memristor : the future of the electronics
TRANSCRIPT
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Fourth Fundamental Circuit
Element: Memristor
Ashish Kumar
Roll No. PhD12110202
Discipline of Electrical Engineering
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Outline
Fundament circuit elementFourth element : memristor
Memristor
Memristor modelImplementation technique
Fabrication process
Logic based on memristorCapabilities of memristor
Conclusion
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Fundamental Circuit Element
Chua, L. O. Memristor-the missing circuit element IEEE Trans. Circuit Theory CT Vol.18 Issue 5, pp.507519 1971.
V i
q
Voltage, VCurrent, A
Resistor:
Capacitor:Inductor:
Memristor:
Charge Flux?
d
dqM
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Fourth element: Memristor
Existence of memristor predict by
Prof. Leon Chua based on primarily
symmetry .
Two terminal passive Device. Memristor = Memory + Resistor
Memristor is non linear resistor &
non-volatile memory
Where w is state variable. Symbol of MemristorChua, L. O. Memristor-the missing circuit element IEEE Trans. Circuit Theory CT Vol.18 Issue 5, pp.507519 1971.
iiwRv ),(
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Memristor Model
Consider a thinsemiconductor film ofthickness D sandwiched
between two metalcontacts.
Doped region has lowresistance (Ron) and
reminder has high resistanceROFF
1. Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart & R. Stanley Williams The missing MemristorfoundNature Letter
Vol. 453 pp. 80-83 May2008.
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1. Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart & R. Stanley Williams The missing MemristorfoundNature Letter
Vol. 453 pp. 80-83 May2008.
2. Yenpo Ho, Garng M. Huang, Peng LiNonvolatile Memristor Memory: Device Characteristics and Design Implications
IEEE/ACM International Conference on Computer-Aided Design Digest of Technical Papers pp. 485 2009.
Memristor Model (Cont.)
dtdqMdtddqd
/
)/)(1(2
DtqRRM ONvOFFq
Flux Controlled Memductance [2]2/12
0]/)()/1[( Doff tDWRM
Where M is function of charge or flux.
Current Controlled Memristance [1]
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Implementation Techniques For
Memristor
Titanium dioxide memristors
Polymeric (ionic) memristors
Manganite memristors
Resonant - tunnelling memristors
Spintronic memristors
ZnO-based memristor
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Fabrication Process Flow
Starting with the Silicon
wafer as base substrate. Deposition of bottom
electrode.
TiO2 deposition +Annealing in presence ofO2.
Top electrode depositionsimilar to bottomelectrode.
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Memristors I-V Curve
Memristive switching curves. Arrows indicate the
sweeping direction of applied voltage
Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart & R. Stanley Williams The missing Memristor found
Nature Letter Vol. 453 pp. 80-83 May2008.
Drift Motion of Oxygen vacancies, which are
positively charged carriers
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Fabrication Technique for Memristor
T. Prodromakis, K. Michelakis and C. Toumazou Practicalmicro/nano fabrication implementations of memristive devices
12th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) pp. 1-4, Feb. 2010 .
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Memristor Crossbar Latches
http://www.hpl.hp.com/news/2008/apr-jun/engineering_memristor.html
50 nm
half-pitch
Pt
Tio2 Pt
Reversible and non-
volatile switching of
nanoscale TiO2 -x devices.
An AFM image of 1 17
nano-cross point devices
with 50 nm half-pitch Pt
nano wires fabricated by
nano imprint lithography.
Sandwich a 50-nm-thick
TiO2 insulating thin film
between Pt wires.
50
http://www.hpl.hp.com/news/2008/apr-jun/engineering_memristor.htmlhttp://www.hpl.hp.com/news/2008/apr-jun/engineering_memristor.htmlhttp://www.hpl.hp.com/news/2008/apr-jun/engineering_memristor.htmlhttp://www.hpl.hp.com/news/2008/apr-jun/engineering_memristor.html -
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Logic Based On Memristor
Imply Logic implemented by materialimplication Boolean logic operation on two
variables p and q such that p q using
memristors. For understanding:
All crow are black.
Take P- crow and Q-black
P Q P Q
T T T
T F FF T T
F F TJulien Borghetti, Gregory S. Snider, Philip J. Kuekes, J. Joshua Yang, Duncan R. Stewart & R. Stanley Williams
Memristive switches enable stateful logic operations via material implication Nature Letter Vol. 464 no. 8 pp.873-876 2010.
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Logic Based On Memristor (Cont.)
Consider memristor operate in one quadrant
Ron< RG< Roff VCOND
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Capabilities of the Memristor
Memristor based memory capable to have high
density approx. 154-309 Gbit/cm2 and more.
Complex self learning neural networks and hybridtransistor/memristor circuit.
Memristor logic circuits on par with CPUs and other
transistor circuits. Advanced artificial thinking brains.
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Conclusion
Able to extend Moores law. Memristor- potential candidate for non-linear
electronics.
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Acknowledgement
Prof. Maryam S. Baghini, Centre of Excellence
in Nanoelectronics, IIT-Bombay.
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