mrfe6vp61k25h, mrfe6vp61k25hs vhf digital...

MRFE6VP61K25H MRFE6VP61K25HS VHF Broadcast

1RF Reference Design DataFreescale Semiconductor

RF Power Reference Design Library

VHF Digital TV Broadcast Reference DesignHigh Ruggedness N--Channel Enhancement--ModeLateral MOSFETs

Reference Design CharacteristicsSolid--state broadcast transmitters require transistors that are broadband,

highly efficient and very rugged. There is also demand for transistors withhigher power capability to minimize device count and combining losses. Thisdocument describes the design and performance of a VHF DVB--T poweramplifier using the MRFE6VP61K25H LDMOS transistor.

• Frequency Band: 170--230 MHz

• Output Power: 225 Watts Avg. DVB--T

• Supply Voltage: 50 Vdc

• Power Gain (Typ): 25 dB

• Drain Efficiency (Typ): 30%

The MRFE6VP61K25H device is capable of 1250 watts CW operation andsuitable for high power applications between 1.8 and 600 MHz. The LDMOStechnology used is designed to operate at 50 volts, thereby increasing thepower capability per device and reducing the number of devices needed persystem. A temperature compensation circuit has been included in the amplifierdesign to keep the quiescent current stable over temperature.

VHF DIGITAL TV BROADCAST REFERENCE DESIGN

This reference design is designed to demonstrate the RFperformance characteristics of the MRFE6VP61K25H/HSdevices when applied to the 170--230 MHz VHF broadcastfrequency band. The reference design is tuned forperformance at 225 watts avg. output power, VDD = 50 voltsand IDQ = 2.0 A.

REFERENCE DESIGN LIBRARY TERMSAND CONDITIONS

Freescale is pleased to make this reference designavailable for your use in development and testing of your

own product or products. The reference design contains aneasy--to--copy, fully functional amplifier design. It consists of“no tune” distributed element matching circuits designed tobe as small as possible, and is designed to be used as a“building block” by our customers.

HEATSINKINGWhen operating this fixture it is critical that adequate heat-

sinking is provided for the device. Excessive heating of thedevice may prevent duplication of the included measurementsand/or destruction of the device.

Figure 1. VHF Broadcast Reference Design Fixture

Available at http://freescale.com/RFbroadcast> Design Support > Reference Designs

Rev. 0, 6/2011

Freescale SemiconductorTechnical Data

MRFE6VP61K25HMRFE6VP61K25HS

VHF Broadcast

170--230 MHz, 225 W AVG., 50 VVHF DIGITAL TV BROADCAST

REFERENCE DESIGN

RFOUTPUTRF

INPUT

M

VDDVGG

BIAS

-+

+-

VDD

VGG

M

M

M

BIAS

BIAS

BIAS

M = Match

© Freescale Semiconductor, Inc., 2011. All rights reserved.

2RF Reference Design Data

Freescale Semiconductor


MEASUREMENTS

SMALL SIGNAL

The amplifier is first measured with a small signal over alarge frequency range to verify that there are no resonancesor gain peaks due to the transistor matching or decouplingnetwork. The small signal measurement can be seen inFigure 2.

PULSED

Although the MRFE6VP61K25H device is capable of1250 watts CW operation, some of the matching components,e.g. capacitors used in this DVB--T amplifier, could be close to

or over their rated temperature at such high power. Thereforea pulsed signal is used to measure power, gain and efficiencyof the amplifier.

As shown in Figure 3, the P1dB is more than 1250 wattswith an IDQ of 150 mA. The results with IDQ = 2.0 A is shownin Figure 4.

The power capability and P1dB with a pulsed signal givesan indication of the average DVB--T power that the amplifieris capable of with a PAR above 8 dB (0.01% probability,CCDF) and a (non--corrected) shoulder distance below--30 dBc. A rough estimation is that the available DVB--Taverage power is about 7 dB below the pulsed P1dB power.

