PUBLIC

SONGLIN.CHEN@NXP.COM

AUGUST, 2016

APF-DES-T2226

IMPROVE THE RF

PERFORMANCE FOR

WIRELESS CONNECTIVITY

PUBLIC 1

Scope

• BL SAS Introduction

− Technology and value proposition

• Products and Application

− Wide band transistors

Generic

WLAN LNAs

− PIN Diodes

− Infrastructure LNA and MPA

PUBLIC 2

Focus Markets and Applications

GPS LNA

LTE LNA

WLAN LNA

WLAN FEIC

WLAN LNA-Switch

Cellular Base Stations

Set-Top-Box (DOCSIS)

Satellite DBS/VSAT

Access Point/Routers

Multimarket

Industrial/ISM

Broadband (Legacy)

Aerospace & Defence

Basestation LNA

Small Cells MPA

STB/DOCSIS LNA

Satellite LNA/MPA

Satellite RFIC (MO)

Car-2-x LNA/MPA

Mobile Infrastructure Multimarket &

Legacy

RF Discretes

ISM LNA

TV Tuning (Legacy)

Smartphones

Tablets

Wearables

Focus

Applications

BL SAS

Products and

Solutions

LNA = Low Noise Amplifier

MPA = Medium Power Amplifier

FEIC = Front End IC (LNA+Power Amplifier+Switch)

ISM = Industrial, Scientific and Medical

Market

Segment

PUBLIC 3

The BL Smart Antenna Solution Advantage A Technology Driven Component Play through Full Vertical Integration

• High Performance RF

Amplifiers

• End-to-End Solution

optimization

• Global RF Competence

Centers

• Local Applications and

Engineering Support

• Specialist RF Sales Team

• World Class

Manufacturing Capability

• Own Dual Sourced 8” fabs

• RF optimized assembly

and test

• Advanced RF packaging

• Scale and Quality, giving

tightest performance

distribution

• Leading Edge QUBIC SiGe:C

BiCMOS technology

• Low noise, RF switching and

high power capability uniquely

available in a single process

(monolithic die)

• In-house technology

development and optimization

Manufacturing SolutionsTechnology

Complete vertical integration leveraging >60B pcs annual production scale offers

the highest performance and quality with lowest cost of ownership

3

PUBLIC 4

Value Proposition and Product PortfolioRF Technology Participation

• Si-based high performance RF process – BiCMOS value proposition

− Excellent RF performance challenging GaAs

• And on top of that compared to GaAs:

− Many more levels of integration

− More robust & better repeatability

− Lower silicon cost structures

• The best mix that sets us apart!

• Flexibility – ASICs, tailored ASSPs

− Full set of design tools for RF ASIC

design by customer (COT) or in house

via selected partners

− RF knowledge/experience

• Full system offering – supports supplier reduction programs

− From RF discrete components to complex

RF ASICs (to RF Power and Data converters)

In-house NXP SiGe(C) product families:

• 5th, 6th and 7th generation wideband transistors

• Medium power amplifiers

• Low noise amplifiers

• Variable gain amplifiers

• Ultra linear broadband amplifiers

• Down converter ICs

• LO generators & Mixers

PUBLIC 5

High performance “QUBIC” SiGe(C) process

that replaces GaAs in targeted applications

SiGe(C) QUBIC4 Process Technology

Allows higher integration level (e.g. VGA

interfaces, features like bias setting, on/off)

Improved thermal performance (smaller footprint,

size, reliability)

Most robust/reliable (Active ESD protection)

Inherently superior reliability & manufacturability

High Performance RFwith new BiCMOS process technology

QUBIC4+ QUBIC4P

(future)

QUBIC4X

QUBIC4Xi

QUBIC

4mmW

OK for upto 30dBm

(P1dB), 2.5 GHz For Basestation,

backhaul, VSAT

Up to 60GHz

Ultra low noise

@1-5GHz

& can replace

4X and Xi

Ultra low

noise, 5-25

GHz,

Enabler for

GPS,

basestation

LNA

Good for RF-IC and low noise

up to 10 GHz.

High performance Mixer, PLL.

PUBLIC 8

World Class RF ManufacturingHighly Differentiated Processes and Manufacturing

SSMC - Singapore

NXP - Nijmegen

NXP - Guangdong

NXP - Malaysia

• NXP Owned Manufacturing

− Two 8” SiGe Fabs

ICN8 – NXP Nijmegen

SSMC – NXP Singapore - JV with TSMC

• SiGe Scale and Quality

− 1.4 Million Wafers produced

− >13 years of SiGe Manufacturing

− >4 Billion RF products in 2013

− Strong traction in Mobile driving sharp increase in demand

− ICN8 increasing 8” wafer capacity to 500,000+ wafers/year

− SSMC 8” wafer capacity 500,000+ wafers/year

• RF optimised Back-End (Assembly and Test)

− Leverages NXP multi-billion Units per year Operations

•

PUBLIC 9

WIDE BAND

TRANSISTORS

(WBT)

PUBLIC 10

Wide Band Transistors (WBT)

• BFU5xx Series Wide Band Transistors

− Broadband amplifiers up to 2 GHz

− AEC-Q101 qualified

− Broad range of package options

− Application

ISM applications (LNA’s, Oscillators, Drivers) in the consumer, industrial.

