malvino electronic principles sixth edition. chapter 6 bipolar transistors
TRANSCRIPT
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MALVINO
ElectronicPRINCIPLES
SIXTH EDITION
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Chapter 6
Bipolar Transistors
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COLLECTOR (medium doping)
BASE (light doping)
EMITTER (heavy doping)
N
P
N
The bipolar junction transistor has 3 doped regions.
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N
P
N
VCE
VCC
RC
RB
VBB
VBE
In a properly biased NPN transistor, the emitter electrons diffuse into the base and then go on to the collector.
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Conventional flow Electron flow
IC
IB
IE
IC
IB
IE
IE = IC + IB IC IE IB << IC
dc = IC
IE
dc = IC
IB
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VCE
VCC
RC
RB
VBB
VBE
The common emitter connection has two loops:the base loop and the collector loop.
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Subscript notation
• When the subscripts are the same, the voltage represents a source (VCC).
• When the subscripts are different, the voltage is between two points (VCE).
• Single subscripts are used for node voltages with ground serving as the reference (VC).
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VCE
VCC
RC
RB
VBB
VBE
The base circuit is usually analyzed with the same approximation used for diodes.
IB =VBB - VBE
RB
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
A graph of IC versus VCE
20 A
0 A
100 A
80 A
60 A
40 A
(Note that each new value of IB presents a new curve.)
This set of curves is also called a family of curves.
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Regions of operation
• Cutoff - - - used in switching applications
• Active - - - used for linear amplification
• Saturation - - - used in switching applications
• Breakdown - - - can destroy the transistor
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Transistor circuit approximations
• First: treat the base-emitter diode as ideal and use IB to determine IC.
• Second: correct for VBE and use IB to determine IC.
• Third (and higher): correct for bulk resistance and other effects. Usually accomplished by computer simulation.
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dcIB VCEVBE = 0.7 V
The second approximation:
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VCC
RC
RB
VBB
VBE = 0.7 V
IB =VBB - VBE
RB
IB =5 V - 0.7 V
100 k
5 V
100 k
= 43 A
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VCC
RC
RB
VBB 5 V
100 k
IB = 43 A
dc = 100
IC = dc IB
IC = 100 x 43 A = 4.3 mA
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VCC
RC
RB
VBB 5 V
100 k
IB = 43 A
IC = 4.3 mA
1 k
12 V
VRC = IC x RC
VRC = 4.3 mA x 1 k= 4.3 V
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VCC
RC
RB
VBB 5 V
100 k
IB = 43 A
IC = 4.3 mA
1 k
12 V
VCE = VCC - VRC
VCE
VCE = 12 V - 4.3 V = 7.7 V
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Typical Breakdown Ratings
• VCB = 60 V
• VCEO = 40 V
• VEB = 6 V
• Note: these are reverse breakdown ratings
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0
2468
101214
VCE in Volts
IC in mA
50
A graphic view of collector breakdown
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Typical Maximum Ratings
• IC = 200 mA dc
• PD = 250 mW (for TA = 60 oC)
• PD = 350 mW (for TA = 25 oC)
• PD = 1 W (for TC = 60 oC)
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Typical “On Characteristics”
IC in mA hFE(min) hFE(max)
0.1 40 ___
1 70 ___
10 100 300
50 60 ___
100 30 ___
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Troubleshooting
• Look for gross voltage errors.
• First approximation and mental estimates will usually suffice.
• Resistors don’t short but circuit boards can.
• Circuit boards can and do open.
• Junctions can and do short.
• Junctions can and do open.