lukas worschechlukas worschech technische physik ... summer school 2011/worschech_energy... · g...
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![Page 1: Lukas WorschechLukas Worschech Technische Physik ... summer school 2011/Worschech_Energy... · g 1.3mV Lukas Worschech, NiPS summer sc hool 2011, Perugia, 01.-05.08.2011 . SR: Signal](https://reader031.vdocuments.site/reader031/viewer/2022022803/5c7a4e4709d3f24e7d8c1b12/html5/thumbnails/1.jpg)
Energy harvesting in nanoelectronic devices Lukas WorschechLukas Worschech
Technische Physik, Universität Würzburg, Germany
Lukas Worschech, NiPS summer school 2011, Perugia, 01.-05.08.2011
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Lukas Worschech, NiPS summer school 2011, Perugia, 01.-05.08.2011
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Energy harvesting with nanoelectronics
• Energy harvesting: Energy provider+Transducer+Rectifier
• Nonlinearities in nanoelectronics: Quantum effects, reduced screening, many devices, bits per volumeUlt i i t i d i it S ll i l t• Ultra-miniaturized circuits: Small signal-to-noise ratios (SNR) & feedback between different devices are unavoidable
• Is it possible to exploit ambient noise and• Is it possible to exploit ambient noise and feedback action for electronic applications
Lukas Worschech, NiPS summer school 2011, Perugia, 01.-05.08.2011
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Outline• Nanoelectronic semiconductor electronic
devices– Technologygy– Nonlinear nanoelectronic transport
• Magnetic field asymmetry in quantum wire• Magnetic field asymmetry in quantum wire• SR in a YBS as B field sensor• Y-branch as logic gate and GHz rectifier• Logic stochastic resonance in RTDsg
Lukas Worschech, NiPS summer school 2011, Perugia, 01.-05.08.2011
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semiconductors
• Electronics: frequencies Hz – THz• Optoelectronics: wavelengths 0.2 – 100 µmp g µ
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Some electronic devices
• Transistors and memories
bitlinewordline
bitline
FET
today FLASHcapacitorDRAM
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Electrostatics of FETs with nearby charges
g CQV
gq
Wq
g
Wq
gqWTg
CC
CC
CVVV
1)(
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Heterostructures: Band gap engineering
Combination of different semiconductors with atomic precision
Growth techniques: e g Molecular beam epitaxy (MBE) Growth techniques: e.g. Molecular beam epitaxy (MBE)
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GaAs/AlGaAs HEMT
Modulation-doped GaAs/AlGaAs heterostruktur (HEMT)
Mean free path: ~10µms @ 4,2K / 50 – 200nm @ RT
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Structuring
Top-down route: lithography, etching,…
Bottom-up route: self-assembly, seeded growth,…p y, g ,
Different geometries: wires, dots, rings, splitters…Lukas Worschech, NiPS summer school 2011, Perugia, 01.-05.08.2011
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Characteristic lengths• De Broglie wavelength: phldeBroglie /
• Fermi wavelength:FEEdeBroglieF ll |
kk • Mean free path: ek
me
ek
mpvlm
• Phase coherence length: mkThl 2/
L
a)
a) Diffusive
W
b)
)
)b) Coherentc) Ballistic
Wc)
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Linear mesoscopic transportp p
• Conductance quantization in 1D wires1D wires
III LRRLT
22
TffEEdEhe
eVf
RL
Dv D
**/1*2
)(~ 1
eV )(~
TheVIG
22/
• Multi-terminal conductor:
h
Landauer-Büttiker formula
jijii TeI 2
jj
ijii Th
I
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What is nano? A comparison: metals vs semiconductor
