horizontal-deflection output transistors · 2010-05-15 · 3 1 the photographs below show the...
TRANSCRIPT
Horizontal-DeflectionOutput Transistors
PRODUCT GUIDE
3
1
The photographs below show the products and their markings. The packages shown are is the straight-lead packages used for standard products.
Appearance
Package dimensions (Unit : mm)
TO-3P(H)IS TO-3P(LH)
TO-3P(LH)TO-3P(H)IS
Outline
2 Appearance, Package and Weight
Toshiba has developed a range of fifth-generation horizontal-deflection-output transistors (HV-Trs). Radical redesign of the emitter electrode and the contact pattern has yielded significant improvements, resulting in higher current density and superior electrical characteristics compared to those of fourth-generation products. Toshiba’s propriety glass-mesa structure results in a high breakdown voltage. Thanks to Toshiba’s wealth of experience and the wide variety of products which the company can offer, Toshiba horizontal-deflection-output transistors are used World-wide in color TVs and video display monitors.
ge
ge
ge
ge
ge
ge
ge
ge
ge
ge
ge
ge
ge
ge
ge
ge
ge
ge
2SC5411
5.5g ( typ. )
2SC5570
9.75g ( typ. )
3.6 ± 0.3 3.0 ± 0.315.5 ± 0.5
4.0
2.3 max
5.45
1 2 3
5.45
0.95 max
4.5
10.0
26.5
± 0
.5
22.0
± 0
.5
23.0
5.5
± 0.
3
2.0
3.3
0.9
– 0.
1 +
0.2
5
16.4
min
1.2
2.5
2.0
10˚
10˚
5˚5˚
5˚
1. Base2. Collector3. Emitter
20.5 max 3.3 ± 0.2
26.0
± 0
.520
.0 ±
0.6
6.0
11.0
1.5
4.0
2.0
2.50
3.0
1.0 – 0.25
5.45 ± 0.15 5.45 ± 0.15
+ 0.3
2.5
1 2 3
0.6
– 0.
10 +
0.2
5
1.5
2.8
5.2
max
2.0
1. Base2. Collector (heat sink)3. Emitter
1.5
4
3
High breakdown capability
Device Trends
4
Fifth generation of horizontal-deflection output transistors
Fourth generation of horizontal-deflection output transistors
TV Wide-screen TVsHDTVs / Projectors
Multimedia-compatible TVsDigital TVs
Video display monitors
• Wide-screen aspect ratio: (4 : 3) –> (16 : 9)• Large screen size• Flat screen• Low loss• Lower prices
• Enhancement of 1700 V product line• Low price due to reduction in chip size
• Development of 2000-V products• Development of products incorporating diodes for use in digital TVs • Shorter trr• Reduced saturation voltage VCE(sat) = 3 V (max)• High-current devices housed in TO-3P(H)IS packages 21-A products available• Reduced variation in product characteristics
• Reduced switching loss (tf parts) due to high-frequency operation tf = 150 ns (max)• Reduced saturation voltage at high currents VCE(sat) = 3 V (max)• High-current devices housed in TO-3P(H)IS packages 21-A products available• Increased allowable power dissipation TO-3P(H) IS 65 W –> 75 W TO-3P(LH) 200 W –> 220 W• Reduced variation in product characteristics
• Improved in screen resolution quality Screen resolution: 525p, 1125i, 780p Progressive system is improved Starting grand wave digital broadcasting Various appllications such as DVDs and Cable TVs• Various screen size• Flat screen• Low loss
• High horizontal frequency 21 inches fH = 120 kHz –> 135 kHz• Large screen size Standard size: 15 inches –> 17 inches• Low price Reduced part count (driving circuit and resonating capacitor are fixed)• Low loss• Flat screen
Market requirements
Emitter contact shape and chip size optimization
Market trends and the development of horizontal-deflection output transistors
Conventional comb type The product features a glass mesa structure,the use of which yields a wide forward- and reverse-biased safe operating area.
Chip design has been optimized using Toshiba simulation technology. The emitter's contact area has been widened by changing the contact shape below the emitter electrode from comb type to the new mesh type. As a result, the saturation voltage (VCE(sat)) and fall time (tf) have both been reduced, thus reducing switching loss.
1
Low saturation voltage
VCE(sat) = 3 V (max)Note: Used for 2SC-Series devices without damper diodes.
2
Wider range of optimum drive conditions
Fluctuation in optimum drive conditions due to variation in device quality has been minimized for ease of design.
