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    Deep Indexing added to selected databases

    Poetry and Audience in America

    Discovery Guides

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    MicroElectroMechanical Systems (MEMS)!"eleased #ctober $%%'

    by Salvatore A( )ittorio

    "evie* +ey ,itations -eb Sites Glossary ,on.erences /ditor

    Review Article

    I. Introduction

    0icroelectromechanical systems !0/0S' are small integrated devices or systems that

    combine electrical and mechanical components( They range in si1e .rom the sub

    micrometer!or sub micron' level to the millimeter level2 and there can be any number2

    .rom a .e* to millions2 in a particular system( 0/0S extend the .abrication techni3ues

    developed .or the integrated circuit industry to add mechanical elements such as beams2

    gears2 diaphragms2 and springs to devices(

    /xamples o. 0/0S device applications include in45et6printer cartridges2 accelerometers2

    miniature robots2 microengines2 loc4s2 inertial sensors2 microtransmissions2 micromirrors2

    micro actuators2 optical scanners2 .luid pumps2 transducers2 and chemical2 pressure and

    .lo* sensors( Ne* applications are emerging as the existing technology is applied to the

    miniaturi1ation and integration o. conventional devices(

    These systems can sense2 control2 and activate mechanical processes on the micro scale2

    and .unction individually or in arrays to generate e..ects on the macro scale( The micro

    .abrication technology enables .abrication o. large arrays o. devices2 *hich individually

    per.orm simple tas4s2 but in combination can accomplish complicated .unctions(

    0/0S are not about any one application or device2 nor are they de.ined by a single

    .abrication process or limited to a .e* materials( They are a .abrication approach that

    conveys the advantages o. miniaturi1ation2 multiple components2 and microelectronics to

    the design and construction o. integrated electromechanicalsystems( 0/0S are not only

    about miniaturi1ation o. mechanical systems7 they are also a ne* paradigm .or designing

    mechanical devices and systems(

    The 0/0S industry has an estimated 8% billion mar4et2 and *ith a pro5ected %6$%9

    annual gro*th rate2 it is estimated to have a 8:; billion mar4et in $%%$ ecause o.

    the signi.icant impact that 0/0S can have on the commercial and de.ense mar4ets2

    industry and the .ederal government have both ta4en a special interest in their

    development(

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    II. Historical Background

    The invention o. the transistorat >ell Telephone aboratories in ?;@ spar4ed a .ast6

    gro*ing microelectronic technology( ac4 +ilby o. Texas Instruments built the .irst

    integrated circuit!I,' in ?BC using germanium !Ge' devices( It consisted o. one

    transistor2 three resistors2 andone capacitor( The I, *as implemented on a sliver o. Ge

    that *as glued on a glass slide( ater that same year "obert Noyce o. airchildSemiconductor announced the development o. a planardouble6di..usedSi I,( The

    complete transition .rom the original Ge transistors *ith gro*n and alloyed 5unctions to

    silicon !Si' planar double6di..used devices too4 about % years( The success o. Si as an

    electronic material *as due partly to its *ide availability.rom silicon dioxide !Si#$'

    !sand'2 resulting in potentially lo*er material costs relative to other semiconductors(

    Since ?@%2 the complexity o. I,s has doubled every t*o to three years( The minimum

    dimension o. manu.actured devices and I,s has decreased .rom $% microns to the sub

    micron levels o. today( ,urrent ultra6large6scale6integration !ESI' technology enables the

    .abrication o. more than % million transistors and capacitors on a typical chip(

    I, .abrication is dependent upon sensors to provide input .rom the surrounding

    environment2 5ust as control systems need actuators !also re.erred to as transducers' in

    order to carry out their desired .unctions( Due to the availability o. sand as a material2

    much e..ort *as put into developing Si processing and characteri1ation tools( These tools

    are no* being used to advance transducer technology( TodayFs I, technology .ar outstrips

    the original sensors and actuators in per.ormance2 si1e2 and cost(

    Attention in this area *as .irst .ocused on microsensor !i(e(2 micro.abricated sensor'

    development( The .irst microsensor2 *hich has also been the most success.ul2 *as the Si