Metal:Gold film
H. Ohnishi et al., Nature 395, 780-782 (1998).
n = 2.3 x 1015/cm2
lF = 0.52 nm, EF=5.5 eVl ~ 1 10 nmlm ~ 1-10 nml~ 1-100 m
Semiconductor:2 dimensional electron gas (2DEG)
11 2n = 3.0 x 1011/cm2
lF = 46 nm, EF= 11 meVlm ~ 1-100 m T < 4 Km l~ 1-100 m
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Quantum wire
• Electron wave propagation: each occupied subband t ib t ith 2 2/h t th d t contributes with 2e2/h to the conductance
conductance quantization7
8
3
4
5
6
G (2
e2 /h)
0
1
2
3
0,5 1,0 1,5-1
Vg (V)
Lukas Worschech, NiPS summer school 2011, Perugia, 01.-05.08.2011
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Outline• Nanoelectronic semiconductor electronic
devices– Technologygy– Nonlinear nanoelectronic transport
• Magnetic field asymmetry in quantum wire• Magnetic field asymmetry in quantum wire• SR in a YBS as B field sensor• Y-branch as logic gate and GHz rectifier• Logic stochastic resonance in RTDsg
Lukas Worschech, NiPS summer school 2011, Perugia, 01.-05.08.2011
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Asymmetric scattering
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Deterministic asymmetry
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Outline• Nanoelectronic semiconductor electronic
devices– Technologygy– Nonlinear nanoelectronic transport
• Magnetic field asymmetry in quantum wire• Magnetic field asymmetry in quantum wire• SR in a YBS as B field sensor• Y-branch as logic gate and GHz rectifier• Logic stochastic resonance in RTDsg
Lukas Worschech, NiPS summer school 2011, Perugia, 01.-05.08.2011
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Stochastic resonance
SR k i l b• SR: weak signals can be amplified by fluctuations
• SR conditionsSR conditions– non-linear system (threshold)– Subthreshold signal– noise
• SR was introduced as model for explanation ofmodel for explanation of the periodic ocurrence of ice ages: Benzi, Parisi, SSutera, Vulpiani
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Dynamical gate operation in a YBS
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Bistable selfswitching:Bistable selfswitching: depends on the bias voltage
YBS as amplifier and rectier logic operation
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SR: Working principle
• self-gating leads to a bistableg gtransfer characteristic• the input and the working point
lt t t bi t blvoltages were set to bistableswitching controlled by noise • all measurements @ 20Kall measurements @ 20K
)sin()( 0, tVVtV ggg Input signal:
ggg
Weak periodic signal:
mVV 31 mVVg 3.1
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SR: Signal traces
f = 0.1 Hz
f = 1 Hz
f = 1.8 Hz
At f = 1 Hz the noise dynamics follow directly the frequency of the external input forcing and a maximum synchronization is found.
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Recording SR: Residence Time
For the unmodulated system with f = 0 Hz the residence time distribution decays exponentially with the inverse of thetime distribution decays exponentially with the inverse of the Kramer‘s rate
0.2
)exp()(,K
HL TTTN
(s)
KT0.1
NL
(T)
From fitting:
0 1 2 3 4 50.0
T (s)sTK )044.0502.0(
g
T (s)
KTT 2Time matching condition of SR: KTT 2Time matching condition of SR:
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Recording SR: Residence Time
0.20.2f = 0.6 Hzf = 0.1 Hz• For f < fSR the residence time
0 1 2 30.0
0.1
0 2 4 60.0
0.1 distribution is strongly controlled by the noise
0.40.4
0 1 2 3T (s)
0 2 4 6
f = 2.4 Hzf = 1.8 Hz
T (s)
0.0
0.2
0.0
0.2 • For f > fSR odd multiples of the periodic forcing Tω occur:
0 1 2 30.0
T (s)0 1 2 3
0.0T (s)2/)12( TnTn
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Recording SR: Residence Time
At the optimum frequency f = 1 Hz the residence time f fdistribution is almost perfectly restricted to the first peak.
0.4
(s)
0.2
NL
(T)
0 1 2 30.0
T (s)T (s)
The time scale condition of SR is fulfilled by tuning solely the frequency of the periodic forcingfrequency of the periodic forcing.
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SR: Residence Time Distribution
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Application: Magnetic field sensor
• Set the detector inSet the detector in the strongly noise activated regime• Magnetic field applied perpendicular to the motion ofto the motion of electrons either in or out of the plane
LHn
TT,1
p
ii
iLH
LHLH T
nT
1,
,,
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Application: Magnetic field sensor
0.700.75
Vbr,th • V decreases down
0 00.550.600.65
Vbarrier (V) -0,520 -0 514r
(V)
• Vbr decreases down to a magnetic field threshold Bth
• Transitions between
0 350.400.450.50
B
0,514 -0,508 -0,502 -0,496 -0,490
Vb
B
the two states occur between ∆B
1 5
0.0 0.5 1.0 1.5 2.0 2.5 3.00.35 B ,
B (T)
Bth
0.62
0.64
0 5
1.0
1.5
r,th
(V)
Bth
(T)The magnetic-field induced
switching is associated with
-0.52 -0.51 -0.50 -0.49
0.600.0
0.5V
br
B
a scattering asymmetry at the boundaries
Vbarrier (V)
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Application: Magnetic field sensor
3 0
s)2.53.0
ime
(s
1.52.0 TH TL
ence
ti
0 51.0
resi
de
0.00.5
mea
n r
0 10 20 30 40 50 60
m
B (mT)B (mT)
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Application: Magnetic field sensor
1.5 Measurement
0 51.01.5 Measurement
Simulation
)
Linear Fit• Output is a linear function of B around ∆T = 0 s
0 50.00.5
T
(s)
• Target signal independent iti it
-1.0-0.5 sensitivity
0 10 20 30 40 50 60-1.5
B ( T)
cBTBT 0)(B (mT)
cBTBS
)(B
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Outline• Nanoelectronic semiconductor electronic
devices– Technologygy– Nonlinear nanoelectronic transport
• Magnetic field asymmetry in quantum wire• Magnetic field asymmetry in quantum wire• SR in a YBS as B field sensor• Y-branch as logic gate and GHz rectifier• Logic stochastic resonance in RTDsg
Lukas Worschech, NiPS summer school 2011, Perugia, 01.-05.08.2011
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Y-branch as ballistic rectificationRectification due to junctions:
• pn-junction• pn junction
• Metal-semiconductor junction
Y-branch junction: no geometrical asymmetry!