3
Revised emitter contact shape and optimized chip size3
Fourth and fifth-generation mesh type
Toshiba’s proprietary “glass mesa” structure Contact shape
Development of Horizontal-Deflection Output Transistors
Device Trends
Features of Fourth and Fifth Generation
Emitter
Collector
BaseGlasspassivation
N+
P
N–
N+
B E
B E
5
s
s
d)
ype
ration
e
on
5 Comparison of Product Characteristic Curve, Features and Emitter-Contact Design
Generation
•Main application
• Features
Design
Emitter contact shape
Typical Products and Waveforms
TVs Video displays
First Generation•TVs • High-voltage 1500 V • Improved R-SOA • Improved switching speeds fH(max) = 32 kHz • Development of TO-3P(H)IS Package
Second Generation•TVs • High-current devices products
•Video displays • Improved switching speeds fH(max) = 64 kHz • Development of TO-3P(LH) Package
Third Generation•TVs • Improvements over first-generation products•Video displays • Improvements over second-generation products • Improved switching speeds fH(max) = 80 kHz
Fourth Generation•TVs • Improvements over first- and third-generation products•Digital TVs • Development of new 2000-V products•Video displays • Improvements over third-generation products • Improved switching speeds fH(max) = 130 kHz
Fifth Generation•Digital TVs • Enhanced 2000-V product line • Improved speeds for products incorporating damper diodes•Video displays • Improvements over fourth-generation products • Reduced loss • Improvement in drivability
Comb type I 2SD1556 (1500 V / 6A)
2SD2253 (1700 V / 6A)
2SD2553 (1700 V / 8A)
2SD2638 (1700 V / 7A)
2SC4290A (1500 V / 20A)
2SC5142 (1500 V / 20A)
2SC5445 (1500 V / 20A)
2SC5695 (1500 V / 22A)
STRIPE type
Comb type II
Mesh type I orCrystal-mesh type
Mesh type II
@fH, ICP, IB1(end), VCP
(t, IC, VCE) / div
@15.75kHz, 5A, 1A, 1200V
(200ns, 1A, 10v) / div
@100kHz, 8A, 1A, 1200V
(50ns, 1A, 10v) / div
B E
B E
B E
B E
B E
IC
tf LossOA, OV tstg Loss
VCE
IC
tf LossOA, OV tstg Loss
VCE
IC
tf LossOA, OV tstg Loss
VCE
IC
tf LossOA, OV tstg Loss
VCE
IC
tf LossOA, OV tstg Loss
VCE
IC
tf LossOA, OV tstg Loss
VCE
IC
tf Loss
OA, OV tstg Loss
VCE
IC
tf Loss
OA, OV tstg Loss
VCE
6
6 New Products
7 Product Line Matrix
For video displays1
For color TVs2
For digital TVs3
Product No.Maximum Ratings
(V) (A) (W)VCBO IC PC Target Use Remarks Note
2SC55702SC55872SC55882SC55892SC55902SC56952SC5717*(S3D20)*(S3D21)
170015001700150017001500150015001700
21-inch, 130 kHz19-inch, 110 kHz19-inch, 90 kHz19-inch, 120 kHz19-inch, 100 kHz21-inch, 130 kHz19-inch, 120 kHz19-inch, 92 kHz21-inch, 130 kHz
Device with highest IC (max) ratingsHigh-current version of 2SC54111700-V version of 2SC54112SC5587 and 2SC5589 use same chip. 2SC5588 and 2SC5590 use same chip. Equivalent to 2SC54452SC5717 and 2SC5695 use same chip.Equivalent to 2SC5411Equivalent to 2SC5570
281715181622211428
2207575
200200200
7555
210
Product No.Maximum Ratings
(V) (A) (W)VCBO IC PC Target Use Remarks Note
2SC55702SC55882SC55902SC56122SC5716
*(2SC5748)*(2SC5749)
*(S3D21)
17001700170020001700200020001700
32-inch, 32 kHz˜24-inch, 32 kHz28-inch, 32 kHz˜32-inch, 32 kHz32-inch, 32 kHz32-inch, 32 kHz32-inch, 32 kHz32-inch, 32 kHz˜
Package
2SD25992SD25862SD2499S2055N2SD25392SC5339
2SC52802SD2559
2SD2550
2SD2551
2SD26382SD25532SC5716
2SD2498S2000N
2SD25002SC53862SC54042SC53872SC5411*(S3D20)
2SC5587
2SC5717
2SC5421
2SC55892SC54452SC5695
2SC5422
2SC55902SC5446
2SC5570*(S3D21)
2SC5588 *(2SC5749) *(2SC5748)
2SC5612
TO-3P(H)IS40 W to 75 W
TO-3P(H)IS40 W to 75 W
TO-3P(LH)180 W to 220 W
TO-3P(LH)180 W to 220 W
TO-3P(LH)180 W to 220 W
3 A3.5 A
4 A4.5 A
5.5 A
7 A8 A
12 A14 A15 A17 A
PC
**IC (sat)
Device with highest IC (max) ratings1700-V version of 2SC54112SC5588 and 2SC5590 use same chip. VCBO = 2000 V series Built-in damper diode (High-current version of 2SC5143)VCBO = 2000 V series VCBO = 2000 V series (built-in damper diode) Equivalent to 2SC5570
28151622
8161628
2205050
22055
210210210
Product No.Maximum Ratings
(V) (A) (W)VCBO IC PC Target Use Remarks Note
2SD2638 1700 28-inch, 15.75 kHz Equivalent to 2SD25537 50
VCBO = 1500 V VCBO = 1700 V VCBO = 2000 V
5 A
6 A
11 A
22 A
Built-indamper diode
No built-indamper diode
No built-indamper diode
Built-indamper diode
No built-indamper diode
No built-indamper diode
Built-indamper diode
No built-indamper diode
Notes: **: IC(sat) is value of IC for VCE (sat).: 3rd generation (old design): 4th generation (new design): 5th generation (new design): 5th generation (new design under development)*( )
: Production schedules are provisional.
: Production schedules are provisional.
7
Note
Note
C5749) *(2SC5748)
2SC5612
TO-3P(LH)180 W to 220 W
C5143)
Note
VCBO = 2000 V
lt-inr diode
No built-indamper diode
chedules are provisional.
chedules are provisional.
