new evolution of copper wire - ieee · new evolution of copper wire ... mechanism of hast-bga...

TANAKA KIKINZOKU INTERNATIONAL K.K. TANAKA KIKINZOKU INTERNATIONAL K.K.

New Evolution New Evolution of of

Copper Wire Copper Wire

Confidential January 2012Revision 1.0 IEEE-OC

““ConvergenceConvergence””

Sources: Kitco

US$

/oz

Gold price per Ounce during the last decade

In Global Electronics the most emphasizedIn Global Electronics the most emphasizedprecious metal is Goldprecious metal is Gold

VehiclesMobile phonesPCsLCD TVs

etc.

Ru

Pt

Au

Rh

Ag

PdElectrical properties, high corrosion resistance

Electronic devices

Preciousmetal

Question is how to cut the cost while using Gold (Au) metal?

11Reduce the thickness of Au plating on the substrate

Reduce the material cost of PKG

Target is to optimize the combination between the Surface finish material and Wire bond material

22Use alternative metals instead of Au wire

Industry Market Acceptance for Cu Wire Adoption

Top 3-concerns carry over to 2011 & 2012?

Industry Main ConcernsIndustry Main Concernsof Copper Wire Adoptionof Copper Wire Adoption

Source: SEMI

Industry Analysis Copper Wire GrowthIndustry Analysis Copper Wire Growth

Source: Prismark

80,000 kkft => ~24.4Bn meters

Source: Semi

Industry Projection SummaryIndustry Projection SummaryPrismarkPrismark Copper Wire UseCopper Wire Use

2013 2013 ~1.65 Billion Meters~1.65 Billion Meters

Semi Copper Wire UseSemi Copper Wire Use2013 2013 ~ 4.6 Billion Meters~ 4.6 Billion Meters

Aluminum

World Wide Copper Wire Market AdoptionWorld Wide Copper Wire Market Adoption

Source: Tech Search

WW Au, Cu and PCC wire shipped

0%10%20%30%40%50%60%70%80%90%

100%

2010 2011

PCCBare CuGold

Source: SEMI

Source: Tanaka

Tanaka Copper Wire Business & Forecast

Apr

-04

Jul-

04

Oct-

04

Jan

-05

Apr

-05

Jul-

05

Oct-

05

Jan

-06

Apr

-06

Jul-

06

Oct-

06

Jan

-07

Apr

-07

Jul-

07

Oct-

07

Jan

-08

Apr

-08

Jul-

08

Oct-

08

Jan

-09

Apr

-09

Jul-

09

Oct-

09

Jan

-10

Apr

-10

Jul-

10

Oct-

10

Jan

-11

Month/Year

Shipm

ents

Shipm

ents

Tanaka ProjectionsTanaka ProjectionsCopper Wire Ramp Started 2009Copper Wire Ramp Started 2009Copper Wire ShipmentsCopper Wire Shipments

2011 Over 11% Cu Wire Shipments 2011 Over 11% Cu Wire Shipments 2013 Over 40% Cu Wire Shipments2013 Over 40% Cu Wire Shipments

Copper Wire End Markets

Product DistributionProduct Distribution

FCCSP

FCCSP

WB-CSPWB-CSP

Market of Mobile phone & Advanced Portable Systems

Industrial7%

Military/civilaerospace

1%

Automotive7%

Data processing43%

Communication24%

Consumer18%

Industrial8%

Military/civilaerospace

1%

Automotive7%

Data processing40%

Communication27%

Consumer17%

2009 2014

Source: Gartner (2010)

Semiconductor Application Revenue

Source: Gartner

20142009

WB-CSPWB-CSP

Source: Semi

350

300

Bn UnitsN49.088bp

250

150

50

01980 1985 1990 1995 2000 2005 2010 20202015

Bare Die (COB)Through Hole (DIP)

Surface Mount(SO, QFP)

