n-channel qfet mosfet - 4donline.ihs.com · on-region characteristics figure 2. transfer...

FQT7N10L

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQT7N10L UnitVDSS Drain-Source Voltage 100 VID Drain Current - Continuous (TC = 25°C) 1.7 A

- Continuous (TC = 70°C) 1.36 AIDM Drain Current - Pulsed (Note 1) 6.8 AVGSS Gate-Source Voltage ± 20 VEAS Single Pulsed Avalanche Energy (Note 2) 50 mJIAR Avalanche Current (Note 1) 1.7 AEAR Repetitive Avalanche Energy (Note 1) 0.2 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/nsPD Power Dissipation (TC = 25°C) 2.0 W

- Derate above 25°C 0.016 W/°CTJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,1/8" from case for 5 seconds

300 °C

Symbol Parameter Typ Max UnitRθJA Thermal Resistance, Junction-to-Ambient * -- 62.5 °C/W* When mounted on the minimum pad size recommended (PCB Mount)

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S

D

G

SOT-223G

D

S

FQT7N

10L N-C

hannel MO

SFET

DescriptionThis N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features• 1.7 A, 100 V, RDS(on)=350 mΩ(Max.) @VGS=10 V, ID=0.85 A

• Low Gate Charge (Typ. 5.8 nC)• Low Crss (Typ. 10 pF)• 100% Avalanche Tested

March 2013

N-Channel QFET® MOSFET 100 V, 1.7 A, 350 mΩ

©2001 Fairchild Semiconductor Corporation FQT7N10L Rev. C0

www.fairchildsemi.com

(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 26mH, IAS = 1.7A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Unit

Off CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 100 -- -- V∆BVDSS/ ∆TJ

Breakdown Voltage Temperature Coefficient

ID = 250 µA, Referenced to 25°C -- 0.1 -- V/°C

IDSS Zero Gate Voltage Drain CurrentVDS = 100 V, VGS = 0 V -- -- 1 µAVDS = 80 V, TC = 125°C -- -- 10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA

On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.0 -- 2.0 VRDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 0.85 AVGS = 5 V, ID = 0.85 A -- 0.275

0.3000.350.38 Ω

gFS Forward Transconductance VDS = 30 V, ID = 0.85 A -- 2.75 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 220 290 pFCoss Output Capacitance -- 55 72 pFCrss Reverse Transfer Capacitance -- 12 15 pF

Switching Characteristics td(on) Turn-On Delay Time VDD = 50 V, ID = 7.3 A,

RG = 25 Ω

-- 9 30 nstr Turn-On Rise Time -- 100 210 nstd(off) Turn-Off Delay Time -- 17 45 nstf Turn-Off Fall Time -- 50 110 nsQg Total Gate Charge VDS = 80 V, ID = 7.3 A,

VGS = 5 V

-- 4.6 6.0 nCQgs Gate-Source Charge -- 1.0 -- nCQgd Gate-Drain Charge -- 2.6 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 1.7 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.8 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.7 A -- -- 1.5 Vtrr Reverse Recovery Time VGS = 0 V, IS = 7.3 A,

dIF / dt = 100 A/µs

-- 70 -- nsQrr Reverse Recovery Charge -- 140 -- nC

FQT7N

10L N-C

hannel MO

SFET



0.2 0.4 0.6 0.8 1.0 1.2 1.410-1

100

25150※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test

I DR , R

ever

se D

rain

Curre

nt [A

]

VSD , Source-Drain Voltage [V]

0 2 4 6 8 1010-1

100

※ Notes :1. VDS = 30V2. 250μ s Pulse Test

-55

150

25

I D , D

rain

Curre

nt [A

]

VGS , Gate-Source Voltage [V]

0 1 2 3 4 5 6 7 80

2

4

6

8

10

12

VDS = 50V

VDS = 80V

※ Note : ID = 7.3 A

V GS, G

ate-

Sour

ce V

oltag

e [V

]

QG, Total Gate Charge [nC]10-1 100 1010

100

200

300

400

500

600Ciss = Cgs + Cgd (Cds = shorted)Coss = Cds + Cgd

Crss = Cgd

※ Notes :1. VGS = 0 V2. f = 1 MHz

Crss

Coss

Ciss

Capa

citan

ce [p

F]

VDS, Drain-Source Voltage [V]

0 5 10 15 200.0

0.3

0.6

0.9

1.2

1.5

VGS = 10V

VGS = 5V

※ Note : TJ = 25

RDS

(ON)

[Ω],

Drain

-Sou

rce

On-R

esist

ance

ID, Drain Current [A]

10-1 100 10110-1

100

VGSTop : 10.0 V

8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V

Bottom : 3.0 V

※ Notes :1. 250μ s Pulse Test2. TC = 25

I D, D

rain

Curre

nt [A

]


Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

FQT7N

10L N-C

hannel MO

SFET



-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :1. VGS = 10 V2. ID = 0.85 A

RDS

(ON)

, (No

rmali

zed)

Drain

-Sou

rce O

n-Re

sistan

ce

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

※ Notes :1. VGS = 0 V2. ID = 250 μA

BVDS

S, (

Norm

alize

d)Dr

ain-S

ource

Bre

akdo

wn V

oltag

e

TJ, Junction Temperature [oC]

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1 1 0 2 1 0 31 0 -1

1 0 0

1 0 1

1 0 2

※ N o te s : 1 . Z θ J C( t ) = 6 2 .5 /W M a x .

2 . D u ty F a c to r , D = t1/ t2 3 . T J M - T C = P D M * Z θ J C( t )

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Z θJC(t

), T

he

rma

l Re

spo

nse

t 1 , S q u a re W a v e P u ls e D u ra t io n [s e c ]

25 50 75 100 125 1500.0

0.4

0.8

1.2

1.6

2.0I D,

Dra

in Cu

rrent

[A]

TC, Case Temperature []10-1 100 101 102

10-2

10-1

100

101

100 ms

DC

10 ms1 ms

100 µs

Operation in This Area is Limited by R DS(on)

※ Notes :1. TC = 25 oC2. TJ = 150 oC3. Single Pulse

I D, D

rain

Curre

nt [A

]


Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature

Figure 7. Breakdown Voltage Variationvs. Temperature

Figure 8. On-Resistance Variationvs. Temperature

Figure 11. Transient Thermal Response Curve

t1

PDM

t2

FQT7N

10L N-C

hannel MO

SFET



Charge

VGS

5VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

5VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

5V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

5V

VDSRL

DUT

RG

VGS

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21EAS = L IAS

2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FQT7N

10L N-C

hannel MO

SFET



Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------

FQT7N

10L N-C

hannel MO

SFET



Package Dimensions

3.00 ±0.10

7.00

±0.

30

0.65

±0.

20

0.08

MA

X

3.50

±0.

20

1.60

±0.

20

(0.4

6)

(0.8

9)

(0.6

0)(0

.60)

1.75

±0.

20

0.70 ±0.10

4.60 ±0.25

6.50 ±0.20

(0.95) (0.95)

2.30 TYP

0.25

MAX1.80

0°~10°+0.10–0.05

0.06+0.04–0.02

SOT-223

FQT7N

10L N-C

hannel MO

SFET



FQT7N

10L N-C

hannel MO

SFET



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*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

2Cool™AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

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FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™

FPS™F-PFS™FRFET®

Global Power ResourceSM

Green Bridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver™OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost™TinyBuck™TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC®

TriFault Detect™TRUECURRENT®*μSerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I64

®

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