*( )
82SC Series1
Min Max @5V/ICGene-ration@ IC @ IB
Maximum Ratings
2SC52802SC53392SC53862SC53872SC54042SC54112SC54212SC54222SC54452SC54462SC55702SC55872SC55882SC55892SC55902SC56122SC56952SC57162SC5717*(2SC5748)*(2SC5749)*(S3D20)*(S3D21)
1500
1500
1500
1500
1500
1500
1500
1700
1500
1700
1700
1500
1700
1500
1700
2000
1500
1700
1500
2000
2000
1500
1700
8
7
8
10
9
14
15
15
20
18
28
17
15
18
16
22
22
8
21
16
16
14
28
50
50
50
50
50
60
180
200
200
200
200
75
75
200
200
220
200
55
75
210
210
55
210
4.0
4.0
4.3
4.3
4.0
4.0
4.0
4.5
4.5
4.0
4.5
5.0
4.8
5.0
4.8
4.8
4.5
3.8
4.5
4.8
4.8
4.0
4.5
8.5
8.0
7.5
7.8
8.0
8.0
8.0
8.5
8.5
8.0
7.5
8.0
8.0
8.0
8.0
9.0
8.5
9.0
8.5
7.5
9.0
8.0
7.5
5
5
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
5
3
3
3
3
3
6
5
6
8
7
11
11
11
15
14
22
14
12
14
12
17
17
6
17
12
12
11
22
1.5
1.25
1.5
2
1.75
2.75
2.75
2.75
3.75
3.5
5.5
3.5
3
3.5
3
4.25
3.75
1.5
3.75
3
3
2.75
5.5
6.0
6.0
3.5
3.5
3.5
3.5
3.5
3.5
2.2
2.3
1.6
2.0
2.0
2.0
2.0
5.0
2.1
5.0
2.1
5.0
5.0
3.5
1.6
0.50
0.50
0.30
0.30
0.30
0.30
0.30
0.30
0.15
0.15
0.15
0.15
0.15
0.15
0.15
0.35
0.15
0.35
0.15
0.35
0.35
0.30
0.15
32
32
64
64
64
64
64
64
100
100
130
100
100
100
100
32
100
32
100
32
32
90
130
6.0
5.0
5.0
6.0
5.5
8.5
8.5
8.0
8.0
7.0
8.0
7.5
6.5
7.5
6.5
8.0
8.0
5.5
8.0
8.0
8.0
6.5
8.0
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
4th
5th4th
5th5th5th5th5th
6
5
6
8
7
11
11
11
15
14
22
14
12
14
12
17
17
6
17
12
12
11
22
Characteristics List
(V)VCBO
VCE(sat) MaxhFE Switching Time (Max)
(A)IC
(W)PC
(–) (A) (V) (A) (A)tstg tf(µs) (µs)
@ fH @ Icp(kHz) (A)(–)
2SD Series2
Min Max @5V/ICGene-ration@ IC @ IB
Maximum Ratings
2SD24982SD24992SD25002SD25392SD25502SD25512SD25532SD25592SD25862SD25992SD2638
1500
1500
1500
1500
1700
1700
1700
1500
1500
1500
1700
6
6
10
7
4
5
8
8
5
3.5
7
50
50
50
50
50
50
50
50
50
40
50
5
5
4
5
8
5
5
5
4.4
8
4.5
9
9
8
9
22
10
9
9
8.5
25
7.5
5
5
3
5
8
5
5
5
5
8
5
4
4
6
5
3
4
6
6
3.5
3
5.5
0.8
0.8
1.5
1
0.8
0.8
1.2
1.2
0.8
0.8
1.2
10
11
11
9
10
10
12
12
10
10
9
0.7
0.6
0.7
0.6
0.6
1.0
0.7
1.0
0.6
1.0
0.8
15.75
15.75
15.75
15.75
15.75
15.75
15.75
15.75
15.75
15.75
15.75
4
4
6
5
3
4
6
6
3.5
3
5.5
3rd
3rd
3rd
3rd
3rd
3rd
3rd
4th
4th
4th
4th
4
4
6
5
1
4
6
6
3.5
0.5
5.5
(V)VCBO
VCE(sat) MaxhFE
(A)IC
(W)PC
(–) (A) (V) (A) (A)tstg tf(µs) (µs)
@ fH @ Icp(kHz) (A)(–)
S2000 / S2055 Series3
Min Max @5V/ICGene-ration@ IC @ IB
Maximum Ratings
S2000NS2055N
1500
1500
8
8
50
50
4.5
4.5
9
9
5
5
4.5
4.5
1
1
12
11
0.7
0.6
15.75
15.75
4.5
4.5
3rd
3rd
4.5
4.5
(V)VCBO
VCE(sat) MaxhFE
(A)IC
(W)PC
(–) (A) (V) (A) (A)tstg tf(µs) (µs)
@ fH @ Icp(kHz) (A)(–)
Product No.Built-indamperdiode
Switching Time (Max)Built-indamperdiode
Switching Time (Max)Built-indamperdiode
Product No.
Product No.
: 3rd generation (old design): 4th generation (new design): 5th generation (new design): 5th generation (new design under development)
8
9
2SC Series
ExampleGenerations
1
2SD / S2000 / S2055 Series2
2SC5411: (H)
*(S3D20) : (H)
2SC5421: (LH)
2SC5588: (H)
2SC5590: (LH)
2SC5422: (LH)
*(2SC5748) : (LH)
*(2SC5749) : (LH)
2SC5612: (LH)
2SC5387: (H)
2SC5386: (H)
2SC5280: (H)
2SC5404: (H)
Application Map (Reference only)
: 3rd Gen. (old design)
: 4th Gen. (new design)
: 5th Gen. (new design)
: under development 2SCXXXX
*(2SCXXXX)2SCXXXX2SDXXXX
#
#
#
$
¥$
$
2SD2559: (H)
2SD2500: (H)
2SD2553: (H)
¥
¥#
2SD2551: (H)
2SD2498: (H)
2SD2499: (H)
¥#
¥
2SD2550: (H)
2SD2599: (H)
¥#
¥#
S2000N: (H)
S2055N: (H)¥
2SD2638: (H)¥#
2SD2539: (H)¥
2SD2586: (H)¥
2SC5717: (H)
2SC5445: (LH)
2SC5695: (LH)
¥
*(S3D21): (LH)
2SC5570: (LH)
#
#
2SC5587: (H)
2SC5589: (LH)
2SC5446: (LH)#
Rec
omm
ende
d P
eak
Col
lect
or C
urre
nt fo
r A
ctua
l Use
Icp
(A)
Horizontal Frequency fH (kHz)
Horizontal Frequency fH (kHz)
Rec
omm
ende
d P
eak
Col
lect
or C
urre
nt fo
r A
ctua
l Use
Icp
(A)
2SC5339: (H)
2SC5716: (H)
¥
¥#
0
8
7
6
5
4
3
2
1
020 40 60 80 100 120 140
0
24
22
20
18
16
14
12
10
8
6
4
2
020 40 60 80 100 120 140
Note
¥ : Built-in damper fH (max) = 32kHz @without additional Damper diode
# : VCBO = 1700V$ : VCBO = 2000V (Another 1500V)
(H) : TO-3P(H)IS (Full mold type)(LH) : TO-3P(LH)
VCBO
DAMPER
PACKAGE
Note
¥ : Built-in damper fH (max) = 32kHz @without additional Damper diode
# : VCBO = 1700V$ : VCBO = 2000V (Another 1500V)
(H) : TO-3P(H)IS (Full mold type)(LH) : TO-3P(LH)
