magnetocapacitive effect in sdw system (tmtsf) 2 asf 6

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Magnetocapacitiv e effect in SDW system (TMTSF) 2 AsF 6 D. Starešinić, D. Dominko, K. Biljaković Institute of Physics, Zagreb, Croatia P. Lunkenheimer, A. Loidl Institute of Physics, University of Augsburg, Germany

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Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6. D. Starešinić, D. Dominko, K. Biljaković Institute of Physics, Zagreb, Croatia P. Lunkenheimer, A. Loidl Institute of Physics, University of Augsburg, Germany. Phase diagram. new properties of SDW glass. SDW1. - PowerPoint PPT Presentation

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Page 1: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Magnetocapacitive effect in SDW system (TMTSF)2AsF6

D. Starešinić, D. Dominko, K. BiljakovićInstitute of Physics, Zagreb, CroatiaP. Lunkenheimer, A. LoidlInstitute of Physics, University of Augsburg, Germany

Page 2: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Phase diagram

new properties of SDW glass

SDW1

Page 3: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Low temperature SDW phase

thermodynamics

dielectric response

Lasjaunias et al. PRL 1994

NMR

Takahashi et al. JPSJ 1986

also AMR, microwave response…

Page 4: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Multiferroic SDW

SDW: incommensurate AFM + relaxor ferroelectric two coexistent ferroic orders possible multiferroic behaviour

SDW

Nad et al. SSC 1995 Levstik et al. PRB 1998

relaxor ferroelectric

Betouras et al. PRL 2007

Page 5: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Experiments (TMTSF)2AsF6

very similar to (TMTSF)2PF6

Dielectric measurements in magnetic field T down to 1.9 K B up to 8 T f 20 Hz – 1 MHz

j||a, B||c* Vac=5 mV (instrument limit)

too low for high precision

too high for SDW systems (ET~10 mV/cm) Hemberger et al. Nature 2005

Page 6: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Resistance

0 0.2 0.4 0.610

2

103

104

105

106

1/T (K)

R (

)

HT

LT

0 2 4 6 810

12

14

16

18

20

22

B (T)

(K

)

HTLT

B=0 T

B=8 T

Page 7: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Magnetoresistance

MR roughly linear in B T dependence similar to (TMTSF)2PF6

0 2 4 6 80

1

2

3

4

B (T)

(R(B

)-R

(0))

/R(0

)

0 2 4 6 8 10 120

0.1

0.2

0.3

0.4

0.5

T (K)

d(R

(B)/R

(0))

/d(B

)

1.9 K

Page 8: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

1.5 2 2.5 310

6

107

108

T (K)

Re

1.5 2 2.5 3

107

T (K)

Re

Dielectric constant

Similar as in (TMTSF)2PF6

B increases dielectric constant and relaxation time

1.5 2 2.5 310

6

107

108

T (K)R

e

B=0 T B=8 T

300 kHz300 kHz

1.6 kHz

80 Hz

Page 9: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Frequency dependence at 1.9 KCole-Cole fit

1)(1

)(i

102

103

104

10510

6

107

108

f (Hz)

Re

102

103

104

10510

6

107

f (Hz)

Im

0 T

8 T

0 T

8 T

104

10510

6

107

f (Hz)

Re

B||b’

0 T

5 T

Page 10: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Parameters at 1.9 K

Littlewood’s pinning&screening theory does not work increases faster than the order parameter B increases domain cooperativity?

)/exp( 00 BB

)/exp( *00 BB

BB dcdc ~)0(/)(

TBTB

28.3

*0

0

0 2 4 6 810

-4

10-3

10-2

10-1

B (T)

,

,

dc

10-10

dc

Page 11: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Temperature vs field dependence

102

103

104

10510

6

107

108

f (Hz)

Re

102

103

104

10510

6

107

f (Hz)

Im

0 T

8 T

0 T

8 T 102

103

104

10510

6

107

108

f (Hz)

Re

102

103

104

105

106

107

f (Hz)

Im

1.9 K

1.9 K

2.9 K

2.9 K

1.9 K 8 T

Suggests B-T scaling!

Page 12: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Temperature dependence

0.4 0.45 0.510

6

107

108

1/T (K)

0.4 0.45 0.5

10-5

10-4

10-3

1/T (K)

(s

)

0.4 0.45 0.510

6

107

108

1/T (K)

0.4 0.45 0.5

10-5

10-4

10-3

1/T (K)

(s

)

0 2 4 6 810

15

20

25

30

35

B (T)

Eac

t (K)

0 2 4 6 810

-11

10-10

10-9

10-8

B (T)

0, 0

0 10-13

0

)/exp(0 TEact

0 T

8 T

0 T

8 T

)/exp(0 TEact

Page 13: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Field dependence

0 2 4 6 810

6

107

108

B (T)

0 2 4 6 8

10-5

10-4

10-3

B (T)

(s

)

0 2 4 6 810

6

107

108

B (T)

0 2 4 6 8

10-5

10-4

10-3

B (T)

(s

)

1.8 2 2.2 2.4 2.62

4

6

8

10

12

T (K)

B0 (T

)

0.4 0.45 0.510

-7

10-6

10-5

10-4

1/T (K)

,

0

010-13

0

Eact=26 K

Eact=13 K

)/exp( 00 BB

1.9 K

1.9 K

)/exp( 00 BB

2.6 K

2.6 K

Page 14: Magnetocapacitive effect in SDW system (TMTSF) 2 AsF 6

Conclusions huge magnetocapacitive effect in

(TMTSF)2AsF6

multiferroic nature of low temperature SDW state

not the consequence of screening no simple relation between the (B¸,T),

(B,T) and (B,T) further measurements with better samples

at lower T, lower f and lower Vac