Automotive: RKE, TPMS, Satellite Radio, GPS

Other application: Optical modules, intelligent meter

• BFU6xx & BFU7xx Series Wide Band Transistors

− Broadband amplifiers up to 18GHz

− High gain, low noise

− Application

Satellite LNB: LNA, mixer, DRO

WLAN, ZigBee, Bluetooth

Automotive: GPS, SDARS, RKE

Mobile TV (CMMB, ISBD-Tmm)

Automated Meter Reading (AMR)

Security (radar, sensor)

PUBLIC 11

Wide Band Transistor OverviewPortfolio and application

Function LNAs, mixers, frequency multipliers, buffers High-linearity, high-output amplifiers and

drivers

Oscillators

Frequency

range

<2GHz <6GHz 6-10GHz 12-

18GHz

<2GHz <6GHz 6-10GHz 12-

18GHz

<6GHz 6-10GHz 12-

18GHz

Band type ISM433,

ISM866

L,S,C X, Ku low Ku high,

Ka

ISM433,

ISM866

L,S,C X, Ku low Ku high,

Ka

L,S,C X, Ku low Ku high,

Ka

BFU520* ●

BFU530* ●

BFU550* ●

BFU580* ●

BFU590* ●

BFU610F ● ● ●

BFU630F ● ● ● ● ●

BFU660F ● ● ● ● ●

BFU690F ● ● ● ● ●

BFU710F ● ● ●

BFU730F ● ● ● ● ● ● ● ●

BFU760F ● ● ● ● ● ●

BFU790F ● ● ●

• Multiple package types available Red = application note available on NXP.com

PUBLIC 12

BFU5xx Series WBT Selection Guide

PUBLIC 13

BFU520W 433MHz Demo Performance

Parameter Symbol EVB Unit

Supply Voltage VCC 3.6 V

Supply Current ICC 7 mA

Noise Figure NF 1 dB

Power Gain Gp 19 dB

Input Return Loss RLin -8 dB

Output Return Loss RLout -12 dB

Output third order intercept point OIP3 11 dBm

Operating Frequency is f = 433 MHz unless otherwise specified; Temp = 25 °C

0

2

4

6

8

10

12

14

16

18

20

22

200 300 400 500 600

|S21|^2

(dB)

Frequency (MHz)

Vsup = 3.6 V; Tamb = -40 °C

Fig9. Gain as a function of frequency; typical values

Vsup = 3.6 V;Tamb = -40 °CTamb = 25 °CTamb = 85 °CTamb = 125 °C

Insertion power gain as a function of frequency; typical values

-15

-10

-5

0

5

10

-50 0 50 100 150

PL(1dB)

(dBm)

Tamb (C)

Vsup = 3.2 VVsup = 3.6 VVsup = 4.0 V

Ouput power at 1dB gain compression as a function of ambient temperature; typical values

Gain over temp and Freq P1dB over temp and Vsup

25C

PUBLIC 14

-8

-6

-4

-2

0

2

4

6

8

10

-50 0 50 100 150

PL(1dB)

(dBm)

Tamb (C)

Vsup = 3.2 VVsup = 3.6 VVsup = 4.0 V

Ouput power at 1dB gain compression as a function of ambient temperature; typical values

0

2

4

6

8

10

12

14

16

18

20

600 700 800 900 1000

|S21|^2

(dB)

Frequency (MHz)

