introduccio fonaments electronica

21
Semiconductor Band Diagram Atomic organization

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introduccion a la electronica

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  • Semiconductor Band DiagramAtomic organization

  • Silicon atom

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  • Covalent linkageEK LevelsL LevelsM Levels(Valence)Conduction levels

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  • EK BandL BandM Band (Valence)Conduction Band

    Band Gap

    Band diagram

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  • Crystalline structure (Crystal cell)Polycrystalline structureAmorphous Silicon

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  • Free Charge Carriers

  • EValence BandConduction BandSi

    Band Gap (1.12 eV)Energy (E> Band Gap)

    Charge carrier generation

    electronhole Electron is a free charge carrier Electron has a negative charge

    +

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  • EValence BandConduction BandSi

    Band Gap (1.12 eV)

    Holes as charge carriers

    electronhole

    Electron movementHole movement Hole is a free charge carrier Hole has a positive charge

    ++

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  • EValence BandConduction BandSi

    Band Gap (1.12 eV)

    Charge carrier recombination

    electronhole

    Energy

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  • SummaryBoth electrons (negative charge) and holes (positive charge) are free charge carriers

    There is an equilibrium between electrons-hole pairs generated (G) and recombined (R).

    This equilibrium between R and G depens on the energy applied to the system (mainly due to temperature)

    So, electron concentration (n) = hole concentration (p) = ni (T)

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  • Free Charge Carriers Movement: Currents

  • Free charge carriers (Electrons or holes)

    Diffusion currentElectrical charge movement => Electric currentCharge carriers movementIf charge carriers are electronsDiffusion currentIf charge carriers are holesDiffusion current

  • Drift current

    ElectronsHoles Electric Field Drift currentDrift current

  • n = 1350 cm2/V sp = 480 cm2/V sq = 1.6 10-19 Cni = 1.5 1010 cm-3

    s = 4.39 10-6 S/cm= 4.39 10-4 S/m

    Materials (S/m)

    Silver6,30 107Gold5,96 107Copper4,10 107Aluminium3,50 107PET10-21TEFLON10-25 - 10-23

  • Summary

    Since both charge carriers have an electrical charge, they can move when applying an electric field, causing a Drift Current (Ia)

    If the concentration of a charge carrier type is high in a determined semiconductor region, the repulsing forces between equal charges produces the diffusion of the charge carriers, causing a Diffusion Current (Id)

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  • Doping Semiconductors

  • Doping semiconductors

    Si

    Intrinsic semiconductorWe have as many holes as electronsn=pnp=ni 2

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  • Doping semiconductors

    Si

    P

    N- Type semiconductorWe are generating free electrons without generating holes (n>p)+

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  • Doping semiconductors

    Si

    Si

    BP- Type semiconductorWe are generating holes without generating electrons (n

  • Resistivity of n-type (red curve) and p-type (blue curve) silicon versus doping density

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