national aeronautics and space administration technical
TRANSCRIPT
Technical Primer on Design and SPICE Modeling of Circuits for NASA Glenn SiC JFET IC Generation 13 Prototype Wafer RunPart 2: SiC Resistor Behavior and SPICE Modeling
Philip G. NeudeckNASA Glenn Research Center, Cleveland, Ohio USA
National Aeronautics and Space Administration
https://go.nasa.gov/sichttps://go.nasa.gov/jfetic
May 2021
May 2021SiC Resistor Modeling for IC Generation 13 1
Outline
!"#$%&'()*)+,#-.%/.0%123 40" (3&'5((%*#678$93 40" (3&'5((%*#:%909;)/9
<5/;#=2#40" 678$#>%'5.0)/#5(?#4<!"8#@)?%*0(+
<5/;#A2#40" :%909;)/#>%'5.0)/#5(?#4<!"8#@)?%*0(+
B)5*2#8(5C*%#5(,)(%#;)#4<!"83D)?%*#5(?#?%90+(#EFF#G"#?H/5C*%#0(;%+/5;%?#&0/&H0;9#I)/#;'%0/#0(;%(?%?#5JJ*0&5;0)(K
!"#$%&'()*+,-./0&1/2-,3(41-/&1/&567&81/*9&:,-;1060&1/&4<696&:,696/4(41-/9&(,6&*6=&4-&/66060&46)</-8-+=&./06,94(/01/+>
May 2021SiC Resistor Modeling for IC Generation 13 2
+ VIN -- VOUT +
VSS
Diff-Amp Level-Shifters
VDD VDD VDD VDD
VSS
VSS
8 sq.
36µm6µm
36µm6µm
36µm6µm
50 sq. 50 sq.36µm6µm
36µm6µm
30 sq. 30 sq.
30 sq. 30 sq.
Circuit Approach
All integrated circuits in this project are comprised of interconnected 4H-SiC n-JFET’s and 4H-SiC n-resistors.
!""#$%&&'(#))*&+(,*-(-,./0)-+1%20")*-(-)1-(2,*&+(,*-(-,./0)3456445789:,';<
May 2021SiC Resistor Modeling for IC Generation 13 3
SiC Resistor Modeling for IC Generation 13 4
!"# $%&"&'()*+%,-."()
=%"$</>>/?2*.$@$(>2;"($(ABB-+2C"$&%"$+"(2(&/+$(&+A1&A+"$-*;$(AD(&-*&2->$&"B'"+-&A+"$-*;$(AD(&+-&"$D/;EFD2-($;"'"*;"*1"$/<$+"(2(&/+$">"1&+21->$'+/'"+&2"( /D("+0";$2*$'-(&$GH!H$I>"**$JK$?-<"+$+A*(,
=%"("$(AD(&-*&2->$&"B'"+-&A+"$-*;$(AD(&+-&"$D/;EFD2-($;"'"*;"*12"($BA(&$D"$A*;"+(&//;$-*;$&-L"*$2*&/$-11/A*& ?%"*$1/*;A1&2*.$;"(2.*$-*;$!MJKN$B/;">2*.$/<$12+1A2&($&/$D"$2B'>"B"*&";$2*$&%"$GH!H$I>"**$!2K OPN=$JK$Q"+(2/*$53$?-<"+$+A*,
May 2021
Resistor Dependence on Wafer Position
SiC n-channel resistors exhibit negligible wafer position dependence.- The shallow N implant is uniform and provides more conductance than n-channel epilayer.