Vsup = 3.6 V; Tamb = -40 °C

Fig9. Gain as a function of frequency; typical values

Vsup = 3.6 V;Tamb = -40 °CTamb = 25 °CTamb = 85 °CTamb = 125 °C

Insertion power gain as a function of frequency; typical values

BFU530 866MHz Demo Performance

Gain over temp and Freq P1dB over temp and Vsup

25C

Parameter Symbol EVB Unit

Supply Voltage VCC 3.6 V

Supply Current ICC 10 mA

Noise Figure NF 1.1 dB

Power Gain Gp 16 dB

Input Return Loss RLin -8 dB

Output Return Loss RLout -12 dB

Output third order intercept point OIP3 17 dBm

Operating Frequency is f = 866 MHz unless otherwise specified; Temp = 25 °C

PUBLIC 15

FM LNA for Auto Active ANT

BFU520

15

Frequency Measurement Value Units

Power

Supply

Vcc 3.0 V

Current 5 mA

88 MHz

Gain 21.2 dB

NF 1.4 dB

RLin 8.6 dB

RLout 11.1 dB

98 MHz

Gain 21.2 dB

NF 1.5 dB

RLin 9.4 dB

RLout 11.4 dB

108 MHz

Gain 20.6 dB

NF 1.7 dB

RLin 6.9 dB

RLout 12.1 dB

PUBLIC 16

Gen 6 & Gen 7 Series RF WBT Selection Guide

• Feature

− Broadband amplifiers up to 18 GHz or even higher

6th Generation (ft=40GHz) typically used up to 6GHz

7th Generation (ft=110GHz) used up to 18GHz

− Low noise figure

− Lowest current consumption (3mA for 13.5dB gain @12GHz)

− SOT343 package (except BFU730LX, SOT883C)

• Application

− Satellite LNB, STB

− WLAN, 2.4GHz & 5.8GHz ISM bands

− Auto: GNSS, SDARS, Radar

− Other RF communication FE in the consumer, industrial.

PUBLIC 17

NXP WB LNAs for Auto Active ANT

17

Application LNA Spec Config. NXP type

Car FM radio active ANT

Freq: 65MHz ~ 162.5MHz

NF: 2~3dB

Gain 7~20 dB

OIP3: 39dBm (Shark fin with 3G/4G ANT)

one stage LNABFU5xx

GPS active ANT

Freq. 1.575Ghz

Gain > 30dB (2 stage LNAs)

NF: 0.7dB2-stages LNAs BFU6xx/7xx

SDARS active ANT

Freq: 2.320Ghz ~ 2.345Ghz

NF: 0.8 ~ 1.5dB

Gain: >30dB

IP1dB: -20dBm

2~3-stages LNAsBFU7xx/6xx

GPS + SDARS active ANT

Freq: 1.5Ghz ~ 2.4Ghz

NF: 1.5dB

Gain: 35dB

IP1dB: -20dBm

2~3-stages LNAs BFU6xx/7xxx

PUBLIC 18

NXP LNA Solution for Auto GPS ANT

BFU730F 1st LNA, BFU690F 2nd LNA (1.575GHz)Measurement Value Units

Vcc 3.3 V

Current 62 mA

Gain 35.4 dB

NF 0.7 dB

RLin 13 dB

RLout 11.7 dB

Isolation 45.6 dB

IP1dB -20.6 dBm

OP1dB 13.7 dBm

PUBLIC 19

NXP LNA Solution for SDARS

BFU730F 1st LNA, BFU690F 2nd LNA (2.33GHz)

http://www.nxp.com/documents/application_note/AN11066.pdf

Measurement Value Units

Vcc 3.3 V

Current 33 mA

Gain 34 dB

NF 0.8 dB

RLin 9.8 dB

RLout 14 dB

IP1dB > -20 dBm

PUBLIC 20

NXP WBT Solution for Watchdog (Radar detect)

BFU730F Oscillator, BFU660F IF Amplifier

Band Detect Range (GHz)

X (down) 9.85-9.95

X (up) 10.5-10.55

Ku 13.45-13.5

K 24.05-24.25

Ka 33.4-36

No Signal

Signal Detected

PUBLIC 21

NXP LNA Solution DVB-S (STB)

BFU760F (950-2150MHz)

NXP BFU760F

950MHz 1550MHz 2150MHz unit

Gain 14.5 13.9 12.2 dB

NF 2.1 2.0 2.0 dB

Rlin 8.0 15.2 11.4 dB

Rlout 14.9 28.5 14.6 dB

P1dB 13.9 13.5 10.9 dBm

OIP3 28.4 26.9 25.2 dBm

Kfactor >1 up to 18GHz

Components 15 pcs

PUBLIC 22

NXP PA Solution for AMR

BFU690F (470-510MHz)

Requirement Value Units

Modulation FSK

Frequency 470-510 MHz

Channel BW <200 kHz

Input Level 10(Max) dBm

Output Level 20 dBm

Supply Voltage 3.3 V

Current 85 mA

PUBLIC 23

WLAN LNAS

PUBLIC 24

WLAN LNA for Access Point / Router

IEEE802.11 (2.4GHz & 5GHz)• NXP has two solution of LNA for WLAN

AP/Router:

− WBT with the best performance and cost

Low NF

High Gain

Low current

Flexible design

− MMIC with easiest design

Minimum external part

Lowest spread RF performance

Integrated bypass, bias, temperature compensation, DC block, ESD protect

PUBLIC 25

2.4GHz & 5GHz MMIC LNA

Product Portfolio

• 802.11b/g/n and a/n/ac compliant

• Integrated:

