introduction ee603
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8/9/2019 Introduction EE603
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EE603
CMOS INTEGRATED CIRCUIT DESIGN
COURSE : EE603 CMOS INTEGRATED CIRCUIT DESIGN
INSTRUCTIONAL DURATION : 15 WEEKS
CREDIT(S) : 2
PRE REQUISITE(S) : NONE
SYNOPSIS
CMOS INTEGRATED CIRCUIT DESIGN course exposes the students to the basic
principles of CMOS interated circuit desin! "ith co#prehensi$e o$er$ie" of theMOS%ET transistor theor&' %urther#ore! the students "ill be e(uipped "ith the
)no"lede to desin nucleus of diital desin! the in$erter! and desinin si#ple to
co#plex diital CMOS ates' %inall&! the students "ill experience de$elopin the ph&sical
la&out of an interated circuit usin CAD tools co#pl&in "ith specific
desin rules'
E E 6 0 3 C M O S I N T E G R A T E D
C I R C U I T D
E S I G N
N O R
H A L I Z A A B D U L
H A M I D J K
E / P U O
Lecturer : E! S"#$%e# N$%$r$&$'P'(e ): 0*+,-.6.//E1$"2 ID: 3"#$%e#45$'((!c(1
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COURSE LEARNING OUTCOMES (CLO)
Upo !o"p#$%&o o' %& !o*+$, %*-$% o*#- .$ /.#$ %o:
*' explain correctl& the basic principles of interated circuit desin!
desin #etrics! desin #ethodolo& and desin hierarch& of CMOS
IC desin' +C,-
,' explain clearl& the operation theor& and transistor characteristics of
MOS and CMOS transistors' +C,-
.' construct the basic loic ates usin static and d&na#ic CMOS
techni(ues'+C.-
/' dra" the la&out desin of a CMOS circuit usin la&out desin soft"are
based on specific CMOS la&out desin rules' +0.-
1' perfor# co##unication s)ill throuh oral presentation on a i$en topic' +A,-
E E 6 0 3 C M O S I N T E G R A T E D C
I R C U I T D E S I G N
N O R H A L I Z A A B D U L
H A M I D
K E / P U O
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SUMMARY (30 LECTURE : 30 PRACTICAL)
RTA
10 INTRODUCTION TO INTEGRATED CIRCUIT (02 : 00)
E$olution in interated circuit' %unda#ental of desin #etrics that o$ern diital desin'
0erfor#ance e$aluation of a diital circuit' Issues in diital desin'
20 MANUACTURING PROCESS (02 : 00)Manufacturin process re$isited' The concept of desin rules' Issues related to desinin
the la&out of an interated circuit'
30 TE DEICE (06 : 04)
Co#prehensi$e o$er$ie" of the operation of diode and MOS transistor' Issues in
Sub2Micron MOS Transistor desin'
0 TE WIRE (0 : 00)
I#pact of Interconnect 0arasitic3 capacitances! resistance and inductance on interated
circuit desin'
50 TE CMOS INERTER (06 : 10)
4oltae Transfer Characteristic of an in$erter' Desin for 0erfor#ance' In$erter Si5in'
0o"er Dissipation' I#pact of Technolo& Scalin'
60 DESIGNING COMINATIONAL LOGIC CIRCUITS (04 : 12)
Static CMOS Circuit' Co#ple#entar& CMOS 6oic St&le' Cell Desin' Rationed 6oic'
D&na#ic 6oic
70 DESIGN METODOLOGY (02 : 00)
Desin hierarch& and #ethodolo&3 standard IC! specific custo# IC! %ull2custo# IC!
se#i2custo# IC! ate2arra&! standard cell! and prora##able loic de$ice +06D-'
E E 6 0 3 C M O S I N T E G R A T E D C
I R C U I T D E S I G N
N O R H A L I Z A A B
D U L H A M I D
K E / P U O
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ASSESSMENT
The course assess#ent is carried out in t"o sections3
& Co*+$8o+9 (CA) 50;
Course"or) is continuous assess#ent that #easures )no"lede!technical s)ills and soft s)ills'
&& &/# E</"&/%&o (E) = 50;
%inal exa#ination is carried out at the end of the se#ester'
E E 6 0 3 C M O S I N T E G R A T E D C
I R C U I T D E S I G N
N O R H A L I Z A A B D
U L H A M I D
K E / P U O
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E E 6 0 3 C M O S I N T E G R A T E D C
I R C U I T D E S I G N
N O R H A L I Z A A B D
U L H A M I D
K E / P U O
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REERENCES
Adel S' Sedra and 7enneth Carless' S#ith+,88.-' Microelectronic Circuits. Oxford
Uni$ersit& 0ress
Rabae&! 9' M! Anantha Chandra)asan! :ori$o;e Ni)olic' +,88.-' Digital Integrated Circuit, 0rentice <all! Inc'
U&e#ura! 9' 0' +,88=-' Chip Design for Submicron VLSI ' Nelson! Tho#pson of
Canada 6td'
4'S':aad +,88>-' VLSI Design' Technical 0ublications'
?este! N! Eshrahian'7' +,888-' Principles of CMOS VLSI Design' Addison2?esle&
E E 6 0 3 C M O S I N T E G R A T E D
C I R C U I T D E S I G N
N O R H A L I Z A A B D U L H A M I D J K
E / P U O