n-SiC Sheet Resistance (RSheetN) from Transmission Line Method (TLM) data
May 2021SiC Resistor Modeling for IC Generation 13 5
Resistor Dependence on Temperature
?!"##$ @(/0&?A&;(8.69&1/),6(969&(7-.4&BC2-80&(9&#&1/),6(969&2,-3&DB&EF&4-&BGG&EF>C F-/91946/4&4-&21,94C-,06,&514<&:,1-,&/C4=:6&HICJ1F&)-/0.)41;14=&;9>&#&94.0169>
May 2021SiC Resistor Modeling for IC Generation 13 6
SiC Resistor Modeling for IC Generation 13 7
Resistor Dependence on Substrate Body Bias Effect
J66%&<44:9%KK/4,9>/(9(>+-;K(,)<1;6K/(9(K)(91>/4,9>/(9(>+-;KDGLMGGGNHOG>:02(/0&<44:9%KK/4,9>/(9(>+-;K(,)<1;6K/(9(K)(91>/4,9>/(9(>+-;KDGLPGGGGOBM>:02
J.794,(46&7-0=&71(9&6226)4&-/&J1F QF&,69194-,&686)4,1)(8&)<(,()46,1941)9&19&91+/121)(/4>C '68-5&:8-49&9<-5&<-5&7-0=&6226)4&(226)49&,69194-,&).,,6/4C;-84(+6&:,-:6,4169>C JRQF$&3-068&4<(4&())-./49&2-,&@1>6>S&1/)8.069A&7-0=&71(9&6226)4&19&,6)-336/060>
May 2021
SiC Resistor Modeling for IC Generation 13 8
!"# $%&"&'()*!/0#1*2(3%4"56
May 2021
NASA Glenn SiC Resistor SPICE Modeling ApproachMany different SPICE versions and enhancements are available, but most share “baseline” features and device models from original SPICE version (developed at UC Berkeley).
However, baseline version SPICE resistor model DOES NOT include body bias effect that significantly impacts electrical behavior of NASA-implemented IC devices.
R-(">2*"$!MJKN$GST!$UNQNU$5$B/;">$V*F1%-**">$ST!PN=W$&%-&$2*1>A;"($D/;E$"<<"1&$02-$!MJKN$'-+-B"&"+$IHSSHX$2($&%"+"</+"$"B'>/E";$&/$B/;">$!2K +"(2(&/+($&/$<2+(&F/+;"+$-11A+-1E$MYTQJZNZ#
F P/+?-+;$D2-($J!$HQTJZNZ$</+$(AD(&+-&"$'* [A*1&2/*(,F \-<"+$(AD(&+-&"$D2-($0/>&-."$2($1/**"1&";$&/$.-&"$-*;$DA>L$&"+B2*->($/<$->>$B/;">";$
;"021"($2*$/+;"+$&/$'+/'"+>E$B/;">$D/;E$D2-($"<<"1&,F ]!2&A-&2/*->>E$1/++"1&^$!MJKN$+"(2(&/+$B/;">($_$'-+-B"&"+($-+"$"B'>/E";,
`-*;>"$+"(2(&/+$&"B'"+-&A+"$-*;$D/;E$D2-($;"'"*;"*1"$DE$(">"1&2*.$&%"$1/++"('/*;2*.$+"(2(&/+$!MJKN$B/;">$<+/B$&%"$&-D>"$/*$&%"$*"a&$(>2;",F ZT$GT=$1%-*."$&%"$!MJKN$=NSM$'-+-B"&"+$<+/B$2&($;"<-A>&$0->A"$V/<$39$bKX,F GH!H$I>"**$A("($],2*1>A;"^$!MJKN$(&-&"B"*&$&/$>/-;$&%"$1/++"('/*;2*.$!MJKN$B/;">$<2>"$<+/B$&%"$]JK05@S/;">(^$</>;"+,
!""#$%&&'(#))*&+(,*-(-,./0)-+1%20")*-(-)1-(2,*&+(,*-(-,./0)3459444:764,';<-*;$%&&'(#))*&+(,*-(-,./0)-+1%20")*-(-)1-(2,*&+(,*-(-,./0)345844446c9,';<
