layout technique for double-gate silicon nanowire fet with...
TRANSCRIPT
Layout Technique for Double-Gate Silicon Nanowire FET with an Efficient
Sea-of-Tiles Architecture
Shashikanth Bobba
Prof. Giovanni De Micheli March 25, 2013
Pierre-Emmanuel, Jian Zhang, Luca, Michele, Davide, Prof. Yusuf Leblebici
Functionally Enhanced Device
Source
Drain
Gate
High-K Metal Gate
Gate Source Drain
Tri-gate aka FinFET Vertically stacked SiNW FET
Source Drain Gate
PG
CG S D C
ontr
ol g
ate
Polarity gate
Sour
ce
Dra
in
Sour
ce
32nm 16nm 10nm
Enhanced Functionality
Double-gate Silicon Nanowire FET
! Dynamic control on the polarity of the device
! Promising feature for future reconfigurable circuits
! Ambipolar logic circuits
CG PG
S
D
CG S
D
CG S
D
p-FET
n-FET
PG
CG S D
Con
trol
gat
e Polarity gate
Sour
ce
Dra
in
Ambipolar Logic Circuits ! Circuits based on double gate ambipolar transistors with
controllable polarity (CNFET, SiNW FET, Graphene, …)
! Optimal for XOR and XNOR dominated circuits
XOR2
Only 4 transistors
M-H. Ben Jamaa, PhD Thesis
CNT-DR8F
O’Connor, ICECS 07
ULM (5,3)
K. Mohanram, DAC 12
Fewer transistors for XOR operation
Every transistor has two gates to route
Motivation
XOR2 ??
Physical Design Challenges
Manufacturing
Design and Architecture
Physical Synthesis
Logic Synthesis
DFM
Verification
Arithmetic circuits
Reconfigurable blocks
Universal logic modules
CNFET SiNW FET Graphene MoS2
E D A
! Can we use existing layout techniques?
! Logic bricks for improved Yield
CG PG
S
D
! Introduction
! Layout Technique for DG-SiNW FET " Motivation
" Layout algorithm for XOR embedded Boolean functions
! Sea-of-Tiles
! Simulation Results
! Conclusion
Outline
Symbolic layouts : Dumbell-stick diagrams ! Need for new symbolic layouts for ambipolar circuits
!"#$%&&'()*+,,
!"#$%&%'(")*#&"&$+)
!"#$%"&'()$*+',"##*,$*-'$"(*$.*%'
!"#$%&%'(")+"(,*&$+)
/"&)%0$1'()$*+',"##*,$*-'$"(*$.*%'
Con
trol
gat
e
Polarity gate
Sour
ce
Dra
in
Layout technique for Unate logic functions ! Negative Unate functions: NAND, NOR, AOI, OAI
! Polarity gates are biased to either Vdd or Gnd
-'./0"1,232!,451%,
Vdd
A
A
Vdd
Gnd
Gnd
B
B
Out
-$./)($0)*(.#"&'/)+#'0)1(")234)#$5)264)
A
A
B
B
Vdd
Gnd Out
6,780..9%:;<)5&#+"#7)
t1 t2
t3
t4
t1 t2
t3
t4
t1 t2
t3 t4
Layout technique for Binate logic functions
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678,451%,?@-=)%'/.0).#/(,')
4(A0.)#**"(#;B)
!"#$%&%'(")+"(,*&$+)
?(7*.0C)"(,:$+)
A
Y
B
B A
A
B
B A
t1 t2
t3 t4
t1 t2
t3 t4
t2 t4
t1 t3
Complex gates with embedded XOR/XNOR
#D !"#$%&%'(")+"(,*&$+))
))))))6,780..9%:;<)5&#+"#7)
F1 = (A + B)(C + D)
Gnd B
Gnd A
CD
C D
Vdd A B
Vdd
C D
C D
F1
t1
t2
t3
t4
t5
t6
t7
t8
group D : {t4, t6}
group D : {t3, t5}
group Vdd : {t7, t8} group Gnd : {t1, t2}
8D))))!"#$%&%'(")*#&"&$+);D))))!"#$%&%'(")("50"&$+)
5D))))!"#$%&%'(");B#&$&$+)
Layout Extraction
6,780..9%:;<)5&#+"#7)
!"#$%&%'(")%&E&$+)F)G#/(,')+0$0"#:($)
VDD
GND
! Introduction
! Layout Technique for DG-SiNW FET
! Sea-of-Tiles " Tiles as basic blocks
" Optimal Tile
" Power distribution for SoT
! Simulation Results
! Conclusion
Outline
Sea-of-Tiles (SoT)
