NE

NE Handbook Power Device

6 1

6 9 MOSFET10 SJMOSFET 11 IGBT12 Si13 17 SiC19 GaN 21 SiCGaN

22 2

22 SiC SBD26 SiC MOSFET30 SiC BJT 32 SiC34 GaN38

42 3

42 46 48 52 54

CO

NT

EN

TS

NE

Ha

nd

bo

ok

Power D

evice

2

PR

3

Power Device

SiC

1958

Si

SiC

1000V

LEDMOSFETIGBTInsulated Gate Bipolar TransistorFRDFast Recov-ery DiodeSBDSchottky Barrier DiodeIC1

1500VSi600VSiC

Si100VVMOSFETECOMOSTM

0.8mm0.6mm3V20A2012MOSFET2.0mm2.0mmHUML2020540V100V24VDC-DC40V

UPSUPS

TVTV

EV/HEVPCS

EV/HEVPCS

DSCDSC

IGBTIGBT

10V 100V 1kV 10kV

10kA

1kA

100A

10A

MOSFETMOSFET

PCPC

1

4

PR

5

Power Device

12SiC-MOSFET20123SiCSiC3SiCSiCSiC21VF0.1V0.15VSBDMOSFET1200V2SCTSiC SBDMOSFETSCH20121200V180ASiC-MOS1700VSiC

MOSFET201249A100A660V100VMOSFETV100A

MOSFETtrrPrestoMOSTM2MOSFETtrrPrestoMOSTM80

SiC1000V

600VSiCSiSiC20104SiC SBD

SiC

2MOSFETPrestoMOSTM

20123SiC

/ 615-858521 TEL 075311-2121FAX 075315-0172URLhttp://www.rohm.co.jp/

6 7

NE Handbook Power Device1

MOSFETmetal-oxide-semiconductor field-effect transistorIGBTinsulated gate bipolar transistor1

Power Dev ice

CO2/302

1MOSFETSJMOSFETIGBTSiCMOSFET

1 IGBTVCEsat

MOSFET SJMOSFET IGBT SiCMOSFET V500V 500V1kV 400V10kV 600VkV 1

Fairchild semiconductorInfineon TechnologiesInternational RectifierVishay Intertechnology

Infineon TechnologiesSTMicroelectron-ics

CreeInfineonTechnologies

Infineon Technologies Semikron STMicroelectronics Vishay Intertechnology

8 9

1 NE Handbook Power Device

21/16MOSFETSJsuper junctionMOSFETIGBT

MOSFETPower MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor

Vin

SW1

SW2

L

Cout

Cin

Vout

1DC-DCDC-DC

MOSFETMOSFETDMOSdouble diffused MOSFET10V500V10V500V30Vm500V900V500V

nepi

n

pn

MOSFETMOSFET

10 11

1 NE Handbook Power Device

500VMOSFETSJMOSFET1998SJMOSFETp500V1kVSJMOSFETp

400V10kVIGBTMOSMOSFET1.5V50kHzMOSFETMOSFETIGBTMOSFET100kHz

SJMOSFETSuper Junct ion Power MOSFET

--

-

-

--

p

n

pn

SJMOSFETMOSFETp

IGBTInsu lated Gate Bipolar Transistor

n-

np

n

p

IGBTMOS

Infineon Technologies

12 13

1 NE Handbook Power Device

SiCGaNSiMOSFETRDSONSiSJSJMOSFETSi

SiPer formance L imitat ions of Si l icon Dev ices

SiCGaNSiCGaNSiC20018Infineon TechnologiesSBD20102011CreeMOSFETMOSFETJFETSiCGaN20102 International RectifierEfficient Power Conversion

Si

Next Generat ion Power Dev ice

SiSJMOSFET

Infineon Technologies

SiMOSFET

SJMOSFET

SJMOSFET

12

10

8

6

4

2

0400 500 600

700 800 900V

mmm2

SiMOSFET

14 15

1 NE Handbook Power Device

SiSiCGaN1123

1/1000

SiCGaNSi1SiCGaNSi1/101/10SiCGaNSi2

10SiCGaN1001001/100SiCGaNSi1/10001SiCGaNSi23

SiCGaNSiCGaNSiSiC4H-SiC

Si SiC GaN

1.12eV 3.26eV 3.4eV

11.9 9.7 9.5

3.0105V/cm 2.7106V/cm 3.5106V/cm

1.0107cm/s 2.2107cm/s 2.7107cm/s

1350cm2/Vs 1000cm2/Vs 900cm2/Vs

1.5W/cmK 4.9W/cmK 2W/cmK

16 17

1 NE Handbook Power Device

1/101/10SiCSi3GaN1.4

250V@50A/cm2

Si-MOSFET

ND41013cm-3 ND41015cm-3

SiC-MOSFET

10030m

1.2V@50A/cm2

ND:

