memsmto darpa piezoelectric mems resonator measurement and characterization april 6, 2004 joung-mo...
TRANSCRIPT
![Page 1: MEMSMTO DARPA Piezoelectric MEMS Resonator Measurement and Characterization April 6, 2004 Joung-Mo Kang, David Carter, Doug White, and Amy Duwel The Charles](https://reader036.vdocuments.site/reader036/viewer/2022081515/56649ee75503460f94bf7cb3/html5/thumbnails/1.jpg)
MEMSMTODARPADARPA
Piezoelectric MEMS Resonator Measurement and Characterization
April 6, 2004
Joung-Mo Kang, David Carter, Doug White, and Amy DuwelThe Charles Stark Draper Laboratory
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MEMSMTODARPADARPA
Presentation Overview
1. Background and device models
2. Filter design
3. L-Bar measurements
4. Parasitic investigations
5. Conclusion
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MEMSMTODARPADARPA
Device Overview and Goals
Desired: a high performance RF channel-select filter bank on a chip — 0.3-3 GHz frequencies — high selectivity high Q— compatible with silicon IC technologies— small size high density— low loss— device characteristics defined by lateral geometry
18 x 5.5 m bar with 3.5 m tethers10 x 5 m bar with 1 m tethers
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MEMSMTODARPADARPA
Device Structure
resonator
Ctethers
Circuit Model
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MEMSMTODARPADARPA
Longitudinal Resonance
Longitudinal Mode Shape• tethers placed at displacement node
• longitudinal displacement amplitude on the order of nm
• other types of mechanical resonances cancel out in charge at lower frequencies
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MEMSMTODARPADARPA
Butterworth Van-Dyke Model
MEMSMTODARPADARPA
R C L
C0
wlC z
t0
28we
ltL
2
28
tc
lweC
28we
c
Q
tR
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MEMSMTODARPADARPA
BVD Impedance Function
860 865 870 875 880 885 890 895 900 905 91010
2
104
106
108
Impe
danc
e M
agni
tude
(
)
860 865 870 875 880 885 890 895 900 905 910-90
-45
0
45
90
Impe
danc
e P
hase
(de
gree
s)
l = 5.5 m
w = 3.0 m
t = 0.5 m
Q = 10,000
L = 342 H
C = 0.096 fF
R = 189
C0 = 2.98 fF
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MEMSMTODARPADARPA
Filter Design
• Review existing crystal filter topologies and assess performance metrics.
• Down-select a filter topology based on specifications set by RF group.
• Define fabrication requirements and tolerances to achieve desired performance with each topology
Primary Objectives:
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MEMSMTODARPADARPA
Dual Resonator Ladder
VinVoutRL
RS
Zp
Zs
-35
-30
-25
-20
-15
-10
-5
Mag
nitu
de (
dB)
-35
-30
-25
-20
-15
-10
-5
Mag
nitu
de (
dB)
Dual Resonator Ladder Filter Response
740 760 780 800 820 840 860Frequency (MHz)
740 760 780 800 820 840 860Frequency (MHz)
-90
0
90
Pha
se (
degr
ees)
-90
0
90
Pha
se (
degr
ees)
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MEMSMTODARPADARPA
Lattice Filter
Vin VoutR
R
Zb
Za
Zb
Za
Impedance of Za and Zb
ZaZb
Full filter response
wa wb
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MEMSMTODARPADARPA
Lattice Filter
Lattice Filter Response
-30
-25
-20
-15
-10
-5
Mag
nitu
de (
dB)
-30
-25
-20
-15
-10
-5
Mag
nitu
de (
dB)
-270
-180
-90
0
90
Pha
se (
degr
ees)
-270
-180
-90
0
90
Pha
se (
degr
ees)
775 780 785 790 795 800 805 810 815 820 825 830Frequency (MHz)
775 780 785 790 795 800 805 810 815 820 825 830Frequency (MHz)
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MEMSMTODARPADARPA
Simple Ladder Filter
Vin C12RL
RS
Z=sL+1/sC Z=sL+1/sC
Vout
102 103 104 105 106
-140
-120
-100
-80
-60
-40
-20
Frequency (MHz)
Magnitude (dB)
Simple Ladder Filter Response
-35
-30
-25
-20
-15
-10
-5
Mag
nitu
de (
dB)
-270
-180
-90
0
90
Pha
se (
degr
ees)
-35
-30
-25
-20
-15
-10
-5
Mag
nitu
de (
dB)
-270
-180
-90
0
90
Pha
se (
degr
ees)