VCBO
DAMPER
PACKAGE
9
only)
design)
ment
Hzonal
V)
pe)
Hzonal
V)
pe)
10 Basic Circuit Structure and Operating Waveform of Horizontal-Deflection Output
Measurement conditions
Basic circuit structure
Measurement range
Enlarged wave forms of IB and IC
VBE (Base-emitter voltage)
IB (Base current)
IC (Collector current)
– IE (Reverse emitter current)
IF (Forward current)
VCE (Collector-emitter voltage)
ILY (Deflection coil current)
ICY (Resonance capacitor current)
fH = 69 kHz (duty 50%)ICP = 5 AVCP = 1200 V
t (time)X-axis
Y-axis
2µs / div
5V / div
2A / div
2A / div
2A / div
2A / div
200V / div
2A / div
2A / div
Main operations
HV-Tr operation HV-Tr operation
Cy operation
Cy operation
Damper diodeoperation
Damper diodeoperation
Operating waveform example
VCP
ICP
IB1(end)
ts
ILy
ICy
tr
tf
OV
OA
OA
OA
OA
OA
OA
OV
IF (Damper diode)
– IE
IC
IB
IB2
VBE
ts t r
VCE(HV-Tr)–VF(Damper-diode)
tstg
0.9 x ICP
0.1 x ICP
2µs / div
dIB/dt =IB1(end) + IB2
tstg
tr = π Ly Cy
SBD
LyCy
ILy
VCCHV-Tr
Drive Circuit
Damper diode
IF
IEVBE
VCE(HV-Tr)–VF(Damper diode)
IB
IC ICy
IB2
0.9 x ICP
0.1 x ICP
ICP
IC
IB
IB1(end)
tstg
tf
OA
OA
10
11 Switching Data of 2SC5695 (Reference only)
Test condition1
Test sample2
tstg, tf, –dIB / dt, SW loss –– IB1 (end)3
@ TC = 25˚C fH = 105 kHz (duty 50%, continuous opration) ICP = 6.5 A VCP = 953V (Vcc2 = 107 V) ICP = 8.5 A VCP = 1220V (Vcc2 = 140 V)
Mark TestSample
hFE (1)
ICP = 6.5 A ICP = 8.5 AStanderd spec.
tail sideTyp
storage side
50.533.824.1
15.612.18.2
8.26.64.6
0.4V0.6V2.9V
20 (min) 50 (max) 8 (min) 17 (max) 4.8 (min) 8.3 (max) 3V (max)@5V / 2A @5V / 10A @5V / 17A @17A / 4.25A
hFE (2) hFE (3) VCE (sat)
–dIB / dt = 4.0A/µs (VCC1 = 24V)Ly = 63 µH, Cy = 4000 pF
· · ·
·· ·· ·
· ·· ·
0.4
0.8
1.2
1.6
2
2.4
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
40
80
120
160
200
240
280
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
3.0
3.4
3.8
4.2
4.6
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
4
6
8
10
12
14
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
tstg
(µs
)tf
(ns)
SW
loss
(W
)
IB1 (end) (A)
–dI B
/ d
t (A
/µs)
ICP = 6.5 A
tf (max) = 140 ns
ICP = 8.5 A
ICP = 6.5 A
ICP = 8.5 A
ICP = 6.5 A
ICP = 8.5 A
ICP = 6.5 A
ICP = 6.5 ABest condition area
ICP = 8.5 ABest condition area
SW loss (max) = 11 W
· ·
· ·
· ·
tstg (max) = 1.9 µs ICP = 8.5 A
11
only)
VVV
max)25Asat)
11 Switching Data of 2SC5695
12
Recomended values (rough calculation)4
tstg (max) = (1/fH) x 0.2
Operating waveform example (21-inch ultra-high-resolution monitor) fH = 32 kHz to 100 kHz monitor
Application Circuit Example of 2SC5695
Y-axis
tf (max) = (1/fH) x 0.01 + 50ns
thermal resistance
TOTAL ( junction on ari): Rth ( f-a) = 5.125˚C/W
junction to case: Rth ( j-c) = 0.625˚C/W (2SC5695) case to fin (heat-sink): Rth (c-f) = 1˚C/W (supposition)+) fin (heat-sink) to air: Rth ( f-a) = 3.5˚C/W (supposition)
SW Loss Capasitance (max) = ∆Tj (max)/Rth (j-a) x 80% derating = 70/5.125 x 0.8 = 10.9
tstg (max) = 1.9µs· ·
tf (max)
Switching loss capacitance (max),@Ta (max) = 40˚C, Tj (max) = 110˚C Recommended
∆Tj (max) = 110˚C – 40˚C ∆Tj (max) = 70˚C Recommended
tstg (max)
tf (max) = 140 ns· ·
SW loss Capasitance (max) = 11 W
100 ns / div500 ns / div
IB : 1 A / div VCE : 200 V / divIC : 1 A / div
IB : 1 A / div VCE : 10 V / divIC : 1 A / div
X-axis
@ fH = 32 kHz Icp = 9 A IB1 (end) = 0.75 A dIB / dt = 3.5 A / µs
· ·
· ·
@ fH = 100 kHz Icp = 8 A IB1 (end) = 1. 1 A dIB / dt = 3.8 A / µs
· ·
· ·
· ·
10 v
0 v
duty 50 %MOSFET
C1
C2R1 R2 R4
R3
SBD
Cy Ly L
IB
IC
HV-Tr
DamperdiodeVCE
Vcc 1 Vcc2Semiconductors devices MOSFET : 2SK2146 SBD : 3GWJ42C HV-Tr : 2SC5695 Damper diode : 5TUZ52
Others Vcc1 15 V Vcc2 47 V (@ 32 kHz) 156 V (@ 100 kHz) Cy = 4500 pF Ly = 80 µH
R1 = 200 ΩR2 = 3 ΩR3 = 1.85 ΩR4 = 15 ΩC1 = 200 pFC2 = 3.3 µF L = 10 mH
100 ns / div
IB: 0
IBIC: 0
VCE: 0
IC
VCE
100 ns / div
IB: 0
IB
IC: 0VCE: 0
IC
VCE
500 ns / div
IB: 0
IB
IC: 0VCE: 0
IC
VCE
500 ns / div
IB: 0
IBIC: 0
VCE: 0
IC
VCE
12
TO-3P(H)IS (Unit : mm)
13
2-16E311A 2-16E313A
2-16E307A 2-16E309A
2-16E305A 2-16E306A
2-16E302A 2-16E303A
Lead-Forming
5.45
1
2
3
5.45 4.0 4.0
1. Base2. Collector3. Emitter
8.0
15.2
±0.8
10.2
±0.6
(2.2
5)(2
.75)
5.45
1
2
3
5.45
1. Base2. Collector3. Emitter
4.95 ± 0.5 4.45 ± 0.5
9.4 ± 0.5
7.0
± 0.
