iwlpc october 13-15, 2015 catherine shearer, ken holcomb and michael matthews ormet circuits, inc....

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IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

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Page 1: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

IWLPC October 13-15, 2015

Catherine Shearer, Ken Holcomb and Michael Matthews

Ormet Circuits, Inc.

Maria Spiteri and Ivan Ellul

STMicroelectronics

Page 2: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

The state of fan-in WLP Description of the Lab4MEMS consortium effort How is the Lab4MEMS program leveraging WLP? Package concept and process flow Focus on LGA

◦ Process scheme◦ Land formation◦ Interconnect to the die◦ Interconnection to the outside world

Results and next steps Summary

Page 3: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

• Fan-in WLP has become well established in the industry

• As shown in the Yole chart, fan-in WLP continues to grow briskly

• With the fundamentals well established, there is an opportunity to explore new architectures and levels of integration

Page 4: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

http://www.lab4mems.upb.ro/

• Lab4MEMS is an R&D project funded by the EU under ENIAC

• Develop key enabling technologies

• Piezoelectric and magnetic based devices

• Smart MEMS sensors and actuators

• Advanced 3D packaging• 9 countries participating

Page 5: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

ASIC and sensor die◦ Nested face-to-face

Through mold interconnect◦ Vertical wire bond, or◦ Stacked wire bump◦ Extend beyond height of

sensor (daughter) die LGA

◦ Formation material/method◦ Connection scheme to vertical

interconnect◦ Surface finish

Page 6: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Chip to WaferFace to Face Interconnection

Wafer Molding

Vertical Wire/Stud bump Connection

Laser drilling and Land Grid Formation

Vertical Wire/Stud bump Exposed

Soldering of lands

Process Flow Overview

Land grid array recessed into mold compound Sintering conductive paste used to form land grid array

Page 7: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

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Page 8: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Formation of the LGA and Connection to the Vertical Interconnect

•Advantages of an LGA vs. a BGA• Shorter interconnect length• Tighter pitch possible• Package height reduction

•Problems with plating the package• Complicated process• Expensive• Potential for voids at plating/wire interface

•Proposed solution: sintering paste• Adheres to mold compound• Simple deposition• Metallurgical interface to vertical

interconnect• Platable and solderable

Page 9: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Copper and tin-alloy particles in a flux mixture During heating (180-260C depending on formula) the tin-

alloy melts and reacts with copper particles and solderable surfaces◦ Inert environment required (N2, press, vacuum, reducing)◦ Pressure not required

Continuous metal joint after thermal process No remelt Wide variety of rheologies available Electrical, thermal and mechanical properties similar to

solders

Cu-Sn phases

Copper particle

Residual alloy bridge

Compliant TLPS design

Page 10: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Proprietary organics, copper and tin alloy particles: Transient Liquid Phase Sintering (TLPS)

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Unprocessed Paste Sintered Network After Processing

Page 11: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Application Image

Microvia fill

Stenciled Interconnect

Through hole fill

X-Y Traces

Component Attach

Die attach paste (DAP)

TLPS pastes have been used for 20+ years in high reliability, high performance PCB applications

Page 12: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Initial design concept posed some implementation challenges◦ The contact area with the exposed top

of the vertical wire was very small◦ Not all the wires were straight◦ Concern about the ability of the

adhesive bond between the sintering paste and the mold compound to survive SMT

◦ Some of the RDL to the I/O footprint included in the surface print – aggressive for a print design

RDL

Page 13: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

laser ablated pattern

TLPS paste

First Test Vehicle Solution: Laser Ablate the Mold Compound in the RDL + LGA pattern and Fill with Sintering Paste

Au wires

Filled with TLPS paste

Creating a laser ablated recessed pattern:•Increases connection area between wire and TLPS paste•Compensates for wires that are not straight•Prevents bridging between the small features•Increases contact area between the paste and mold compound for more robust adhesion•Results in a pattern that is flush with the surface of the mold compound

Page 14: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Results for the first test vehicle

The RDL + pad pattern could be laser ablated ◦ CO2 laser used to ablate – no effect on the wire◦ All of the wires became exposed and the contact area

was increased◦ Differential ablation of the polymer and silica resulted in

irregular depth and edges◦ Irregular and insufficient depth resulted in poor sintering

of paste With additional ablation time, good fill and sintering

was achieved Concern about how to mask the RDL portion

Page 15: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Move the RDL to the interior of the package◦ Only the LGA on the surface of the package

Use the stacked bump interconnect rather than a wire

Laser ablate to the deeper dimension Consider a finish metal on the exposed pad

surface

X X X X X XX

Page 16: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

After grinding, the exposed bump stack surface was ~60µm◦ Sufficient for a good interconnect◦ Decision to ablate for the improved

mechanical ruggedness◦ Ablating cavities results in pads

flush with the surface of the mold compound

Laser ablation was challenging◦ Laser energy reflected off of the

metal bump stack◦ Large variation in size of silica filler

Page 17: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Sintering paste flood filled into the laser ablated LGA pattern

Surface residue polished off after sintering

Issues:◦ Some metal particles embedded in

mold compound – extensive polishing required

◦ Wafer substantially warped during sintering cycle – difficult to handle for polishing

Page 18: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Wafer probed for electrical continuity◦ Positive results

Cross section reveals good metallurgical connection between the bump stacks and the sintering paste

Sintering paste

Bump stack

Mold compound

Si

Page 19: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Solder paste stenciled onto sintered paste LGA and reflowed

Sintered paste surface is unfamiliar to assemblers

Some sintering techniques result in a rough surface texture

Reflowed solder paste explored first◦ Stencil application challenging due to

warpage of wafer◦ Good solder wetting to paste

Electroless plated surfaces currently under investigation◦ ENIG plating successful

Page 20: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

Scribe wafer after bump stack reveal to relieve warpage from sintering operation

Explore variations in the sintering technique to minimize warpage and finished surface roughness

Explore alternative electroless plated finshes: Ag, Sn, ENEPIG Revisit stencil printing on surface of mold compound

◦ Solder paste printing demonstrates that stencil application is possible with LGA-only design

◦ Revealed bump stack top is sufficient in size to make good electrical connection

◦ Mechanical ruggedness of sintered paste to mold compound bond for SMT needs to be evaluated

Page 21: IWLPC October 13-15, 2015 Catherine Shearer, Ken Holcomb and Michael Matthews Ormet Circuits, Inc. Maria Spiteri and Ivan Ellul STMicroelectronics

New dual die fan-in WLP under development◦ Part of the Lab4MEMS consortium effort◦ Nested face to face sensor + ASIC◦ Through mold vias from mother die extended past

nested daughter die◦ LGA vs. BGA

LGA formed from sintering paste◦ Good electrical interconnection achieved◦ Implementation strategy under investigation

Laser ablated recesses vs. surface printing◦ Final surface finishes under investigation