IceMOS Technology, Ltd.

Corporate Headquarters: Factory Location:7855 South River Parkway, Suite 122 5 Hannahstown HillTempe, AZ 85285 (USA) Belfast BT17 0LT (UK)

Phone: (602) 288-5870 Phone: +44 2890-574700Fax : (602) 288-5871 Fax : +44 2890-574746

IceMOS Technology, Ltd.Website: www.icemostech.com Year Founded: 2004Company Structure: Privately Held Employees: 35

Company Profile:

IceMOS Technology Ltd is a privately held company with a global sales presence using direct and distributor sales channels.

Originally founded as BCO Technologies in 1993, IceMOS has over 14 years of experience as a provider of value-added “Advance Engineered Substrates”. We have built a reputation in the market for excellent quality.

IceMOS welcomes projects requiring design or development work to truly match the customer’s needs and requirements.

Primary Business:

Thick Film (>1.5 µm) SOI Substrates- High Temperature Annealed Bonding- Standard Single Layer SOI

Si-Si Direct Bonded Wafers Substrates- Excellent Cost Alternative to Epi- Ultra High Resistivity Epi for RF Applications- High Resistivity Epi for Photodiode & Photo IC Applications

Double Side Polished Silicon Wafers- 100 and 150mm Diameters - Ultra flat (TTV < 1um)- Standard (TTV < 3um) - Thickness (100~500um and 200~600um)

Advance Engineered Substrate Wafers (SOI or Bulk Si)- Trench & Refilled SOI Substrate - Cavity Bonded SOI Substrates- Multiple Layer SOI Substrates - Through Silicon Via (TSV)- Customized to Desired Spec

Technical Expertise:

Deep Reactive Ion Etching (DRIE) With Refill Options- Etch processes capable up to 100µm deep trenches- Trenched areas up to 85% of exposed silicon area- Aspect ratios up to 40:1, with typical ratios from 10:1~15:1 in production

Silicon Wafer Bonding- High temperature anneal bonding

Wafer Thinning- Precision grind and polish with +/- 1µm absolute thickness and TTV of < 1µm

Company Attributes:

Engineering Expertise: Experienced design and manufacturing engineering support for development or mas-production

Cost Efficient: Low overhead structure in place without sacrificing customer satisfaction

Small and Flexible: Cost competitive batch manufacturing

Best in Class Quality Systems: - World Class Systems: ISO 9000:2000 quality systems- Complete Lot Tracking: Full batch history and wafer tracking available- In-house Failure Analysis: Equipment and expertise for in-process and post sales analysis

Factory Information:

Bonded Wafer Production: - 100, 125, 150, and 200mm wafer diameter capability- Over 5,000 square feet of clean-room production floor space

Modeling: - Full Device and Process Simulation (Silvaco Athena/ATLAS)

Processing:- Deep RIE process- Projection Alignment- Front & Backside contact alignment Oxidation (dry/wet)- LPCVD TEOS + Poly- Polysilicon & Oxide CMP Planarisation- Low Temp Oxide Passivation- Aluminium Metal deposition- Phos, Arsenic, Boron Implant

Memberships and Certifications:

Global Distribution Network:

Korea: Middle East:Dooson Inc DashroDooson Bldg. 1F 2 Bosmat St., P.O. Box 314767-30 Kuui-Dong, Kwangjin-Ku Shoham, Israel 73142Seoul, Korea 143-819 Tel: +972-52-3227484Tel : (82) 2 444 5375 Fax: +972-3-9793932Fax : (82) 2 444 4104 web: www.dashro.co.ilweb: www.dooson-inc.co.kr

Japan: Taiwan:Electronics and Materials Aceteam Corporation11-11 Funado-cho, Ashiya-shi Tai Yuen Hi-Tech Industrial ParkHyogo-ken 659-0093 3F-2, No. 26, Tai Yuen StreetJapan Chupei City, Hsinchu 302Tel: 0797-34-7007 TaiwanFax: 0797-34-7008 Tel: +886-3-552-6869web: www.eandmint.co.jp Fax: +886-3-552-6859

web: www.aceteam.com.tw

IceMOS Operating Locations

• Silicon Device (20um)• Buried Oxide (1um)• Silicon Device (70um)• Buried Oxide (1um)• Doped Polysilicon (1um)• Buried Oxide (1um)

Multi-Layer SOI Microfluidic Channels

SOI With Deep Trench Isolation

Cavity Bonded SOI

Engineered Substrate Photo Gallery:

TSV TSV (cut away)

Silicon Gears High Resolution Accelerometer

Engineered Substrate Photo Gallery: