mems and asic design capabilities

7/27/2019 Mems and Asic Design Capabilities

1/18

Fraunhofer IPMS

Harald

Schenk

IPMS MEMS and ASIC design capabilities


2/18

Fraunhofer IPMS

IPMS MEMS design capabilities / services

MEMS design

and layout

in-depth

know-how

in physical

domain

simulation, including

coupled

domain simulation

reduced

order models

tools: ANSYS, COMSOL, MATLAB, SIMULINK, MATHEMATICA, CADENCE

ASIC design

and layout

Complete

analog, digital and mixed-signal

design

& simulation

integration

of actuators

and sensors

MEMS-on-CMOS

OLED-on-CMOS

tool: CADENCE


3/18

Fraunhofer IPMS

MEMS simulation process/methodology

geometry,

environment


4/18

Fraunhofer IPMS

MEMS Design: Physical domains

stress distribution

Finite Element Analysis: Optimization

of

stress distribution

in torsional

springs

Finite Element Analysis:Model of a mirror platesuspended

by 8

distributed

spings

to

enhance

dynamic mirror flatness

G E

Structural mechanics

hinges

cantilevers

dynamical behaviour

inertial effects

optimizationalgorithms

stress/load analysis

linear and non-lineareffects

optimization


5/18

Fraunhofer IPMS


Modal analysis (FEM)

eigenmode

analysis for

wanted und interferingmodes

flexible modular FEMmodel generation for1D-

or 2D-scanning

mirrors, translationmirror

pre-stress modalanalysis to includeadditional nonlinearconstraints

interfering

eigenmodeintended

eigenmode

1D-Translational Mirror

interfering

eigenmodeintended

eigenmode

2D-Torsional Scanning Mirror


6/18

Fraunhofer IPMS


Fluid mechanics

friction

damping

fluidic flow analysis

flow profiles

fluid / structureinteraction

non-linear effects

optimization

FEA: Pressure, fluid flow profile and damping forceinteraction of out of plane comb electrode fingers

FEA: Pressure and fluid flow profile of an resonantrocking micro plate

fluid flow profile and damping force


7/18

Fraunhofer IPMS

Electrical field

Steady-state currentconduction analysis

time-transient electricfield analyses

electrical fielddistribution

2D-

or 3D-FEM-field

models

capacitance simulationfor complex structures

electrostatic forces


3D-combfinger capacitance

3D-FEM

modelengaged

deflected

0 5 10 15 20 250

0.5

1

1.5

x 1014

x/o

C/F

3D FEA

2D FEA fit

analytic

hybrid

a)

field distribution


8/18

Fraunhofer IPMS


Vorschlag

Piezoresistivity

structure mechanics /electric interaction

load dependentresistance & voltage

stress-, electric- andcurrent-fielddistribution

normal and sheer stress

transducer concepts

structural and dopinglevel optimization

FEA: Normal strain in an optimized silicon torsional

spring sensor geometry

piezoresistive

sensor

FEA: Strain depending current density

0

j

local resistance minima


9/18

Fraunhofer IPMS


Piezo

electricity

electric / structuremechanics interaction

multilayered materialstack deformationprofiles

voltage dependentdeformation of bi-

and

multimorph

layers

thermal stressoptimization

layered stackoptimization

FEA: Deformation profile of an piezoelectric bimorphmirror for active focus variation

piezo

electric bimorph


10/18

Fraunhofer IPMS


0.0 0.2 0.4 0.6 0.8 1.00.0

0.2

0.4

0.6

0.8

1.0infinite stiffness

distributed springs

conventional design

MTF

kx/ k

max

Stress & temperature compenstated

HR bragg

mirror

Optics

Bragg mirrors

AR/HR coatings

influence of mirrordeformation on optical

properties

point spread function(PSF)

modulation transfer

function (MTF)