Gps,POWER

GAIN(dB)

40

50

30

20

30

10

0

--10

f, FREQUENCY (MHz)

Figure 2. Small Signal Characteristics

IRL(dB)

--40400

Gps

0

VDD = 50 VdcIDQ = 2.0 A

10

--10

20

--50150 2500 100 200 300 350

--20

--30

--20

--30

--40

IRL

Gps

Pout, OUTPUT POWER (WATTS) PULSED

Figure 3. Pulsed Power Gain and Drain Efficiencyversus Output Power

19

26

10

80

70

60

50

40

ηD,DRAINEFFICIENCY(%)

Gps,POWER

GAIN(dB) 24

30

23

22

21

VDD = 50 Vdc, IDQ = 150 mAPulse Width = 50 μsecDuty Cycle = 2.5%

20

25

20

200 MHz

170 MHz

ηD

170 MHz200 MHz

230 MHz

Gps

Pout, OUTPUT POWER (WATTS) PULSED

Figure 4. Pulsed Power Gain and Drain Efficiencyversus Output Power

22.5

26.5

0

80

70

60

50

40

ηD,DRAINEFFICIENCY(%)

Gps,POWER

GAIN(dB)

25.5

30

25

24.5

24

VDD = 50 Vdc, IDQ = 2.0 APulse Width = 50 μsecDuty Cycle = 2.5%

20

26 200 MHz

ηD

170 MHz

23

23.5

10

0 200 600 1000 1200 1800400 800 1400 1600

230 MHz

0 200 600 1000 1200 1800400 800 1400 1600

230 MHz170 MHz

200 MHz

230 MHz



DVB--T

A DVB--T signal with a 9.6 dB peak--to--average (PAR)ratio at 0.01% probability on CCDF was used to quantify thebroadband performance of the MRFE6VP61K25H deviceunder a digital modulation scheme. The circuit is air--cooledand the device bolted down to the heatsink with thermalgrease (Figure 1).

Figure 5 illustrates typical broadband performance at225 watts avg. DVB--T power. The PAR is above 8 dB acrossthe VHF band of 170--230 MHz with a 30% efficiency andgain of 25 dB.

The drive up data in Figures 6 and 7 shows that it isreasonable to use the device up to 250 watts avg. DVB--Tpower and still have a PAR above 8 and shoulder distancebelow --30 dBc. This is in line with the rough estimation thatthe average DVB--T power is about 7 dB below the pulsedP1dB. The shoulder distance is measured using delta

marker at ±4.2 MHz offset.The device can be used at lower supply voltage for lower

output power or to optimize the tradeoff between linearity andefficiency. Decreasing the supply voltage will improveefficiency and decrease the linearity.

10

180

9.5

9

40

30

25

27

f, FREQUENCY (MHz)

Figure 5. DVB--T Peak--to--Average Ratio, Power Gain andDrain Efficiency versus Frequency

ηD

,DRAIN

EFFICIENCY(%)

ηD

6230

Gps

8

8.5

7.5

35

26

23190 200170 210 220

7

6.5

25

24VDD = 50 VdcIDQ = 2.0 APout = 225 W Avg. DVB--T

PAR

PAR(dB)

Gps,POWER

GAIN(dB)

10

170

9

8.5

60

50

45

40

Pout, OUTPUT POWER (WATTS) DVB--T AVG.

Figure 6. DVB--T Peak--to--Average Ratio andDrain Efficiency versus Output Power

ηD

,DRAINEFFICIENCY(%)

ηD

250

7.5

8

7

55

35

20190 210150 230

6.5

6

30

25


PAR

9.5230 MHz

170 MHz

200 MHz

230 MHz

170 MHz

200 MHz

--20

170

--24

--26

Pout, OUTPUT POWER (WATTS) DVB--T AVG.

Figure 7. Power Sweep DVB--T SignalFrequency @ 200 MHz

SHOULDER

(dBc)

250

--30

--28

--32

190 210150 230

--34

--40

--22

--36

--38

160 180 200 220 240

+4.2 MHz

--4.2 MHz

PAR(dB)




AMPLIFIER DESIGN

MATCHING NETWORK

The first element in the output matching is a LC networkmade of microstrip lines and capacitors. The LC section isfollowed by a 4:1 coaxial transformer. The impedance of thecoaxial cable is 25 Ω, which is the optimum impedance for atransformation from 12.5 to 50 Ω, following the equation

Z = Zin× Zout .