Modified Leadframe(QFN, MLF)

Wire Bond Array Package(BGA, CSP, LGA)

Flip Chip Array Package

Direct Flip Chip(DCA, WLCSP)

Stacked DieStacked PackagePCB Embedded3D

100

200

IC SHIPMENTS BY PACKAGE CATEGORY

Wire bond

Wire bond

Wire bond

Wire bond

Wire bond

Majority of IC interconnects are wire bond

~75%-80%

Technology ItemsTechnology Items HVM (Production) HVM (Production) few years nowfew years now

Qualified & Qualified & HVMHVM

20112011(NPI)(NPI)

2011/2011/20122012

2012/2012/20132013

Wafer TechnologyWafer TechnologyCMOS Low-K ULK /

ELKULK / ELK

ULK / ELK

0.13 um and higher nodes 90/65 nm 45/40

nm 28 nm 22 nm

Technology ItemsTechnology ItemsHVM HVM few few

yearsyears

Qualified Qualified & HVM& HVM

20112011(NPI & (NPI & HVM)HVM)

2011/2011/2012 2012

2012/2012/20132013

Copper WireCopper Wire((Pd_CuPd_Cu/bare Cu)/bare Cu)

Bond Pad Pitch Bond Pad Pitch (um)(um)

65 50 45 40 40

Bond Pad Open Bond Pad Open (um)(um)

58 40 40 35 35

Wire Diameter Wire Diameter (mil)(mil)

0.9 0.7 0.7 0.6 0.6

Copper Copper WirebondWirebond Silicon Node Silicon Node RoadmapRoadmap

TANAKA Cu-Bonding Wires


Copper Technical Copper Technical ChallengesChallenges

Confidential January 2012

Need N2 or Forming Gas ((Gas necessary for Copper wb)

Higher Mechanical Strength (FAB hardness, Work Hardening)

Narrow parameter window at 1st &2nd bonding process

Require halogen free resin

Need additional investments (Cu bonder, Forming gas piping)

Advantages

Disadvantages

Low Material Cost (Low Material Cost (Approx 30-50% lower than Au) Better Conductivity (Approx 20% better than Au)Higher Fusing Current (Approx 30% higher than AHigher Fusing Current (Approx 30% higher than Au))Low Reaction Rates (Cu/Al IMC @ 150Low Reaction Rates (Cu/Al IMC @ 150--300C 10x slower Au/Al) 300C 10x slower Au/Al)

Copper Wire versus Gold Wire

First Bond Second Bond

High ParametersNarrow Range

Cu Wire ParametersNarrow Range

Low ParametersWide Range

Std ParametersWide RangeParameter Range

Low

High

Au

Cu

Cu Wire Bonding Process Window ComparisonCu Wire Bonding Process Window Comparison

➮Copper wire is harder than Gold wire

Cu

Parameter Range

Low

High

Optimum Parameters

Low Parameters

High Parameters

Aluminum splashingshorting to adjacent pad

Lifted Metal

▪ Lifted Metal occurs at lower side of optimum parameters

Existing Common problem in Cu bonding

Parameter Range

Low

High

Cu Optimum Parameters

Low Parameters

High Parameters

Existing Common problem in Cu bondingShort tail / No tail issue

Cu

Au

Parameter Range

Low

High

PdCu closer to Au wire wbperformance

How to achieve Process Window closer to Au for Fine Pitch Bonding???

