jan m. rabaey anantha chandrakasan borivoje nikolicbaccaran/rabaey/chapter05.pdf · ·...
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EE1411
© Digital Integrated Circuits2nd Inverter
Digital Integrated Digital Integrated CircuitsCircuitsA Design PerspectiveA Design Perspective
The InverterThe Inverter
Jan M. RabaeyAnantha ChandrakasanBorivoje Nikolic
July 30, 2002
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EE1412
© Digital Integrated Circuits2nd Inverter
The CMOS Inverter: A First GlanceThe CMOS Inverter: A First GlanceVDD
Vin Vout
CL
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EE1413
© Digital Integrated Circuits2nd Inverter
CMOS InvertersCMOS Inverters
Polysilicon
InOut
Metal1
VDD
GND
PMOS
NMOS
2λ
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EE1414
© Digital Integrated Circuits2nd Inverter
CMOS InverterCMOS InverterFirstFirst--Order DC AnalysisOrder DC Analysis
VDD VDD
Vin = 1
Vout Vin = 0Vout
VOL = 0VOH = VDD
VM = f(Rn, Rp)
Rn
Rp
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EE1415
© Digital Integrated Circuits2nd Inverter
CMOS Inverter: CMOS Inverter: First Order Transient ResponseFirst Order Transient Response
VDD
Vout
Vin = VDD
Ron
CL
tpHL = f(Ron.CL)= 0.69 RonCL
t
Vout
VDD
RonCL
1
0.5
ln(0.5)
0.36
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EE1416
© Digital Integrated Circuits2nd Inverter
Voltage TransferVoltage TransferCharacteristicCharacteristic
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EE1417
© Digital Integrated Circuits2nd Inverter
PMOS Load LinesPMOS Load Lines
VDSp
IDp
VGSp=-2.5
VGSp=-1VDSp
IDnVin=0
Vin=1.5
Vout
IDnVin=0
Vin=1.5
Vin = VDD+VGSpIDn = - IDp
Vout = VDD+VDSp
Vout
IDnVin = VDD+VGSpIDn = - IDp
Vout = VDD+VDSp
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EE1418
© Digital Integrated Circuits2nd Inverter
CMOS Inverter Load CharacteristicsCMOS Inverter Load Characteristics
IDn
Vout
Vin = 2.5
Vin = 2
Vin = 1.5
Vin = 0
Vin = 0.5
Vin = 1
NMOS
Vin = 0
Vin = 0.5
Vin = 1Vin = 1.5
Vin = 2
Vin = 2.5
Vin = 1Vin = 1.5
PMOS
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EE1419
© Digital Integrated Circuits2nd Inverter
CMOS Inverter VTCCMOS Inverter VTC
Vout
Vin0.5 1 1.5 2 2.5
0.5
11.
52
2.5
NMOS resPMOS off
NMOS satPMOS sat
NMOS offPMOS res
NMOS satPMOS res
NMOS resPMOS sat
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EE14110
© Digital Integrated Circuits2nd Inverter
Switching Threshold as a function Switching Threshold as a function of Transistor Ratioof Transistor Ratio
100
101
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
MV
(V)
Wp
/Wn
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EE14111
© Digital Integrated Circuits2nd Inverter
Determining VDetermining VIHIH and Vand VILIL
VOH
VOL
Vin
Vout
VM
VIL VIH
A simplified approach
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EE14112
© Digital Integrated Circuits2nd Inverter
Inverter GainInverter Gain
0 0.5 1 1.5 2 2.5-18
-16
-14
-12
-10
-8
-6
-4
-2
0
Vin
(V)
ga
in
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EE14113
© Digital Integrated Circuits2nd Inverter
Gain as a function of VDDGain as a function of VDD
0 0.05 0.1 0.15 0.20
0.05
0.1
0.15
0.2
Vin (V)
Vo
ut (
V)
0 0.5 1 1.5 2 2.50
0.5
1