A 1:1 balun made of a 50 Ω coaxial cable together withcapacitors are finalizing the matching network to 50 Ω at theoutput of the demo board.

Due to the relatively high power of the amplifier, severalcapacitors were used in parallel instead of using only one. Byusing multiple capacitors, the total ESR (Equivalent SeriesResistance) will be lower which improves the currenthandling capability.

A printed circuit board (PCB) with high thermalconductivity was also selected to improve the thermalcapability of the amplifier and reduce the temperature of thecomponents used in the matching network.

The input matching network is made in a similar way.Simulation software was used to get a first approach of thevalues needed and to understand the impact of eachmatching element.

In addition to the matching network, the decoupling circuitsfor gate and drain bias supply needs to be carefullydesigned. Small signal measurement and a low frequencyprobe was used to verify that the decoupling was adequateand without resonances.

A nonlinear electro--thermal transistor model for theMRFE6VP61K25H transistor is available for customers tooptimize their design. The model is available online fromFreescale’s RF High Power Model Library athttp://freescale.com/rf/models. Supported CAD tools includeAgilent EEsof’s ADS and Microwave OfficeR from AWRCorporation.

TEMPERATURE COMPENSATED BIAS CIRCUIT

Temperature Coefficient of the TransistorThe RF performance of a power amplifier depends on the

quiescent current, IDQ. For a fixed gate bias voltage, VGS, theIDQ increases with temperature. A thermal tracking circuit isintroduced to compensate for the quiescent current variationversus temperature. Figure 13 shows the PCB layout withcomponents for the amplifier including the thermal trackingcircuit.

The tracking circuit is using a voltage regulator (U1) toprovide a stable +5 volts.(1) A resistor network including apotentiometer (R7) sets VGS to the desired IDQ. The resistorvalues are selected to have a tuning range for the VGS to bebetween 1.1 and 3.2 volts, hence covering both Class ABand Class C operation.

The bipolar NPN transistor (Q1) is used as a thermaltracking device. If the current through the transistor Q1 is

kept constant, the base--emitter voltage decreases withincreasing temperature. The temperature coefficient of thetransistor (Q1) depends on the collector current, IC, and canbe found in the data sheet for Q1. For IC = 4 mA, thetemperature coefficient is around --2.1 mV/°C. This reductionin voltage is used to compensate for the increase in IDQ ofthe LDMOS device due to temperature.

The temperature coefficient for the MRFE6VP61K25Hwas measured using a heat and cooling plate. The VHFamplifier with its copper heatsink was placed on the plateand the temperature varied between 0°C and 100°C. Thetemperature was measured close to the transistor. The gatevoltage was adjusted to keep the quiescent current constantover temperature. The measurement was done for quiescentcurrents of 150 mA, 1.0 A and 2.0 A. The results are plottedin Figure 9. To keep the IDQ constant at 2.0 A, the gatevoltage needs to be reduced with 2.1 mV/°C.

The temperature coefficient of the device is depending onthe bias point, which explains the difference in thermalcoefficient for IDQ = 150 mA (--2.4 mV/°C), IDQ = 1.0 A(--2.3 mV/°C) and IDQ = 2.0 A (--2.1 mV/°C).(2)

The next step is to measure the thermal compensationcircuit when the temperature is varied between 0°C and100°C. The temperature coefficient for the compensationcircuit is --2.1 mV/°C. As can be seen in Figure 10, the circuitcompensates well the thermal coefficient of the LDMOSdevice.

Figure 11 shows the behavior for the amplifier with thetemperature compensation circuit. The temperature variationis less than 5% between 25°C and 115°C.

