ina 102

13
INA102 FEATURES LOW QUIESCENT CURRENT: 750μA max INTERNAL GAINS: 1, 10, 100, 1000 LOW GAIN DRIFT: 5ppm/° C max HIGH CMR: 90dB min LOW OFFSET VOLTAGE DRIFT: 2μV/° C max LOW OFFSET VOLTAGE: 100μV max LOW NONLINEARITY: 0.01% max HIGH INPUT IMPEDANCE: 10 10 APPLICATIONS AMPLIFICATION OF SIGNALS FROM SOURCES SUCH AS: Strain Gages (Weigh Scale Applications) Thermocouples Bridge Transducers REMOTE TRANSDUCER AMPLIFIER LOW-LEVEL SIGNAL AMPLIFIER MEDICAL INSTRUMENTATION MULTICHANNEL SYSTEMS BATTERY POWERED EQUIPMENT DESCRIPTION The INA102 is a high-accuracy monolithic instrumen- tation amplifier designed for signal conditioning applications where low quiescent power is desired. On-chip thin-film resistors provide excellent tempera- ture and stability performance. State-of-the-art laser- trimming technology insures high gain accuracy and common-mode rejection while avoiding expensive external components. These features make the INA102 ideally suited for battery-powered and high-volume applications. The INA102 is also convenient to use. A gain of 1, 10, 100, or 1000 may be selected by simply strapping the appropriate pins together. A gain drift of 5ppm/°C in low gains can then be achieved without external adjustment. When higher-than-specified CMR is required, CMR can be trimmed using the pins pro- vided. In addition, balanced filtering can be accom- plished in the output stage. ® International Airport Industrial Park Mailing Address: PO Box 11400 Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd. Tucson, AZ 85706 Tel: (520) 746-1111 Twx: 910-952-1111 Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132 Low Power INSTRUMENTATION AMPLIFIER ABRIDGED DATA SHEET For Complete Data Sheet Call Fax Line 1-800-548-6133 Request Document Number 10523 A 1 A 2 A 3 14 2 8 4.44k40440.045pF 1 16 13 11 5pF 20k20k20k7 6 15 10 3 4 5 20k20k20k5pF 5pF 12 9 V+ V– © 1985 Burr-Brown Corporation PDS-523G Printed in U.S.A. October, 1993 SBOS137

Upload: erick-gio

Post on 28-Sep-2015

215 views

Category:

Documents


0 download

DESCRIPTION

ampli de instrumentacion

TRANSCRIPT

  • INA102

    FEATURESl LOW QUIESCENT CURRENT: 750A maxl INTERNAL GAINS: 1, 10, 100, 1000l LOW GAIN DRIFT: 5ppm/C maxl HIGH CMR: 90dB minl LOW OFFSET VOLTAGE DRIFT:

    2V/C maxl LOW OFFSET VOLTAGE: 100V maxl LOW NONLINEARITY: 0.01% maxl HIGH INPUT IMPEDANCE: 1010

    APPLICATIONSl AMPLIFICATION OF SIGNALS FROM

    SOURCES SUCH AS:Strain Gages (Weigh Scale Applications)ThermocouplesBridge Transducers

    l REMOTE TRANSDUCER AMPLIFIERl LOW-LEVEL SIGNAL AMPLIFIERl MEDICAL INSTRUMENTATIONl MULTICHANNEL SYSTEMSl BATTERY POWERED EQUIPMENT

    DESCRIPTIONThe INA102 is a high-accuracy monolithic instrumen-tation amplifier designed for signal conditioningapplications where low quiescent power is desired.On-chip thin-film resistors provide excellent tempera-ture and stability performance. State-of-the-art laser-trimming technology insures high gain accuracy andcommon-mode rejection while avoiding expensiveexternal components. These features make the INA102ideally suited for battery-powered and high-volumeapplications.The INA102 is also convenient to use. A gain of 1, 10,100, or 1000 may be selected by simply strapping theappropriate pins together. A gain drift of 5ppm/C inlow gains can then be achieved without externaladjustment. When higher-than-specified CMR isrequired, CMR can be trimmed using the pins pro-vided. In addition, balanced filtering can be accom-plished in the output stage.

