lr b6sp - osram...lr b6sp 4 version 1.3 | 2019-10-15 characteristics i f = 140 ma; t s = 25 c...

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LR B6SP 1 Version 1.3 | 2019-10-15 www.osram-os.com Applications LR B6SP Power SIDELED ® Power SIDELED features a compact package with a wide brightness range and high luminous efficiency. Cluster, Button Backlighting Signalling Features: Package: white PLCC-2 package, clear silicone resin Chip technology: Thinfilm Typ. Radiation: 120° (Lambertian emitter) Color: λ dom = 623 nm ( red) Corrosion Robustness Class: 3B Qualifications: AEC-Q102 Qualified ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

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LR B6SP

1 Version 1.3 | 2019-10-15

Produktdatenblatt | Version 1.1 www.osram-os.com

Applications

LR B6SP

Power SIDELED® Power SIDELED features a compact package with a wide brightness range and high luminous efficiency.

— Cluster, Button Backlighting — Signalling

Features: — Package: white PLCC-2 package, clear silicone resin

— Chip technology: Thinfilm

— Typ. Radiation: 120° (Lambertian emitter)

— Color: λdom = 623 nm (● red)

— Corrosion Robustness Class: 3B

— Qualifications: AEC-Q102 Qualified

— ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

LR B6SP

2 Version 1.3 | 2019-10-15

Ordering Information

Type Luminous Intensity 1) Ordering CodeIF = 140 mAIv

LR B6SP-DBFA-1-G3R3 5.6 ... 14.0 cd Q65112A9765

LR B6SP

3 Version 1.3 | 2019-10-15

Maximum RatingsParameter Symbol Values

Operating Temperature Top min. max.

-40 °C110 °C

Storage Temperature Tstg min. max.

-40 °C110 °C

Junction Temperature Tj max. 125 °C

Junction Temperature for short time applications* Tj max. 150 °C

Forward current TS = 25 °C

IF min. max.

5 mA200 mA

Surge Current t ≤ 10 µs; D = 0.005 ; TS = 25 °C

IFS max. 1000 mA

Reverse voltage 2) TS = 25 °C

VR max. 12 V

ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2)

VESD 2 kV

* The median lifetime (L70/B50) for Tj = 150°C is 100h.

LR B6SP

4 Version 1.3 | 2019-10-15

CharacteristicsIF = 140 mA; TS = 25 °C

Parameter Symbol Values

Dominant Wavelength 3) IF = 140 mA

λdom min. typ. max.

620 nm623 nm629 nm

Spectral Bandwidth at 50% Irel,max ∆λ typ. 18 nm

Viewing angle at 50% IV 2φ typ. 120 °

Forward Voltage 4) IF = 140 mA

VF min. typ. max.

1.90 V2.20 V2.50 V

Reverse current 2) VR = 12 V

IR typ. max.

0.01 µA10 µA

Real thermal resistance junction/solderpoint 5) RthJS real typ. max.

40 K / W50 K / W

Electrical thermal resistance junction/solderpoint 5) with efficiency ηe = 40 %

RthJS elec. typ. max.

24 K / W30 K / W

LR B6SP

5 Version 1.3 | 2019-10-15

Brightness Groups

Group Luminous Intensity 1) Luminous Intensity. 1) Luminous Flux 6)

IF = 140 mA IF = 140 mA IF = 140 mAmin. max. typ.Iv Iv ΦV

DB 5.6 cd 7.1 cd 19.9 lm

EA 7.1 cd 9.0 cd 25.3 lm

EB 9.0 cd 11.2 cd 31.7 lm

FA 11.2 cd 14.0 cd 39.6 lm

Forward Voltage Groups

Group Forward Voltage 4) Forward Voltage 4)

