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Page 1: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based
Page 2: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based
Page 3: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based

m6

m6freq = 5.800 GHzMaxGain1 = 11.897

Max

Gai

n1

Max

Gai

n1

freq, GHz

freq, GHz

NF

min

NF

min

freq, GHz

freq, GHz

Page 4: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based
Page 5: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based
Page 6: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based

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SUPPLEMENTARY EXAMINATIONS : 2018-2019 ......2019/08/01  · SL.NO STUDENT NAME HALLTKT. EXAM TYPE INT EXT INT EXT INT EXT INT EXT INT EXT INT EXT INT EXT INT EXT INT EXT MAX MARKS

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31-35 int ele 07 - journals-sathyabama.com int ele 07.pdf · plc sensor 5 sensor 4 valve nozzle clamping cylinder caps container sensor2 sensor 3 sensor e conveyor clamping cylinder

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