V (Y)r
0 05
0,00
V (X)l V (X AND Y)s-0,10
-0,05
Vs (V
)
V r
V s-0,15
Experiment Theory:
diffusive ballistic
V l-0,4 -0,2 0,0 0,2 0,4
Vxy (V)
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Y-branch as ballistic rectification
V Vdiffusive Transport
Vl Vr
-0,05
0,00
-0,10
Vs (V
)
V s
Quasi-ballistic Transport
-0,4 0,0 0,4
-0,15 diffusive ballistic
, , ,Vxy (V)
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YBS nonlinearity used for a compact adder
Half-Adder: binary addition with carry bit
h bl
y y
S h
X Y Z C
Truth table
X & = AND
Scheme
X Y Z C
H H L H
&XY C
= XOR=
H L H L
L H H L
Z=
L L L L> 10 FETs + i t tinterconnects
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Nanoelectronic Half-Adder
• planar Half-Adder is basedon ballistic Y-junctionson ballistic Y junctions
• Inputs: x and y x g
• Outputs: c and z
Working point: s
lv sr• Working point: s
• Control: v
yc z
100 nm
L. Worschech et al., Appl. Phys. Lett. 83, 2462 (2003)
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ModelModel
control of Vz via Vc: gate
a) Injection of electronsc zc
sl r
b) Gating
N t l t !
c zz
VVVs
R
c
No external gate!
Self induced switching
VzVc Vdg
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0.1s
gate
l r
0.0 Vs = 0.1 V
Vz (V
)c zz
VVVs
R=10M
c
0 1 V
-0.1Vd = 0.1 V
VzVc Vd
-0.1 V -0.3 V -0.2 V
-0.4 -0.2 0.0 0.2 0.4Vc (V)
• Self switching N-shaped Vz (Vc)-characteristics
• Definition of the working point via Vsg p s
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y c zy
x
Vx
c
s
gate
l r
0 10Vs = -0.3 V
VZ
(L H)(H H)(H L)
VC y c zy z
VzVc Vd
VsVy
R
c
0.05
0.10
V)
Z
0.1C
V)
d
0.00
Vz (
V
0.0
Vou
t (V
-0.05• Push-Pull-Mode:Vx + Vy= 0.3 V
• Push-Pull-Mode:Vx + Vy= 0.3 V
1 50 0 75 0 00 0 75 1 50
-0.1
-0.6 -0.3 0.0 0.3Vc (V)
• Rectification: Vc < (Vx + Vy)/2 • Self induced Switching: M shaped V characteristic
• Rectification: Vc < (Vx + Vy)/2 • Self induced Switching: M shaped V characteristic
-1.50-0.75 0.00 0.75 1.50Vx -Vy (V)
M-shaped Vz-characteristicM-shaped Vz-characteristic
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V g Demonstration of logic function at RT:
T = 4.2 K T = 50 K T = 300 Ky c zy
x
z
Vx
Vs
c
s
g
l r
e o s a o o og c u c o a
0,00
0,10
z (V
)
y c zy zVz
Vc
V
Vy
R
c
-0,10
Vz
0 00
Vd
-0,50
-0,25
0,00
Vc (
V) X Y Z C
H H L HH L H L
(LL)
(HL)
(LH
)(H
H)
(HH
)(L
H)
(HL)
(LL)
(HH
)(L
H)
(HL)
(LL)
-0,75
H L H LL H H LL L L L Logic inputs (XY)L L L L
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Dynamic properties of rectification
0,0
room temperature
V)
-0,5
VS (
V
1 1 1 AND Address Level
)
-1,0-1
01 -1-1 1
-1 -1
VS (
V)
-1,0 -0,5 0,0 0,5 1,0
V (V)
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Microwave rectification: energy harvesting
2VV 2VcVs f
assuming3T ballistic cavity
)2
sin( 1~ tfVV
with
yA. N. Jordan, Markus Büttiker, PRB 2009 2
)2cos( 122 tfVcVcV ec 1~ )2
cos(22 ~~ tVVVs
F
c2
~
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High Frequency SetupHigh Frequency Setup
S-Parameter
2at detectedpower microwaveS1 into injectedpower microwave
de ec edpowec ow ve21 S
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Frequency doubling
-70 f2 = 100 MHz
Bm)Injection Detection
-70
-90
-80P 2 (dB
IS
V = 0S
IS
V = 0S
j
-80
P 2 (dB
m) -1,0 -0,5 0,0
V (V)
V o V-V /2o V o V-V /2o
f2 = 2f1f1
P
-902nd harmonic
0 5 10 15 20
2nd harmonic
f2 (GHz)f
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Microwave generates a DC current
10-3
10-2
T = 300 Kf = 10 GHz0,4
f1 = 10 GHz) 10-5
10-4
VC = -1 V