5
1.8
(8.5
)
(8)
5.45
1
2
3
5.45
1. Base2. Collector3. Emitter
13.0
± 0
.5
5.3 ± 0.5
1.25
5.45
1
2
3
5.45
1. Base2. Collector3. Emitter
7.0
± 0.
56.
5 ±
0.5
5.6 ± 0.5 6.9 ± 0.5
2.5
5.45
1 2 3
5.45
1. Base2. Collector3. Emitter
15.4
± 0
.5
5.45
1
2
3
5.45
1. Base2. Collector3. Emitter
15 ±
1
6.5
± 0.
5
5.3 ± 0.5
1.25
5.45
1
2
3
5.45
1. Base2. Collector3. Emitter
15.4
± 0
.5
6.5
± 0.
56.
55 m
in
5.3 ± 0.5
1.25
5.45
1
2
3
5.45
1. Base2. Collector3. Emitter
4.95 ± 0.5 4.45 ± 0.5
9.4 ± 0.5
3.3
± 0.
5
2.2
(11)
(10.
5)
13
nit : mm) TO-3P(H)IS (Unit : mm)
TO-3P(LH) (Unit : mm)
2-21F208A 2-21F218A
2-16E316A
2-16E314A 2-16E315A
13
5.45
1
2
3
5.45
1. Base2. Collector3. Emitter
4.95 ± 0.5 4.45 ± 0.5
9.4 ± 0.57.
0 ±
0.5
35.4
± 1
.0
2.0
5.45
1
2
3
5.45
1. Base2. Collector3. Emitter
4 ± 0.5 4 ± 0.5
8.0 ± 0.5
2.75
+ 1
.010
.2 –
0.5
2.25
5.45
1 2 3
5.45
1. Base2. Collector3. Emitter
10.3
5 ±
0.5
1.0.5 ± 0.5 2.95 ± 0.5
0.82 ± 0.5
4.0 ± 0.5
5.85
± 0
.5
5.45 ± 0.15 5.45 ± 0.15 5.45 ± 0.6
20.0
± 0
.6
17.0
± 0
.86.
5 ±
0.6
1
2
3
1. Base2. Collector (heat sink)3. Emittor
3.0
5.45 ± 0.15 5.45 ± 0.15
8.0 ± 1.0
18.5
± 0
.8
7.0
± 0.
8
3.5
± 0.
5
4.0 ± 0.54.0 ± 0.5
1
2
3
1. Base2. Collector (heat sink)3. Emitter
14
14 Markings
15
Explanation of markings Toshiba horizontal-deflection output transistors are manufactured in Japan (at the Himeji Semiconductor Works) and in Malaysia (at Toshiba Electronics Malaysia Sdn. Bhd.). Toshiba Electronics Malaysia Sdn. Bhd. only manufactures TO-3P(H)IS products.
Place of ManufactureTOSHIBA ELECTRONICSMALAYSIA SDN. BHD(made in Malaysia)
Himeji Semiconductor Works(made in Japan)
Package type TO-3P(H)IS TO-3P(LH)
Marking Example
Definition
*1: Manufacturer’s marking: “T”, “ ”, “TOSHIBA”
*2: Product number or abbreviated product number
*3: Code: “1”, “2”, “3”, “A”, “B”, “C”
*4: Lot number: month and year of manufacture Month of manufacture: January to December are denoted by the letters A to L respectively. Year of manufacture: last decimal digit of year of manufacture “1A”, as shown on the above package, indicates manufacture in January 2001.
*5: Country of origin Since TO-3P(LH) packages are only made in Japan, “JAPAN” is displayed.
Package Label
Sample label
(As of April 2001)
(As of April 2001)
TOSHIBA
C54112 1A
*4
*1
*3
*2
TOSHIBA
JAPAN
2SC5570
1A2
*5
*3
*4
*1
*2
P/N:TYPE
ADDC Q,TY PCS.
NOTE
MADE IN JAPAN
BARCORD
15
Works) d. only
vely.
2001)
2001)
Package type TO-3P(H)IS TO-3P(LH)
16 Package Specifications
Packing Type 100 per tray, 5 trays per carton
Tray Dimensions(unit: mm)
Carton Dimensions(unit: mm)
Tolerance: ±0.7Material: rigid vinyl chloride
Tolerance: ±0.7Material: rigid vinyl chloride
(As of April 2001)
19
290
6116
8
67.6
76
184
286
14
290
2412.4
52 72.5
184
1927 21
Label
190
85 305
Label
190
116 303
16
172SC Series1
ProductNo.