N2

N2H2


Palladium Coated Palladium Coated CopperCopper


Atomic # 46 (Member of the Platinum Group)Atomic # 46 (Member of the Platinum Group)½½ worlds supply goes into catalytic convertersworlds supply goes into catalytic convertersPalladium is used as an oxidation catalystPalladium is used as an oxidation catalystPalladium is 10% harder than platinumPalladium is 10% harder than platinum

Pt is harder than AuPt is harder than AuPd softer than Cu (good adhesion to Cu wire)Pd softer than Cu (good adhesion to Cu wire)

3N Copper FAB is 30% harder than Au FAB3N Copper FAB is 30% harder than Au FABPdCuPdCu alloy FAB harder than bare Cu FABalloy FAB harder than bare Cu FAB

Oxidation Free (longer storage/shelf & bonder life)Oxidation Free (longer storage/shelf & bonder life)Copper and Gold tensile strengths are comparableCopper and Gold tensile strengths are comparable

Copper has higher elongation than Gold which means Copper can Copper has higher elongation than Gold which means Copper can withstand plastic deformation longerwithstand plastic deformation longer

Palladium Copper bonded products are Palladium Copper bonded products are ‘‘oneone--toto--oneone’’ pin compatible pin compatible with Au bonded products.with Au bonded products.

No form, fit or function changeNo form, fit or function changeSMT and System level customers do not need to do anything SMT and System level customers do not need to do anything different in receipt and use of the Palladium Copper productsdifferent in receipt and use of the Palladium Copper products

Palladium Coated Copper WirePalladium Coated Copper Wire

(Gen I) Palladium Coated(Gen I) Palladium Coated Wire: CLRWire: CLR--11CCopper bonding wire, opper bonding wire, LLong life & ong life & RRobust stitch bondobust stitch bond

Comparison with Bare Copper wireAdvantage Disadvantage

Longer Spool Lengths (1km – 5km/spool)Wider 2nd bond window/Higher 2nd bond pullChemical StabilityBetter HAST (BGA)Longer shelf life; 6 months after manufacturing date, 1 month after opening package (bare Cu 1-week after opening)

Price is higher than bare copper(Au relative value 1.0, bare Cu 0.2, PdCu 0.4 in HVM)

FAB is harder (possible pad damage)Capillary Life

4N Bare Cu wire

Thin Coated layerCLR-1 φ20um

Manufacturing Process Comparison Copper Wire


Next Generation Next Generation


…Bonding Wire

Palladium CoatedPalladium Coated wire: CLRwire: CLR--1A1A

Compare with CLR-1 (Gen I)Advantage Disadvantage

Wider 2nd bond window/Higher 2nd bond pull Slightly softer FABReduce capillary dragFine pitch applicationsSSB bonding**Same Cost as CLR-1 (Gen I)

New QualificationPCN

4N Bare Cu wire

Pd Coated layer

Thin Au layer

CLR-1 (Gen I)

(Gen II)(Gen II)

Capillary drag force set up

Measuring device of Capillary drag force

①

②

③

④

【Measurement condition】・Wire drag speed：10(mm/sec)・Wire drag angle (deg)

①55, ②60, ③65, ④70, ⑤75, ⑥80・Measurement length：100(mm)・Capillary ：SPT・Capillary condition

①New,・Wire type

①CLR-1Aφ18um,②CLR-1φ18um③Competitorφ18um

【Measurement result】・Summarized by from four

directions data averaged

Angle

Capillary drag force set upCLR-1 CLR-1A EX-1p_sp1 EX-1p_sp2

55 0.06 0.01 0.17 0.1660 0.14 0.04 0.48 0.2365 0.19 0.09 0.65 0.4070 0.28 0.15 0.81 0.6975 0.41 0.25 0.94 1.0880 0.59 0.34 - -

AVGAngle(°)

Competitor n=2Competitor n=1CLR-1 CLR-1A EX-1p_sp1 EX-1p_sp255 0.06 0.01 0.17 0.1660 0.14 0.04 0.48 0.2365 0.19 0.09 0.65 0.4070 0.28 0.15 0.81 0.6975 0.41 0.25 0.94 1.0880 0.59 0.34 - -

AVGAngle(°)

Competitor n=2Competitor n=1CLR-1 17.97

CLR-1A 17.73EX-1p 17.64

mg値(um)

Competitor

CLR-1 17.97CLR-1A 17.73EX-1p 17.64

mg値(um)

Competitor

0.0

0.2

0.4

0.6

0.8

1.0

1.2

55 60 65 70 75 80

Angle(°)

Cap

illar

y dr

ag A

ve(g

f)

CLR-1

CLR-1A

EX-1p_sp1

EX-1p_sp2

W ire Breaking !