    International Airport Industrial Park Mailing Address: PO Box 11400 Tucson, AZ 85734 Street Address: 6730 S. Tucson Blvd. Tucson, AZ 85706

    Tel: (520) 746-1111 Twx: 910-952-1111 Cable: BBRCORP Telex: 066-6491 FAX: (520) 889-1510 Immediate Product Info: (800) 548-6132

    Low PowerINSTRUMENTATION AMPLIFIER

    ABRIDGED DATA SHEETFor Complete Data Sheet

    Call Fax Line 1-800-548-6133Request Document Number 10523

    A1

    A2

    A3

    14

    2

    8

    4.44k

    404

    40.04

    5pF

    1 16

    13

    11

    5pF

    20k20k20k

    7

    6

    15

    10

    3

    4

    5

    20k20k20k

    5pF5pF

    12 9

    V+ V

    1985 Burr-Brown Corporation PDS-523G Printed in U.S.A. October, 1993

    SBOS137

  • SPECIFICATIONSELECTRICALAt TA = +25C with 15VDC power supply and in circuit of Figure 2, unless otherwise noted.

    INA102AG INA102CG INA102KP/INA102AUPARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITSGAINRange of Gain 1 1000 * * * * V/VGain Equation, External, 20% G = 1 + (40k/RG)(1) * * V/VError, DC: G = 1 TA = +25C 0.1 0.05 0.15 %

    G = 10 TA = +25C 0.1 0.05 0.35 %G = 100 TA = +25C 0.25 0.15 0.4 %G = 1000 TA = +25C 0.75 0.5 0.9 %G = 1 TA = TMIN to TMAX 0.16 0.08 0.21 %G = 10 TA = TMIN to TMAX 0.19 0.11 0.44 %G = 100 TA = TMIN to TMAX 0.37 0.21 0.52 %G = 1000 TA = TMIN to TMAX 0.93 0.62 1.08 %

    Gain Temp. CoefficientG = 1 10 5 * ppm/CG = 10 15 10 * ppm/CG = 100 20 15 * ppm/CG = 1000 30 20 * ppm/C

    Nonlinearity, DCG = 1 TA = +25C 0.03 0.01 * % of FSG = 10 TA = +25C 0.03 0.01 * % of FSG = 100 TA = +25C 0.05 0.02 * % of FSG = 1000 TA = +25C 0.1 0.05 * % of FSG = 1 TA = TMIN to TMAX 0.045 0.015 * % of FSG = 10 TA = TMIN to TMAX 0.045 0.015 * % of FSG = 100 TA = TMIN to TMAX 0.075 0.03 * % of FSG = 1000 TA = TMIN to TMAX 0.15 0.1 * % of FS

    RATED OUTPUT

    Voltage RL = 10k (|VCC| 2.5) * * VCurrent 1 * * mAShort Circuit Current(2) 2 * * mAOutput Impedance, G = 1000 0.1 * *

    INPUT

    OFFSET VOLTAGEInitial Offset(3) TA = +25C 300 300/G 100 200/G * V

    INA102AU 500 300/G Vvs Temperature 5 10/G 2 5/G * V/Cvs Supply 40 50/G 10 20/G * V/V

    vs Time (20 + 30/G) * * V/moBIAS CURRENTInitial Bias Current

    (Each Input) TA = TMIN to TMAX 25 50 6 30 * * nAvs Temperature 0.1 * * nA/Cvs Supply 0.1 * * nA/V

    Initial Offset Current TA = TMIN to TMAX 2.5 15 2.5 10 * * nAvs Temperature 0.1 * * nA/C