Layout regularity with Tiles
232!-, 678-,
!H()'"#$%&%'(")*#&"%)+"(,*05)'(+0'B0")
9.&%,
Sea-of-Tiles (SoT)
! Gate to Tile mapping
:51%(, /;, /-, /<, /=, />, /?, :;, :-, 4;, 4-,
6@A-, I$5) -,') J55) I$5) -,') J55) K) KL) ML) M)
6/@A-, I$5) -,') J55) I$5) -,') J55) K) KL) M) ML)
25/B-, -,') J55) -,') -,') 9) I$5) K) M) I$5) J55)
2@A-, J55) 9) -,') -,') I$5) -,') K) M) I$5) J55)
C/D-6, J55) -,') J55) I$5) -,') I$5) K) K) I$5) J55)
E"F, -N) J55) -O) -O) I$5) -N) K) -N) I$5) J55)
Various logic Tiles as basic building blocks
9.&%:-,
9.&%:;,
9.&%:<,
9.&%:;G-, 2314%0-'50&*6'
3
Design flow for determining the Optimal Tile
Generate Tiles
Synopsys Design Compiler Library of Tiles
TECHNOLOGY MAPPING
Physical Synthesis onto
Sea-of-Tiles
Benchmark Circuits
Area
Design flow for determining the Optimal Tile
Generate Tiles
Synopsys Design Compiler Library of Tiles
TECHNOLOGY MAPPING
Physical Synthesis onto
Sea-of-Tiles
Benchmark Circuits
Area
P
P
K M
+
A
A
+
?
A
+
+ P
TileG2 #1 TileG2 #2
Unmapped active area
Result: Impact on Area
9.&%:-,9.&%:;, 9.&%:<,9.&%:;G-,
Area across various benchmarks 2@A#5&.H%B
,3A%5 ,
- 14% - 16%
! TileG2 and TileG1h2 optimal for mapping logic gates, with respect to reduced routing complexity thereby reducing in the overall active area
Sea-of-Tiles Power Distribution… VDD
VDD
GND
GND
Too much requirements in wiring
NAND XOR
Vdd
A
A
Vdd
Gnd
B
B
Y
NAND2 XOR2
Source: S. Bobba et al, NANOARCH’12
Sea-of-Tiles Power Distribution VDD
VDD
GND
GND
GND
GND
GND
GND
VDD VDD VDD
Lower wiring requirements
Source: S. Bobba et al, NANOARCH’12
! Introduction
! Layout Technique for DG-SiNW FET
! Sea-of-Tiles
! Simulation Results " Arithmetic Circuits
" Circuit level Benchmarking
! Conclusion
Outline
Case study: Arithmetic Circuits
Arithmetic Cell Library Logic Gates (FO4 delay)
0 100 200 300 400 500 600 700 800
5-bit ripple-carry adder
16-bit carry-select adder
(29, 3)-compressor
(11, 2)-reduction tree (16 x 16 MAC)
Wallace tree (54 x 54 multiplier)
(31, 5) Parallel counter
Area 22.7%
22%
40%
45%
38%
22%
PG
CG S D
Con
trol
gat
e
Polarity gate
Sour
ce
Dra
in
Sour
ce
0 10 20 30
5-bit ripple-carry adder
16-bit carry-select adder
(29, 3)-compressor
(11, 2)-reduction tree (16 x 16 MAC)
Wallace tree (54 x 54 multiplier)
(31, 5) Parallel counter
Case study: Arithmetic Circuits
Arithmetic Cell Library Logic Gates
Delay 66%
71.7%
66%
57.6%
61.8%
63.8%
2.8x improvement
Circuit Level Benchmarking
Generate Tiles
Synopsys Design Compiler Encouter Library
Characterizer TECHNOLOGY MAPPING
Physical Synthesis onto
Sea-of-Tiles
Benchmark Circuits
Delay
TCAD-based table model
Leakage
1.8x improvement
! Introduction
! Layout Technique for DG-SiNW FET
! Sea-of-Tiles
! Simulation Results
! Conclusion
Outline
Conclusion
! Proposed a novel layout methodology and algorithm for Boolean functions with embedded XOR
! Showed an efficient implementation of Ambipolar circuits with Sea-of-Tiles design methodology
# Area optimal tiles TileG2 and TileG1h2
! Circuit Level Benchmarking
# Maximum improvement for Arithmetic circuits (2.8x)
# Reduction in Leakage power (16x)
Thank You