july 10, 2011mtm wg - itrs erd - san francisco1 “ more-than-moore ” erd m. brillouët – u-in...

July 10, 2011 MtM WG - ITRS ERD - San Francisco 1

“More-than-Moore” ERD

M. Brillouët – U-In Chung – S. Das – A. Ionescu+ H. Bennett – Y. Obeng


2011 “More-than-Moore” ERD & functions

LO

RF front-endIntermediate level

function

Lower level functions

NEMS nanoresonator

filter oscillator mixer

011001010…

control

rf wave

Higher level function

spin-torque oscillator

C-based electronics

antenna etc.

LNA

LO

ADC

PA DAC

switch

etc.


Discussion

• functions / devices addressed are frozen for 2011:– graphene rf transistors

– STO

– NEMS resonators

– rf mixers

• however:– the links between the different items and the functions

should be more explicit in the text

– the coherence between the sections could be improved

– the number of references is high (52 ref. in total)

– not every item fulfils the criteria of publication by ≥ 2 groupsor extensively by 1 group

• figure frozen: no future change• text could be improved (v2 around Aug. 15)• is there an ERD basecamp?


Graphene / C-based electronicsfor rf applications

U-In Chung – M. Brillouët


Graphene RF Transistors

Key figures of merit of Graphene RF Transistor

Possibility of THz cutoff frequency- Sub-100-nm transistors were fabricated using nanowire gate.- High Fermi velocity of carriers in graphene, resulting in high drift velocity (~ 4 x 107 cm/s) in channel, makes fT ~ 1THz for sub 70 nm channel length device


Highest cutoff frequency of Current Devices- GaAs mHEMT with a 20-nm gate: 660 GHz- Si MOSFET with a 29-nm gate: 485 GHz. - GaAs pHEMT with a 100-nm gate: 152 GHz.

Left: RF Transistors on 6 inch waferRight: Single RF Transistor

SAMSUNG [3]

F.Schwierz, “Graphene Transistors,” Nature Nanotechnology 5, 487 (2010)

UCLA [1]

IBM (Science)

Comparison to Current Devices


Needs and Destination of next generation mobile

Low Noise

Amplifier

Mixer

Potential applications


Spin-Torque nano-oscillators

U-In Chung – M. Brillouët


STOKey figures of merit of spin torque oscillator

1. frequency tunability ( 0.1 GHz ~ 40GHz or more) - frequency can be tuned by external magnetic field or spin torque current - frequency can also be tuned by magnetic materials and structures

2. compact size (nanometer-sized oscillator) - cost effective

Frequency tuning by different materials

Domain wall, Vortex <1GHz

GMR and MTJ Free & Pinned, <20GHz

AF exchange bias, SAF <40GHz

Additional H field >40 GHz

STO size : ~ 100 ⅹ 100 nm2


Crystal oscillator

VCO : L – high K

RF MEMS STO

Size < 1 cm3 < 1mm2 < 1mm2 < 1um2

Q 104 to 106 100 (enhanced inductor)

1000 >1000 (GMR)

Output Power 40mW1mW

(0 dBm)1mW

(0 dBm)<

1uW(currently)

Phase noise -170dBc -115 dBc -110 dBc N.A.

Power consumptio

[email protected]

0.4mA @ 0.82V

35mA @ 3.3V

1~5mA @ 1V

Tunable range

0% 10% 1% 10~100%

Agility microseconds nanoseconds

Comparison to existing oscillator technologies


R&D trends

eliminate the need of external H perpendicular polarizer + in-plane free layer

magnetic vortex

wavy spin torque

increase output power phase-locked synchronized STO array

lower phase noise / reduce linewidth


Discussion

• “spin transfer torque” or “spin torque transfer”?Both can be used. Use preferably STO= “spin transfer oscillators” or “spin torque oscillators” [NIST]

• need to reduce the number of references? (16 ref.)


NEMS resonators

A. Ionescu – M. Brillouët


NEM resonator

• integrate off-chip RF oscillator with the same quality as a quartz oscillator:– Q > 104 – 105 (Q of LC tank <<103)– T stability < 1 ppm/°C

• capacitively transduced resonator– figure of merit f x Q– scaling-up f by:

• dimension• stiffness• mass

– Q scaled down with dimensions due to dissipation mechanisms(gas friction, the clamping and surface losses)

– non-linearities and noise increase with dimension downscaling– impedance matching


NEM resonator

Parameter Scaling rule

mass k 3

stiffness k

resonant frequency k-1

mass responsivity k -4

energy consumption ≈ k 3

Scaling rules for MEMS

+ stiffer materials

K. L. Ekinci et al., Rev. Scient. Inst. 76, 061101(2005)

• Si NW• not-Si NW (III-V…)• CNT• graphene


NEMS resonators

• resonant gate

• resonant bodyC. Durand et al. IEEE EDL 29 494 (2008)

D. Grogg et al. IEDM 2008 663 D. Grogg et al. FREQ 2009 520


Discussion

• need to reduce the number of references? (21 ref.)• set a better boundary between “classical” MEMS

resonators and emerging mechanical devices• need to add state-of-the-art and projected values of FoM

for “classical” MEMS resonators


NDR for mixers

S. Das – M. Brillouët


RTD & SET for mixer

Benefits• high speed / frequency (sub-ps switching time)• wide operating temperature• reduced noise figure due to RTD shot noise suppression

Issues• use of III-V (InGaAs) [issue from the past?] variability

RTD

SET

[same comments]


Graphene for rf mixer

full-wave rectifier → frequency doubling

T. Palacios et al. IEEE Comm. Mag. 48 122 (2010)

if...

→ no odd-order inter-modulation

frequency mixer


Discussion

• “all-in-one nano-radio” mentioned in the text, but further inclusion should be addressed in 2012


not included in 2011 ITRS

M. Brillouët


Graphene for rf switch

rf switch

high current capability(>7 kA/cm²)

high Rc

K.M. Milaninia et al. APL 95 183105 (2009)


Discussion

• for 2012:– include “Technology fusion” in the introduction?

i.e., describe the broader scope of the MtM ERD– include ERD MEMS / NEMS linked to the MEMS TWG

july 10, 2011mtm wg - itrs erd - san francisco1 “ more-than-moore ” erd m. brillouët – u-in...

Documents

erd basecamp

moore erd functionslorf

nm gate

nm transistors

frequency tunability

nanowire gate

single rf transistorsamsung

high drift velocity