FIXTURE IMPEDANCE

VDD = 50 Vdc, IDQ = 2.0 A, Pout = 225 W Avg. DVB--T

fMHz

ZsourceΩ

ZloadΩ

170 1.1 + j4.5 2.7 -- j0.2

200 2.1 + j5.1 2.2 + j1.1

230 1.6 + j4.1 2.1 + j2.1

Zsource = Test circuit impedance as measured fromgate to gate, balanced configuration.

Zload = Test circuit impedance as measured fromdrain to drain, balanced configuration.

Figure 8. Series Equivalent Source and LoadImpedance

OutputMatchingNetwork

InputMatchingNetwork

Zsource Z load

DeviceUnderTest

--

-- +

+



TEMPERATURE COMPENSATED BIAS CIRCUIT

2.1

2.8

0

2.6

2.4

TEMPERATURE (°C)

Figure 9. VGS versus Temperature to keep IDQ Constant

2.2

20 40 60 80 100

V GS(V)

IDQ = 2.0 A

2.7

2.5

2.3

2.45

2.75

0

2.55

TEMPERATURE (°C)

Figure 10. Temperature Compensation Circuitversus VGS to keep IDQ = 2.0 A

20 60

V GS(V)

2.7

2.65

2.5

10040 80

2.6

1.0 A

150 mA

VGS to keep IDQ = 2.0 A

Compensation Circuit


1.8

2.5

20

2.1

TEMPERATURE (°C)

Figure 11. IDQ Drift with Temperature CompensationCircuit

60

I DQ(A)

2.4

2.3

2.0

12040 80

2.2

VDD = 50 VdcVGS = 2.65 V

1.9

100




CIRCUIT DESCRIPTION

Figure 12. VHF Broadcast Reference Design Schematic Diagram

C33 C34 C35 C36 C37 C38VDD

L2

COAX4

COAX5

C16

C17

C18

C19

C20

C21

C22

C23 C24

C25C26C27

C28

C29C30C31

C32

COAX6

RFOUTPUT

C9

C1 C4

VGSU1

R3 C2

R4 R7

R5

R6

R2

R1

C3 C5 C6 C7

R8

Q1

L1

RFINPUT

C8

COAX1

C10

C11

COAX2

COAX3

C12C13

C14

C15

L3



Figure 13. VHF Broadcast Reference Design Component Layout

CU

TO

UT

AR

EA

MRFE6VP61K25H_VHF

C3 R7

C6

C5

R8 R1

R5 R3

R6

R2Q1

U1

C4

C2

R4

C7

C1

COAX1

COAX2

COAX3

L1

L3

C8C9

C10

C13 C12

C15

C14C11

C37 C38

VDS

C35 C36

C34

C33

L2C16*

C18*

C17*

C21

C24*

COAX5

COAX4

C19

C23*

COAX6

C20

C22

VGS

C25*

C26* C27*C28*

C31*

C32*

*C16, C17, C18, C23, C24, C25, C26, C27, C28, C29, C30, C31, C32 are mounted vertically.

C29*

C30*

Rev. 1

Table 1. VHF Broadcast Reference Design Component Designations and ValuesPart Description Part Number Manufacturer

