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Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 1 Integrated Transmitter for 100 Gb/s OOK Connectivity Based on Polymer Photonics and InP-DHBT Electronics V. Katopodis (1) , Ch. Kouloumentas (1) , A. Konczykowska (2) , F. Jorge (2) , P. Groumas (1) , Z. Zhang (3) , A. Beretta (4) , A. Dede (4) , J.-Y. Dupuy (2) , V. Nodjiadjim (2) , Giulio Cangini (5) , G. Von Büren (5) , E. Miller (5) , R. Dinu (5) , N. Keil (3) , H.-G. Bach (3) , N. Grote (3) , A. Vannucci (4) , and H. Avramopoulos (1) (1)National Technical University of Athens, Zografou 15573, Athens, Greece (2) III-V Lab, Route de Nozay, Marcoussis, 91460 France (3) Fraunhofer Institute for Telecommunications, HHI, Berlin 10587, Germany (4) Linkra Srl, Via S.Martino 7, 20864 Agrate Brianza (MB) Italy (5) GigOptix Inc.19910 North Creek Parkway Suite 100, Bothell, WA, 98011, USA

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Page 1: Integrated Transmitter for 100 Gb/s OOK Connectivity Based ......Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 1 Integrated Transmitter

Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 1

Integrated Transmitter for 100 Gb/s OOK Connectivity Based on Polymer Photonics and InP-DHBT Electronics

V. Katopodis(1), Ch. Kouloumentas(1), A. Konczykowska(2), F. Jorge(2), P. Groumas(1), Z. Zhang(3), A. Beretta(4), A. Dede(4), J.-Y. Dupuy(2), V.

Nodjiadjim(2), Giulio Cangini(5), G. Von Büren(5), E. Miller(5), R. Dinu(5), N. Keil(3), H.-G. Bach(3), N. Grote(3), A. Vannucci(4), and H. Avramopoulos(1)

(1)National Technical University of Athens, Zografou 15573, Athens, Greece (2) III-V Lab, Route de Nozay, Marcoussis, 91460 France (3) Fraunhofer Institute for Telecommunications, HHI, Berlin 10587, Germany (4) Linkra Srl, Via S.Martino 7, 20864 Agrate Brianza (MB) Italy (5) GigOptix Inc.19910 North Creek Parkway Suite 100, Bothell, WA, 98011, USA

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Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 2

Presentation Outline

• Intro – Why serial 100Gb/s connectivity

• Technical solutions and our approach

• Transmitter device and experiment at 80-100 Gb/s

•Next step

• Conclusions

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Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 3

Why serial 100G connectivity?

Despite current achievements on 100 GbE interconnection, efforts on higher bandwidth transceivers are ongoing • A robust solution for 100 Gb/s NRZ-OOK connectivity has

the potential to revolutionize datacom applications

Number of components Footprint Cost

Simplicity Robustness

Energy efficiency

• High-speed modulators and the underlying technology for high-speed electronics may:

Define a new base for operating baud-rates

400G and 1T systems Parallelism

High-order formats

Coherence technology

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Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 4

State of the art on 100G optical modulators

Two technologies with proven 100G potential

InP travelling wave EAM (InP-TWEAM)

• Amplitude modulation only

M. Chacinski et al, JLT 27, 16, 2009

S. R. Nuccio et al, OFC 2011, JThA30

Mach-Zehnder modulator based on electro-optic polymers operating at 100 Gb/s

Single device demonstrations rather than complete transmitter solutions

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Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 5

High speed electronics so far…

InP-DHBT technology has a proven potential for:

• High speed operation

• High breakdown voltage

2:1 MUX and RF-drivers based on InP-DHBT technology and

operating at 100 Gb/s have already been demonstrated

However:

they have never been integrated with the optical part of 100G transmitter in order to improve performance and reduce cost

HECTO project HECTO project

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Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 6

Optical sub-assembly

• Single mode waveguides

• Vpi =3.5 V

• High EO coefficient of the core material when poled (65 pm/V)

• Mach-Zehnder modulator on EO polymer platform

• Hybrid integration of an InP DFB laser at 1550 nm

• 2 dB loss at the polymer/InP interface

• 90o rotation of the TE laser due to the properties of the MZM

1.1 cm

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Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 7

Integration of MUX and RF-driving functionalities in a single circuit

Developing an integrated 100G transmitter

Development of a MUX-DRV circuit using 0.7 µm InP-DHBT technology

It receives two 50 Gb/s data signals and a 50 GHz input clock

1.5 mm

1.2 mm

2x2V differential output

Power consumption equal to 2W

Page 8: Integrated Transmitter for 100 Gb/s OOK Connectivity Based ......Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 1 Integrated Transmitter

Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 8

Assembly and packaging

Optical sub-assembly Output fiber

MUX-DRV chip Data1 Data2 Clock

6.5 cm

2 cm

Alumina substrate

Alumina stiplines (50 Ohm impedance) at the MUX-DRV input

Short (<150 µm) wire-bonds at the MUX-DRV output

Lensed fiber at the optical output (1.5 dB coupling loss)

8.5 dB total optical loss

0.8 dBm output power at the transmission peak of the MZM

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Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 9

Generation of 231-1 PRBS data signals at 80 to 100 GB/s

1:2 DEMUX using EAM and 1:4 electrical DEMUX to acquire 8x10Gb/s channels

BER measurements on all 8x10Gb/s channels

Experimental setup

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Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 10

Eye-diagram-based evaluation

Experimental results

Timing-jitter (rms) at all data rates <1 ps

0.5 nm 10 dB/div 10 ps

10 ps

10 ps

0.5 nm 10 dB/div

0.5 nm 10 dB/div

ER = 14.1 dB

ER = 13.6 dB

ER = 13.5 dB

80 Gb/s

90 Gb/s

100 Gb/s

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• 80 Gb/s stream was 1:2 demultiplexed using EAM

BER measurements

• Further demultiplexing to 10 Gb/s using electrical DEMUX

10 ps/div 10 ps/div Tributary 1 Tributary 2

10 ps/div Reference

Lower power penalty at 80G as well as error-free operation at 100G is expected with shorter optical switching windows

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Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 12

Summary

• Presentation of the first integrated transmitter for NRZ-OOK operation directly at 100 Gb/s.

• The transmitter relies on a EO polymer Mach-Zehnder modulator and the hybrid integration of:

• Evaluation through eye-diagrams and BER measurements in 80-100 Gb/s reveal high-quality performance.

1550 nm DFB laser

InP-DHBT MUX-DRV electronic circuit.

• Next steps include:

The use of new MUX-DRV designs

Complex monolithic and hybrid integration on the EO platform for modules of higher functionality

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Direct 100G connectivity with optoelectronic POLYmer-InP integration for data center SYStems 13

Acknowledgment

www.ict-polysys.eu

Thank you for your attention!

The work is supported by EU Commission