micro mechatronics 1nefr0001/ensmmlessonsfjn/... · micro mechatronics 1 part 7: bonding...
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Micro mechatronics 1part 7: bonding
HalbleiterkontaktierungDie- and wirebonding
Prof. Fritz J. NeffDirector of the Laboratory for Micro mechatronics and Hybrid integrated thick film circuitSat the University of AppliedSciences Karlsruhe (FH), 16. August 2004
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 2
Definition BondingBonding is the electrical or mechanical connectionbetween the pads of a semiconductor and those of the substrateDie bonding is the mechanical connection betweena semiconductor with the substrateWire bonding is the electrical connection betweenthe semiconductor and the substrateFlip-chip-bonding is the only bonding technology which allows same time in one step to realize themechanical and the electrical connection between a semiconductor and the substrate
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 3
Use of bare dies
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 4
Parameter: thick film metalisation
AgPd- and AgPt-films are fit forbonding withAl-wire with d > 150 µm
Au-films are fit for bonding withAlSi1- and Au-wire d < 50 µm
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 5
Parameter: surface profile
Influences of the pad surface to the bond:
- peak-to-valley-hight,- adhesion of printed film/layer,- thickness of metallisation,- homogenity of layer,- impurities in the layer (killing particles!),- components of the paste like organic binder,
yield of metall and frit
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 6
Parameter: composition of printed film
Less organic binder means higher yield of metal and therefor low values of peak-to-valley-hight
Repeating of the fireing process will cause better surface
Very thin film contain less organic binderand therefor better surface.
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 7
Parameter: intermetallic connections
Homogenious connections will not cause anyproblemsHeterogenious connections are causing migrationof particles and therefor the formation of intermetallic connections.
Aluminium - Wedge - Bond
AuAl2
Au - Schicht
Substrat
Au Al5 2
Kirkendall - Voids
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 8
Parameter: intermetallic connections
thermal and mechanical stability over long time of use only is possible by homogenious connections[Au/Au oder Al/Al]but:most used Au/Cu- or Au/Al-connections and
therefor the result areintermetallic connection,
problems are causing the Kirkendall-Voids; holeswhich are formating because of different diffusionconstants of the different materials
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 9
Diebonding with glueing
most used technology to connect the rear side of the die/chip with the prepared diepad on thesubstrate; the advantage is also to compensaterelative elongations between the different materials with help of the elasticity of the glue.
Elektrisch leitenderZwei-Komponenten-Klebstoff
Die
BondpadDiepadKeramiksubstrat
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 10
Diebonding
Die bonder inLaminar flow box
class100
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 11
Die BondingLow pressuregripperoverhead thesubstrate
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 12
Pad surfaces
aluminiumgold copper
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 13
Wire bonds
Ball-wedge-bonding (left)with Au-wire
Wedge-wedge-bonding (rigth)with Au- or Al-wire
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 14
Wire bonding
Thermo compression bonding, TC(Temperature T and bond force N) withAu-Draht
Thermo sonic bonding, TS (Temperature T,bond force N and ultra sonic US)with Au- (Cu-, Pd-) wire
Ultra sonic bonding, US (Ultra sonic US and bond force N) with Al- (Au-) wire
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 15
Micro-friction solderingby ultra sonic power
one of the two friction partners have to have a higher plasticity (wire)
the surfaces of the partners should not becontaminated or oxidated
the force/energy of friction soldering is higherthan the linkage force and therefor result an approach of the two different lattice and so several new local connections
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 16
Ball-wedge-bonding
Thermosonic bondingfor only gold wires
diameters 25 µm - 32 µm
Capillary tubeGold wire
Wire grip
Wedge-bonding point
Ball-bonding point
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 17
Ballbond and tool
thermal energyand
nominal forceand
ultra sonic energyresult in
friction and plasticflow of the wire
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 18
Ball-Wedge-BondingBond parameters for dAu = 25 µm
Substrate temperature: ≤ 150°Cnominal force: 300....1000mNultra sonic energy: 0,1......1Wsoldering time: 40.......60ms
each new combination of materials and tools will cause new parameter values!
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 19
Ball-Wedge-Bonding sequence
El. dischargeto form the ball
Loop forming
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 20
Ideal Ball-Wedge-Bonds
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 21
Ball-wedge-bonding
Ball-wedge-bonderin LMHS
in theLaminar Flow Box
class 100
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 22
Wafer Bumping= FCB-preparation
tchnologies forwafer bumpingPrinting of solderby- stencil or- stamp printingBall bumping by- ball bonder
LM 324
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 23
Ball-Wedge-Bonding
ball bondson LM324
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 24
Wedge-Wedge-Bonding
Ultra sonic bondingfor AlSi1-wires;diameters 25µm - 32µm
Wedge-tool Wire grip
Al-wire
First wedge bond
Scond wedge bond
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 25
Wedge-bonding tool
nominal force andultra sonic energy result in friction and plastic flow of the wire material
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 26
Bond tools and materials
For Al-wires, tools made of tungsten carbideFor gold wires, tools made of titanium carbide orosmide.