May 2021SiC Resistor Modeling for IC Generation 13 9
N(&2B-&";$!MJKN$S/;">($</+$GH!H$I>"**$JK$I"*"+-&2/*$5@$Y"(2(&/+(
% !&'()*+,-#.*/,0*'(*1#232$,02*'45.6-347*!682$09$#*:,-;*:392*)//#5$
<=*>( ?+@A)B*1:,-;:392+,-#. C+@!*B)D)BEF*D%@EG<HF?IJF*K&EF?JLJ)GI*(ME=?N=N)G=*&:E<?OIJ*&P'EF?QJF*1!PEH?HHH)RH*ST++TEF?HH)GF<*1!EJQH<*1AEJQH<*M!EF?HH)G<=
QIH*>( ?+@A)B*1:,-;:392+,-#. C+@!*B)D)BEF*D%@EGFO<?FIL*K&EQ?<=O)GL*(MEL?HJJ)G=*&:E<?H=I*&P'EF?H<O*1!PEH?HHH)RH*ST++TEF?HH)GF<*1!EJJJ*1AEJJJ*M!EF?HH)G<=
=HH*>( ?+@A)B*1:,-;:392+,-#. C+@!*B)D)BEF*D%@EGFOH?Q<I*K&EJ?NHN)GL*(MEL?FLF)G=*&:EF?NLL*&P'EH?NON*1!PEH?HHH)RH*ST++TEF?HH)GF<*1!EJJJ*1AEJJJ*M!EF?HH)G<=
!"#$%&'$("#)&*+"&,-./01.,23&45.&"6*789: -""&(*8*&)7*88"+&)#;(")&<&=&>9: ?"+);$@AB&/C&8"7D@$#$EF&;)&@$8&F"8&"6G"+;'"@8*##F&;'G#"'"@8"(&$+&7D*+*78"+;H"(90;@;'I'&+");)8$+&%;(8D&(;'"@);$@&;)&A&J'9&0*6;'I'&+");)8$+&#"@E8D&(;'"@);$@&;)&K&''9
,6*'G#"&-L/C,&;@)8*@7"&8"68&#;@")&M$+&KN:)OI*+"&P8$GQ&*@(&K<:)OI*+"&PR$88$'Q&+");)8$+&#*F$I8)&("G;78"(&R"#$%S0TKN-U&LVW-@$(" ?--@$(" 0/4W-@$(" ?--@$(" T!$(F!;*)0$("# VXKNI&YXAI&1-XAKG&12XAKG0TK<-U&L@$(" ?--@$(" 0@$(" ?--@$(" T!$(F!;*)0$("# VXK<&YXA&1-XAKG&12XAKG
SiC Resistor Modeling for IC Generation 13 10May 2021
SiC Resistor Modeling for IC Generation 13 11
Example SPICE DC Simulation of SiC IC Resistor I-V Characteristics
U*CT!T*S.#44*<HG!V690#*!3( 1#232$,0*'D*!3W6.9$3,4*9$*QIH(*94-*D!!EG<=D?'C(BXA)*Y??Z'([FJ\+,-#.2Z'([FJ+,-#.2\QIH(\<HWW?$]$^+1<H!_*C\<*D22 S4- D22 1:,-;:392+,-#. `EF6*BE<H6*T!EF<a*TAEF<aDDAA*D-- S4- A(*<=DD1*C\F*S4- A(*HDD!!*S4- D22 A(*<=D'1*C\F*C\<*H[?&1'C%*A(*'1E'bD'1c?A(*DD1*'C(1*F*H*=H-;C +");)8$+&;)&'$("#"(&*)&
Z,.&%;8D&R$(F&R;*)&"MM"789
!2BA>-&2/*$"a-B'>"$</+$-$34F!dA-+"$Ue34fB$a$\e5AB$!2K +"(2(&/+$-&$=e764$bK,
45.,S&.D"&[+");)8$+\&Z,.&E*8"&*@(&R$(F]RI#^&8"+';@*#)&*+"&*#%*F)&7$@@"78"(&8$&?--&)IGG#F_
!MJKN$J*'A&$Z"1L$="a&
U!&'()*+,-#.2*/,0*CT!T*Md)%*'(*D#023,4*FJ*%ELJJ?H*K*bQIH?H*(c*94-*0E<H?H*WW*/0,W*e9/#0*5#4$#0??+@A)B*Md)%+,-#. C+@!*B)D)BEF*D%@EGL?N=H*K&E<?=QQ)GI*ST++TEH?LFIO*BT+:ATEH?H<HH*1!PEH?HHH)RH*(MEL?HJJ)G=*&:E<?H=I*(SA@EL?QON)GFH*(S!@EL?QON)GFH*M!EH?HH)RH*&P'EF?H<O*1AEILLN*1!EILLN?+@A)B*1!"##$+,-#. 1*1!PEF?<ON)RQ?+@A)B*1:,-;:392+,-#. C+@!*B)D)BEF*D%@EGFO<?FIL*K&EQ?<=O)GL*(MEL?HJJ)G=*&:E<?H=I*&P'EF?H<O1!PEH?HHH)RH*ST++TEF?HH)GF<*1!EJJJ*1AEJJJ*M!EF?HH)G<=?+@A)B*1!,605#'Wa.94$ 1*1!PEIHL?H