IF = 140 mA IF = 140 mAmin. max.VF VF

G3 1.90 V 2.05 V

K3 2.05 V 2.20 V

N3 2.20 V 2.35 V

R3 2.35 V 2.50 V

LR B6SP

6 Version 1.3 | 2019-10-15

Group Name on Label Example: DB-1-G3Brightness Wavelength Forward Voltage

DB 1 G3

LR B6SP

7 Version 1.3 | 2019-10-15

Relative Spectral Emission 6)

Irel = f (λ); IF = 140 mA; TS = 25 °C

LR B6SP

350 400 450 500 550 600 650 700 750 800λ / nm

0.0

0.2

0.4

0.6

0.8

1.0Irel

: Vλ

: red

Radiation Characteristics 6)

Irel = f (ϕ); TS = 25 °CLR B6SP

-100°

-90°

-80°

-70°

-60°

-50°

-40°

-30°-20°

-10° 0° 10° 20° 30° 40° 50° 60° 70° 80° 90°ϕ / °

0.0

0.2

0.4

0.6

0.8

1.0Irel

LR B6SP

8 Version 1.3 | 2019-10-15

Forward current 6)

IF = f(VF); TS = 25 °C

LR B6SP

1.7 1.8 2.0 2.2 2.4VF / V

5

20

40

60

80

100

120

140

160

180

200IF / mA

Relative Luminous Intensity 6), 7)

Iv/Iv(140 mA) = f(IF); TS = 25 °CLR B6SP

5 40 80 120

160

200

IF / mA

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

IVIV(140mA)

LR B6SP

9 Version 1.3 | 2019-10-15

Forward Voltage 6)

ΔVF = VF - VF(25 °C) = f(Tj); IF = 140 mA

LR B6SP

-40 -20 0 20 40 60 80 100 120Tj / °C

-0.3

-0.2

-0.1

0.0

0.1

0.2

0.3∆VF / V

Relative Luminous Intensity 6)

Iv/Iv(25 °C) = f(Tj); IF = 140 mA

LR B6SP

-40 -20 0 20 40 60 80 100 120Tj / °C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4IvIv(25°C)

Dominant Wavelength 6)

Δλdom = λdom - λdom(25 °C) = f(Tj); IF = 140 mALR B6SP

-40 -20 0 20 40 60 80 100 120Tj / °C

-10

-8

-6

-4

-2

0

2

4

6

8∆λ dom / nm

LR B6SP

10 Version 1.3 | 2019-10-15

Max. Permissible Forward CurrentIF = f(T)

0 20 40 60 80 100

Ts [°C]

0

20

40

60

80

100

120

140

160

180

200

220IF [mA]

LR B6SP

: Ts

Permissible Pulse Handling CapabilityIF = f(tp); D: Duty cycle

10-6 10-5 10-4 10-3 0,01 0,1 1 10

Pulse time [s]

0,2

0,4

0,6

0,8

1,0

1,2IF [A]

LR B6SP

: D = 1.0: D = 0.5: D = 0.2: D = 0.1: D = 0.05: D = 0.02: D = 0.01: D = 0.005

Permissible Pulse Handling CapabilityIF = f(tp); D: Duty cycle

10-6 10-5 10-4 10-3 0,01 0,1 1 10

Pulse time [s]

0,2

0,4

0,6

0,8

1,0

1,2IF [A]

LR B6SP

: D = 1.0: D = 0.5: D = 0.2: D = 0.1: D = 0.05: D = 0.02: D = 0.01: D = 0.005

LR B6SP

11 Version 1.3 | 2019-10-15

Dimensional Drawing 8)

Further Information:

Approximate Weight: 86.5 mg

Package marking: Anode

Corrosion test: Class: 3B Test condition: 40°C / 90 % RH / 15 ppm H2S / 14 days (stricter than IEC 60068-2-43)

LR B6SP

12 Version 1.3 | 2019-10-15

Recommended Solder Pad 8)

For superior solder joint connectivity results we recommend soldering under standard nitrogen atmosphere.