    IMPEDANCEDifferential 1010 || 2 * * || pFCommon-Mode 1010 || 2 * * || pFVOLTAGE RANGERange, Linear Response TA = TMIN to TMAX (|VCC| 4.5) * * VCMR With 1k Source Imbalance

    G = 1 DC to 60Hz 80 94 90 * 75 * dBG = 10 DC to 60Hz 80 100 90 * * * dBG = 10 to 1000 DC to 60Hz 80 100 90 * * * dB

    NOISEInput Voltage Noise

    fB = 0.01Hz to 10Hz 1 * * Vp-pDensity, G = 1000: fO = 10Hz 30 * * nV/Hz

    fO = 100Hz 25 * * nV/HzfO = 1kHz 25 * * nV/Hz

    Input Current NoisefB = 0.01Hz to 10Hz 25 * * pAp-pDensity: fO = 10Hz 0.3 * * pA/Hz

    fO = 100Hz 0.2 * * pA/HzfO = 1kHz 0.15 * * pA/Hz

  • ORDERING INFORMATION

    PRODUCT PACKAGE TEMPERATURE RANGE

    INA102AG 16-Pin Ceramic DIP 25C to +85CINA102CG 16-Pin Ceramic DIP 25C to +85CINA102KP 16-Pin Plastic DIP 0C to +70CINA102AU 16-Pin Plastic SOIC 25C to +85C

    ABSOLUTE MAXIMUM RATINGSSupply ................................................................................................ 18VInput Voltage Range .......................................................................... VCCOperating Temperature Range ......................................... 25C to +85CStorage Temperature Range: Ceramic .......................... 65C to +150C

    Plastic, SOIC .................. 55C to +125CLead Temperature (soldering, 10s) ............................................... +300COutput Short Circuit Duration .................................Continuous to Ground

    PIN CONFIGURATION

    Offset Adjust10 Gain

    100 Gain

    1000 Gain

    1000 Gain Sense

    Gain Sense

    Gain Set

    CMR Trim

    Offset Adjust+In

    In

    Filter

    +V

    Output

    Common

    V

    1

    2

    3

    4

    5

    6

    7

    8

    16

    15

    14

    13

    12

    11

    10

    9

    CC

    CC

    x

    x

    x

    x PACKAGE INFORMATIONPACKAGE DRAWING

    PRODUCT PACKAGE NUMBER(1)

    INA102AG 16-Pin Ceramic DIP 109INA102CG 16-Pin Ceramic DIP 109INA102KP 16-Pin Plastic DIP 180INA102AU 16-Pin SOIC 211

    NOTE: (1) For detailed drawing and dimension table, please see end of datasheet, or Appendix C of Burr-Brown IC Data Book.

    Top View DIP/SOIC

    ELECTRICAL (CONT)INA102AG INA102CG INA102KP/INA102AU

    PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS

    DYNAMIC RESPONSE

    Small Signal,3dB Flatness VOUT = 0.1Vrms

    G = 1 300 * * kHzG = 10 30 * * kHzG = 100 3 * * kHzG = 1000 0.3 * * kHz

    Small Signal,1% Flatness VOUT = 0.1Vrms

    G = 1 30 * * kHzG = 10 3 * * kHzG = 100 0.3 * * kHzG = 1000 0.03 * * kHz

    Full Power, G = 1 to 100 VOUT = 10V, RL = 10k 1.7 2.5 * * * * kHzSlew Rate, G = 1 to 100 VOUT = 10V, RL = 10k 0.1 0.15 * * * * V/sSettling Time RL = 10k, CL = 100pF0.1%: G = 1 10V Step 50 * * s

    G = 100 360 * * sG = 1000 3300 * * s

    0.01%: G = 1 10V Step 60 * * sG = 100 500 * * sG = 1000 4500 * * s

    POWER SUPPLY

    Rated Voltage 15 * * VVoltage Range 3.5 18 * * * * VQuiescent Current VO = 0V,

    TA = TMIN to TMAX 500 750 * * * * A

    TEMPERATURE RANGE

    Specification 25 +85 * * 0 +70 CINA102AU 25 +85 C

    Operation RL > 50k(2) 25 +85 * * 25 +85 CStorage 65 +150 * * 55 +125 C

    *Specification same as for INA102AG.NOTES: (1) The internal gain set resistors have an absolute tolerance of 20%; however, their tracking is 50ppm/C. RG will add to the gain error if gains other than1, 10, 100, or 1000 are set externally. (2) At high temperature, output drive current is limited. An external buffer can be used if required. (3) Adjustable to zero.

