multi beam laser dicing technology for chip free wlcsp · multi beam laser dicing technology for...
TRANSCRIPT
Multi Beam Laser Dicing Technology
for Chip Free WLCSP
Peter Dijkstra
Director Sales, Service & Marketing
page 2
Markets & Technology
Technology Comparison
Laser Full cut
Dicing IC Low-K
Conditions
Results
Contents
ASM Pacific Technology Ltd. © 2016
page 3
Markets & Technology
ASM Pacific Technology Ltd. © 2016
IC
Logic Memory Micro Analog Optoelectronics Discrete SensorsGroove + Blade DBG – SDBG
Cool expansionGroove + Blade Blade Full cut or Scribe Blade Blade
Tod
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Tom
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page 4
Markets & Technology
ASM Pacific Technology Ltd. © 2016 CONFIDENTIAL
IC Logic Memory Micro Analog Optoelectronics Discrete Sensors
Groove + Blade DBG – SDBGCool expansion
Groove + Blade Blade Full cut or Scribe Blade Blade
MB Dicing
Thin Wafers< 200um
V-DOE
High Die Strength< 100um~500MPa
MB Dicing
Thin wafers< 200um
MB Dicing
Thin Wafers< 200um
Full cut or Scribe MB Dicing
Smaller Streets< 40um
MB Dicing
Techno enabler
Tod
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Tom
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Encapsulated Mold
Compound Packaging
page 6
Application Demo Laboratory
ASM Pacific Technology Ltd. @ 2016 CONFIDENTIAL
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2014 2015
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Dicing
Mold
Compound
page 7
Next Dicing Technology Candidate
ASM Pacific Technology Ltd. © 2016
Laser Grooving + Blade saw
Laser Full cut
Stealth Dicing
Plasma Dicing
page 8ASM Pacific Technology Ltd. © 2016
Technology Comparison
Confidential
Laser Full Cut Stealth Plasma
• Medium DIE Strength• Narrow Dicing kerf• Low machine Price• Low Running cost• Simple process flow• Full cut of DAF or FOW
• High DIE Strength• Narrow Dicing kerf• Strong sidewall structure
• High DIE strengthNarrow Dicing Kerf
• Recast (high power)Technology maturity
• High Machine price• metal -> from backside• Low-k -> Grooving• Poor DIE separation• Inconsistant Die to DIE
spacing at PnP• Incomplete cutting
• High Machine price• Metal -> not possible• Foundry level facility• High running cost (SF6, C4F8)
page 9ASM Pacific Technology Ltd. © 2016
Facts
Confidential
Parameter Laser Full Cut Stealth Plasma
Products Low-K No metal in street No metal in street
Die Strength Mid-High Mid-High High
Low-K quality Good Good Good
Si dust / Debris Few Few by DDS Free
Chipping Free Small topside at DDS Free
Cut street 15um 40% of wafer thickness 10um
Cutting DAF or FOW Yes Need DDS No
Water Required Free Free
Maturity Mass Production Mass Production Under development
Special Requirements Non Crystal orientationBreaking tool
No metal or TEG in streetPR strip - Mask for each design
Price (KUSD) 850 – 950 1300 – 1500(incl DDS)
2000 – 2500(excl stripper, PR, mask, etc)
Running cost Mid-Low Mid-High High
page 10
Zero mechanical stress, Chipping free dicing technology
Ultra low-K wafer & Extremely narrow saw street width supportable technology
Simplified & Innovative process sustaining cost reduction technology
Quality Capability Cost
Amkor Confidential
Amkor, What is Next Dicing Approach ?
page 11Amkor Confidential
Amkor, Candidates of Next Dicing Technology
Type LG + Blade dicing Laser full cut Stealth dicing Plasma dicing
Dicing processImage
Dicing method UV Laser + Bade UV Laser IR Laser Fluorine Plasma
Dicing speed Mid Mid-high Mid High
Die strength Mid Mid-high Mid-high High
Low-K quality Good Good Good Good
Running cost Mid Mid-low Mid-high High
Remark Mass Production Mass w/ thin die Mass w/ thin die Under Development
page 13
Debris
Vapor/plasma
metal
Oxide layer
doped region
back metallization
substrate
focusing lens
laser beam
protective coating
HAZ
Recast
Burr
Melt/Evaporation
Laser
ASM Pacific Technology Ltd. © 2016
page 15
Optics
Laser
DOE – Diffractive Optical Element
300mm
wafer Stage
Beams : 2 – 80 (or more)Distance : 10- 1000um
Patented Multi-Beam Laser
Active mounts for vibration compensation (IP propriety)
Technology Multi Beam Principle
ASM Pacific Technology Ltd. © 2016
page 18
Wafer Thickness vs. Technology
ASM Pacific Technology Ltd. © 2016
Grooving + Blade Multi Beam V-DOE
Wafer dia : 300 mm
DIE Pitch : 3300 x 3000um
Wafer Thickness (um) 100 – 800 100 – 300 < 100
Street width (um) 80 40 40
Thickness 800um 130um 60um
Kerf Width 60 um Groove 12 20
DIE Strength (Mpa) 550 280 520
UPH (wafer/hr) 2 3.5 2.5
page 19
Multi Beam Dicing
ASM Pacific Technology Ltd. © 2016
Active area
Street
#1 : Trenching #2 : Dicing pass
Active area
Crack sensitive,
transparent top layer
130 µm
page 22Amkor Confidential
Front view
12 µm
• Small Metal area
• No chipping
• No cracks
• No delamination
• Large Metal area
• No chipping
• No cracks
• No delamination
page 23Amkor Confidential
Backside view
12 µm
• Backside wafer - still on dicing tape
• No corner crack detected.
• Backside after removing tape
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HAZ – Heat Affected Zone < 2mm
ASM Pacific Technology Ltd. © 2015
L
FIB cross section is a good method to visualize the HAZ.
1.8 um
page 25
Summary
ASM Pacific Technology Ltd. © 2016
Process parameters• = 355 nm• Laser frequency: 100 kHz & 10 kHz
• DOE: 2UV75 & 8UV50
• Passes: 3
• Laser power [W]: 1 / 6.4 / 7.5
• Speed [mm/s]: 100, 160, 129
Results and benefits• Dicing width: 28 µm
• Kerf width: <10 µm
• Productivity: 3.5 wafers per hour
Conditions• Wafer material: Si
• Wafer diameter: 300mm
• Thickness: 130 µm
• Die pitch: 3300µm x 3000 µm
page 26
Zero mechanical stress, Chipping free dicing technology
Ultra low-K wafer & Extremely narrow saw street width supportable technology
Simplified & Innovative process sustaining cost reduction technology
Quality Capability Cost
Amkor Confidential
Conclusion
New Optimized Multi Beam laser Full cut for wafer thickness 100 – 300um with sensitive top layers
page 27ASM Pacific Technology Ltd. © 2016
Thank you ASM
Confidential
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