Competitor n2Competitor n1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

55 60 65 70 75 80

Angle(°)

Cap

illar

y dr

ag A

ve(g

f)

CLR-1

CLR-1A

EX-1p_sp1

EX-1p_sp2

W ire Breaking !


0.0

0.2

0.4

0.6

0.8

1.0

1.2

55 60 65 70 75 80

Angle(°)

Cap

illar

y dr

ag A

ve(g

f)

CLR-1

CLR-1A

EX-1p_sp1

EX-1p_sp2

W ire Breaking !


Au/Cu/Au/Cu/PdCuPdCu Hardness & Compression ComparisonsHardness & Compression Comparisons

FAB Hv hardness Comparisons

8076

74 72

60

65

70

75

80

85

90

95

100

Coating A Coating B CLR-1 TCA1

HV

n=1n=2n=3n=4n=5AVEMAXMIN

FAB make・Wire: TCA1, CLR-1, Competitor φ20um・FAB: φ38um・Bonder: UTC-3000・EFO: 80mA, 0.12-0.14ms・Gas: N2+5%H2, 0.5L/min・Measurement count n=3-5

Hv hardness【Measurement Equipment】・Hardness Tester ：MVK-3 (AKASHI)【Measurement condition】・Force ：2 gf・Press Speed ：3μm/sec・Hold time ：10sec・Measurement count n=5 each

Molded by epoxy resinPolish and buff

Ion milling

Ar+

Hv hardness

FAB Hv hardness ： Competitor1＞ Competitor2＞ CLR-1A＞ TCA1

CLR-1ACompetitor1 Competitor2 TCA1

FAB Compression Test (Gen I/Gen II vs. Competitor)FAB Compression Test (Gen I/Gen II vs. Competitor)

Compression Test："CLR-1A" is equal to "CLR-1“

2nd Bond Process Window PPF QFN2nd-Bond parameter window

Bonder:UTC-3000Wire dia. :20umCapillary:SU-25080-385F-ZU34TPGas:N2-5%H2 0.5l/minFrame :PPF FlatBond Temp.:240degC160wires

←Pd ←0.03um

Ni ←0.8um

Cu ﾌﾚｰﾑ

Au = 0.006um

Frame

The parameter window of CLR-1A spreads in the low condition side in comparison with Competitor wire.

160wires

US190 US200 US210 US220 US240 US250 US260 US270 US280

CLR-1A

Competitor

：Non stop：1stop：2stops up

SHTLNSOL

【Bonding condition】【Frame structure】【Machine Stop】

0123456789

10

US190 US200 US210 US220 US240 US250 US260 US270 US280

2nd

Pull

Load [

gf]

CLR-1A

Competitor

【2nd Bond】Force:15gn=20 AVG.

Bond parameter

2nd Bond stitch pull PPF QFN Data ComparisonEvaluation of wire pull load

Bonder:UTC-3000Wire dia. :20umCapillary:SU-25080-385F-ZU34TPGas:N2-5%H2 0.5l/minFrame :PPF FlatBond Temp.:240degC

1000um

250um

PullPull condition

Comparisons (Gen I vs. Gen II) CLRComparisons (Gen I vs. Gen II) CLR--1 & CLR1 & CLR--1A1A

50

55

60

65

70

75

80

Lot.A Lot.B Lot.C Lot.D

CLR-1A CLR-1

Bre

akin

g Loa

d (m

N)

6

9

12

15

Lot.A Lot.B Lot.C Lot.D

CLR-1A CLR-1

Elo

nga

tion

(%)