  • WARM-UP DRIFT vs TIME50

    40

    30

    20

    10

    0

    Chan

    ge in

    Inpu

    t Offs

    et V

    olta

    ge (m

    V)

    0 1 2 3 5

    Time (ms)4

    GAIN vs FREQUENCY

    Gai

    n (dB

    )

    80

    60

    40

    20

    0

    20

    Frequency (Hz)10 1M100 1k 10k 100k

    G = 1000

    G = 100

    G = 10

    G = 1 1% Error

    VOUT = 0.1Vrms

    PAD FUNCTION1 Offset Adjust2 X10 Gain3 X100 Gain4 X1000 Gain5 X1000 Gain Sense6 Gain Sense7 Gain Set8 CMR Trim9 VCC

    PAD FUNCTION10* Common11 Output12 +VCC13 Filter14 In15 +In16 Offset Adjust17 (A1 Output)18 (A2 Output)

    * Glass covers upper one-third of this pad.Substrate Bias: Electrically connected to V supply.NC: No Connection.

    MECHANICAL INFORMATIONMILS (0.001") MILLIMETERS

    Die Size 142 x 104 5 3.61 x 2.64 0.13Die Thickness 20 3 0.51 0.08Min. Pad Size 4 x 4 0.10 x 0.10Backing GoldINA102 DIE TOPOGRAPHY

    TYPICAL PERFORMANCE CURVESAt +25C and in circuit of Figure 2 unless otherwise noted.

    COMMON-MODE REJECTION vs SOURCE IMBALANCE120

    100

    80

    60

    40

    Com

    mon

    -Mod

    e Re

    jectio

    n (dB

    )

    100 1k 10k 100k 1M

    Source Resistance Imbalance ( )

    RIMB20Vp-p5Hz

    10k

    G = 10 to 1000

    G = 1

    COMMON-MODE REJECTION vs FREQUENCY

    Com

    mon

    -Mod

    e Re

    jectio

    n (dB

    )

    Frequency (Hz)1 100 1k

    120

    100

    80

    60

    4010

    V = 20Vp-pIN0 Source Imbalance

    G = 1

    G = 10

    G = 100G = 1000

  • POWER SUPPLY REJECTION vs FREQUENCY125

    100

    75

    50

    25

    0

    Pow

    er S

    uppl

    y Re

    jectio

    n (dB

    )

    1 10 100 1k 10k

    Frequency (Hz)

    Gain = 1000

    Gain = 100

    Gain = 10

    Gain = 1

    INPUT NOISE VOLTAGE vs FREQUENCY1000

    100

    101 10 100 1k 10k

    Frequency (Hz)

    Inpu

    t Noi

    se V

    olta

    ge (n

    VH

    z)

    G = 1

    G = 10

    G = 100, G = 1000

    PEAK-PEAK VOLTAGE NOISE vs GAIN1000

    100

    10

    1Tota

    l Inp

    ut P

    refe

    rred

    Noise

    Vol

    tage

    (Vp

    -p)

    1 10 100 1000

    Gain (V/V)

    See Applications SectionR = 0S

    R = 1MS

    R = 100kS

    Bandwidth = 1Hz to 1MHz

    RS

    500k500k

    SETTLING TIME vs GAIN

    Settl

    ing

    Tim

    e (m

    s)

    Gain (V/V)1 10 100 1000

    10

    1

    0.1

    0.01

    L

    RC

    L = 10k= 1000pF

    0.01%

    0.1%1%

    STEP RESPONSE15

    10

    5

    0

    5

    10

    15

    Out

    put V

    olta

    ge (V

    )

