7/27/2019 IXTQ 150N06P

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2006 IXYS All rights reserved

Symbol Test Conditions Maximum Ratings

VDSS TJ = 25 C to 175 C 60 V

VDGR TJ = 25 C to 175 C; R GS = 1 M 60 V

VGS Continuous 20 VVGSM Transient 30 V

ID25 TC = 25 C 150 A

IDRMS External lead current limit 75 A

IDM TC = 25 C, pulse width limited by T JM 280 A

IAR TC = 25 C 60 A

E AR TC = 25 C 60 mJ

E AS TC = 25 C 2.5 J

dv/dt IS IDM, di/dt 100 A/ s, V DD VDSS , 10 V/nsT

J 150

C, R

G= 10

P D TC = 25 C 480 W

TJ -55 ... +175 CTJM 175 CTstg -55 ... +150 C

TL 1.6 mm (0.062 in.) from case for 10 s 300 CTSOLD Plastic body for 10 s 260 C

Md Mounting torque 1.13/10 Nm/lb.in.

Weight 5.5 g

G = Gate D = DrainS = Source TAB = Drain

DS99254E(12/05)

Symbol Test Conditions Characteristic Values(T J = 25 C, unless otherwise specified) Min. Typ. Max.

BVDSS VGS = 0 V, I D = 250 A 60 V

VGS(th) VDS = VGS , ID = 250 A 2.5 5.0 V

IGSS VGS = 20 V DC , V DS = 0 100 nA

IDSS VDS = VDSS 25 AVGS = 0 V T J = 150 C 250 A

R DS(on) VGS = 10 V, I D = 0.5 I D25 8 10 m Pulse test, t 300 s, duty cycle d 2 %

PolarHT TM

Power MOSFET

N-Channel Enhancement Mode Avalanche Rated

Features

l International standard packagel Unclamped Inductive Switching (UIS)

ratedl Low package inductance

- easy to drive and to protect

Advantages

l Easy to mountl Space savingsl High power density

TO-3P (IXTQ)

GD

S (TAB)

IXTQ 150N06P VDSS = 60 VID25 = 150 AR DS(on) 10 m

7/27/2019 IXTQ 150N06P

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXTQ 150N06P

Symbol Test Conditions Characteristic Values(TJ = 25 C, unless otherwise specified)

Min. Typ. Max.

g fs VDS = 10 V; I D = 0.5 I D25 , pulse test 32 50 S

C iss 3000 pF

C oss VGS = 0 V, V DS = 25 V, f = 1 MHz 2100 pF

C rss 850 pF

td(on) 27 ns

t r VGS = 10 V, V DS = 0.5 V DSS , ID = ID25 53 ns

td(off) R G = 10 (External) 66 ns

t f 45 ns

Q g(on) 118 nC

Q gs VGS = 10 V, V DS = 0.5 V DSS , ID = 0.5 I D25 30 nC

Q gd 55 nC

R thJC 0.31 C/W

R thCS 0.21 C/W

Source-Drain Diode Characteristic Values(TJ = 25 C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

IS VGS = 0 V 150 A

ISM Repetitive 280 A

VSD

IF

= IS, V

GS= 0 V, 1.5 V

Pulse test, t 300 s, duty cycle d 2 %

t rr IF = 25 A, -di/dt = 100 A/ s 90 nsQ RM VR = 30 V, V GS = 0 V 2.0 C

IXYS MOSFETs and IGBTs are covered by 4 ,8 35 ,5 92 4 ,9 31 ,8 44 5 ,0 49 ,9 61 5 ,2 37 ,4 81 6 ,1 62 ,6 65 6 ,4 04 ,0 65 B1 6 ,6 83 ,3 44 6 ,7 27 ,5 85one or moreof the following U.S. patents: 4 ,8 50 ,0 72 5 ,0 17 ,5 08 5 ,0 63 ,3 07 5 ,3 81 ,0 25 6 ,2 59 ,1 23 B1 6 ,534 ,343 6 ,7 10 ,4 05 B2 6 ,7 59 ,6 92

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

TO-3P (IXTQ) Outline

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2006 IXYS All rights reserved

IXTQ 150N06P

Fig. 2. Extende d Output Characte ris tics@ 25 C

0

30

60

90

120

150

180210

240

270

300

0 1 2 3 4 5 6 7 8 9 10V D S - Volts

I D -

A m p e r e s

VGS = 10V

7V

6V

8V

9V

5V

Fig. 3. Output Character istics@ 150 C

0

20

40

60

80

100

120

140

160

0 0.5 1 1.5 2 2.5 3 3.5 4V D S - Volts

I D -

A m p e r e s

VGS = 10V9V

5V

6V

7V

8V

Fig. 1. Output Character istics@ 25 C

0

20

40

60

80

100

120

140

160

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

V D S - Volts

I D -

A m p e r e s

VGS = 10V9V

7V

5V

6V

8V

Fig. 4. R DS(on ) Norm alize d to 0.5 I D25Value vs. Junction Tem perature

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-50 -25 0 25 50 75 100 125 150 175TJ - Degrees Centigrade

R D S ( o n

) -

N o r m a l

i z e d

ID = 150A

ID = 75A

VGS = 10V

Fig. 6. Drain Cur re nt vs. Cas eTemperature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150 175TC - Degrees Centigrade

I D -

A m p e r e s

External Lead Current Limit

Fig. 5. R DS(on) Norm alize d to 0.5 I D25Value vs. Drain Curr ent

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

0 25 50 75 100 125 150 175 200 225 250I D - A mperes

R D S ( o n

) -

N o r m a l i z e d

TJ = 25 C

VGS = 10V

TJ = 175 C

VGS = 15V

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IXYS reserves the right to change limits, test conditions, and dimensions.

IXTQ 150N06P

Fig. 11. Capacitance

100

1000

10000

0 5 10 15 20 25 30 35 40V DS - Volts

C a p a c

i t a n c e - p i c o

F a r a

d s C iss

C oss

C rss

f = 1MHz

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 20 40 60 80 100 120Q G - nanoCoulombs

V G S -

V o l

t s

VDS = 30V

ID = 75A

IG = 10mA

Fig. 7. Input Adm ittance

0

25

50

75

100

125

150

175

200

225

250

275

3 4 5 6 7 8 9 10

V G S - Volts

I D -

A m p e r e s

TJ = -40 C25 C

150 C

Fig. 8. Trans conductance

0

10

20

30

40

50

60

70

0 50 100 150 200 250 300I D - Amperes

g f s -

S i e m e n s TJ = -40 C

25 C150 C

Fig. 9. Source Current vs.Source-To-Drain Voltage

0

50

100

150

200

250

300

0.4 0.6 0.8 1 1.2 1.4 1.6V S D - Volts

I S -

A m p e r e s

TJ

= 150 C

TJ = 25 C

Fig. 12. Forw ard-BiasSafe Oper ating Are a

10

100

1000

1 10 100V D S - Volts

I D -

A m p e r e s 100s

1ms

DCTJ = 175 CTC = 25 C

R DS(on) Limit

10ms

25s

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2006 IXYS All rights reserved

IXTQ 150N06P

F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s i s t a n c e

0 . 0 1

0 . 1 0

1 . 0 0

0 . 1 1 1 0 1 0 0 1 0 0 0

P u ls e W id t h - m i llis e c o n d s

R ( t h ) J C -

C / W