LR B6SP

13 Version 1.3 | 2019-10-15

Reflow Soldering ProfileProduct complies to MSL Level 2 acc. to JEDEC J-STD-020E

00

s

OHA04525

50

100

150

200

250

300

50 100 150 200 250 300t

T

˚C

St

t

Pt

Tp240 ˚C

217 ˚C

245 ˚C

25 ˚C

L

Profile Feature Symbol Pb-Free (SnAgCu) Assembly UnitMinimum Recommendation Maximum

Ramp-up rate to preheat*)

25 °C to 150 °C2 3 K/s

Time tSTSmin to TSmax

tS 60 100 120 s

Ramp-up rate to peak*)

TSmax to TP

2 3 K/s

Liquidus temperature TL 217 °C

Time above liquidus temperature tL 80 100 s

Peak temperature TP 245 250 °C

Time within 5 °C of the specified peaktemperature TP - 5 K

tP 10 20 30 s

Ramp-down rate*TP to 100 °C

3 4 K/s

Time25 °C to TP

480 s

All temperatures refer to the center of the package, measured on the top of the component* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

LR B6SP

14 Version 1.3 | 2019-10-15

Taping 8)

LR B6SP

15 Version 1.3 | 2019-10-15

Tape and Reel 9)

Reel DimensionsA W Nmin W1 W2 max Pieces per PU

330 mm 16 + 0.3 / - 0.1 mm 60/100 mm 16.4 + 2 mm 22.4 mm 1200

LR B6SP

16 Version 1.3 | 2019-10-15

Barcode-Product-Label (BPL)

Dry Packing Process and Materials 8)

OHA00539

OSRAM

Moisture-sensitive label or print

Barcode label

Desiccant

Humidity indicator

Barcode label

OSRAM

Please check the HIC immidiately afterbag opening.

Discard if circles overrun.Avoid metal contact.

WET

Do not eat.

Comparatorcheck dot

parts still adequately dry.

examine units, if necessary

examine units, if necessary

5%

15%

10%bake units

bake units

If wet,

change desiccant

If wet,

Humidity IndicatorMIL-I-8835

If wet,

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or equiv

alent p

rocessin

g (peak p

ackage

2. Afte

r th

is b

ag is o

pened, devic

es that w

ill b

e subje

cted to

infrare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body tem

p.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD

-033 fo

r bake p

rocedure

.

Flo

or tim

e see b

elow

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Flo

or tim

e 1

Year

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICO

NDUCTORS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel

Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.

LR B6SP

17 Version 1.3 | 2019-10-15

Schematic Transportation Box 8)

OHA02044

PACKVAR:

R077Additional TEXT

P-1+Q-1

Multi TOPLED

Muste

r

OSRAM Opto

Semiconductors

(6P) BATCH NO:

(X) PROD NO:

10

(9D) D/C:

11(1T) LOT NO:

210021998

123GH1234

024 5

(Q)QTY: 2000

0144

(G) GROUP:

260 C RT240 C R

3

220 C R

MLBin3:Bin2: Q

-1-20

Bin1: P-1-20

LSY T6762

2a

Temp ST

R18DEMY

PACKVAR:

R077Additional TEXT

P-1+Q-1

Multi TOPLED

Muste

r

OSRAM Opto

Semiconductors

(6P) BATCH NO:

(X) PROD NO:

10

(9D) D/C:

11(1T) LOT NO:

210021998

123GH1234

024 5

(Q)QTY: 2000

0144

(G) GROUP:

260 C RT240 C R

3

220 C R

MLBin3:Bin2: Q

-1-20

Bin1: P-1-20

LSY T6762

2a

Temp ST

R18DEMY

OSRAM

Packing

Sealing label

Barcode label

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or e

quivale

nt pro

cessing (p

eak package

2. Afte

r th

is b

ag is o

pened,

devices th

at will

be s

ubjecte

d to in

frare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body te

mp.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD-0

33 for bake p

rocedure

.

