Characteristic enhancement of the blue LED chip by the growth and fabrication on patterned sapphire (0 0 0 1) substrate

Seong-Muk Jeong , SuthanKissinger , Dong-WookKim , SeungJaeLee , Jin-SooKim , Haeng-Keun Ahn , Cheul-RoLee

Journal of Crystal Growth 312 (2010) 258–262

D.J. Sun

Outline• Introduction

• Experiment

• Results and discussion

• Conclusion

• References

Introduction

• In this study, we describe the fabrication, optical and electrical properties of InGaN/GaN LEDs on lens-shaped patterened sapphire substrate (PSS) .

• GaN-based LEDs prepared on PSS have increased light extraction efficiency by scattering and also reduce the threading dislocation(TD) density .

Experiment

Experiment

Hight ： 1.5µmDiameter ： 5.8µmDistance ： 3.7µm

Results and discussion

Fig. 4. SEM micrographs of the GaN surface grown on the lens-shaped PSS for the growth time of (a) 10 min, (b) 20 min, (c) 30 min, (d) 40 min, (e) 60 min , and (f) 80 min.

Results and discussion