1.5
2
2.5
Vin (V)
Vo
ut(V
)
Gain=-1
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EE14114
© Digital Integrated Circuits2nd Inverter
Simulated VTCSimulated VTC
0 0.5 1 1.5 2 2.50
0.5
1
1.5
2
2.5
Vin
(V)
Vo
ut(V
)
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EE14115
© Digital Integrated Circuits2nd Inverter
Impact of Process VariationsImpact of Process Variations
0 0.5 1 1.5 2 2.50
0.5
1
1.5
2
2.5
Vin
(V)
Vou
t(V)
Good PMOSBad NMOS
Good NMOSBad PMOS
Nominal
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EE14116
© Digital Integrated Circuits2nd Inverter
Propagation DelayPropagation Delay
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EE14117
© Digital Integrated Circuits2nd Inverter
CMOS Inverter Propagation DelayCMOS Inverter Propagation DelayApproach 1Approach 1
VDD
Vout
Vin = VDD
CLIav
tpHL = CL Vswing/2
Iav
CL
kn VDD~
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EE14118
© Digital Integrated Circuits2nd Inverter
CMOS Inverter Propagation DelayCMOS Inverter Propagation DelayApproach 2Approach 2
VDD
Vout
Vin = VDD
Ron
CL
tpHL = f(Ron.CL)= 0.69 RonCL
t
Vout
VDD
RonCL
1
0.5
ln(0.5)
0.36
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EE14119
© Digital Integrated Circuits2nd Inverter
CMOS InvertersCMOS Inverters
Polysilicon
InOut
Metal1
VDD
GND
PMOS
NMOS
1.2 µm=2λ
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EE14120
© Digital Integrated Circuits2nd Inverter
0 0.5 1 1.5 2 2.5
x 10-10
-0.5
0
0.5
1
1.5
2
2.5
3
t (sec)
Vo
ut(V
)
Transient ResponseTransient Response
tp = 0.69 CL (Reqn+Reqp)/2
?
tpLHtpHL
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EE14121
© Digital Integrated Circuits2nd Inverter
Design for PerformanceDesign for Performance
Keep capacitances smallIncrease transistor sizes
watch out for self-loading!Increase VDD (????)
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EE14122
© Digital Integrated Circuits2nd Inverter
Delay as a function of VDelay as a function of VDDDD
0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.41
1.5
2
2.5
3
3.5
4
4.5
5
5.5
VDD
(V)
t p(n
orm
aliz
ed
)
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EE14123
© Digital Integrated Circuits2nd Inverter
2 4 6 8 10 12 142
2.2
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8x 10
-11
S
t p(s
ec)
Device SizingDevice Sizing
(for fixed load)
Self-loading effect:Intrinsic capacitancesdominate
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EE14124
© Digital Integrated Circuits2nd Inverter
1 1.5 2 2.5 3 3.5 4 4.5 53
3.5
4
4.5
5x 10
-11
β
t p(s
ec)
NMOS/PMOS ratioNMOS/PMOS ratio
tpLH tpHL
tp β = Wp/Wn
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EE14125
© Digital Integrated Circuits2nd Inverter
Impact of Rise Time on DelayImpact of Rise Time on Delayt p
HL(
nsec
)0.35
0.3
0.25
0.2
0.15
trise (nsec)10.80.60.40.20
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EE14126
© Digital Integrated Circuits2nd Inverter
Inverter SizingInverter Sizing
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EE14127
© Digital Integrated Circuits2nd Inverter
Inverter ChainInverter Chain
CL
If CL is given:- How many stages are needed to minimize the delay?- How to size the inverters?
May need some additional constraints.