J*1>A;";$]JK05@S/;">(g764Kg34BB,&a&^$<2>"$V1/++"('/*;($&/$3*;$+/?$/<$&-D>"$2*$(>2;"$54X#
-7D"'*8;72;*E+*'
May 2021
SiC Resistor Modeling for IC Generation 13 12
Example SPICE Simulation of SiC IC Resistor I-V Characteristics!2BA>-&2/*$"a-B'>"$</+$-$34F!dA-+"$Ue34fB$a$\e5AB$!2K +"(2(&/+$-&$=e764$bK,
!MJKN$J*'A&$Z"1L$="a&
4$8"&8D"&)#;ED8&($%@%*+(&R"@(&;@&8D"&*R$`"&-L/C,:);'I#*8"(&/a?&G#$8&(I"&8$&)IR)8+*8"&R$(F&R;*)&"MM"789&
May 2021
U*CT!T*S.#44*<HG!V690#*!3( 1#232$,0*'D*!3W6.9$3,4*9$*QIH(*94-*D!!EG<=D?'C(BXA)*Y??Z'([FJ\+,-#.2Z'([FJ+,-#.2\QIH(\<HWW?$]$^+1<H!_*C\<*D22 S4- D22 1:,-;:392+,-#. `EF6*BE<H6*T!EF<a*TAEF<aDDAA*D-- S4- A(*<=DD1*C\F*S4- A(*HDD!!*S4- D22 A(*<=D'1*C\F*C\<*H[?&1'C%*A(*'1E'bD'1c?A(*DD1*'C(1*F*H*=H
-;C +");)8$+&;)&'$("#"(&*)&Z,.&%;8D&R$(F&R;*)&"MM"789
-7D"'*8;72;*E+*'
!"#$%&'(&"$)"*+&(*,'$-"."/"&*"0f#90.,47*=HH*>(*@a#09$3,49.*A#W,42$09$3,4*,/*XaG!59.#-*QPG!3(*Md)%*'4$#709$#-*(30563$2*b<HFOcg*T0$35.#g*"$$a2ghh4$02?4929?7,[h905"3[#h4929h5923?4$02?4929?7,[h<HFOHHHJJNF?a-/&0#2#4$9$3,4g*"$$a2ghh4$02?4929?7,[h905"3[#h4929h5923?4$02?4929?7,[h<HFNHHHFOO=?a-/
'45.623,4*,/*:,-;*:392*)//#5$*34*!&'()*+,-#.347*,/*QPG!3(*'4$#709$#-*(30563$*1#232$,02*b<HFOcg*T0$35.#g*"$$a2ghh4$02?4929?7,[h905"3[#h4929h5923?4$02?4929?7,[h<HFOHHHHI=L?a-/&,2$#0*&0#2#4$9$3,4g*"$$a2ghh4$02?4929?7,[h905"3[#h4929h5923?4$02?4929?7,[h<HFLHHHNQIH?a-/
d302$G@0-#0*!&'()*+,-#.347*,/*)]$0#W#G%#Wa#09$60#*QPG!3(*Md)%*'4$#709$#-*(30563$2*b<HFIcgT0$35.#g*"$$a2ghh4$02?4929?7,[h905"3[#h4929h5923?4$02?4929?7,[h<HFIHHFQOOI?a-/
)]a#03W#4$9.*94-*%"#,0#$359.*!$6-;*,/*QPG!3(*Md)%*%"0#2",.-*D,.$97#*:,-;*:392*)//#5$*/0,W*<= >(*$,*=HH*>(*b<HFIcgT0$35.#g*"$$a2ghh4$02?4929?7,[h905"3[#h4929h5923?4$02?4929?7,[h<HFIHHH=JHL?a-/
&0,5#22347*94-*("9095$#03i9$3,4*,/*%",6294-GP,60*=HH*>(*A6098.#*QPG!3(*Md)%*'4$#709$#-*(30563$2*b<HFIcg*T0$35.#g**"$$a2ghh4$02?4929?7,[h905"3[#h4929h5923?4$02?4929?7,[h<HFIHHFQOLN?a-/&0#2#4$9$3,4g*"$$a2ghh4$02?4929?7,[h905"3[#h4929h5923?4$02?4929?7,[h<HFLHHHFILQ?a-/
SiC Resistor Modeling for IC Generation 13 13May 2021