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IRFB4332PbF

Notesthrough are on page 8

DescriptionHEXFET Power MOSFETMOSFET !"#MOSFET$%&'()*++*MOSFET

,++

Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low QG for Fast Response High Repetitive Peak Current Capability for Reliable Operation Short Fall & Rise Times for Fast Switching175C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness and Reliability

S

D

G

TO-220AB

D

SD

G

G D SGate Drain Source

VDS min 250 VVDS (Avalanche) typ. 300 VRDS(ON) typ. @ 10V 29 mTJ max 175 C

Key Parameters

Absolute Maximum RatingsParameter Units

VGS Gate-to-Source Voltage V

ID @ TC = 25C Continuous Drain Current, VGS @ 10V A

ID @ TC = 100C Continuous Drain Current, VGS @ 10V

IDM Pulsed Drain Current

IRP @ TC = 100C Repetitive Peak Current

PD @TC = 25C Power Dissipation W

PD @TC = 100C Power Dissipation

Linear Derating Factor W/C

TJ Operating Junction and C

TSTG Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw N

Thermal ResistanceParameter Typ. Max. Units

RJC Junction-to-Case 0.38RCS Case-to-Sink, Flat, Greased Surface 0.50 C/WRJA Junction-to-Ambient 62

Max.

42

230

60

30

120

300

-40 to + 175

10lbin (1.1Nm)

390

200

2.6

2 www.irf.com

S

D

G

Electrical Characteristics @ TJ = 25C (unless otherwise specified)Parameter Min. Typ. Max. Units

BVDSS Drain-to-Source Breakdown Voltage 250 V

VDSS/TJ Breakdown Voltage Temp. Coefficient 170 mV/CRDS(on) Static Drain-to-Source On-Resistance 29 33 mVGS(th) Gate Threshold Voltage 3.0 5.0 V

VGS(th)/TJ Gate Threshold Voltage Coefficient -14 mV/CIDSS Drain-to-Source Leakage Current 20 A

1.0 mA

IGSS Gate-to-Source Forward Leakage 100 nA

Gate-to-Source Reverse Leakage -100

gfs Forward Transconductance 100 S

Qg Total Gate Charge 99 150 nC

Qgd Gate-to-Drain Charge 35

tst Shoot Through Blocking Time 100 ns

EPULSE Energy per Pulse J

Ciss Input Capacitance 5860

Coss Output Capacitance 530 pF

Crss Reverse Transfer Capacitance 130

Coss eff. Effective Output Capacitance 360

LD Internal Drain Inductance 4.5 Between lead,

nH 6mm (0.25in.)

LS Internal Source Inductance 7.5 from package

Avalanche CharacteristicsParameter Units

EAS Single Pulse Avalanche Energy mJ

EAR Repetitive Avalanche Energy mJ

VDS(Avalanche) Repetitive Avalanche Voltage V

IAS Avalanche Current A

Diode Characteristics Parameter Min. Typ. Max. Units

IS @ TC = 25C Continuous Source Current 60

(Body Diode) A

ISM Pulsed Source Current 230

(Body Diode)

VSD Diode Forward Voltage 1.3 V

trr Reverse Recovery Time 190 290 ns

Qrr Reverse Recovery Charge 820 1230 nC

MOSFET symbol

VDS = 25V, ID = 35A

VDD = 125V, ID = 35A, VGS = 10V

Conditions

and center of die contact

VDD = 200V, VGS = 15V, RG= 4.7

VDS = 200V, RG= 5.1, TJ = 25CL = 220nH, C= 0.3F, VGS = 15V

VDS = 200V, RG= 5.1, TJ = 100C

VDS = 25V

VDS = VGS, ID = 250A

VDS = 250V, VGS = 0V

VGS = 0V, VDS = 0V to 200V

VDS = 250V, VGS = 0V, TJ = 125C

VGS = 20V

VGS = -20V

VGS = 0V

L = 220nH, C= 0.3F, VGS = 15V

ConditionsVGS = 0V, ID = 250A

Reference to 25C, ID = 1mA

VGS = 10V, ID = 35A

TJ = 25C, IF = 35A, VDD = 50V

di/dt = 100A/s

TJ = 25C, IS = 35A, VGS = 0V

showing the

integral reverse

p-n junction diode.

Typ. Max.

= 1.0MHz,

230

39

35

300

520

920

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Fig 6. Typical EPULSE vs. Drain CurrentFig 5. Typical EPULSE vs. Drain-to-Source Voltage

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D, D

rain

-to-

Sou

rce

Cur

rent

(A

)

60s PULSE WIDTHTj = 25C

5.5V

VGSTOP 15V

10V8.0V7.0V6.5V6.0V

BOTTOM 5.5V

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

I D, D

rain

-to-

Sou

rce

Cur

rent

(A

)

60s PULSE WIDTHTj = 175C

5.5V

VGSTOP 15V

10V8.0V7.0V6.5V6.0V

BOTTOM 5.5V

4.0 5.0 6.0 7.0 8.0

VGS, Gate-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

I D, D

rain

-to-

Sou

rce

Cur

rent

( )

VDS = 25V

60s PULSE WIDTH

TJ = 25C

TJ = 175C

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

RD

S(o

n) ,

Dra

in-t

o-S

ourc

e O

n R

esis

tanc

e

(

Nor

mal

ized

)