In Out
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EE14128
© Digital Integrated Circuits2nd Inverter
Inverter DelayInverter Delay
• Minimum length devices, L=0.25µm• Assume that for WP = 2WN =2W
• same pull-up and pull-down currents• approx. equal resistances RN = RP• approx. equal rise tpLH and fall tpHL delays
• Analyze as an RC network
WNunit
Nunit
unit
PunitP RR
WWR
WWRR ==
≈
=
−− 11
tpHL = (ln 2) RNCL tpLH = (ln 2) RPCLDelay (D):
2W
W
unitunit
gin CWWC 3=Load for the next stage:
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EE14129
© Digital Integrated Circuits2nd Inverter
Inverter with LoadInverter with Load
Load (CL)
Delay
Assumptions: no load -> zero delay
CL
tp = k RWCL
RW
RW
Wunit = 1
k is a constant, equal to 0.69
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EE14130
© Digital Integrated Circuits2nd Inverter
Inverter with LoadInverter with Load
Load
Delay
Cint CL
Delay = kRW(Cint + CL) = kRWCint + kRWCL = kRW Cint(1+ CL /Cint)= Delay (Internal) + Delay (Load)
CN = Cunit
CP = 2Cunit
2W
W
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EE14131
© Digital Integrated Circuits2nd Inverter
Delay FormulaDelay Formula
( )
( ) ( )γ/1/1
~
0int ftCCCkRt
CCRDelay
pintLWp
LintW
+=+=
+
Cint = γCgin with γ ≈ 1f = CL/Cgin - effective fanoutR = Runit/W ; Cint =WCunittp0 = 0.69RunitCunit
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EE14132
© Digital Integrated Circuits2nd Inverter
Apply to Inverter ChainApply to Inverter Chain
CL
In Out
1 2 N
tp = tp1 + tp2 + …+ tpN
+ +
jgin
jginunitunitpj C
CCRt
,
1,1~γ
LNgin
N
i jgin
jginp
N
jjpp CC
CC
ttt =
+== +
=
+
=∑∑ 1,
1 ,
1,0
1, ,1
γ
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EE14133
© Digital Integrated Circuits2nd Inverter
Optimal Tapering for Given Optimal Tapering for Given NN
Delay equation has N - 1 unknowns, Cgin,2 – Cgin,N
Minimize the delay, find N - 1 partial derivatives
Result: Cgin,j+1/Cgin,j = Cgin,j/Cgin,j-1
Size of each stage is the geometric mean of two neighbors
- each stage has the same effective fanout (Cout/Cin)- each stage has the same delay
1,1,, +−= jginjginjgin CCC
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EE14134
© Digital Integrated Circuits2nd Inverter
Optimum Delay and Number of Optimum Delay and Number of StagesStages
1,/ ginLN CCFf ==
When each stage is sized by f and has same eff. fanout f:
N Ff =
( )γ/10N
pp FNtt +=
Minimum path delay
Effective fanout of each stage:
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EE14135
© Digital Integrated Circuits2nd Inverter
ExampleExample
CL= 8 C1
In Out
C11 f f2
283 ==f
CL/C1 has to be evenly distributed across N = 3 stages:
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EE14136
© Digital Integrated Circuits2nd Inverter
Optimum Number of StagesOptimum Number of Stages
For a given load, CL and given input capacitance CinFind optimal sizing f
( )
+=+=
fffFt
FNtt pNpp lnln
ln1/ 0/1
0γ
γγ
0ln
1lnln2
0 =−−
⋅=∂
∂
fffFt
ft pp γ
γ
For γ = 0, f = e, N = lnF
fFNCfCFC in
NinL ln
ln with ==⋅=
( )ff γ+= 1exp
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EE14137
© Digital Integrated Circuits2nd Inverter
Optimum Effective Optimum Effective FanoutFanout ffOptimum f for given process defined by γ
( )ff γ+= 1exp
fopt = 3.6for γ=1
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EE14138
© Digital Integrated Circuits2nd Inverter
Impact of SelfImpact of Self--Loading on Loading on tptp
1.0 3.0 5.0 7.0u
0.0
20.0
40.0
60.0
u/ln
(u)
x=10
x=100
x=1000
x=10,000
No Self-Loading, γ=0 With Self-Loading γ=1
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EE14139
© Digital Integrated Circuits2nd Inverter
Normalized delay function of Normalized delay function of FF
( )γ/10N
pp FNtt +=
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EE14140
© Digital Integrated Circuits2nd Inverter
Buffer DesignBuffer Design
1
1
1
1
8
64
64
64
64
4
2.8 8
16
22.6
N f tp
1 64 65
2 8 18
3 4 15
4 2.8 15.3
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EE14141
© Digital Integrated Circuits2nd Inverter
Power DissipationPower Dissipation
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EE14142
© Digital Integrated Circuits2nd Inverter
Where Does Power Go in CMOS?Where Does Power Go in CMOS?• Dynamic Power Consumption
• Short Circuit Currents
• Leakage
Charging and Discharging Capacitors
Short Circuit Path between Supply Rails during Switching
Leaking diodes and transistors
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EE14143
© Digital Integrated Circuits2nd Inverter
Dynamic Power DissipationDynamic Power Dissipation
Energy/transition = CL * Vdd2
Power = Energy/transition * f = CL * Vdd2 * f
Need to reduce CL, Vdd, and f to reduce power.
Vin Vout
CL
Vdd
Not a function of transistor sizes!