Bragg mirror

optical quality

Point spread

function and modulation transfer

function


11/18

Fraunhofer IPMS


Coupled field

magneto-structuralanalysis

electro-thermal analysis

structural-thermal or

structural-thermal- electric analysis

piezoelectric orpiezoresistive

analysis

temperature/resistance change versus Jouleheating (transient)

silicon spring withhigh-doped layer

AMES-B.10-var-2: Flexure-Heating (86V,tau=0.27s,)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

0 10 20 30 40 50 60 70

current/mA

20.0

30.0

40.0

50.0

60.0

70.080.0

90.0

100.0

110.0

120.0

0 10 20 30 40 50 60 70

temperatur

e/C

5.6

5.7

5.8

5.9

6.0

6.1

6.2

6.3

6.4

0 10 20 30 40 50 60 70

time / s

resista

nce/kOhm

heatingexpansion


12/18

Fraunhofer IPMS

Coupled field

magneto-structuralanalysis

electro-thermal analysis

structural-thermal or

structural-thermal- electric analysis

piezoelectric orpiezoresistive

analysis

simulation of magneto static fielddistribution and

force

load: current density

1

1

12

2

coil structure on moveable

mirror plate (1) and fixedframe (2) 2D-simulation inside view

magnetic force

contributionofinductance



13/18

Fraunhofer IPMS

System Design

step

response

Controller circuit

network basedapproach

system response

dynamics

controller circuitsynthesis

System response

network

model

of

the MEMS device

heuristic

controller


14/18


15/18

Fraunhofer IPMS

ASIC Design: Analog

Sensor integration

on-chip signal

acquisition

integration intoprocessing

environment

Opto-ASICs

CMOS embeddedmagnetic field sensors:

flux gate, Hall

pressure/temperatureintegrated sensorcircuits

Sensor signalconditioner

PS2A

Opto ASIC

OLED microdisplay

with

embedded

CMOS photodiodes

Hall line sensor

Opto ASIC with embedded

OLED illumination


16/18

Fraunhofer IPMS

ASIC Design: Digital

RAM8kx8 Flash8kx16

RF FE EEPROM512Controller MSP430& con trol logic

RAM8kx8 Flash8kx16

RF FE EEPROM512Controller MSP430& con trol logic

IP Cores

interfaces(e. g. MEMS projectorcontrol)

controller/processor(e. g. embedded micro-

controller MSP430)

cryptography

transponder

(e. g. smart RF-ID)

MEMSprojectorinterfacecontrol

controller/

processor


17/18

Fraunhofer IPMS

Mixed-signal IPMS CMOS Design Portfolio

HV: high voltageMS: mixed-signal/analog

Prog.: non-volatile storage

: wafer

diameter

Technology HV Ana NVM Major application Source

5/2.0m + + - 6 MEMS, mixed-sig

I(P)MS

1.5m + + - 6 mixed-sig, sensor

1.2m + + + 6 MEMS Controller, mixed-sig, OLED, sensor,...

1.0m - + + 6 analog, mixed-sig, sensor,...

0.8m + + + 6 analog, mixed-sig, MEMS, ...

0.6m - + + 6 analog, mixed-sig, digital

1.0m SOI + + - 6 analog, mixed-sig, sensor, display

siliconfoundry

1.0m + + - 6" OLED-on-CMOS, sensor

0.6m + + + 6 MEMS control, transponder, display, OLED-on-CMOS

0.35m + + + 8 MEMS control, sensor, OLED-on-CMOS

0.18m + + - 8" sensor, OLED-on-CMOS, display

0.25m - + - 8 analog HS I/O (1.25Gbps)

customer

(IDM)

0.18 m - + - 8 analog HS I/O (1.25Gbps)




18/18

Fraunhofer IPMS

Contact

Dr. Harald Schenk

deputy

director

Fraunhofer Institute for Photonic

Microsystems

Maria-Reiche-Str. 2

D-01109 Dresden

Germany

mems and asic design capabilities

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