C1 2.2 μF, 100 V Chip Capacitor HMK432B7225KM--T Taiyo Yuden

C2, C12, C13, C14, C15 1 μF Chip Capacitors GRM21BR71H105KA12L Murata

C3 10 nF Chip Capacitor C0805C103J5RAC--TU Kemet

C4 220 μF, 63 V Electrolytic Capacitor 227CKS050M Illinois Capacitor

C5 100 nF Chip Capacitor CDR33BX104AKWS Kemet

C6, C25, C26, C27, C28,C29, C30, C31, C32, C33

1000 pF Chip Capacitors ATC800B102JT50XT ATC

C7 2.2 μF, 50 V Chip Capacitor C3225X7R1H225KT TDK

C8 22 pF Chip Capacitor ATC800B220JT500XT ATC

C9, C10 5.1 nF Chip Capacitors ATC700B512JT50XT ATC


C16, C17 39 pF Chip Capacitors ATC800B390JT500XT ATC


C19, C22 1 μF Chip Capacitors GRM32CR72A105KA35L Murata

C20, C21, C36 2.2 μF Chip Capacitors HMK432B7225KM--T Taiyo Yuden

C23, C24 8.2 pF Chip Capacitors ATC800B8R2CT500XT ATC

C34 10 nF Chip Capacitor ATC200B103MT50XT ATC

C35 100 nF Chip Capacitor C1812F104K1RAC Kemet

C37, C38 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp

L1 10 Turns, #22 AWG Magnetic Wire 8077 Belden

L2 10 Turns, #16 AWG Magnetic Wire 8074 Belden

L3 2.5 nH Inductor A01TKL Coilcraft

(continued)




Table 1. VHF Broadcast Reference Design Component Designations and Values (continued)Part Description Part Number Manufacturer

R1 2.2 kΩ, 1/8 W Chip Resistor CRCW08052K20FKEA Vishay

R2 1.2 kΩ, 1/8 W Chip Resistor CRCW08051K20FKEA Vishay

R3 10 Ω, 1/8 W Chip Resistor CRCW080510R0FKEA Vishay

R4 1 kΩ, 1/8 W Chip Resistor CRCW08051K00FKEA Vishay

R5 3.9 kΩ, 1/8 W Chip Resistor CRCW08053R90FKEA Vishay

R6 200 Ω, 1/8 W Chip Resistor CRCW0805200RFKEA Vishay

R7 5 kΩ Potentiometer CMS Cermet Multi--turn 3224W--1--502E Bourns

R8 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay

Q1 Bipolar NPN Transistor BC847ALT1G On--Semiconductor

U1 Voltage Regulator LP2951ACDMR2G On--Semiconductor

Coax1 50 Ω, 5.11″ RG--316 Micro--Coax

Coax2, Coax3 24 Ω, 2.75″ TC--24 RF Power Systems

Coax4, Coax5 25 Ω, Semi Rigid RF Cable, .118″ Line, 2.56″ length. UT141--25 Micro--Coax

Coax6 50 Ω, 4.72″ EC141--50 Quickform/Hand Formable NEXANS

PCB* 0.030″, εr = 3.5 TC350 Arlon

Heatsink NI--1230 Copper Heatsink C193X280T970 Machine Shop

*PCB artwork for this reference design is available at http://freescale.com/RFbroadcast > Design Support > Reference Designs.

FREESCALE RF POWER 50 V TECHNICAL ADVANTAGES

ENHANCED VHV6

The MRFE6VP61K25H is fabricated using Freescale’ssixth--generation, very high voltage 50 V LDMOS processtechnology with enhanced ruggedness (VHV6E). The VHV6technology was introduced by Freescale several years agoand was a breakthrough for high power devices used forbroadcast and other applications like industrial, scientific andmedical (ISM) and commercial aerospace, where high powerdensity is required. The high power capability per deviceallows the MRFE6VP61K25H to reach more than 1.25 kWpeak power over the entire VHF band. The VHV6Etechnology is a further development of the VHV6 technologywith improved ruggedness.

RUGGEDNESS

Ruggedness, the ability of the transistor to withstandsevere load mismatch conditions under high output powerwithout device failure or degradation in device performance,is a very important parameter when designing a broadcastamplifier. Although the matching circuit plays a role indetermining the ruggedness of the amplifier, the intrinsicLDMOS ruggedness of the device is the foundation for theoverall amplifier ruggedness.

The ruggedness failure of the MOSFET is the result of adrain breakdown (impact ionization) event. As described in

Freescale’s 50 V RF LDMOS White Paper, there are threeruggedness failure mechanisms that can occur as a result ofa drain impact ionization event.(3) The first two mechanismsinvolve the basic breakdown of the MOSFET drain junction,either laterally across the channel or vertically across thedrain to source junction isolation. The third mechanism istriggered by an impact ionization event and is the self biasing“snapback” of the parasitic bipolar device.

The MRFE6VP61K25H device has been designed toaddress the three failure mechanisms resulting in extremelyrugged devices. The MRFE6VP61K25H is capable ofhandling a load mismatch of 65:1 VSWR @ 50 Vdc.

