NEWATLASPIX:NEWATLASPIX:Development of new pixel detectors for Development of new pixel detectors for

the ATLAS experiment upgradethe ATLAS experiment upgrade

Giulio Pellegrini

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CNM-IMB OverviewCNM-IMB Overview

Clean Room• 1.500 m2• Class 10 to 10.000• 50 staff members • Suitable for VLSI

Laboratories• Packaging• Test and Characterization• Reverse Engineering • Silicon Micromachining• Simulation• CAD• Nanotechnology

Belongs to CSICDevoted to microelectronics175 staff membersDepartments:

• Micro and Nano systems• Electronic System Design

Clean room for full microelectronics fabrication

Instituto de Microelectrónica de Barcelona – IMBCentro Nacional de Microelectrónica – CNM

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Personnel at CNM-IMBPersonnel at CNM-IMB

•Dr. Giulio Pellegrini (IP)

•Dr. Celeste Fleta Corral

•Daniela Bassignana, PhD student

•JuanPablo Balbuena Valenzuela, PhD student

Total EDP= 4

Radiation Detector Group at CNM-IMB.

Clean room staff will support the fabrication of silicon devices.

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ObjectivesObjectives

Contribute to various aspects of the development of pixel sensors for the upgraded ATLAS Inner Detector

• 3D sensors

• 3D thin sensors

• Planar sensors (active edges or slim edges)

• Planar thin sensorsAround30µm

+ve +ve-ve

holes

300µm

n-typeelectrode

p-type electrode

electrons

Particle Around30 µm

+ve +ve-ve

holes

300µm

n-typeelectrode

p-type electrode

electrons

Particle

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Background on 3D Background on 3D Detector StructureDetector Structure

•Invented in 1997 - S. Parker, C. Kenney, J. Segal- First produced in 1999 - Stanford Nanofabrication facility

•Recent development: R&D towards experimental use-Improvements in micromachining make larger-scale, reliable production more feasible

-Simplified structure: Double Sided, G. Pellegrini et al.

CNM-IMB was the second Institute in the world succeeding to fabricate 3D detectors

Nucl. Instr. Meth. A, vol. 395, 328, 1997

IEEE Trans. Nucl. Sci, vol. 54, no. 4, Aug. 2007

Passivation

p+ doped

55m pitch

50m

300m

n+ doped

10m

Oxide

n+ doped

Metal

Poly 3m

Oxide

Metal

50m

TEOS oxide 2m

UBM/bump

n-type Si

Passivation

p+ doped

55m pitch

50m

300m

n+ doped

10m

Oxide

n+ doped

Metal

Poly 3m

Oxide

Metal

50m

TEOS oxide 2m

UBM/bump

n-type Si

N- and p-type columns etched from opposite sides of substrate• Columns do not pass through full substrate thickness • 250μm deep in 300μm substrate.

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ProductionProductionObjectives: In this project we propose the fabrication of 3D pixel detectors in the CNM-IMB clean room facilities for the Atlas collaboration. The pixel detectors will be bump bonded to the FI3 and the new FI4 read out electronics.

The successful fabrication will open the possibility for CNM-IMB together with IFAE to participate in the supply of the detectors and complete modules for the atlas b-layer.

2.9m

TEOS

PolyJunction

2.9m

TEOS

PolyJunction

n-Si

(p+)

2.9m

TEOS

PolyJunction

2.9m

TEOS

PolyJunction

n-Si

(p+)

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Thin and edgeless Thin and edgeless detectorsdetectors

•Thin detectors fabricated in SOI wafers.

•Development of the bump bonding for thin pixel detectors.

•New active edge detectors, pixel and strip configuration.

•New trenched detectors.

300um

Etched backside

Thin membrane

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Other applicationsOther applications

CNM-IMB in the framework of CERN RD50 collaboration has fabricated the first 3D detectors coupled to Medipix2 read out electronics.

In collaboration with University of Glasgow and Diamond light source we have obtained the first images using the synchrotron test beam facilities available at Diamond.

Future applications for 3D detectors:

• Medipix3 for medical imaging.

• Other experiments: FP420, TOTEM, CMS and future accelerators.

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Work PlanWork Plan

The fabrication of 3D detectors and planar detectors with active edges is longer that standard planar ones. This means that one year is insufficient to fabricate, bump bond, irradiate and test the devices.

1 2 3 4 5 6 7 8 9 10 11 12 1 2 3 4 5 6 7 8 9 10 11 12

Participation in the ATLAS Pixel Commissioning CNM + IFAEDesign of 3D mask CNMFabrication in CNM clean room of ATLAS 3D detectors CNMDesign of planar edgeless Atlas pixels CNMFabrication in CNM clean room of edgeless ATLAS pixel CNMThinning of detectors CNM Bump Bonding tests (using samples from the by the collaboration) CNM + IFAEBump Bonding to readout chips CNM + IFAETesting CNM + IFAEIrradiation of detectors CNM + IFAETesst in Test beams CNM + IFAE

Tasks CentreSecondt Year (*)First Year (*)

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CNM collaborationsCNM collaborationsCNM-IMB is participating in 3 collaborations for the Atlas upgrade:• ATLAS 3D Sensor collaboration • Rd50- 3D group• Planar Pixel Sensor collaboration, Atlas

CNM-IMB is also collaborating with different institutes:University of Liverpool – UK

• Detector development and characterization• Radiation hardness studies

University of Glasgow – UK • 3D detectors

Diamond light source

• Test beam with X-rays, active edges

Brookhaven National Laboratory – USA • Stripixel, 3D

Helsinki Institute of Physics

• Thin 3D detectors

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CNM-IMB budgetCNM-IMB budget

Execution costs = 126.000 € Wafers = 11.000€Fabrication in the clean room= 55.000€Mask sets= 50.000€Others= 10.000€

Travels and conferences = 42.000 €Small equipments (Keithley, etc.)= 20.000 €Other costs= 3.500 €

Total= 191.500€

Personnel (1 engineer x 2 years) 73.500 €.

Thanks for your attentionThanks for your attention

Giulio Pellegrini