    pressure sensor( In ?B; it *as discovered that the pie1oresistive e..ectin Ge and Si had

    the potential to produce Ge and Si strain gauges*ith a gauge .actor !i(e(2 instrument

    sensitivity' % to $% times greater than those based on metal .ilms( As a result2 Si strain

    gauges began to be developed commercially in ?BC( The .irst high6volume pressure

    sensor *as mar4eted by National Semiconductorin ?@;( This sensor included a

    temperature controller .or constant6temperature operation( Improvements in this

    technology since then have included the utili1ation o. ion implantation.or improved controlo. the pie1oresistor.abrication( Si pressure sensors are no* a billion6dollar industry

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    C'(

    ?( 0( em4in2 0( #rti12 N( -ong4omet2 >( >oser2 and ( Smith2 A :6axis sur.ace

    micromachined sigma6delta accelerometer2 Proc( ISS,, ?@2 pp( $%$6$%:2 ??@(

    %( "( Nasby2 ( Sniego*s4i2 ( Smith2 S( 0ontague2 ,( >arron2 -( /aton2 P( 0c -horter2D( Hetherington2 ,( Apblett2 and ( leming2 Application o. chemical6mechanical polishing

    to planari1ation o. sur.ace6micromachined devices2 Proc( Solid6State Sensor and Actuator

    -or4shop2 pp( ;C6B:2 ??(

    ( ( Sniego*s4i2 0ulti6level polysilicon sur.ace micromachining technology Applications

    and issues2 AS0/ International 0echanical /ngineering ,ongress and /xposition2 ??(

    $( David >ishop2 "andy Giles2 and ,harles "oxlo2 0icromirrors relieve communications

    bottlenec4s2 Photonics Spectra2 vol( :;2 no( :2 0ar( $%%%2 pp( @6?(

    :( +o5i Ta4ahashi2 Hiro.umi Sa4ai2 +unihito Nagayama2 A4ihito >aba2 +en5i 0a4ihara2

    Tanemesa Asano2 )apori1ation and nucleation on microheater in microchannel *ith no11le2

    AIAA Thermophysics ,on.erence2 :Bth2 Anaheim2 ,A2 une 6;2 $%%2 AIAA Paper $%%6:%@B'(

    ;( ames H( Smith and Steven T( -alsh2 Selecting a process paradigm .or an emergent

    disruptive technology /vidence .rom the emerging microsystems technology base2 ??@(

    B( H( ,( Nathanson and "( A( -ic4strom2 A resonant6gate silicon sur.ace transistor *ith

    high bandpass properties Applied Physics etters @2 C; !?B'

    ( httpJJmems(engr(*isc(eduJpolysilicon(html( Eniversity o. -isconsin2 0adison2

    -isconsin(

    K ,opyright $%%2 All "ights "eserved2 ,SA

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    $&$S'Based Sensor (ec"nology

    Micro-electro0ec'anical syste0s !M5MS$ are )reescale>s enabling tec'nology /or acceleration and ressuresensors, M5MSbased sensor roducts roide an inter/ace t'at can sense? rocess and+or control t'e surroundingeniron0ent,

    )reescale>s M5MS-based sensors are a class o/ deices t'at builds ery s0all electrical and 0ec'anical co0onentson a single c'i, M5MS-based sensors are a crucial co0onent in auto0otie electronics? 0edical e;ui0ent? 'arddis7 dries? co0uter eri'erals? &ireless deices and s0art ortable electronics suc' as cell 'ones and %DAs,

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    )reescale Se0iconductor 'as been deeloing M5MS-based sensors /or al0ost B years, 2'e rocess tec'nologyused to 0anu/acture t'e sensors can broadly be groued into t&o bul7 0icro0ac'ing and sur/ace 0icro0ac'ining,9ur organi@ation roduces acceleration sensors and ressure sensors, )reescale is a 'ig' olu0e 0anu/acturer o/M5MS-based sensors,

