magnetostrictive fe-ga/cu nanowires array for sensing

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Magnetostrictive Fe-Ga/Cu Nanowires Array for Sensing Applied Pressure Jung Jin Park, Sai Madhukar Reddy, Bethanie J. H. Stadler and Alison B. Flatau Nanowire Fabrication and Characterization Fe 100x Ga x (10 x 25 atomic %) shows large magnetostriction (~400 ppm) and ductile mechanical properties. Multilayered structures (Fe-Ga/Cu) was used to reduce the dominance of shape anisotropy NSF, ECCS # 1540539 Micromagnetic simulation Experimental results Experimental results (a) (b) (c) (d) (f) (e) FEM analysis OOMMF No compression Under compression A multi domain vortex structure forms at remanence with no strain. The stray field from the NW segments under compression. magnitude of stray fields induced by changes in magnetic domain structure will directly influence the GMR resistance. [GMR% = ((R(H) – R(H max) ))/R(H max )%] • No resistance change was observed by Cu NW array sample. • The coarse step (~ 1 μm) causes 2 times larger GMR % value change (0.5 – 0.65%) than the value change (0.2 – 0.3%) caused by the fine step (~ 100 nm). • Estimated values of sensor sensitivity are 1 ~ 4 mΩ/kPa. GMR sensor SEM: nanowire array compression Magnetoresistance response to in-plane magnetic fields of the GMR sensor. IEEE SENSORS JOURNAL, VOL. 17, NO. 7, APRIL 1, 2017

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Page 1: Magnetostrictive Fe-Ga/Cu Nanowires Array for Sensing

Magnetostrictive Fe-Ga/Cu Nanowires Array for Sensing Applied Pressure Jung Jin Park, Sai Madhukar Reddy, Bethanie J. H. Stadler and Alison B. Flatau

Nanowire Fabrication and Characterization Fe100−xGax (10 ≤ x ≤ 25 atomic %) shows large magnetostriction (~400 ppm) and ductile mechanical properties. Multilayered structures (Fe-Ga/Cu) was used to reduce the dominance of shape anisotropy

NSF, ECCS # 1540539

Micromagnetic simulation

Experimental results

Experimental results

(f)

(a) (b)

(c)

(e)

(d)

(f)

(a) (b)

(c)

(e)

(d)

FEM analysis OOMMF

No compression Under compression

A multi domain vortex structure forms at remanence with no strain. The stray field from the NW segments under compression. magnitude of stray fields induced by changes in magnetic domain structure will directly influence the GMR resistance.

[GMR% = ((R(H) – R(Hmax)))/R(Hmax)%]

•  No resistance change was observed by Cu NW array sample.

•  The coarse step (~ 1 µm) causes 2 times larger GMR % value change (0.5 – 0.65%) than the value change (0.2 – 0.3%) caused by the fine step (~ 100 nm).

•  Es t ima ted va lues o f senso r sensitivity are 1 ~ 4 mΩ/kPa.

GMR sensor

SEM: nanowire array compression

Magnetoresistance response to in-plane magnetic fields of the GMR sensor.

IEEE SENSORS JOURNAL, VOL. 17, NO. 7, APRIL 1, 2017