    0 8

    Time (ms)1 2 3 4 5 6 7

    G = 1

    G = 1000L

    RC

    L = 10k= 1000pF

    QUIESCENT CURRENT vs SUPPLY1000

    900800700600500400300200100

    0

    Quies

    cent

    Cur

    rent

    (A)

    0 5 10 15 20

    Supply Voltage (V)

    VO = 10V(no load)

    VO = 0

    TYPICAL PERFORMANCE CURVES (CONT)At +25C and in circuit of Figure 2 unless otherwise noted.

  • GeCMCMRR

    ~

    ~

    ~ ~ ~

    e2

    e1

    e0ZaZCM

    eCM

    ed /2

    ed /2

    Zd

    ZCMea eb

    Gain Set

    DISCUSSION OFPERFORMANCEINSTRUMENTATION AMPLIFIERSInstrumentation amplifiers are differential-input closed-loopgain blocks whose committed circuit accurately amplifies thevoltage applied to their inputs. They respond mainly to thedifference between the two input signals and exhibit ex-tremely high input impedance, both differentially and com-mon-mode. The feedback networks of this instrumentationamplifier are included on the monolithic chip. No externalresistors are required for gains of 1, 10, 100, and 1000 in theINA102.An operational amplifier, on the other hand, is an open-loop,uncommitted device that requires external networks to closethe loop. While op amps can be used to achieve the samebasic function as instrumentation amplifiers, it is very diffi-cult to reach the same level of performance. Using op ampsoften leads to design tradeoffs when it is necessary to amplifylow-level signals in the presence of common-mode voltageswhile maintaining high-input impedances. Figure 1 shows asimplified model of an instrumentation amplifier that elimi-nates most of the problems associated with op amps.

    eO = eA + eBeA = G(e2 e1) = GeD

    G(e2 + e1) /2 GeCMCMRR CMRR

    eB =

    Gain set is pin-programmable for x1, x10, x100, x1000 in the INA102.

    eO = GeD +

    =

    FIGURE 1. Model of an Instrumentation Amplifier.

    THE INA102A simplified schematic of the INA102 is shown on the firstpage. A three-amplifier configuration is used to provide thedesirable characteristics of a premium performance instru-mentation amplifier. In addition, INA102 has features notnormally found in integrated circuit instrumentation amplifi-ers.

    The input buffers (A1 and A2) incorporate high performance,low-drift amplifier circuitry. The amplifiers are connected inthe noninverting configuration to provide the high input

    impedance (1010) desirable in instrumentation amplifierapplications. The offset voltage, and offset voltage versustemperature, are low due to the monolithic design, andimproved even further by state-of-the-art laser-trimmingtechniques.The output stage (A3) is connected in a unity-gain differentialamplifier configuration. A critical part of this stage is thematching of the four 20k resistors which provide thedifference function. These resistors must be initially wellmatched and the matching must be maintained over tempera-ture and time in order to retain good common-mode rejec-tion.All of the internal resistors are made of thin-film nichromeon the integrated circuit. The critical resistors are laser-trimmed to provide the desired high gain accuracy andcommon-mode rejection. Nichrome ensures long-term sta-bility and provides excellent TCR and TCR tracking. Thisprovides gain accuracy and common-mode rejection whenthe INA102 is operated over wide temperature ranges.

    USING THE INA102Figure 2 shows the simplest configuration of the INA102.The output voltage is a function of the differential inputvoltage times the gain.A gain of 1, 10, 100, or 1000 is selected by programming pins2 through 7 (see Table I). Notice that for the gain of 1000, aspecial gain sense is provided to preserve accuracy. Al-though this is not always required, gain errors caused byexternal resistance in series with the low value 40.04internal gain set resistor are thus eliminated.