Floor

time s

ee belo

w

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Floor

time

1 Y

ear

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICONDUCTO

RS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel

Barcode label

Dimensions of Transportation BoxWidth Length Height

349 ± 5 mm 349 ± 5 mm 38 ± 5 mm

LR B6SP

18 Version 1.3 | 2019-10-15

Chip Technology: P: power performance

Encapsulant Type / Lens Properties S: Silicone

Wavelength Emission Color (λdom typ.) S: 633 nm super red Y: 587 nm yellow A: 617 nm amber R: 625 nm red

L: Light emitting diode

Package Type B: Molded Toplooker, Bare

leadframe based, w/o reflector

Lead / Package Properties 6: folded leads

Type Designation System

L S B 6 S P

LR B6SP

19 Version 1.3 | 2019-10-15

NotesThe evaluation of eye safety occurs according to the standard IEC 62471:2006 (photo biological safety of lamps and lamp systems). Within the risk grouping system of this IEC standard, the device specified in this data sheet falls into the class exempt group (exposure time 10000 s). Under real circumstances (for expo-sure time, conditions of the eye pupils, observation distance), it is assumed that no endangerment to the eye exists from these devices. As a matter of principle, however, it should be mentioned that intense light sources have a high secondary exposure potential due to their blinding effect. When looking at bright light sources (e.g. headlights), temporary reduction in visual acuity and afterimages can occur, leading to irrita-tion, annoyance, visual impairment, and even accidents, depending on the situation.

Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There-fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810.

For further application related information please visit www.osram-os.com/appnotes

LR B6SP

20 Version 1.3 | 2019-10-15

Disclaimer

Attention please!The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances.For information on the types in question please contact our Sales Organization.If printed or downloaded, please find the latest version on the OSRAM OS website.

PackingPlease use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.

Product and functional safety devices/applications or medical devices/applicationsOSRAM OS components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices.OSRAM OS products are not qualified at module and system level for such application.

In case buyer – or customer supplied by buyer – considers using OSRAM OS components in product safety devices/applications or medical devices/applications, buyer and/or customer has to inform the local sales partner of OSRAM OS immediately and OSRAM OS and buyer and /or customer will analyze and coordi-nate the customer-specific request between OSRAM OS and buyer and/or customer.

LR B6SP

21 Version 1.3 | 2019-10-15

Glossary1) Brightness: Brightness values are measured during a current pulse of typically 25 ms, with an internal

reproducibility of ±8 % and an expanded uncertainty of ±11 % (acc. to GUM with a coverage factor of k = 3).

2) Reverse Operation: Reverse Operation of 10 hours is permissible in total. Continuous reverse opera-tion is not allowed.

3) Wavelength: The wavelength is measured at a current pulse of typically 25 ms, with an internal repro-ducibility of ±0.5 nm and an expanded uncertainty of ±1 nm (acc. to GUM with a coverage factor of k = 3).

4) Forward Voltage: The forward voltage is measured during a current pulse of typically 8 ms, with an internal reproducibility of ±0.05 V and an expanded uncertainty of ±0.1 V (acc. to GUM with a coverage factor of k = 3).

5) Thermal Resistance: Rth max is based on statistic values (6σ).6) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic-

es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif-fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.

7) Characteristic curve: In the range where the line of the graph is broken, you must expect higher differ-ences between single devices within one packing unit.

8) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm.

9) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.

LR B6SP

22 Version 1.3 | 2019-10-15

Revision HistoryVersion Date Change

1.3 2019-10-14 Features Ordering Information Electro - Optical Characteristics (Diagrams) Disclaimer

LR B6SP

23 Version 1.3 | 2019-10-15

Published by OSRAM Opto Semiconductors GmbH Leibnizstraße 4, D-93055 Regensburg www.osram-os.com © All Rights Reserved.