Super-sededProducts
Discon-tinuedProducts
FinalPhaseProducts
Built-indamperdiode
@ IC(A)
@ IB(A)
Maximum Ratings RecommendedReplacementand Remarks
Package TypeVCE(sat) (V)
2SC37152SC37162SC3884A2SC3885A2SC3886A2SC38872SC3887A2SC38882SC3888A2SC38892SC3889A2SC38922SC3892A2SC38932SC3893A2SC42882SC4288A2SC42892SC4289A2SC42902SC4290A2SC45312SC45322SC45422SC45602SC46082SC47572SC47582SC47592SC47602SC47612SC47622SC47632SC47642SC47652SC47662SC48062SC48302SC49162SC50482SC51292SC51422SC51432SC51442SC51482SC51492SC51502SC53312SC5332
2SD2599;2SD2599;2SC5386;2SC5386;2SC5386;2SC5386;2SC5386;2SC5386;2SC5386;2SC5386;2SC5386;2SC5339;2SC5339;2SC5280;2SC5280;2SC5421;2SC5421;2SC5589;2SC5589;2SC5589;2SC5589;2SC5280;2SC5422;2SC5404;2SC5404;2SC5422;2SC5386;2SC5386;2SC5404;2SC5612;2SC5588;2SC5280;2SC5280;2SC5339;2SC5716;2SC5716;2SC5588;2SC5386;2SC5280;2SC5387;2SC5386;2SC5589;2SC5716;2SC5590;2SC5386;2SC5339;2SC5588;2SC5421;2SC5422;
VCBO(V)
MaxIC(A)
PC(W)
(H)IS (BS) (LH) TO-3
1500150015001500150014001500140015001400150014001500140015001400150014001500140015001500170015001500170015001500150020001700150015001500170017001700150015001500150015001700170015001500170015001700
456786677887788
12121616202010101010878
108678656567
1210201020128
101514
2.534564455665566
101012121414787765676
4.5564
3.54.53.5
4586
146
1185698
0.60.8
11.21.5
11
1.21.21.51.51.21.21.51.52.52.5
33
3.53.51.7
21.71.71.51.21.51.71.51.3
11.20.8
11.3
1112
1.53.51.5
2.752
1.31.5
2.252
5555555555555555555555555555555555555553333335333
505050505080808080808050505050
20020020020020020050
2005080
200505050
2005050505050505050505050
20050
200505050
180200
2122222225511115522223215221122132222211113121222
5555
List of Superseded, Final-Phase and Discontinued Products
Notes: : 1st generation : 2nd generation (final-phase or discontinued products) : 3rd generation (old design superseded products) : 4th generation (new design)
(As of April 2001)
*
Electrical characteristics and packages are same.Electrical characteristics have are high grade.Electrical characteristics are low grade.Package (allowable power disspation) are high grade.Package (allowable power disspation) are low grade.Damper diode is built-in or not.
123456
( * )
17
ndedent
arks
9;9;6;6;6;6;6;6;6;6;6;9;9;0;0;1;1;9;9;9;9;0;2;4;4;2;6;6;4;2;8;0;0;9;6;6;8;6;0;7;6;9;6;0;6;9;8;1;2;
2122222225511115522223215221122132222211113121222
5555
s)
2001)
2SD Series2
S2000 / S2055 Series3
ProductNo. @ IC
(A)@ IB(A)
Maximum Ratings RecommendedReplacementand Remarks
VCBO(V) MaxIC
(A)PC(W)
(H)IS (BS) (LH) TO-3
9001500150015001500150015001400150015001400150015001500150015001500150015001500150015001500150015001500150015001500150015001500150017001500150017001700
62.53.5
567
2.53.5
56
102.53.5
56
2.53.5
567
2.53.5
5678
2.53.5
56
3.55668
1087
2.523456234582345234562345682345
2.23.5
556766
0.250.60.80.8
11.20.60.80.8
12
0.60.80.8
10.60.80.8
11.20.60.80.8
11.2
20.60.80.8
10.70.8
11
1.21.41.21.2
108855588555885588555885555885515555555
505050505050505050505080808080808080808040405050505040405050405050505050
20050
56622225111251555555221111211111113351
5
5
2SD8112SD8182SD8192SD8202SD8212SD8222SD8682SD8692SD8702SD8712SD12792SD14252SD14262SD14272SD14282SD14292SD14302SD14312SD14322SD14332SD15432SD15442SD15452SD15462SD15472SD15482SD15532SD15542SD15552SD15562SD20892SD20952SD21252SD22532SD23482SD23492SD24282SD2454
2SC3657;2SD2599;2SD2599;2SC5386;2SC5386;2SC5386;2SD2599;2SD2599;2SD2499;2SD2539;2SC5404;2SD2599;2SD2599;2SD2499;2SD2539;2SD2498;2SD2498;2SD2498;2SC5386;2SC5404;2SD2498;2SD2498;2SD2498;2SC5386;2SC5404;2SC5404;2SD2599;2SD2599;2SD2499;2SD2539;2SD2599;2SD2586;2SD2539;2SD2638;2SC5280;2SC5280;2SD2553;2SD2638;
ProductNo. @ IC
(A)@ IB(A)
Maximum Ratings RecommendedReplacementand Remarks
VCBO(V) MaxIC
(A)PC(W)
(H)IS (BS) (LH) TO-3
15001500150015001500140015001500
55555555
4.54.54.54.54.54.54.54.5
22222222
51155115
8080505080805050
25122512
5
5S2000S2000AS2000AFS2000FS2055S2055AS2055AFS2055F
S2000N;S2000N;S2000N;S2000N;S2055N;S2055N;S2055N;S2055N;
Package TypeVCE(sat) (V)
Package TypeVCE(sat) (V)
Super-sededProducts
Discon-tinuedProducts
FinalPhaseProducts
Built-indamperdiode
Super-sededProducts
Discon-tinuedProducts
FinalPhaseProducts
Built-indamperdiode
17
Electrical characteristics and packages are same.Electrical characteristics have are high grade.Electrical characteristics are low grade.Package (allowable power disspation) are high grade.Package (allowable power disspation) are low grade.Damper diode is built-in or not.