RELIABILITY

In addition to ruggedness, the MRFE6VP61K25Htransistor has been developed to meet quality and reliabilitystandards demanded by transmitter manufacturers andoperators. There is an MTTF (Median--Time--To--Failure)calculator(4) available to assist the customers in estimatingthe MRFE6VP61K25H device reliability in terms ofelectromigration wear--out mechanism. The MTTF is morethan 1000 years when operated at VDS = 50 V, Pout = 1250 WCW, efficiency = 75%, Tcase = 63°C and TJ = 128°C.

The device is qualified for a maximum operating junctiontemperature, TJ, of 225°C.



Operational reliability is also an important aspect of designas reflected in stability of the device performance over itslifetime. All MOSFETs suffer from degradation due to hotcarrier injection (HCI). In the case of NMOS FETs, highenergy electrons are generated due to high electric fieldsnear the drain corner of the gate. These “hot” carriers can beinjected and trapped in the nearby oxide layers over time andimpact device performance such as threshold voltage. A shiftin threshold voltage will decrease the quiescent current (IDQ)and alter the RF performance. Several device designinnovations have been incorporated into the 50 volt VHV6platform to result in IDQ drift for the MRFE6VP61K25H of lessthan 5% over 20 years.

ESD PROTECTION

The MRFE6VP61K25H device incorporates enhancedprotection against electrostatic discharge (ESD), whichmakes it less susceptible to damage during handling andmanufacturing. As shown in Figure 14, the enhanced ESDprotection also increases the maximum rating for theGate--Source Voltage to --6.0 to +10 Vdc, which in turn allowsa greater negative voltage swing without turning on the ESDstructure. One example where this feature is very beneficialis Class C operation at high input RF power levels.

Figure 14. Gate Voltage Breakdown with ESD

2.E--02

0.E+00

--2.E--02

--1.E--02

--5.E--03

5.E--03

1.E--02

--15 0--10 --5 5 10 15 20 25VGS (V)

I ESD(A)

Enhanced ESD

2.E--02

0.E+00

--2.E--02

--1.E--02

--5.E--03

5.E--03

1.E--02

--15 0--10 --5 5 10 15 20 25VGS (V)

I ESD(A)

Standard ESD

THERMAL BEHAVIOR

THERMAL RESISTANCE

Accurate thermal characterization of the RF powertransistor as well as the circuit components is necessary toanalyze the reliability of the system in which the device isused. To calculate the junction--to--case thermal resistance(RθJC), the maximum die surface temperature (TJ) duringamplifier operation, the case temperature (TC) and thedissipated power (Pdiss) must be known.

Total dissipated power is calculated as:

Pdiss = [RF input power + DC power (ID*VD)]-- (RF output power + RF reflected power)

Junction--to--case thermal resistance is calculated as:

RθJC = (TJ--TC)/Pdiss

The maximum die surface temperature, TJ, of the device ismeasured with infrared (IR) microscopy, and a thermocoupleelement is used to measure the case temperature, TC.

The thermal resistance of the MRFE6VP61K25Hmeasured under CW signal:

Tcase = 63°C, Pout = 1250 W CW, RθJC = 0.15°C/W

The thermal resistance, RθJC, depends on both testcondition and method. The thermal measurement

methodology used by Freescale is described in FreescaleApplication Note AN1955, Thermal MeasurementMethodology of RF Power Amplifiers.(5)

REFLOW MOUNTING

All RF performance data in this reference designdocument is taken with an air cooled copper heatsink and thedevice bolted down using a clamp and thermal grease asinterface material. Reflow mounting, i.e. the device solderedto the heatsink, can be used to lower the overall thermalresistance which reduces the junction temperature andimproves RF performance and reliability. For Si--baseddevices, each 15°C to 20°C reduction in junctiontemperature typically results in a doubling of the MTTF.Reflow mounting also improves the electrical contact. Propergrounding makes the power amplifier less susceptible tooscillation type damage.