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    Applications

    M5MS-based sensors are a crucial co0onent in auto0otie electronics? 0edical e;ui0ent? s0art ortableelectronics suc' as cell 'ones? %DAs? and 'ard dis7 dries? co0uter eri'erals? and &ireless deices, 2'esesensors began in t'e auto0otie industry esecially /or cras' detection in airbag syste0s, 2'roug'out t'e 1Bs totoday? t'e airbag sensor 0ar7et 'as roed to be a 'uge success using M5MS tec'nology, M5MS-based sensorsare no& beco0ing erasie in eeryt'ing /ro0 in7Eet cartridges to cell 'ones, 5ery 0aEor 0ar7et 'as no&e0braced t'e tec'nology,

    #AR$&$S (ec"nology

    )reescale>s ne#t-generation 'ig' asect ratio 0icro-electro0ec'anical syste0s !ARM5MS$ tec'nology is a roentec'nology /or airbag sensing alications, 2'e accelero0eters 'ae an adanced transducer design t'at en'ancessensor o//set er/or0ance, ARM5MS tec'nology roides oer-da0ed 0ec'anical resonse and e#cetionalsignal-to-noise ratio to address custo0er re;uire0ents, Since t'e airbag 0ain 5CU syste0 is installed in t'e e'iclecabin? oer-da0ed ARM5MS tec'nology enables a 'ig' degree o/ i00unity to 'ig'-/re;uency? 'ig'-a0litudearasitic ibrations, ARM5MS tec'nology 'as also been introduced in dual-a#is accelero0eters used in electronicstability control !5SC$ to 0easure t'e lateral acceleration o/ t'e e'icle,

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    $&$S Sur)ace $icromac"ining

    .n sur/ace 0icro0ac'ining? t'e M5MS sensors are /or0ed on to o/ t'e &a/er using deosited t'in /il0 0aterials,2'ese deosited 0aterials consist o/ structural 0aterials t'at are used in t'e /or0ation o/ t'e sensors and sacri/iciallayers t'at are used to de/ine gas bet&een t'e structural layers, Many o/ t'e sur/ace 0icro0ac'ined sensors uset'e caacitie transduction 0et'od to conert t'e inut 0ec'anical signal to t'e e;uialent electrical signal, .n t'ecaacitie transduction 0et'od? t'e sensor can be considered to be a 0ec'anical caacitor in &'ic' one o/ t'elates 0oes &it' resect to t'e alied 'ysical sti0ulus, 2'is c'anges t'e ga bet&een t'e t&o electrodes &it' a

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    corresonding c'ange in t'e caacitance, 2'is c'ange in caacitance is t'e electrical e;uialent o/ t'e inut0ec'anical sti0ulus,

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    $&$S Bul, $icromac"ining

    .n bul7 0icro0ac'ining? t'e single crystal silicon is etc'ed to /or0 t'ree-di0ensional M5MS deices, 2'is is asubtractie rocess in &'ic' t'e silicon in t'e &a/er is seci/ically re0oed using anisotroic c'e0istries, Using t'isbul7 0icro0ac'ining 0et'od? sensors suc' as ie@oresistie ressure sensors 'ae been 0anu/actured in 'ig'olu0e, .n t'e si0lest i0le0entation? t'e silicon is selectiely etc'ed in certain areas to /or0 a dia'rag0, .n anabsolute ressure sensor? t'e silicon &a/er is t'en bonded &it' anot'er &a/er !eit'er o/ silicon or glass$ to /or0 a

    acuu0-sealed caity belo& t'e dia'rag0, 2'e dia'rag0 t'en de/lects in resonse to t'e alied ressure, 2'etransduction 0ec'anis0 t'at 'as been &idely used is t'e ie@oresistie e//ect, .n ie@oresistie 0aterials? t'e c'angein t'e stress causes a strain and a corresonding c'ange in t'e resistance, 2'us? &'en i0lanted ie@oresistors are/or0ed at t'e 0a#i0u0 stress oints o/ t'e dia'rag0? t'e de/lection under t'e alied ressure causes a c'ange int'e resistance, 2yically? t'ese ie@oresistors are /or0ed as a bridge net&or7 and t'e oltage alied bet&een t&oter0inals cause an outut oltage to be 0easured bet&een t'e ot'er t&o ter0inals,

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