Mechanical Property："CLR-1A" is equal to "CLR-1“Wedge pull strength and Ball shear response is equal

CLRCLR--1A (Gen II) SSB bonding1A (Gen II) SSB bonding

CLRCLR--1A (Gen II) SSB bonding Comparison Data1A (Gen II) SSB bonding Comparison Data


ReliabilityReliability


UHAST Comparisons (Gen I vs. bare Copper)UHAST Comparisons (Gen I vs. bare Copper)

UHAST Halogen Free MC："CLR-1“ is better than bare Copper

HAST of CLR-1 bonded BGA and molded halogen-free resin is better than bare copper.

OK boundary

Resistance UPboundary0

20

40

60

80

100

0 100 200 300 400 500Strage time [hr]

Failu

re ra

tio (%

)Fa

ilure

=ini

tial r

esis

tann

ce ×

30%

UP

TCB1TCA1CLR-1

UHAST, 130degC, 85%rh, BGA-HF resin, WD 25um

Storage time [hr]

UHAST Comparisons (Gen I vs. Gen II)UHAST Comparisons (Gen I vs. Gen II)

UHAST w/Halogen MC："CLR-1A" is equal to "CLR-1“

UHAST Comparisons (Gen I vs. Gen II)UHAST Comparisons (Gen I vs. Gen II)

UHAST Halogen Free MC："CLR-1A" is equal to "CLR-1“

HTS Comparisons (Gen I/Gen II vs. Competitor)HTS Comparisons (Gen I/Gen II vs. Competitor)

HTS："CLR-1A" is better than both CLR-1 & Competitor

Mechanism of HAST-BGA failures with Copper Wire

Cu/Al boundary was attacked by moisture on HAST test of BGA.

H2O

Al splash

H2O

Al splash

The BGA substrate is bent more easily by heat & Assy handling compared with lead frames. Water can seep into boundary of Al splash and Cu 1st bond.

It is presumed that the possibility of preventing moisture attack is HIGH if Pd exists on the copper surface.

Bare Cu

Pd/Cu

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Oxidation

O-H-

H-

O- Al2O3

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Oxidation

O-H-

H-O-O-H-H-

H-H-

O-O-O- Al2O32-

2-

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Oxidation

O-H-

H-

O- Al2O3

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

Oxidation

O-H-

H-O-O-H-H-

H-H-

O-O-O- Al2O32-

2-

Al

Cul4, Cu2Al

CuAl

uAl2

Al

Cul4, Cu2Al

CuAl

uAl2

Al

Cul4, Cu2Al

CuAl

uAl2

Pd-Cu

Pd-Al

Pd

Al

Cul4, Cu2Al

CuAl

uAl2

Al

Cul4, Cu2Al

CuAl

uAl2

Al

Cul4, Cu2Al

CuAl

uAl2

Al

Cul4, Cu2Al

CuAl

uAl2

Al

Cul4, Cu2Al

CuAl

uAl2

Al

Cul4, Cu2Al

CuAl

uAl2

Pd-Cu

Pd-Al

Pd

Mechanism of HTS LF failures with Copper Wire

Al

CuCu9Al4, Cu2Al

CuAl

CuAl2

<1um

Al

CuAlBr3

CuAl2

CuBr-

Al

Cu

Cu/Al IMC

Aging

Cu/Al + Br - → Al2Br3 + Cu*Aluminum bromide MP. 97.5 deg C*Water-soluble

Cu/Al boundary was attacked by halogen contained in resin on HTS test.

Even halogen free resin, halogens of less than 0.09wt%. *JPCAstandard can exist（JPCA-ES-01-1999）

Cu/Al IMC change to aluminum bromide by priority.