Pnn nn

P

n330m330m

nn nnP P

1/2001/200

1/101/10

1SiCMOSFETSi11/10100SiCSi1/10001/200

SiCSiC Wafer

N

n

p

n

2/

1pn

SiCMOSFETpnSiC

SiCGaNSiSiCGaNSiCSiCSiCSiC

18 19

1 NE Handbook Power Device

GaNAlN

GaN

AlGaNAlGaNGaNGaN

SiCSiGaN

GaNGaNHEMThigh electron mobility transistor

SiC104/cm2SBDMOSFET200 /cm2MOSFET

114SiC46SiC

GaNGaN Wafer

GaN2010SiGaNLEDLED 200V30AGaN

20 21

1 NE Handbook Power Device

10 100 1000V

MOSFETMOSFET

GaNGaN

IGBTIGBTSJMOSFETSJMOSFET

SiCSiC

10000

A

1000

100

10

1

SiC600VSiC600VGaN600V

SiGaNGaNGaNGaN246Si81105 /cm2GaN102103/cm2GaN6GaNGaNSiCGaN

SiCGaNSiC and GaN

SiCSiIGBT600VIGBTSiCMOSFETIGBTGaNSiCV 600VMOSFETSJMOSFETGaNSi

22 23

2 NE Handbook Power Device

SiCSBD2001Infineon TechnologiesSTMicroelectronicsCree600V10A SiCSBDSCS110A2010410SiCSBDSiC2010SiCSBD2010720113 SiCSBD20069SiCSBDSiCSBDSiC1

SiCSBDSiC Schot tky Bar r ier Diode

1SiCSiCSiCSBDSiCrystalSiC

4201262013SiCSBDSiCSiSiSiCSiSiC

24 25

2 NE Handbook Power Device

2012

2012 2011SiCSBDRJS6005TDPPSi120122 MCU IC

SiCSBD1.35VSiC SBDSCS210AG/AM20126310

31010SiCSBD

2SiCSBDSi1 SiCSBDSi1

26 27

2 NE Handbook Power Device

SiCMOSFETSiC Metal-Oxide-Semiconductor Field-Effect Diode

SiCSiCSi

SiSiCSiCSiMOSFET

SiCMOSFET 201012Cree201111SiC1700Cree

SiCMOSFETSi1/10

SiCMOSFETJFETJFETSiMOSFET1/20SiCMOSFET1/7SiCMOSFET

1SiCMOSFETCree20111SiCMOSFET

Cree

28 29

2 NE Handbook Power Device

2 600V 0.79m cm21200V1.41mcm22013HOYA3CSiCMOSFETSiC4H3CSiCSi

3CSiCMOSFET370cm2/Vs4H3MOSFET300178cm2/Vs3CSiCMOSFETHOYA3CSiCMOSFET3CSiC

mcm

2

SiCMOSFET

3

2

1

0

80

6m4m

350m100m

21.5

SiC

SiC70

a bSiCMOSFET

2SiCMOSFET

mcm

2

SiCMOSFET

3

2

1

0

80

6m4m

350m100m

21.5

SiC

SiC70

a bSiCMOSFET

30 31

2 NE Handbook Power Device

SiC BJTBJTBJTBJTBJT50A100A50A 0.54cm20.25cm2145250501100V1.7mcm2100A0.790.73cm20.5cm2135250

721200V3.5mcm22506.6mcm2257335SiCBJT12002001002572BJTSiC335

SiCBJTSiC Bipolar Junction Transistor

1200BJT

105 104 103 102 101

400

350

300

250

200

150

100

50

0

257BJT

335BJT

A

2

n-SiC

p-SiC

n-SiC

n-SiC

SiO2

p-SiC p-SiC

32 33

2 NE Handbook Power Device

2012SiCSiCSiC20123SiCSiCSiCSi IGBT85100kHzSi IGBT10

SiC1200V100A1100A200400ASi IGBT400A Si IGBT5020127SiCSiCSiC53600V21200V1SiC

SiCSiC Module

aSiC c 1200V 100A

100kHz

122mm46mm17mm

IGBT35

SiCSiCSBDMOSFETSiC1200V100Aa

b

SiCSBD SiCSBD

SiCMOSFET

SiCMOSFET

34 35

2 NE Handbook Power Device

GaN1GaN2GaNSi33GaNGaNIC11GaNSi

SiSi62SiGaNpGaN21.1kV20112012600V1.11.3

GaNGaN Power Devices

1GaNGaNGaN

IC

56Si

GaN

2GaNpGaN

140

120

100

80

60

40

20

00 100 200 300 400

mm

V

36 37

2 NE Handbook Power Device

200V1kV1.7kVGaN

37.3mGaN50nmGaN2.2kVSipSiGaN4GaN1.9m2.2kV3kV3GaNGaNEPC100V56VMOSFET2020VNational SemiconductorICHEMThigh electron mobility transistorGaN2012