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EE14144
© Digital Integrated Circuits2nd Inverter
Modification for Circuits with Reduced Swing
CL
Vdd
Vdd
Vdd -Vt
E0 1→ CL Vdd Vdd Vt–( )••=
Can exploit reduced swing to lower power(e.g., reduced bit-line swing in memory)
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EE14145
© Digital Integrated Circuits2nd Inverter
Adiabatic Charging
22
2
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EE14146
© Digital Integrated Circuits2nd Inverter
Adiabatic Charging
![Page 47: Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolicbaccaran/Rabaey/chapter05.pdf · · 2004-02-01Digital Integrated Circuits 30](https://reader031.vdocuments.site/reader031/viewer/2022012313/5ab9ed2d7f8b9ac10d8ec93e/html5/thumbnails/47.jpg)
EE14147
© Digital Integrated Circuits2nd Inverter
Node Transition Activity and PowerNode Transition Activity and PowerConsider switching a CMOS gate for N clock cycles
EN CL Vdd• 2 n N( )•=
n(N): the number of 0->1 transition in N clock cycles
EN : the energy consumed for N clock cycles
Pavg N ∞→lim
ENN
-------- fclk•= n N( )N
------------N ∞→
lim C•
LVdd•
2fclk•=
α0 1→n N( )
N------------
N ∞→lim=
Pavg = α0 1→ C•L
Vdd• 2 fclk•
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EE14148
© Digital Integrated Circuits2nd Inverter
Transistor Sizing for Minimum Transistor Sizing for Minimum EnergyEnergy
Goal: Minimize Energy of whole circuitDesign parameters: f and VDD
tp ≤ tpref of circuit with f=1 and VDD =Vref
1Cg1
In
fCext
Out
TEDD
DDp
pp
VVVt
fFftt
−∝
++
+=
0
0 11γγ
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EE14149
© Digital Integrated Circuits2nd Inverter
Transistor Sizing (2)Transistor Sizing (2)Performance Constraint (γ=1)
Energy for single Transition( ) ( ) 1
3
2
3
2
0
0 =+
++
−
−=
+
++
=F
fFf
VVVV
VV
FfFf
tt
tt
TEDD
TEref
ref
DD
refp
p
pref
p
( )( )[ ]
+++
=
+++=
FFf
VV
EE
FfCVE
ref
DD
ref
gDD
422
112
12 γ
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EE14150
© Digital Integrated Circuits2nd Inverter
1 2 3 4 5 6 70
0.5
1
1.5
2
2.5
3
3.5
4
f
vdd
(V)
1 2 3 4 5 6 70
0.5
1
1.5
f
norm
aliz
ed e
nerg
y
Transistor Sizing (3)Transistor Sizing (3)
F=1
2
5
10
20
VDD=f(f) E/Eref=f(f)
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EE14151
© Digital Integrated Circuits2nd Inverter
Short Circuit CurrentsShort Circuit Currents
Vin Vout
CL
Vdd
I VD
D (m
A)
0.15
0.10
0.05
Vin (V)5.04.03.02.01.00.0
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EE14152
© Digital Integrated Circuits2nd Inverter
How to keep ShortHow to keep Short--Circuit Currents Low?Circuit Currents Low?
Short circuit current goes to zero if tfall >> trise,but can’t do this for cascade logic, so ...
![Page 53: Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolicbaccaran/Rabaey/chapter05.pdf · · 2004-02-01Digital Integrated Circuits 30](https://reader031.vdocuments.site/reader031/viewer/2022012313/5ab9ed2d7f8b9ac10d8ec93e/html5/thumbnails/53.jpg)
EE14153
© Digital Integrated Circuits2nd Inverter
Minimizing ShortMinimizing Short--Circuit PowerCircuit Power
0 1 2 3 4 50
1
2
3
4
5
6
7
8
tsin
/tsout
Pno
rm
Vdd =1.5
Vdd =2.5
Vdd =3.3
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EE14154
© Digital Integrated Circuits2nd Inverter
LeakageLeakage
Vout
Vdd
Sub-ThresholdCurrent
Drain JunctionLeakage
Sub-threshold current one of most compelling issuesin low-energy circuit design!