ID = 35A

VGS = 10V

150 160 170 180 190 200

VDS, Drain-to -Source Voltage (V)

0

200

400

600

800

1000

Ene

rgy

per

puls

e (

J)

L = 220nHC = 0.3F 100C 25C

100 110 120 130 140 150 160 170

ID, Peak Drain Current (A)

0

200

400

600

800

1000

Ene

rgy

per

puls

e (

J)

L = 220nHC = Variable 100C 25C

4 www.irf.comFig 11. Maximum Drain Current vs. Case Temperature

Fig 8. Typical Source-Drain Diode Forward Voltage

Fig 12. Maximum Safe Operating Area

Fig 7. Typical EPULSE vs.Temperature

Fig 10. Typical Gate Charge vs.Gate-to-Source VoltageFig 9. Typical Capacitance vs.Drain-to-Source Voltage

25 50 75 100 125 150

Temperature (C)

0

200

400

600

800

1000

1200

1400E

nerg

y pe

r pu

lse

(J)

L = 220nH

C= 0.3FC= 0.2FC= 0.1F

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

0

2000

4000

6000

8000

10000

C, C

apac

itanc

e (p

F)

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTED

Crss = Cgd Coss = Cds + Cgd

0 40 80 120 160

QG Total Gate Charge (nC)

0

4

8

12

16

20

VG

S, G

ate-

to-S

ourc

e V

olta

ge (

V) VDS= 200V

VDS= 125V

VDS= 50V

ID= 35A

25 50 75 100 125 150 175

TJ, Junction Temperature (C)

0

10

20

30

40

50

60

I D,

Dra

in C

urre

nt (

A)

1 10 100 1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I D,

Dra

in-t

o-S

ourc

e C

urre

nt (

A)

Tc = 25CTj = 175CSingle Pulse

1sec

10sec

OPERATION IN THIS AREA LIMITED BY RDS(on)

100sec

0.2 0.4 0.6 0.8 1.0 1.2

VSD, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

I SD

, Rev

erse

Dra

in C

urre

nt (

A)

TJ = 25C

TJ = 175C

VGS = 0V

www.irf.com 5Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 15. Threshold Voltage vs. Temperature

Fig 14. Maximum Avalanche Energy Vs. TemperatureFig 13. On-Resistance Vs. Gate Voltage

Fig 16. Typical Repetitive peak Current vs.Case temperature

5 6 7 8 9 10

VGS, Gate-to-Source Voltage (V)

0.00

0.10

0.20

0.30

0.40

RD

S(o

n),

Dra

in-t

o -S

ourc

e O

n R

esis

tanc

e ( )

TJ = 25C

TJ = 125C

ID = 35A

25 50 75 100 125 150 175

Starting TJ, Junction Temperature (C)

0

200

400

600

800

1000

EA

S,

Sin

gle

Pul

se A

vala

nche

Ene

rgy

(mJ) I D

TOP 8.3A 13ABOTTOM 35A

-75 -50 -25 0 25 50 75 100 125 150 175

TJ , Temperature ( C )

1.0

2.0

3.0

4.0

5.0

VG

S(t

h) G

ate

thre

shol

d V

olta

ge (

V)

ID = 250A

25 50 75 100 125 150 175

Case Temperature (C)

0

20

40

60

80

100

120

140

160

180

Rep

etiti

ve P

eak

Cur

rent

(A

)

ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

The

rmal

Res

pons

e (

Z th

JC )

0.20

0.10

D = 0.50

0.020.01

0.05

SINGLE PULSE( THERMAL RESPONSE )

Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc

Ri (C/W) (sec)0.077468 0.000097

0.169886 0.001689

0.13319 0.012629

JJ

11 2

2 33

R1R1 R2

R2 R3R3

C

Ci= i/RiCi= i/Ri

6 www.irf.com

Fig 19b. Unclamped Inductive WaveformsFig 19a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

RG

IAS

0.01tp

D.U.T

LVDS

+- VDD

DRIVER

A

15V

20VVGS

Fig 20a. Gate Charge Test Circuit Fig 20b. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

D.U.T.VDS

IDIG

3mA

VGS

.3F

50K.2F12V

Current RegulatorSame Type as D.U.T.

Current Sampling Resistors

+

-

Fig 18. for HEXFET Power MOSFETs

P.W.Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward DropRe-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D = P.W.Period

+

-

+

+

+-

-

-

!"#""

$%% "#""

www.irf.com 7

Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms

Fig 21c. EPULSE Test Waveforms

PULSE A

PULSE B

tST

DRIVER

DUT

L

C

VCC

RG

RG

B

A

Ipulse

8 www.irf.com

Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 09/08

Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.39mH, RG = 25, IAS = 35A.

Pulse width 400s; duty cycle 2%. R is measured at Half sine wave with duty cycle = 0.25, ton=1sec. Applicable to Sustain and Energy Recovery applications.

TO-220AB packages are not recommended for Surface Mount Application.

INTERNATIONAL PART NUMBER

RECTIFIER

LOT CODEASSEMBLY

LOGO

YEAR 0 = 2000DATE CODE

WEEK 19LINE C

LOT CODE 1789

EXAMPLE: THIS IS AN IRF1010

Note: "P" in assembly line pos itionindicates "Lead - Free"

IN THE ASSEMBLY LINE "C"ASSEMBLED ON WW 19, 2000