HEMTGaN

31.7kV1.7kVGaN

4SipGaNSiGaN

Si

GaNGaN

AlGaNAlGaNSiO2

CGaN

CGaN

GaN50nm7.3m

p p

Si

GaN

AlGaN

38 39

2 NE Handbook Power Device

SiCGaNGa2O3NICTGa2O31NEDO NICTMESFETmetal-semiconductor field effect transistor

257V5A/mm

SiCGaN

SiCGaN

2Ga2O34.84.9eVSi43.3eVSiC3.4eVGaN8MV/cmSi20SiCGaN2Ga2O3SiCGaN

Gall ium Oxide

1Ga2O3NICTGa2O3a257Vb

Ti/Au Pt/Ti/Au Ti/Au

SnnGa2O3300nm

MgGa2O3010

ba

1.4mS2.3mS/mm

257V

3A5A/mm

/ 10

4

40 41

2 NE Handbook Power Device

SiC

3k4kVNICTFZf loat ing zoneEFG

edge-defined film-fed growthGa2O3FZEFGLED68SiCGaN

Ga2O3FZ6mm4mmNICT6Ga2O31SiCGa2O32015 4MOSFET2020

2SiCGaNGa2O3aGa2O3GaNSiCb

a b

10

1

0.1

0.0110 100 1 10

V

mcm

2

Si

SiC4H

GaN

Ga2O3

Ga2O3 Si SiC4H GaN

(eV) 4.84.9 1.1 3.3 3.4 5.5

(cm2/Vs) 300 1400 1000 1200 2000

(MV/cm) 8 0.3 2.5 3.3 10

10 11.8 9.7 9 5.5

Ec3 3444 1 340 870 24664

Ga2O3 Si SiC4H GaN

(eV) 4.84.9 1.1 3.3 3.4 5.5

(cm2/Vs) 300 1400 1000 1200 2000

(MV/cm) 8 0.3 2.5 3.3 10

10 11.8 9.7 9 5.5

Ec3 3444 1 340 870 24664

42 43

3 NE Handbook Power Device

SiCDC-DCSiCSiCSiCIPMintelligent power moduleSiCSi2/31/3SiCSi8203025

60kW/L20122012523251

Automobi le

1

SiSiC68%0.5L60kW/L30kW180SiC70kW2

44 45

3 NE Handbook Power Device

10 SiCSiCSi2014Si

3SiCIC3SiQMETSiCSiC-QMETSiCMOSFETSBD

3IC3

2

46 47

3 NE Handbook Power Device

Car Audio System

42201112311SiCSBDA-110S II 308CCSLR 12 A-110S IISiCSBDBD01

SiCSBD2A-110S IISiSBD SiSBD1/31/4 SiC

1308CCSiCSBD

2SLR SiCSBD

48 49

3 NE Handbook Power Device

SiC1201110SiCSBD01201112SiCSBD1700V600/750V1500V3300VSiCSBD20124SiC1Si

302SiCSBD403SiSiC4SiCSi

Rai lway

1700V1200A

1700V1200A

3300V1200A

1700V1200A

1700V1200A

3300V1200A

1 SiCSiC1700V3300V

50 51

3 NE Handbook Power Device

21231SiCSBDSiCSBDSiIGBT55952

3540kmSiSiCSi70km2SiC340

a

30

Si

SiCSBD

b

Si SiCSBD

3540 70

km/h

3540 70

km/h

2SiCSBDSi30

52 53

3 NE Handbook Power Device

SiCMOSFETSBD1SiSiCSiPV-PN50G1298SiSiC98AC98.2

982 97.5SiSiCSiCSTMicroelectronicsSiCSBDSTPSC806G95

Photovolta ic System

1SiC

298SiC298

SiC

Si

400020000

100

98

96

94

92

90

W

2

54 55

3 NE Handbook Power Device

SiCSBD201010 MSZ-ZW102.8kW3.6kW2SiCSBD12.2kW7.1kWZW2SiCSBDSiC-SBDSiC-SBD152

Home Appl iance

SiC2IGBTSiC MOSFETSiCSBDSiCSiCCreeSiCSiC

SiC2011

1SiCSBDSiCSBD

MSZ-ZW

2SiCSBD

56

3

SiCMOSFET36.78MHz95 50WEL2SiC

3SiCMOSFET

NE

BP

108-8646 1-17-3NBF

2012 9

BP2012 PrintedinJapan

www.rohm.co.jp