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EE14155
© Digital Integrated Circuits2nd Inverter
ReverseReverse--Biased Diode LeakageBiased Diode Leakage
Np+ p+
Reverse Leakage Current
+
-Vdd
GATE
IDL = JS × A
JS = 10-100 pA/µm2 at 25 deg C for 0.25µm CMOSJS doubles for every 9 deg C!
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EE14156
© Digital Integrated Circuits2nd Inverter
SubthresholdSubthreshold Leakage ComponentLeakage Component
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EE14157
© Digital Integrated Circuits2nd Inverter
Static Power ConsumptionStatic Power Consumption
Vin=5V
Vout
CL
Vdd
Istat
Pstat = P(In=1).Vdd . Istat
Wasted energy …Should be avoided in almost all cases,but could help reducing energy in others (e.g. sense amps)
![Page 58: Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolicbaccaran/Rabaey/chapter05.pdf · · 2004-02-01Digital Integrated Circuits 30](https://reader031.vdocuments.site/reader031/viewer/2022012313/5ab9ed2d7f8b9ac10d8ec93e/html5/thumbnails/58.jpg)
EE14158
© Digital Integrated Circuits2nd Inverter
Principles for Power ReductionPrinciples for Power ReductionPrime choice: Reduce voltage!
Recent years have seen an acceleration in supply voltage reductionDesign at very low voltages still open question (0.6 … 0.9 V by 2010!)
Reduce switching activityReduce physical capacitance
Device Sizing: for F=20– fopt(energy)=3.53, fopt(performance)=4.47
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EE14159
© Digital Integrated Circuits2nd Inverter
Impact ofImpact ofTechnology Technology ScalingScaling
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EE14160
© Digital Integrated Circuits2nd Inverter
Goals of Technology ScalingGoals of Technology Scaling
Make things cheaper:Want to sell more functions (transistors) per chip for the same moneyBuild same products cheaper, sell the same part for less moneyPrice of a transistor has to be reduced
But also want to be faster, smaller, lower power
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EE14161
© Digital Integrated Circuits2nd Inverter
Technology ScalingTechnology Scaling
Goals of scaling the dimensions by 30%:Reduce gate delay by 30% (increase operating frequency by 43%)Double transistor densityReduce energy per transition by 65% (50% power savings @ 43% increase in frequency
Die size used to increase by 14% per generationTechnology generation spans 2-3 years
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EE14162
© Digital Integrated Circuits2nd Inverter
Technology GenerationsTechnology Generations
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EE14163
© Digital Integrated Circuits2nd Inverter
Technology Evolution (2000 data)Technology Evolution (2000 data)
International Technology Roadmap for Semiconductors
18617717116013010690Max µP power [W]1.4
1.2
6-7
1.5-1.8
180
1999
1.7
1.6-1.4
6-7
1.5-1.8
2000
14.9-3.611-37.1-2.53.5-22.1-1.6Max frequency
[GHz],Local-Global
2.52.32.12.42.0Bat. power [W]
109-10987Wiring levels
0.3-0.60.5-0.60.6-0.90.9-1.21.2-1.5Supply [V]
30406090130Technology node [nm]
20142011200820042001Year of Introduction
Node years: 2007/65nm, 2010/45nm, 2013/33nm, 2016/23nm
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EE14164
© Digital Integrated Circuits2nd Inverter
Technology Evolution (1999)Technology Evolution (1999)
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EE14165
© Digital Integrated Circuits2nd Inverter
ITRS Technology Roadmap ITRS Technology Roadmap Acceleration ContinuesAcceleration Continues
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EE14166
© Digital Integrated Circuits2nd Inverter
Technology Scaling (1)Technology Scaling (1)
Minimum Feature SizeMinimum Feature Size
1960 1970 1980 1990 2000 201010
-2
10-1
100
101
102
Year
Min
imu
m F
ea
ture
Siz
e (
mic
ron
)
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EE14167
© Digital Integrated Circuits2nd Inverter
Technology Scaling (2) Technology Scaling (2)
Number of components per chipNumber of components per chip
![Page 68: Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolicbaccaran/Rabaey/chapter05.pdf · · 2004-02-01Digital Integrated Circuits 30](https://reader031.vdocuments.site/reader031/viewer/2022012313/5ab9ed2d7f8b9ac10d8ec93e/html5/thumbnails/68.jpg)
EE14168
© Digital Integrated Circuits2nd Inverter
Technology Scaling (3)Technology Scaling (3)
Propagation DelayPropagation Delay
tp decreases by 13%/year50% every 5 years!