123456
( * ) Notes: : 1st generation : 2nd generation (final-phase or discontinued products) : 3rd generation (old design) : 4th generation (new design)
*
*
18 19
18 18
**IC(sat)
PC max
VCBO = $900V, *1400V,1500 V VCBO = 1700 V VCBO = 2000 VPackage
2SD15532SD20892SC37152SC37162SD15542SD25992SD20952SD25862SC47642SD15552SD2499
S2055AFS2055FS2055N2SC47622SC49162SC51492SC53392SD15562SD21252SD2539
2SC47632SC52802SD23482SD2559
2SC45312SC2349
TO-3P(H)IS TO-3 TO-3P(BS) TO-3P(H)IS TO-3P(LH) TO-3P(LH)
Table of Replacement
(8V)
(8V)
(5V)
(5V)
(5V)
(5V)
(1V)
(5V)
(5V)
(5V)
(5V)
(3V)
(5V)
(5V)
(5V)
(3V)
(3V)
(5V)
(3V)
(5V)
(5V)
(3V)
(5V)
(3V)
(3V)
(3V)
(3V)
(3V)
2SD1543
2SD1544
2SC3844A2SC48302SD15452SD2498S2000AFS2000FS2000N2SC3885A2SC47572SC51482SD1546
2SC3886A2SC47582SC51292SC53862SD15472SD25002SC45422SC47592SC54042SD15482SC50482SC5387
2SC5411*(S3D20)
2SC5587
2SC5717
(8V)
(8V)
(5V)
(5V)
2SD868
2SD869
2SD870
2SD871
(8V)
(10V)
(8V)
(5V)
(5V)
(5V)
(5V)
2SD818
$2SD8112SD819
2SD820
2SD821
2SD822
*2SD1279
(8V)
(8V)
(5V)
(5V)
(1V)
(5V)
(5V)
(5V)
(5V)
(5V)
2SD1425
2SD1426
2SD1427
S2055S2055A
*2SC38922SC3892A2SD1429
*2SC38932SC3893A
(8V)
(8V)
(5V)
(5V)
(5V)
(5V)
(1V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
2SD1429
2SD1430
*2SC38872SC3887A2SD1431
S2000S2000A
*2SC38882SC3888A2SD1432
*2SC38892SC3889A2SD1433
2SC4560
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
(3V)
(5V)
(5V)
(5V)
(5V)
2SD2550
2SC4765
2SD2551
2SC4766
2SD2253
2SD26382SC51432SC57162SD24282SD24542SD2553
(5V)
(5V)
(3V)
(5V)
(3V)
2SC4806
2SC4761
2SC5150
2SC4532
2SC5588
(5V)
(3V)
(3V)
(3V)
(3V)
(3V)
2SC4608
2SC5332
2SC5422
2SC5590
2SC5446
2SC5570*(S3D21)
(5V)2SC4760
*(2SC5748)
(5V)
(5V)
(3V)
(5V)
(5V)
(5V)
(5V)
(3V)
(3V)
(3V)
(3V)
2SC5331*2SC42882SC4288A2SC5421
*2SC42892SC4289A*2SC42902SC4290A2SC51422SC55892SC54452SC5695
*(2SC5749)
(8V)
(1V)
(5V)
(5V)
(8V)
(8V)
(5V)
(5V)
(5V)
(5V)
(5V)
(1V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
(5V)
2 A2.2 A2.5 A
3 A
3.5 A
4 A
4.5 A
5 A
5.5 A6 A
7 A
8 A
9 A10 A
11 A
12 A
14 A
15 A17 A
22 A
**IC(sat)
PC max
Package
2 A2.2 A2.5 A3 A
3.5 A
4 A
4.5 A
5 A
5.5 A6 A
7 A
8 A
9 A10 A
11 A
12 A
14 A
15 A17 A
22 A
50 W 80 W
TO-3P(LH)
Built-indamper diode
Built-indamper diode
Built-indamper diode
Built-indampe dioder
Built-indamper diode
No built-indamper diode
No built-indamper diode
No built-indamper diode
No built-indamper diode
No built-indamper diode
No built-indamper diode
No built-indamper diode
40 W to 75 W 40 W to 75 W180 W to 220 W 180 W to 220 W 180 W to 220 W
Notes: **: IC (sat) is value of IC for VCE (sat).: Superseded, final-phase or discontinued products: 3rd generation (old design): 4th generation (new design)
: 5th generation (new design) : 5th generation (new design under development)*( )
(5V) means VCE (sat) = 5 V
2SC5612 (3V)
©2001 TOSHIBA CORPORATIONPrinted in Japan
OVERSEAS SUBSIDIARIES AND AFFILIATESToshiba AmericaElectronic Components, Inc.Headquarters-Irvine, CA9775 Toledo Way, Irvine, CA 92618, U.S.A.Tel: (949)455-2000 Fax: (949)859-3963
Boulder, CO3100 Arapahoe Avenue, Ste. 500,Boulder, CO 80303, U.S.A.Tel: (303)442-3801 Fax: (303)442-7216
Boynton Beach, FL(Orlando)11924 W. Forest Hill Blvd., Ste. 22-337,Boynton Beach, FL 33414, U.S.A.Tel: (561)374-6193 Fax: (561)374-6194
Deerfield, IL(Chicago)One Pkwy., North, Suite 500, Deerfield,IL 60015-2547, U.S.A.Tel: (847)945-1500 Fax: (847)945-1044
Duluth, GA(Atlanta)3700 Crestwood Parkway, Ste. 460,Duluth, GA 30096, U.S.A.Tel: (770)931-3363 Fax: (770)931-7602
Edison, NJ2035 Lincoln Hwy. Ste. #3000, EdisonNJ 08817, U.S.A.Tel: (732)248-8070 Fax: (732)248-8030
Orange County, CA2 Venture Plaza, #500 Irvine, CA 92618, U.S.A.Tel: (949)453-0224 Fax: (949)453-0125
Portland, OR1700 NW 167th Place, #240,Beaverton, OR 97006, U.S.A.Tel: (503)629-0818 Fax: (503)629-0827
Raleigh, NC5511 Capitol Center Dr., #114,Raleigh, NC 27606, U.S.A.Tel: (919)859-2800 Fax: (919)859-2898
Richardson, TX(Dallas)777 East Campbell Rd., Suite 650, Richardson,TX 75081, U.S.A.Tel: (972)480-0470 Fax: (972)235-4114
San Jose Engineering Center, CA1060 Rincon Circle, San Jose, CA 95131, U.S.A.Tel: (408)526-2400 Fax:(408)526-2410
Wakefield, MA(Boston)401 Edgewater Place, Suite #360, Wakefield,MA 01880-6229, U.S.A.Tel: (781)224-0074 Fax: (781)224-1095
Toshiba Do Brasil S.A.Electronic Components Div.Estrada Dos Alvarengas, 5. 500-Bairro Alvarenga09850-550-Sao Bernardo do campo - SPTel: (011)7689-7171 Fax: (011)7689-7189
Toshiba Electronics Europe GmbHDüsseldorf Head OfficeHansaallee 181, D-40549 DüsseldorfGermanyTel: (0211)5296-0 Fax: (0211)5296-400