Bromination

Cu

Al

CuCrack

CuAl2melt

CuCu


Fine Pitch Fine Pitch PdCuPdCu


PdCu

45

Platform :Device : BGA substrate with 1.4um Al metallizationWire type : Tanaka Pd coated copper 0.7mil Wire bonder : ASM Eagle 60APCapillary : SU-20058-233E-ZU36TP-200

Ultra Fine Pitch Capability – 45um BPP with 0.7mil Pd Copper wire

Ball size 29umBall size + Al splash = 32‐33um

Wire Pull Ball Shear

Ave 7.344 8.9562

Max 7.862 9.619

Min 6.74 8.402

std. dev 0.272 0.326

after ball shear– Al shear


Plating OverviewPlating OverviewPdCuPdCu Wire PerformanceWire Performance


Lead Frame Plating TestedLead Frame Plating Tested

【Electro Ag plating】【Electro Au plating】【Pd-PPF】

Ra=0.236umRz=4.867um



←

Pd ←0.03um

Ni ←0.8um

Cu Frame

Au = 0.006umAu ←0.2um

Ni ←1um

Cu ←1um

42Alloy Frame

Ag ←2.5um Min

Cu ←0.005um

42Alloy Frame

Parameter window of 2nd bondParameter window of 2nd bond

20 25 30 35 40 45 50 55 60 65 70 7540 0 0 0 0 0 0 0 0 0 0 0 0506070 0 0 0 0 0 0 0 0 0 0 0 0

US

Force(g)

Agめっき

20 25 30 35 40 45 50 55 60 65 70 7540 50 26 11 1 0 0 0 0 0 0 0 050 7 0 0 0 060 0 0 0 0 070 0 0 0 0 0

USAuめっき

Force(g)

20 25 30 35 40 45 50 55 60 65 70 7540 50 50 41 11 0 0 0 050 50 50 33 16 0 0 0 060 50 50 30 9 0 0 0 070 4 0 0 0 0 0 0 0

Force(g)

USPdめっき

NSOL wire count in 50wires

Ag plating

Au plating

Pd plating

Wire diameter : 20um

20 25 30 35 40 45 50 55 60 65 70 7540 50 32 1 0 0 0 0 050 50 50 46 34 14 2 0 060 50 50 28 16 5 1 0 070 43 26 7 3 0 0 0 0

AgめっきUS

Force(g)

20 25 30 35 40 45 50 55 60 65 70 7540 50 50 40 1 0 0 0 0 0 0 050 50 43 3 0 0 0 0 060 8 0 0 070 10 1 0 0 0

AuめっきUS

Force(g)

20 25 30 35 40 45 50 55 60 65 70 7540 50 50 38 0 0 0 0 050 50 50 46 36 1 0 0 060 50 50 50 37 11 0 0 070 50 49 33 12 2 0 0 0

PdめっきUS

Force(g)

Ag plating

Au plating

Pd plating

-Bare Cu 4N wire –（TCA1）

-Pd coated Cu wire –(CL1-A)

⇒不圧着：0本⇒不圧着：5本以下⇒不圧着：6本以上

NSOL=0 /50NSOL<5 /50NSOL>=5 /50

Various Wire Process WindowsVarious Wire Process WindowsPCB PlatingPCB Plating

【ENEPIG】

←

Pd ←0.05um

Ni ←5-7um

Cu PCB

Au = 0.05-0.10um

【ENIG】

←

Ni ←5-7um

Cu PCB

Au = 0.1-0.2um

Surface finish material on PCB

Wire bond materialAu wire(GFC)

Ag wire (SEA)

Bare Cu wire (TCA1)

Pd coated Cu wire (CLR1)

Pd coated Cu wire(CLR1A)

- Electroless Plating process -

0

0

0

0

45

0000000000070

0000000000060

0000000000050

0000000000040

Force(g)

7570656055504035302520

Ultrasonic energy (mA)Process

Au wire (GFC) Ag wire (SEA)ENIG process (ENIG process (ElectrolessElectroless Ni/Au)Ni/Au)