![Page 69: Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolicbaccaran/Rabaey/chapter05.pdf · · 2004-02-01Digital Integrated Circuits 30](https://reader031.vdocuments.site/reader031/viewer/2022012313/5ab9ed2d7f8b9ac10d8ec93e/html5/thumbnails/69.jpg)
EE14169
© Digital Integrated Circuits2nd Inverter
Technology Scaling (4)Technology Scaling (4)
(a) Power dissipation vs. year.
959085800.01
0.1
1
10
100
Year
Pow
er D
issi
patio
n (W
)
x4 / 3 year
s
MPU DSP
x1.4 / 3 years
Scaling Factor κ (normalized by 4µm design rule)
1011
10
100
1000
∝ κ 3
Pow
er D
ensi
ty (m
W/m
m2 )
∝ κ 0.7
(b) Power density vs. scaling factor.
From Kuroda
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EE14170
© Digital Integrated Circuits2nd Inverter
Technology Scaling Models Technology Scaling Models
• Full Scaling (Constant Electrical Field)
• Fixed Voltage Scaling
• General Scaling
ideal model — dimensions and voltage scaletogether by the same factor S
most common model until recently —only dimensions scale, voltages remain constant
most realistic for todays situation —voltages and dimensions scale with different factors
![Page 71: Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolicbaccaran/Rabaey/chapter05.pdf · · 2004-02-01Digital Integrated Circuits 30](https://reader031.vdocuments.site/reader031/viewer/2022012313/5ab9ed2d7f8b9ac10d8ec93e/html5/thumbnails/71.jpg)
EE14171
© Digital Integrated Circuits2nd Inverter
Scaling Relationships for Long Channel DevicesScaling Relationships for Long Channel Devices
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EE14172
© Digital Integrated Circuits2nd Inverter
Transistor ScalingTransistor Scaling(velocity(velocity--saturated devices)saturated devices)
![Page 73: Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolicbaccaran/Rabaey/chapter05.pdf · · 2004-02-01Digital Integrated Circuits 30](https://reader031.vdocuments.site/reader031/viewer/2022012313/5ab9ed2d7f8b9ac10d8ec93e/html5/thumbnails/73.jpg)
EE14173
© Digital Integrated Circuits2nd Inverter
µµProcessorProcessor ScalingScaling
P.Gelsinger: µProcessors for the New Millenium, ISSCC 2001
![Page 74: Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolicbaccaran/Rabaey/chapter05.pdf · · 2004-02-01Digital Integrated Circuits 30](https://reader031.vdocuments.site/reader031/viewer/2022012313/5ab9ed2d7f8b9ac10d8ec93e/html5/thumbnails/74.jpg)
EE14174
© Digital Integrated Circuits2nd Inverter
µµProcessorProcessor PowerPower
P.Gelsinger: µProcessors for the New Millenium, ISSCC 2001
![Page 75: Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolicbaccaran/Rabaey/chapter05.pdf · · 2004-02-01Digital Integrated Circuits 30](https://reader031.vdocuments.site/reader031/viewer/2022012313/5ab9ed2d7f8b9ac10d8ec93e/html5/thumbnails/75.jpg)
EE14175
© Digital Integrated Circuits2nd Inverter
µµProcessorProcessor PerformancePerformance
P.Gelsinger: µProcessors for the New Millenium, ISSCC 2001
![Page 76: Jan M. Rabaey Anantha Chandrakasan Borivoje Nikolicbaccaran/Rabaey/chapter05.pdf · · 2004-02-01Digital Integrated Circuits 30](https://reader031.vdocuments.site/reader031/viewer/2022012313/5ab9ed2d7f8b9ac10d8ec93e/html5/thumbnails/76.jpg)
EE14176
© Digital Integrated Circuits2nd Inverter
2010 Outlook2010 Outlook
Performance 2X/16 months1 TIP (terra instructions/s)30 GHz clock
SizeNo of transistors: 2 BillionDie: 40*40 mm
Power10kW!!Leakage: 1/3 active Power
P.Gelsinger: µProcessors for the New Millenium, ISSCC 2001
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EE14177
© Digital Integrated Circuits2nd Inverter
Some interesting questionsSome interesting questions
What will cause this model to break?When will it break?Will the model gradually slow down?
Power and power densityLeakageProcess Variation