation as a function of lead temperature


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8. Thermal characteristicsTable 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-lead) thermal resistance

from junction to lead

Fig. 2 - - 60 K/W

Rth(j-a) thermal resistance from junction to ambient

in free air; printed-circuit board mounted; lead length = 4 mm

- 150 - K/W

Fig. 2. Transient thermal impedance from junction to lead as a function of pulse width


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9. CharacteristicsTable 6. Characteristics Symbol Parameter Conditions Min Typ Max UnitStatic characteristics ICES collector-emitter cut-off

currentVBE = 0 V; VCE = 700 V - - 1 mA

VBE = 0 V; VCE = 700 V; Tj =100°C - - 5 mA

ICEO collector-emitter cut-off current

VCE = 400 V; IB = 0 A; Tlead = 25°C - - 0.1 mA

IEBO emitter-base cut-off current

VEB = 9 V; IC = 0 A; Tlead = 25°C - - 1 mA

VCEOsus collector-emitter sustaining voltage

IB = 0 A; IC = 1 mA; LC = 25 mH; Tlead = 25°C ; Fig. 3; Fig. 4

400 - - V

VCEsat collector-emitter saturation voltage

IC = 0.5 A; IB = 0.1 A; Tlead = 25°C - - 0.5 V

IC = 1 A; IB = 0.25 A; Tlead = 25°C - - 1 V

IC = 1.5 A; IB = 0.5 A; Tlead = 25°C - - 1.5 V

VBEsat base-emitter saturation voltage

IC = 0.5 A; IB = 0.1 A; Tlead = 25°C - - 1 V

IC = 1 A; IB = 0.25 A; Tlead = 25°C - - 1.2 V

VF forward voltage IF = 0.5 A; Tj = 25°C - - 1.5 V

hFE DC current gain IC = 0.5 A ; VCE = 2 V; Tj = 25°C 8 17 25

IC = 1 A ; VCE = 2 V; Tj = 25°C 5 9 15

Dynamic characteristics

ton turn-on time IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A;RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6

- - 1 μs

ts storage time IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A;RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6

- - 4 μs

IC = 1 A; IBon = 0.2 A; VBB = -5 V; LB = 1 μH; Tlead = 25 °C; inductive load; Fig. 7; Fig. 8

- 0.8 - μs

tf fall time IC = 1 A; IBon = 0.2 A; IBoff = -0.2 A;RL = 75 Ω; Tlead = 25 °C; resistive load; Fig. 5; Fig. 6

- - 0.7 μs

IC = 0.5 A; IBon = 0.1 A; VBB = -5 V;LB = 1 μH; Tlead = 25 °C; inductive load; Fig. 7; Fig. 8

- 0.1 - μs


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Fig. 3. Test circuit for collector-emitter sustaining voltage

Fig. 4. Oscilloscope display for collector-emitter sustaining voltage test waveform

VIM = - 6 V to + 8 V; VCC = 250 V; tp = 20 μs; δ = tp/T = 0.01. RB and RL calculated from ICon and IBon requirements

Fig. 5. Test circuit for resistive load switching Fig. 6. Switching times waveforms for resistive load


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VCC = 300 V; VBB = - 5 V; LC = 200 μH; LB = 1 μH.

Fig. 7. Test circuit for inductive load switching Fig. 8. Switching times waveforms for inductive load


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10. Package outline


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11. Revision historyTable 7. Revision history Document ID Release date Data sheet status Change notice SupersedesPHD13003C v.2 20180224 Product data sheet - PHD13003C v.1

Modifications: Change from NXP version to WeEn version

PHD13003C v.1 20100729 Product data sheet - -


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12. Legal information

Data sheet status

Documentstatus [1][2]

Productstatus [3]

Definition

Objective[short] datasheet

Development This document contains data fromthe objective specification for productdevelopment.

Preliminary[short] datasheet

Qualification This document contains data from thepreliminary specification.

Product[short] datasheet

Production This document contains the productspecification.

[1 lease consult the most recently issued document before initiating orcompleting a design.

[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.ween-semi.com.

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Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

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Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

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In the event that customer uses the product for design-in and use inautomotive applications to automotive specifications and standards,customer (a) shall use the product without WeEn Semiconductors’ warrantyof the product for such automotive applications, use and specifications, and(b) whenever customer uses the product for automotive applications beyondWeEn Semiconductors’ specifications such use shall be solely at customer’sown risk, and (c) customer fully indemnifies WeEn Semiconductors forany liability, damages or failed product claims resulting from customerdesign and use of the product for automotive applications beyond WeEnSemiconductors’ standard warranty and WeEn Semiconductors’ productspecifications.

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Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.


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13. Contents1. General description .......................................................12. Features and benefits ...................................................13. Applications ...................................................................14. Quick reference data .....................................................15. Pinning information .......................................................26. Ordering information .....................................................27. Limiting values ..............................................................38. Thermal characteristics ................................................59. Characteristics...............................................................610. Package outline ...........................................................911. Revision history .........................................................1012. Legal information ...................................................... 1113. Contents .....................................................................13

© WeEn Semiconductors Co., Ltd. 2018. All rights reservedFor more information, please visit: http://www.ween-semi.comFor sales office addresses, please send an email to: [email protected] of release: 29 May 2018