Au:0.2um

0

0

0

0

45

0000000000070

0000000000060

0000000000050

0000000000040

Force(g)

7570656055504035302520


ENEPIG process (ENEPIG process (ElectrolessElectroless Ni/Pd/Au)Ni/Pd/Au)

Pd:0.05umAu:0.05um

Pd:0.05umAu:0.10um

0

0

0

0

45

0000000000070

0000000000060

0000000000050

0000000000040

Force(g)

7570656055504035302520


0

0

0

0

45

0000000000070

0000000000060

0000000000050

0000000000040

Force(g)

7570656055504035302520


0

0

0

0

45

0000000000070

0000000000060

0000000000050

0000000000040

Force(g)

7570656055504035302520


0

0

0

0

45

0000000000070

0000000000060

0000000000050

0000000000040

Force(g)

7570656055504035302520


0

0

0

0

45

0000000000070

0000000000060

0000000000050

0000000000040

Force(g)

7570656055504035302520


0

0

0

0

45

0000000000070

0000000000060

0000000000050

0000000000040

Force(g)

7570656055504035302520


Au:0. １um


NSOL=0 /20NSOL<5 /20NSOL>=5 /20

Au wire (GFC) Ag wire (SEA)

Parameter window of 2nd bond (ENIG Parameter window of 2nd bond (ENIG vsvs ENEPIG )ENEPIG )

0

0

2

3

45

000000000122070

0000000412202060

00000061220202050

00000171520202040

Force(g)

7570656055504035302520


Bare Cu wire (TCA1) Pd coated Cu wire (CLR1)

ENIG process (ENIG process (ElectrolessElectroless Ni/Au)Ni/Au)

Au:0.2um

0

0

0

0

45

00000000001370

0000000002560

00000000071050

000000000101540

Force(g)

7570656055504035302520


0

0

0

0

45

0000000000070

0000000000060

0000000001450

00000000041040

Force (g)

7570656055504035302520


Pd coated Cu wire (CLR1A)

ENEPIG process (ENEPIG process (ElectrolessElectroless Ni/Pd/Au)Ni/Pd/Au)

Pd:0.05umAu:0.05um

Pd:0.05umAu:0.10um

0

0

0

3

45

00000000031170

00000000172060

0000002414202050

00000051320202040

Force(g)

7570656055504035302520


0

1

2

5

45

0000000012202070

0000002118202060

0000004820202050

00000271620202040

Force(g)

7570656055504035302520


Bare Cu wire (TCA1) Pd coated Cu wire (CLR1) Pd coated Cu wire (CLR1A)

0

0

0

0

45

0000000002470

0000000015860

00000000271250

00000002491640

Force(g)

7570656055504035302520


0

0

0

0

45

00000000141170

00000000371460

00000014691650

000000359132040

Force(g)

7570656055504035302520


0

0

0

0

45

0000000000070

0000000000060

0000000001350

00000000151240

Force(g)

7570656055504035302520


0

0

0

0

45

0000000000270

0000000011460

0000000025850

00000001381640

Force(g)

7570656055504035302520


0

0

6

10

45

000000000122070

0000002610202060

000013131620202050

000235132020202040

Force(g)

7570656055504035302520


0

0

0

0

45

00000000032070

00000000362060

000000028202050

0000003711202040

Force(g)

7570656055504035302520


0

0

0

0

45

0000000000670

00000000021060

000000001121550

000000025152040

Force(g)

7570656055504035302520


Au:0. １um


NSOL=0 /20NSOL<5 /20NSOL>=5 /20

Wire diameter : 20umAging condition : 175deg.C-4Hrs.

Parameter window of 2nd bond (ENIG Parameter window of 2nd bond (ENIG vsvs ENEPIG )ENEPIG )

New release !!

SEA ( Silver Alloy Wire )Please contact us for more information

new evolution of copper wire - ieee · new evolution of copper wire ... mechanism of hast-bga...

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