    GAIN CONNECT PINS

    1 6 to 710 2 to 6 and 7

    100 3 to 6 and 71000 4 to 7 and separately 5 to 6

    TABLE I. Pin-Programmable Gain Connections.

    FIGURE 2. Basic Circuit Connection for the INA102.

    INA102

    ~

    +In

    In

    15

    7

    6

    14

    ~

    e2

    VCC

    9

    11

    Gain = 1

    Output

    1210

    1FTantalum

    1FTantalum

    10k+VCC

  • Other gains between 1 and 10, 10 and 100, and 100 and 1000can also be obtained by connecting an external resistorbetween pin 6 and either pin 2, 3, or 4, respectively (seeFigure 6 for application).G = 1 + (40/RG) where RG is the total resistance between thetwo inverting inputs of the input op amps. At high gains,where the value of RG becomes small, additional resistance(i.e., relays or sockets) in the RG circuit will contribute to again error. Care should be taken to minimize this effect.

    OPTIONAL OFFSET ADJUSTMENT PROCEDUREIt is sometimes desirable to null the input and/or output offsetto achieve higher accuracy. The quality of the potentiometerwill affect the results; therefore, choose one with goodtemperature and mechanical-resistance stability.The optional offset null capabilities are shown in Figure 3. R4adjustment affects only the input stage component of theoffset voltage. Note that the null condition will be disturbedwhen the gain is changed. Also, the input drift will beaffected by approximately 0.31V/C per 100V of inputoffset voltage that is trimmed. Therefore, care should betaken when considering use of the control for removal ofother sources of offset. Output offset correction can beaccomplished with A1, R1, R2, and R3, by applying a voltageto Common (pin 10) through a buffer amplifier. This bufferlimits the resistance in series with pin 10 to minimize CMRerror. Resistance above 0.1 will cause the common-moderejection to fall below 100dB. Be certain to keep this resist-ance low.

    INA102

    VCC

    101M

    OPA27

    A1

    1

    16

    R2 1k

    R1100k

    Output OffsetAdjust

    +15VDC

    15VDC

    R3

    15mV adjustment at the output.R4

    100k

    Input Offset Adjust

    FIGURE 3. Optional Offset Nulling.

    It is important to not exceed the input amplifiers dynamicrange. The amplified differential input signal and its associ-ated common-mode voltage should not cause the output ofA1 or A2 to exceed approximately 12V with 15V supplies,or nonlinear operation will result. To protect against mois-ture, especially in high gain, sealing compound may be used.Current injected into the offset pins should be minimized.

    OPTIONAL FILTERINGThe INA102 has provisions for accomplishing filtering withone external capacitor between pins 11 and 13. This single-pole filter can be used to reduce noise outside the signalbandwidth, but with some degradation to AC CMR.When it is important to preserve CMR versus frequency(especially at 60Hz), two capacitors should be used. Theadditional capacitor is connected between pins 8 and 10. Thiswill maintain a balance of impedances in the output stage.Either of these capacitors could also be trimmed slightly, tomaximize CMR, if desired. Note that their ratio tracking willaffect CMR over temperature.

    OPTIONAL COMMON-MODE REJECTION TRIMThe INA102 is laser-adjusted during manufacturing to assurehigh CMR. However, if desired, a small resistance can beadded in series with pin 10 to trim the CMR to an improvedlevel. Depending upon the nature of the internal imbalances,either positive or negative resistance value could be required.The circuit shown in Figure 4 acts as a bipolar potentiometerand allows easy adjustment of CMR.

    FIGURE 4. Optional Circuit for Externally Trimming CMR.

    TYPICAL APPLICATIONSMany applications of instrumentation amplifiers involve theamplification of low-level differential signals from bridgesand transducers such as strain gages, thermocouples, andRTDs. Some of the important parameters include common-mode rejection (differential cancellation of common-modeoffset and noise, see Figure 1), input impedance, offsetvoltage and drift, gain accuracy, linearity, and noise. TheINA102 accomplishes all of these with high precision atsurprisingly low quiescent current. However, in higher gains(>100), the bias current can cause a large offset error at theoutput. This can saturate the output unless the source imped-ance is separated, e.g., two 500k paths instead of one 1Munbalanced input. Figures 5 through 16 show some typicalapplications circuits.