f = 10 GHz
)
0,2 10 dBm 8 dBm 6 dBm no microwave
I S (A
10-7
10-6
I S(A)
0,0 10-9
10-8
-0,1 0,0 0,1
V (V)-5 0 5 10 15
10-10VC = 0.3 V
P(dBm)V (V) P(dBm)
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Outline• Nanoelectronic semiconductor electronic
devices– Technologygy– Nonlinear nanoelectronic transport
• Magnetic field asymmetry in quantum wire• Magnetic field asymmetry in quantum wire• SR in a YBS as B field sensor• Y-branch as logic gate and GHz rectifier• Logic stochastic resonance in RTDsg
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Resonant-tunneling diode
fast operation TH● fast operation ~THz● negative differential resistance
ballistic operation at room temperature● ballistic operation at room temperatureLukas Worschech, NiPS summer school 2011, Perugia, 01.-05.08.2011
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RTD operation
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Logic operation with RTD mesas
200
050
100150200
V (m
V) split RTDdiameter: 600nm
0,00 0,25 0,50 0,75 1,00 1,25 1,50Vdc (V)
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No thermal transconductance limit ultra small switching voltagesNo thermal transconductance limit ultra small switching voltages
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Logic RTD gates
Vac = 23 mV Vac = 25 mVVac = 24.5 mV
V1 = V2 = 0 mV == Log. input I = I1+I2=0+0=0
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Logic RTD gates
Vac = 25 mV Vac = 26.5 mVVac = 26 mV
V1 = 0,2 V2 = 2,0 mV == Log. input I = I1+I2=1+0=0+1=1
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Logic RTD gates
Vac = 26.5 mV Vac = 29 mVVac = 27.5 mV
V1 = V2 = 2 mV == Log. input I = I1+I2=1+1=2
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Logic RTD gates
NOR
0 0 | 1NAND
0 0 | 10 0 | 11 0 | 00 1 | 0
0 0 | 11 0 | 10 1 | 1
1 1 | 0
transition from NOR to NAND opertation for
1 1 | 0
transition from NOR to NAND opertation for amplitude changes smaller than 1 mV
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Logic stochastic resonance
Murali, K. , Sinha, S. , Ditto, W. , Bulsara, A. Phys. Rev. Lett. 102, 104101 (2009).
Murali, K., Rajamohamed, I. , Sinha, S. , Ditto, W. , and Bulsara, A. , Appl. Phys. L tt 95 194102 (2009)Lett. 95, 194102 (2009).
L. W., F. Hartmann,T. Y. Kim,S. Höfling,M. Kamp A Forchel J Ahopelto 2I Neri AKamp,A. Forchel,J. Ahopelto,2I. Neri,A. Dari, L. Gammaitoni, APL 2010
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RTD as light sensor and light-programmable LSR
120 P=0nW P=0.1 nWGaussian Fit
60
80
100
Cou
nts
Gaussian Fit
91 90 89 88 87 86 85 840
20
40
-91 -90 -89 -88 -87 -86 -85 -84<VS> (mV)
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SummarySu a y
• Introduction into different nanoelectronicdevices
• Nonlinear transport: rectification, bistableswitching
• Noise-induced switching, logic stochastic resonanceRoutes for energy harvesting in nanoelectronics• Routes for energy harvesting in nanoelectronics
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For important contributions many thanks to
Transport:F H t S K li S Gö f t A D i LF. Hartmann, S. Kremling, S. Göpfert, A. Dari, L. Gammaitoni
Technology:M. Emmerling, S. Kuhn, T. Steinl, G. Heller, M. Kamp
III-V samples:C. Schneider, S. Höfling, A. Forchel
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Acknowledgement
• Support via EU: SUBTLE & NANOPOWER
• Many thanks for your attention!Many thanks for your attention!
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