innovation in a semiconductor industry · sitael, thales alenia space italia, imt, red cats, unipd...

LFoundry S.r.l. All rights reserved.

Innovation in a

Semiconductor Industry

Sergio Galbiati – Vice-Chairman

Confidential - LFoundry S.r.l. All rights reserved.2

Outline

• LFoundry Introduction

• Innovation Opportunities

• Development Perspective

LFoundry S.r.l. All rights reserved.3

LFoundry and the Avezzano Fab

Key Facts

o Located in Avezzano, (L’Aquila), Italy

o Founded: May, 1989

o 8” capacity of 40.000 wafer/month

o ~230M$ turnover in 2017

o ~1500 employees


Technology at a Glance

Key Feature

Avezzano

Fab Capability

65nm Smallest Litho Feature90nm Volume ProductionAl and Cu Metallization

Basic FOT

CMOS Platform

Technology Nodes:150nm110nm

Technology

Specialization

Optical Sensors (CIS, Discrete PD, SiPM)Analog and Mixed SignalSmart Power (LDMOS)

Special

Modules

Back-side Process Wafer Thinning and Stacking

Lithographic Stitching


Outline





Innovation Opportunities

6

Boundary conditions Consolidated 8” fab and manufacturing infrastructure Large volume production Technology platform till 90nm node

Innovation areas, expected effects and key contributors• Manufacturing efficiency cost reduction

- industrial-, chemistry-, electronic-engineering …..

• Process transfer and optimization production improvements- chemistry, physics, material science …..

• New module development technology added value- chemistry, material science, device physics …..

• Innovative device development broader functionality- device physics, electronic-engineering, material science …..


Optical Sensor Strategy

Infrared

Visible Light

Automotive

Industrial / Machine Vision

Medical

High Speed

Mobile

DSLR

X-ray

Photo Diode

Sensors

Highend CIS CMOS Image

Sensors

Photo Detectors,

SiPM

Standard CIS CMOS Image

Sensors

CMOS-SPAD

SiPM/Sensor-ASIC

Integration

Silicon Photo Multiplier

e.g. particle accelerator

detector magnetic

Resonance

tomography

stand alone

process

discrete

photo diode

Single Photo Avalanche Detector

Integrated inside CMOS

FSI (incl. light pipes)

Global shutter

BSI

SiPM with

e.g stacked

CMOS

HEP(high energy physic)

3D Imaging

Time of FlightSPAD

Use imaging technology & application knowhow to service full range of optical sensing: analog PDs …CIS ... to high-end 3D


CIS Pixel – New Module Developments

Metal Recess

Stitching (customer / design specific development)

wafer map

Customized Wafer Type

Deep Photo Diode

Pixel Simulation Service

Light Pipes and Optical Stack

Optimization

Microlenses

Bayer filters

Photodiodes

Access transistors

Metal layer

Max implant energy capability:

Boron 2800 keV

Phosphorous 4800 keV

Implant masking approach:

Resist up to 15:1 Aspect Ratio

Hard mask

pixel array

standard deep

optical simulation

High refractive index Polymer (n = 1.6-1.7)

ARC & stack formation

T-CAD

Isolation Implants

Modules for Global

Shutter

Buried Tungsten Light Shield

Metal ARC


Source: Yole

Hybrid Wafer Bonding for CIS


Single Photon Detection Technologies

Single photon

detection

PMTPhotoMultiplier Tubes

APD

Avalanche Photodiode

SPAD

Single Photon Avalanche Diode

SiPM

Silicon PhotoMultiplier

SPAD / SiPM are in production at LFoundry

Main applications:• Medical (PET)

• Automotive (LIDAR, ToF)

• Industrial (ToF for quality check, Robotics)

• Science (Astronomy, Space, Dark Matter)

• Geography (City mapping by LIDAR)


Parameters

(@ room T)

NUV-HD

Cell Size 25 - 40 µm

Fill Factor 75% - 85%

Breakdown Voltage 26.5 V

Max PDE 55% @ 420 nm

Gain > 106

Peak PDE λ 410 nm

DCR (20°C) < 150 kHz/mm2 @5VoV

DiCT 20%

DeCT + AP 2%

Timing Jitter (FWHM) ~ 20ps (single cell)