798 799 800 801 802Frequency (MHz)
798 799 800 801 802Frequency (MHz)
Wideband Response
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MEMSMTODARPADARPA
Simple Ladder Filter
797.5 798 798.5 799 799.5 800 800.5 801 801.5 802 802.5
-30
-20
-10
0
Filt
er T
rans
mis
sion
(dB
)
data1
data2
data3
797.5 798 798.5 799 799.5 800 800.5 801 801.5 802 802.5-270
-180
-90
0
90
Pha
se (
degr
ees)
no mismatch
0.1 %
0.3 %
Effect of bar length mismatch on filter characteristic
Nominal values:
l = 6.04 mw = 3.22 mt = 0.5 m
RS, RL = 1758 C12 = 113.2 fF
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MEMSMTODARPADARPA
Vin
Vout
RS
RL
C12
Vin
RS
Vout
RL
C12
Mechanically Coupled Devices
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MEMSMTODARPADARPA
Device Measurement
• Confirm successful operation of resonators and accuracy of the analytic model (f vs. l, spurious modes)
• Fit measurements to a discrete circuit model, adjust model if necessary, and extract resonator parameters (ie, determine resonator Q)
• Use resonator performance results and analysis of parasitics to guide process and design improvements
Primary Objectives:
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MEMSMTODARPADARPA
Device Measurement
Device (GSG configuration)
5 m
3 m
~800 MHz resonator structure
C
Co
L R
RL
RS
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MEMSMTODARPADARPA
First Round DevicesLongitudinal axis
AlN
contactcontact
C
Co
L R
RL
Rs
Cthru
S21
(dB
)
100
50
675 800 MHz 925
0
Cthru=0
Cthru=2pF
5 m Bar, Q=104
30
20
10
140 160 MHz 180
Cthru=2pF
25 m Bar, Q=103
S21
(dB
)
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MEMSMTODARPADARPA
First Round L-Bar Resonance
-16
-15.9
-15.8
-15.7
-15.6
-15.5
69
70
71
72
73
146 150147 149148
Frequency (MHz)
Pha
se (
degr
ees)
S21
(dB
)
Cthru ~ 2 pF
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MEMSMTODARPADARPA
Measurement Results
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2
200
400
600
800
1 / m
Freq
uenc
y (M
Hz)
~ 3.8 GHz - m
12
E
=
-21
-20
-19
-18
-17
-16
-15
120 130 140 150 160
Frequency (MHz)
S21
(dB
)
30 m bar
25 m bar
Fundamental Length Resonances
Fundamental Width Resonances
-9
-8
-7
-6
600 700 800 900
Frequency (MHz)
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MEMSMTODARPADARPA
Second Round L-Bar
-80
-70
-60
-50
-40S
21 M
agni
tude
(dB
)
100 200 300 400 500 600 700 800 900 100060
70
80
90
100
110
Pha
se (
degr
ees)
Frequency (MHz)
10 m x 5 m device showing length and width modes
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MEMSMTODARPADARPA
Fit to ModelS21 data from 10m x 5m device
Parasitics modeled as port capacitance and resistance
BVD circuit parameters
•R= 35 k•L= 1 mH•C=0.047 fF•C0=12.7 fF •Q of ~125
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MEMSMTODARPADARPA
Metal-Oxide-Silicon Structures
0 100 200 300 400 500 600 700 800 900 1000-100
-80
-60
-40
-20
0
S2
1 M
ag
nitu
de
(d
B)
0 100 200 300 400 500 600 700 800 900 1000-200
-100
0
100
200
Ph
ase
(d
eg
ree
s)
Frequency (MHz)
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MEMSMTODARPADARPA
Glass Substrate
0 500 1000 1500 2000 2500 3000
-100
-80
-60
OP6 on Glass
S21
Mag
nitu
de (
dB)
0 500 1000 1500 2000 2500 30000
50
100
150
Pha
se (
degr
ees)
Frequency (MHz)
datasimulation
OP6 fit parameters:
- pure open to ground
- 1.43fF thru capacitance
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MEMSMTODARPADARPA
Glass Substrate
OP1 fit parameters:
- pure open to ground
- 2.6fF thru capacitance0 500 1000 1500 2000 2500 3000
-100
-80
-60
OP1 on Glass
S21
Mag
nitu
de (
dB)
0 500 1000 1500 2000 2500 30000
50
100
150
Pha
se (
degr
ees)
Frequency (MHz)
datasimulation
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MEMSMTODARPADARPA
Conclusions
• Filter designs will be implemented on upcoming mask layout. Mechanically coupled device will be used.