München OfficeBüro München Hofmannstrasse 52,D-81378, München, GermanyTel: (089)748595-0 Fax: (089)748595-42
Toshiba Electronics France SARLImmeuble Robert Schumann 3 Rue de Rome,F-93561, Rosny-Sous-Bois, Cedex, FranceTel: (1)48-12-48-12 Fax: (1)48-94-51-15
Toshiba Electronics Italiana S.R.L.Centro Direzionale ColleoniPalazzo Perseo Ingr. 2-Piano 6,Via Paracelso n.12,1-20041 Agrate Brianza Milan, ItalyTel: (039)68701 Fax:(039)6870205
Toshiba Electronics España, S.A.Parque Empresarial San Fernando Edificio Europa,1a Planta, ES-28831 Madrid, SpainTel: (91)660-6700 Fax:(91)660-6799
Toshiba Electronics(UK) LimitedRiverside Way, Camberley Surrey,GU15 3YA, U.K.Tel: (01276)69-4600 Fax: (01276)69-4800
Toshiba Electronics Scandinavia ABGustavslundsvägen 12, 2nd FloorS-161 15 Bromma, SwedenTel: (08)704-0900 Fax: (08)80-8459
Toshiba Electronics Asia(Singapore) Pte. Ltd.Singapore Head Office438B Alexandra Road, #06-08/12 AlexandraTechnopark, Singapore 119968Tel: (278)5252 Fax: (271)5155
Bangkok Office135 Moo 5 Bangkadi Industrial Park, Tivanon Rd.,Bangkadi Amphur Muang Pathumthani, Bangkok, 12000,ThailandTel: (02)501-1635 Fax: (02)501-1638
Toshiba Electronics Trading(Malaysia)Sdn. Bhd.Kuala Lumpur Head OfficeSuite W1203, Wisma Consplant, No.2,Jalan SS 16/4, Subang Jaya, 47500 Petaling Jaya,Selangor Darul Ehsan, MalaysiaTel: (3)731-6311 Fax: (3)731-6307
Penang OfficeSuite 13-1, 13th Floor, Menard Penang Garden,42-A, Jalan Sultan Ahmad Shah,100 50 Penang, MalaysiaTel: 4-226-8523 Fax: 4-226-8515
Toshiba Electronics Philippines, Inc.26th Floor, Citibank Tower, Valero Street, Makati,Manila, PhilippinesTel: (02)750-5510 Fax: (02)750-5511
Toshiba Electronics Asia, Ltd.Hong Kong Head OfficeLevel 11, Top Glory Insurance Building, Grand CenturyPlace, No.193, Prince Edward Road West,Mong Kok, Kowloon, Hong KongTel: 2375-6111 Fax: 2375-0969
Beijing OfficeRm 714, Beijing Fortune Building,No.5 Dong San Huan Bei-Lu, Chao Yang District,Beijing, 100004, ChinaTel: (010)6590-8795 Fax: (010)6590-8791
Chengdu OfficeUnit F, 18th Floor, New Times Plaza, 42 Wenwu Road, Xinhua Avenue, Chengdu, 610017, ChinaTel: (028)675-1773 Fax: (028)675-1065
Shenzhen OfficeRm 3010-3012, Office Tower Shun Hing Square,Di Wang Commercial Centre, 333 ShenNanEast Road, Shenzhen, 518008, ChinaTel: (0755)246-1582 Fax: (0755)246-1581
Toshiba Electronics Korea CorporationSeoul Head Office14/F, KEC B/D, 257-7 Yangjae-Dong,Seocho-ku, Seoul, KoreaTel: (02)589-4334 Fax: (02)589-4302
Gumi Office6/F, Ssangyong Investment Securities B/D,56 Songjung-Dong, Gumi CityKyeongbuk, KoreaTel: (82)54-456-7613 Fax: (82)54-456-7617
Toshiba Technology Development(Shanghai) Co., Ltd.23F, Shanghai Senmao International Building, 101Yin Cheng East Road, Pudong New Area, Shanghai,200120, ChinaTel: (021)6841-0666 Fax: (021)6841-5002
Tsurong Xiamen Xiangyu TradingCo., Ltd.8N, Xiamen SEZ Bonded Goods Market Building,Xiamen, Fujian, 361006, ChinaTel: (0592)562-3798 Fax: (0592)562-3799
Toshiba Electronics TaiwanCorporationTaipei Head Office17F, Union Enterprise Plaza Bldg. 109Min Sheng East Rd., Section 3, 0446 Taipei,TaiwanTel: (02)514-9988 Fax: (02)514-7892
Kaohsiung Office16F-A, Chung-Cheng Bldg., Chung-Cheng 3Rd.,80027, Kaohsiung, TaiwanTel: (07)222-0826 Fax: (07)223-0046
The information contained herein is subject to change without notice.
The information contained herein is presented only as a guide for the applications of our products.No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may resultfrom its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices ingeneral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is theresponsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design forthe entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss ofhuman life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are usedwithin specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mindthe precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA SemiconductorReliability Handbook" etc..
The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personalequipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/orreliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usageinclude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments,combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listedin this document shall be made at the customer’s own risk.
Website: http://doc.semicon.toshiba.co.jp/indexus.htm
Electronic Devices Sales & Marketing Division1-1, Shibaura 1-chome, Minato-ku, Tokyo, 105-8001, JapanTel: +81-3-3457-3405 Fax: +81-3-5444-9431
010124 (D)