LF/FBK SiPM Technology

Front Side SiPM

Key process features:• DTI (Deep Trench Isolation)

• Deep implant Photo Diode

• Quenching resistor formation

• Dielectric layers deposition/etch

• Metal line formation

• Passivation layer

SiPM technology developed by Fondazione Bruno Kessler (FBK)

at 6”, transferred to LF for large volume production at 8”, with

further development


Outline





2016 2017 2018 2019 2020

150nm

Platform

110nm

Platform

Special

Modules/

New

Technology

Perspective Technology Roadmap

13

New BS-Devices

Back-Side BS-LDMOS (Gen1 80V – Gen2 200V)

Automotive

CMOS Image Sensor (CIS)

Hybrid Bonding

SPAD – Silicon PhotoMultiplier (SiPM)

Silicon Photonics


Innovative Device: BackSide p-LDMOS

n+

p-EPI

Schematic of novel

BCD technology

using wafer backside

processing

Same benefits of the SOI

approach, more cost

effective

Developed a novel BCD technology which offers all advantages of SOI technology but with lower manufacturing cost: the substrate is to a large extent removed and the devices are completed by manufacturing processes performed on the thinned wafer backside (LFoundry patent)


New Architecture: Hybrid Wafer Bonding

Source: Experi


Development Collaboration: Funded Project

Project Acronym End Date Objectives Partners Project Type

SATHERNUS 12/31/2020SOC multipurpose and Antenna for Avionic and Space applications

Thales Alenia Space, Elital Reg - POR FESR

SEED 31/12/2018

To develop of a state-of-the-art technology for the realization of monolithic fully-depleted radiation sensors (enabling the realization of a fast and efficient pixelated sensor with integrated electronics).

INFN MIUR - INFN

FCS_Ag.Digitale 31/12/2018 LFoundry RnD activities Only LFoundry MiSE - FCS

PhD_Italent 31/12/2019Co-funded program to facilitate PhD graduated in high tech industries

Only LFoundry MIUR - CRUI

GSTP_LF15A_Eval 31/12/2018Rad Hard characterization for LFoundry 150 nm technolgy

SITAEL, Thales Alenia Space Italia, IMT, Red Cats, UniPD ESA Tender

NANOSTREEM 31/12/2018Nanomaterials: STRategies for Safety Assessments in advanced Integrated Circuits Manufacturing

Several of the first European players in the Semiconductor Field

EU - H2020 CSA

SUPERTWIN 31/12/2018

Will develop the new generation of optical microscope systems, exploiting the properties of entangled photons to acquire images at a resolution beyond the classical Rayleigh limit of about half the photon wavelength, demonstrating a radically new line of technology for super-resolution imaging devices utilizing the principles of quantum optics.

FBK, CSEM, Ecole Polytechnique Federale de Lausanne, III-V Lab, Single Quantum, University of Bern, Institute of Physics, National Academy of Sciences of Belarus

EU - H2020 FET

Low Flux CMOS 31/01/2018 Pixel Design and Silicon provide Caeleste, ESA ESA Tender

Life BIT-MAPS 31/12/2018

Will establish a pilot plant that will demonstrate a new and never-before attempted process for the treatment of effluents from electronics and semiconductor manufacturing, introducing more efficient treatment technologies that will help reduce Tetramethylammonium hydroxide (TMAH) pollution at source.

UnivAQ, BME, BFC EU - H2020 Life

Productive 4.0 31/12/2019Electronics and ICT as enabler for digital industry and optimized supply chain management covering the entire product lifecycle.

More than 100 european partner (LE, SME, RnD center and Universities)

EU/MIUR - ECSEL


Technology for the Local Network

17

Opportunity to create a positive interactions among the local microelectronic elements and expertise (product company, design house, foundry, research center, university, institution, etc..)

Few examples:• Technology exploitation

Space application 150nm platform for ESA project (ASI)

• Technology transfer Science and industrial application Silicon Photon Multiplier (SiPM) from FBK

• Technology development Improved sensor INFN SEED project

• Technology sharing Physical characterization techniques Open Lab project

HT.III.D

THANK YOU

innovation in a semiconductor industry · sitael, thales alenia space italia, imt, red cats, unipd...

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