    1k

    OPA177

    1k

    20CMRAdjust

    1k

    1kINA102

    Procedure:1. Connect CMV to both inputs.2. Adjust potentiometer for near zero at the output.

    10Common~

    eCM

    15

    14

  • 15

    4

    5

    6

    7

    14

    INA10211

    ResistanceBridge

    V

    R R

    R R

    e1

    e1

    Shield

    eIN

    e2

    +In

    In10

    +15V

    15V

    9

    12

    1000x 1

    16

    +15V

    OptionalOffset Adjust100k

    eOUT = 1000 (e2 e1)

    INA102 replaces classical three-op-ampinstrumentation amplifier.

    FIGURE 5. Amplification of a Differential Voltage from a Resistance Bridge.

    eOUT = G (eIN) RY 4.4k, 404, or 40 in gains Note: Gain drift will be higher than thatG = 1 + (40k/[RG + RY]) of 10, 100, or 1000 respectively. specified with internal resistors only.

    RG = (40k RY[G 1]) /(G 1)

    15

    3

    7

    6

    14

    INA10211

    Shield

    +In

    In

    10

    +15V

    15V

    9

    12

    100x

    eOUTTransduceror

    AnalogSignal

    TransformerNoise

    (60Hz Hum)

    Noise(60Hz Hum)

    RG

    FIGURE 6. Amplification of a Transformer-Coupled Analog Signal Using External Gain Set.

    15

    3

    7

    6

    14

    INA10211

    +In

    In

    10

    +15VDC

    +15VDC9

    12

    10x

    G = 100

    OPA27

    15VDC

    +VOFFSETTING

    500

    1M

    SpanAdjust

    10k

    VFC32/320/62

    HCPL-2731

    ISOSupply

    +15VDC

    15VDC

    +15VDC +15VDC15VDC

    Digital100

    4990

    15k

    KThermocouple

    1M

    IN914

    ColdJunction

    Compensation15VDC

    100kZero Adjust

    +15VDC

    15VDC15VDC

    Opto-Coupler

    Up-ScaleBurn-OutIndication

    FIGURE 7. Isolated Thermocouple Amplifier with Cold Junction Compensation.

  • FIGURE 8. ECG Amplifier or Recorder Preamp for Biological Signals.

    INA102

    15376

    14

    +In

    In

    x10011

    eOUT

    G = 100

    12

    910

    +9V

    100k

    100k

    eIN

    eOUT contains a midscaleDC voltage of +4.5V.

    FIGURE 9. Single Supply Low Power Instrumentation Amplifier.

    * Does not requireexternal isolationpower supply.

    Note that x1000 gain sense has notbeen used to facilitate simple switching.

    INA102

    1523476

    14

    +In

    In

    x10

    11

    eOUT

    1210

    1M

    eIN

    9

    +15

    VDC

    Inpu

    t Com

    mon

    15

    VDC

    ISO1003650

    or3656 *

    IsolationBarrier

    IsolationAmplifier

    722IsolationPowerSupply

    15VDC

    x1 x100x1000

    Bias CurrentReturn Resistor

    +15

    VDC

    Out

    put C

    omm

    on

    15VD

    C

    FIGURE 10. Precision Isolated Instrumentation Amplifier.

    15

    4

    5

    6

    7

    14

    INA10211

    +In

    In

    10

    +15VDC

    15VDC

    9

    12

    1000xG = 1000

    eOUT = 1Vp-pto isolation amplifier.RL

    RA

    LA

    eIN = 1mVp-p

  • * As shown channels 0 and 1 may be used for auto offset zeroing, and gain calibration respectively.

    FIGURE 11. Multiple Channel Precision Instrumentation Amplifier with Programmable Gain.