The MRFE6VP61K25HS is a version of the transistor withan earless package for optimal reflow mounting.

More information can be found in Freescale ApplicationNote AN1908, Solder Reflow Attach Method for High PowerRF Devices in Air Cavity Packages.(6)

CONCLUSION

The design and performance of a VHF DVB--T poweramplifier using the MRFE6VP61K25H has been presented.The MRFE6VP61K25H is a 1250 watt device fabricatedusing Freescale’s sixth--generation VHV6E 50 V LDMOSprocess technology. Under a DVB--T signal using OFDMmodulation, the MRFE6VP61K25H achieves 225 watts avg.power at --30 dBc shoulder performance (±4.2 MHz offset)

with 30% efficiency and 25 dB gain across the VHF band of170 to 230 MHz. In addition to very good RF performance,the transistor is also designed for excellent ruggedness andreliability. A thermal compensation circuit is included in theamplifier design to keep the quiescent current constant overtemperature.




REFERENCES

1. “RF LDMOS Power Modules for GSM Base StationApplication: Optimum Biasing Circuit.” (DocumentNumber: AN1643) Application Note, 1998.

2. O. Lembeye and J. C. Nanan, “Effect of Temperature onHigh Power RF LDMOS Transistors,” Applied Microwave& Wireless (2002).

3. 50 V RF LDMOS White Paper: “An Ideal RF PowerTechnology for ISM, Broadcast and Radar Applications”.Ref. 50VRFLDMOSWP. Avai lable athttp://freescale.com/RFpower.

4. MRFE6VP61K25H MTTF calculator avai lable athttp://freescale.com/RFpower > Software & Tools >Development Tools > Simulat ions and Models >Calculators. Enter the “part number” into the Search fieldfor quickest results.

5. “Thermal Measurement Methodology of RF PowerAmplifiers.” (Document Number: AN1955) ApplicationNote, 2004.

6. “Solder Reflow Attach Method for High Power RFDevices in Air Cavity Packages.” (Document Number:AN1908) Application Note, 2011.

Technical documentation, including data sheets and application notes, for Freescale RF Power product can be found at:http://freescale.com/RFpower. Enter the applicable Document Number into “Keyword” search for quickest results.



APPENDIX A

Copper Heatsink for VHF Broadcast Fixture

A

2.737 (69.51) 0.41 (10.41)

D

DA

1.813 (46.04)

0.813 (20.64)

0.140 (3.56)

0.125 (3.17)

0.00(0.00)

0.177(4.50)

0.929(23.59)

1.558(39.58)

1.724(43.78)

2.134(54.19)

2.283(57.98)

2.929(74.38)

4.499(114.28)

4.725(120.02)

E

F

F

E1.929(48.98)

DA

AD

B

4.548(115.52)

2.882 (73.19)

2.719 (69.07)

2.011 (51.08)

0.611 (15.52)

0.130 (3.32)

AA

D

D

A

A

B1.309 (33.26)

1.668 (42.38)1.489 (37.83)

1.129 (28.69)0.950 (24.14)

∅0.188 (∅4.76)

0.000 (0.00)

0.000(0.00)

0.128(3.25)

0.324(8.23)

0.038 (0.97)

1.929(48.99)

C, Device Channel

E E

0.929(23.59)

2.929(74.39)

Gutter is 0.030 wideand 0.046 deep, bothsides

0 (0.00)

0.300 (7.62)

0.720 (18.29)

B

0.000(0.00)

inches (mm)

8x#4--40

0.300″ deep

0.720″ Copper Heatsink Hole Details

Designators Details

A 2 places, both sides, drill and tap, #2--56 screw depth 0.300″

B 2 places, both sides, 0.1875″ diameter notch 0.020″ deep

C NI--1230 channel 0.410″ wide by 0.0380″ deep

D 2 places, both sides, drill depth 0.250″ and tap for #4--40 screw

E Locator holes from bottom diameter = 0.257″, depth = 0.400″

F 2 places, drill through and tap for #4--40 screw

Figure 15. NI--1230 Heatsink




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