30°
60°
45°
a.) b.) c.)
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 27
Wedge-Wedge-BondingBond parameters for dAlSi1 = 25µm
Substrate temperature: ~ 20°Cnominal force: 25 ...40 cNultra sonic energy: 0,5 ...1 Wsoldering time: 30....50 ms
each new combination of materialsand tools will cause new parametervalues!
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 28
sequence of wedge-wedge-bonding
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 29
perfect wedge-wedge-bonds
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 30
Wedge-Wedge-Bonding
Wedge-Wedge-Bonderin LMHS
inLaminar Flow Box
class 100
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 31
Wedge-bond on die bond-pad
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 32
Materials for wires
goldaluminiumpalladium
copper
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 33
Physikal properties of wire materialsPhys. properties Dimension Au
99,99Cu Pd Al 99,99 AlMg0,5 AlSi1
Melting point °C 1063 1083 1554 660 650 -659
655 -660
Elasticity module kN/mm² 78 126 121 71 69 66
Shearing module kN/mm² 28 38 50 27 27 27
therm. conductivity at 20°C
W/mK 312 390 75 230 198 195
therm. Expansion coefficient
10-6K-1 15,3 17,6 11,5 25,3 25,1 25
El. resistance Ωmm²/m 0,022 0,017
0,099
0,029 0,03 0,03
therm. resistancecoefficient
10-3K-1 3,72 4,07 3,97 4,14 3,98 3,95
Length resistance at 25µm and 20°C
Ω/m 44,8 34,6 201,7
57,073 61,2 61,15
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 34
Gold wires
used for bei- US-Ball-Bonding,- US-Ball-Bumping,- TS-Wedge-Wedge-Bondingwire diameters7,5µm < d < 100µm, Standard 25µm and 32µm
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 35
Gold wiresrequirements:- minimale hardness and hardness
increase- free of oxide- chemical inerteimportant features:- max tension force- max elongationcomponents of the alloy:- Y, Fe, Cu, Ag,...with < (0,01-0,02)%
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 36
Gold wires
Important is therecristallisation
important therefor theused alloy- increase of tension- increase of elongation.
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 37
Aluminium wiresused for- US-wedge-wedge-bonding,wire diameters- thin wires 7,5µm < d < 100µm,
alloy of AlSi1 or AlMg0,5Standard 25µm and 32µm
- thick wires 100µm < d < 500µm (pure Al)
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 38
Aluminium wiresrequirements:- minimale hardness and hardness
increase- free of oxide- chemical inerteimportant features:- tension- elongationcomponents of the alloy:- Si, Mg
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 39
Aluminium wiresAlSi1 Al
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 40
Length of bonding wire
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 41
Problems with increaseof packing density
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 42
Resistance of Bonding wires
d = diameter of wireσ = el. resistancelges = length
[ ]Ω∗
=d
lR gesges σ1
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 43
Induktivity of bonding wires
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 44
Induktivitybetweenparallelbondingwires
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 45
Flip-Chip-Bonding
4 circuits on same 2“ x 2“ –Al2O3-Substrate,LM 324 is prepared with Au-ball-bumpsfor flip-chip-bonding.
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 46
Au-Ball-Bumping
1. Au-ball- as result of el. discharge2. Au-ball-bumping steps
1
2
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 47
Au-Ball-forms
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 48
•Printing of Ni/Au Bumps on the wafer(UBM Under Bump Metalisation)
•Printing of solder paste
•Melting of solder paste (Reflow)
•Washing of the wafer
Wafer Bumbing (Pac Tech)
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 49
Flip Chip Bonding with LM324 amplifier
• dimensions: 65 Mil x 62 Mil, ca. 1625 µm * 1550 µm • max. temperature: 150°C
• thickness of chip/die: 15 Mil
• Bonding Pads : 4 x 4 Mil
• Tolerance : ± 10%
1 Mil = 25 µm
Important values
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 50
LM324 without and with Au-Bumps
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Prof. Fritz J. Neff, Steinbeis TZ Mechatronik-Karlsruhe 51
Flip-Chip-Bonding
die positioningwith help of image treatment by 2 cameras