− Smallest package[1.6*1.6*0.5 DFN]

− Operating supply voltage: 1.8-4.0 V

− Active Bias/Shutdown

− Full 50 ohm match

− Bypass

• Built-in jammer immunity for concurrent 2.4/5.8 GHz operation

Bias

RF outRF In

BYP EN Vcc

Spec BGU7224

(2.4 GHz)

BGU7258

(5-6 GHz)

Vcc 3.3 3.3 V

Icc 13 13 mA

Std Icc 2 1 µA

RF 2.4-2.5 4.9-5.925 GHz

Gain 15 13 dB

Gain Byp. -5.5 -7 dB

NF 1.0 1.6 dB

IP1dB -3 -4 dBm

IIP3 5.5 8 dBm

RL (in/out) <-10 <-10 dB

PUBLIC 26

Examples of Transistor LNA Apps Circuits & MMIC for 2.4GHz

• New application circuits can be generated upon request

PUBLIC 27

Examples of Transistor LNA Apps Circuits & MMIC for 5GHz

• New application circuits can be generated upon request

PUBLIC 28

RF DIODES:

PIN DIODES

PUBLIC 29

PIN Diodes

Function and Application• PIN diodes are widely used as variable resister in gain control functions and as RF switch

where low forward resistance and low internal loss are required.

• AEC-Q101 qualified

• Typical application

− Car Radio applications, especially together with NXP car radio IC’s. Car & mobile radio manufacturers.

− Mobile, diversity antenna tuner

− A long tail of customers in the industrial market where need switch or attenuator.

PUBLIC 30

PIN Diodes

Fast Search for Varies of Type and Package

• For parametric search please visit NXP website: http://www.nxp.com/parametrics

ANTIPARALLEL QUAD

SOD323 SOD523 SOD882D SOT23 SOT323 SOT23 SOT323 SOT23 SOT323 SOT363 SOT753

BAP55LX

BAP50-03 BAP50-02 BAP50LX BAP50-04 BAP50-04W BAP50-05 BAP50-05W

BAP51-03 BAP51-02 BAP51LX BAP51-04W BAP51-05W BAP51-06W

BAP55LX

BAP63-03 BAP63-02 BAP63LX BAP63-05W

BAP64-03 BAP64-02 BAP64LX BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64Q

BAP65-03 BAP65-02 BAP65LX BAP65-05 BAP65-05W

BAP70-03 BAP70-02 BAP70-04W BAP70-05 BAP70AM BAP70Q

SINGLE SERIES COMMON CATHODE COMMON ANODE

PUBLIC 31

Diversity ANT Tuner in Mobile Phone

BAP64LX• Auto tuning between 700-800MHz and 800-900MHz bands, 1.5dB improvement in sensitivity

• Low cost

• BAP64LX is used as a SPST switch to select the band

• Low current (2.5mA) in ON mode

• Only for diversity antenna

PUBLIC 32

Variable Attenuator

BAP70Q

PUBLIC 33

RF MMIC:

LNA AND MPA

PUBLIC 34

Infrastructure Product Offering

BGA 6589 7x24/27 7130 7020

P1dB 20 24/27 30 20 dBm

Gain 17 17/16 13 15 dB

Wideband, 0.4GHz to 2.7GHz

Medium Power Amplifier

Low Noise Amplifier

BGU805x BGU806x

NF 0.4dB, gain 18dB,

input/output matched.

Bypass LNA

PUBLIC 36

BGU8051-3: Frequency Coverage

• Three products to cover frequency spectrum:

− BGU8051: 500 – 1500 MHz

− BGU8052: 1500 – 2300 MHz

− BGU8053: 2300 – 5000 MHz

• Measured performance presented on next slides

Frequency Allocation (MHz)

BGU8051 BGU8052 BGU8053

PUBLIC 40

Bypass LNA : BGU806x

• Bypass function LNA

• Low noise figure: 1.5dB

• High Linearity: 36dBm

• Good internal matching, Best return loss

• Small DFN package: 3x3mm

PUBLIC 41

BGA6589/BGA7x2x / BGA713x

Fixed Gain Amplifiers• Full portfolio of single stage, wide band (0.4 – 2.7GHz) amplifiers ranging from

20dBm to 30dBm P1dB and OIP3 ranging to 45dBm.

• Si based allowing a competitive cost structure compared to GaAs based

equivalents.

• Fully ESD protected (HBM > 4kV).

PUBLIC 42

PUBLIC USE

Company Public information is information that has been declared public knowledge by the owner and can

freely be given to anyone inside or outside NXP without any possible damage to NXP

Public information can shared with anyone but only NXP spokespersons and nominated people can

represent NXP publicly

Click here for more information on security awareness