    FIGURE 12. 4mA to 20mA Bridge Transmitter Using Single Supply Instrumentation Amplifier.

    INA102

    10

    139

    11

    15V 15V

    PGA102 15

    12

    34

    5eOUT

    G = 1, 10, 100

    +15V

    16

    x10 x100Gain Select

    678

    G = 112

    76

    +In

    In

    15

    14

    15V

    +15V +15V

    D

    D

    15V

    +15V

    D

    D

    10k

    10k

    eIN

    Input Protection: D = FDH300 (Low Leakage)

    FIGURE 13. Programmable-Gain Instrumentation Amplifier Using the INA102 and PGA102.

    INA102

    INA102

    INA102

    INA102

    PGA100

    IN7IN6IN5IN4IN3IN2IN1IN0

    INA102

    VREF*

    eOUT

    ControlLogic

    ChannelSelect

    GainSelect

    CPCE

    e2

    e4

    e6

    e5

    INA102e3

    e1

    INA102

    15376

    14

    1512

    435

    XTR110

    11314

    109

    2

    G S

    D

    4mA to 20mA VLRLOPA27+6V

    40k

    60k

    1211

    +24V

    300

    910

    +10VREF

    40mV

    G = 100

    +2V to +10V

    +24V

    2N3055

    40 40

    20

    16

    4

    I O(m

    A)

    0VIN (mV)

    16

  • 15

    4

    5

    6

    7

    14

    INA10211

    10

    +15V

    15V

    9

    121000x

    eOUT

    eIN

    Ground Resistance

    V1

    FIGURE 14. Ground Resistance Loop Eliminator (INA102 senses and amplifies V1 accurately).

    Overall Gain = eOUT/eIN = 200

    15V

    INA102 11

    eOUT

    +15V

    12

    376

    9

    10

    15

    14

    eIN

    +In

    In

    x 100

    15V

    INA102 11

    +15V

    12

    376

    9

    10

    15

    14

    +In

    In

    x 100

    FIGURE 15. Differential Input/Differential Output Amplifier (twice the gain of one INA).

  • CONTROL S1 S2 S3 S4 S5 MODE

    1 Closed Closed Open Open Closed Signal Amplification0 Open Open Closed Closed Open Auto-Zeroing

    15V

    INA102 11

    +15V

    12

    376

    9

    10

    15

    14

    eIN

    +In

    In

    x 100

    OPA111or OPA121

    1k

    0.1F 1/2DG5043CJ

    Reference10

    DG5040CJ

    16

    8

    6 eOUT

    15V

    15 13 14

    +15V11

    15 13 14

    200sControl

    1

    4

    11

    16

    9

    5

    1

    S2

    S4

    S5

    1/2DG5043CJ

    S1

    S33

    All switches shown inLogic 0 switch state.

    FIGURE 16. Auto-Zeroing Instrumentation Amplifier Circuit.

    The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumesno responsibility for the use of this information, and all use of such information shall be entirely at the users own risk. Prices and specifications are subject to changewithout notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrantany BURR-BROWN product for use in life support devices and/or systems.

  • IMPORTANT NOTICE

    Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being relied on is current and complete. All products are soldsubject to the terms and conditions of sale supplied at the time of order acknowledgment, including thosepertaining to warranty, patent infringement, and limitation of liability.

    TI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with TIs standard warranty. Testing and other quality control techniques are utilized to the extentTI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except those mandated by government requirements.

    Customers are responsible for their applications using TI components.

    In order to minimize risks associated with the customers applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.

    TI assumes no liability for applications assistance or customer product design. TI does not warrant or representthat any license, either express or implied, is granted under any patent right, copyright, mask work right, or otherintellectual property right of TI covering or relating to any combination, machine, or process in which suchsemiconductor products or services might be or are used. TIs publication of information regarding any thirdpartys products or services does not constitute TIs approval, warranty or endorsement thereof.

    Copyright 2000, Texas Instruments Incorporated