• An accurate model of parasitics is vital for obtaining useful device measurements.
• Ongoing work to define explanation for the 100 MHz resonance on silicon substrate, and the wideband phase noise
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MEMSMTODARPADARPA
AcknowledgementsDraper Engineering
Amy Duwel, David Carter, Doug White
Draper FellowsPaul Calhoun, Luke Hohreiter
Draper Program ManagerJames Sitomer
Acknowledgements:Draper: Connie Cardoso, Mert Prince, Mark April,
Mark Mescher and Mathew VargheseMIT: Prof. Charles Sodini
DARPA: Contract # DAAH01-01-C-R204
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MEMSMTODARPADARPA
S-parameters
2-port
network
Po
rt 1
Po
rt 2
V1+ V1
- V2- V2
+
jkVV
V
kj
i
i j
,0
S
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MEMSMTODARPADARPA
Z-parameters
2-port
network
Po
rt 1
Po
rt 2
I1 I2 +
V1
-
+
V2
-
V1 = Z11I1 + Z12I2
V2 = Z21I1 + Z22I2
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MEMSMTODARPADARPA
Two-port model
Zb
Zc Za
cba
cba11 ZZZ
ZZZZ
cba
ca12 ZZZ
ZZZ
cba
bac22 ZZZ
ZZZZ
1222a
Z-Z
ZZ
12b
Z
ZZ
1211c
Z-Z
ZZ Z = Z11Z22-Z12
2
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MEMSMTODARPADARPA
Transformed Zb Impedance Data
1.5 2 2.5 310
0
101
102
103
Zb Magnitude and Phase
Impe
danc
e M
agni
tude
(
)
1.5 2 2.5 3-2
-1
0
1
2
Impe
danc
e P
hase
(ra
dian
s)
Frequency (GHz)
fs fp
|Zs|
|Zp|
LC
1π2
ss fw
0C
C1π2
spp wfw
RRCj1
RZ
0
s
sw
20
220
2
0
pRC
1
RC
RCj-1Z
pp
p
ww
w
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MEMSMTODARPADARPA
BVD Model Fitting
0
10
20
30
40
50
60Zb Magnitude and Phase
Impedance Magnitude (dB)
1.5 2 2.5 3-2
-1
0
1
2
Impedance Phase (radians)
Frequency (GHz)
datadatamodel
R = 2.76 , L = 91.6 nH, C = 0.061 pF, C0 = 1.54 pF
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MEMSMTODARPADARPA
Filter Design Constraints
• Q assumed to be a function of the process and static• Two degrees of freedom, l and w/t• Resonant frequency fixes l uniquely• For a given frequency, the other degree of freedom
controls the “impedance level”• C/C0 fixed by piezoelectric materials parameters
Constraints placed on equivalent circuit parameters bybar geometry: