high output current, rail-to-rail input/output single cmos ... · high output current, rail-to-rail...
TRANSCRIPT
NJU77903
- 1 - Ver.02
High Output Current, Rail-to-Rail Input/Output Single CMOS Operational Amplifiers
■ GENERAL DESCRIPTION
The NJU77903 is CMOS operational amplifier combines full swing input and output with operating up to 36V.
It outputs typically up to 200mA of peak-to-peak current to drive low resistance load including inductance load such as Angle resolver, Lineout cable and Piezo actuator.
In addition, it has enhanced RF noise immunity. ■ FEATURES
● High output current ±100mA typ. (200mApp typ.) ● Wide Operating Temperature Topr = -40ºC to +125ºC ● Rail-to-Rail Input / Output ● Enhanced RF noise immunity ● Wide Operating Voltage 6.8V to 36V ● Supply Current 9.5mA typ. ● Open Loop Gain 100dB typ. ● Input Bias Current 1pA typ. ● Slew Rate 3.5V/µs typ. ● Unity Gain Frequency 1.5MHz typ. ● Thermal shutdown ● Current Limit ● Package Outline TO252-5 DFN8−W2 (ESON8-W2/Size: 3mm x 3mm)
■ APPLICATIONS ● Angle Resolver ● Motor Driver ● Speaker Driver ● 4mA to 20mA Transmitter ● Liner Power Booster
■ PIN CONFIGURATION
NJU77903DL3 (TO252-5) NJU77903KW2 (DFN8−W2(ESON8-W2))
1 2 3 4 5
PAD
[ TOP VIEW ]
1
2
3
4
8
7
6
5
[ TOP VIEW ]
PAD
1
2
3
4
8
7
6
5
[ BOTTOM VIEW ]
NJU77903DL3 (TO252-5)
NJU77903KW2 (DFN8−W2(ESON8-W2))
■ PACKAGE OUTLINE
NJU77903DL3 PIN CONFIGURATION
1 V+
2 OUTPUT
3 V-
4 -INPUT
5 +INPUT
Exposed pad should connect with a V- terminal.
NJU77903KW2 PIN CONFIGURATION
1 NC
2 OUTPUT
3 V-
4 -INPUT
5 +INPUT
6 LIM2 (Output Sink Current Limit Trim Terminal)
7 LIM1 (Output Source Current Limit Trim Terminal)
8 V+
Exposed pad should connect with a V- terminal. The NC pin and The PAD have to be wired as short as possible to connect with a V− terminal.
NJU77903
- 2 - Ver.02
■ ABSOLUTE MAXIMUM RATINGS (Ta=25ºC, unless otherwise noted.) PARAMETER SYMBOL RATING UNIT
Supply Voltage V+ - V- 40 V Differential Input Voltage (Note 1) VID ±36 V
Input Voltage (Note 2) VIN V- - 0.3 to V+ + 0.3 V Input Current IIN ±10(Note 3) mA
Output Voltage (Note 4) VO V- - 0.3 to V+ + 0.3 V Power Dissipation (Note 9)
PD (2-layer / 4-layer)
mW TO252-5 1190(Note 5) / 3125(Note 6) DFN8−W2 (ESON8-W2) 640(Note 7) / 2080(Note 8)
Operating Temperature Range Topr -40 to +125 °C Storage Temperature Range Tstg -55 to +150 °C
(Note1) Differential voltage is the voltage difference between +INPUT and -INPUT. (Note2) Input voltage is the voltage should be allowed to apply to the input terminal independent of the magnitude of V+. The normal
operation will establish when any input is within the Common Mode Input Voltage Range of electrical characteristics. (Note3) If the input voltage exceeds the supply voltage,the input current must be limited 10 mA or less by using a restriction resistance. (Note4) Output voltage is the voltage should be allowed to apply to the output terminal independent of the magnitude of V+. (Note5) 2-layer: EIA/JEDEC STANDARD Test board (76.2x114.3x1.6mm, 2layers, FR-4) mounting (Note6) 4-layer: EIA/JEDEC STANDARD Test board (76.2x114.3x1.6mm, 4layers, FR-4) mounting (Note7) Mounted on glass epoxy board. (101.5×114.5×1.6mm: based on EIA/JEDEC standard, 2Layers FR-4, with Exposed Pad)
(Note8) Mounted on glass epoxy board. (101.5×114.5×1.6mm: based on EIA/JEDEC standard, 4Layers FR-4, with Exposed Pad)
(For 4Layers: Applying 99.5×99.5mm inner Cu area and a thermal via hole to a board based on JEDEC standard JESD51-5) (Note9) Power dissipation is the power that can be consumed by the IC at Ta=25ºC, and is the typical measured value based on
JEDEC condition. When using the IC over Ta=25ºC subtract the value [mW/ºC] = PD / (Tstg (MAX)-25) per temperature. (Note10) The NC pin and The PAD have to be wired as short as possible to connect with a V− terminal.
■ RECOMMENDED OPERATING VOLTAGE
PARAMETER SYMBOL RATING UNIT
Supply Voltage V+-V- +6.8 to +36 V
Figure 1 : Power Dissipation Derating Curve
0
500
1000
1500
2000
2500
3000
3500
0 25 50 75 100 125 150Ambient Temperature Ta [ºC]
Pow
er D
issi
patio
n Pd
[mW
]
TO252-5 (4-layer)
DFN8-W2 (4-layer)
TO252-5 (2-layer)
DFN8-W2 (2-layer)
NJU77903
- 3 - Ver.02
■ ELECTRICAL CHARACTERISTICS (V+= +12V, V-= 0V, VIC= +6V, RL=10kΩ, Ta=25ºC, unless otherwise noted.)
PARAMETER PARAMETER TEST CONDITION Min. Typ. Max. UNIT
INPUT CHARACTERISTICS Input Offset Voltage VIO RS=50Ω - 1 6 mV Input Offset Voltage Drift ΔVio/ΔT Ta = -40ºC to 125ºC - 20 - µV/ºC Input Bias Current IB - 1 - pA Input Offset Current IIO - 1 - pA Open Loop Gain AV VO=1V to 11V, RL=10kΩ to V+/2 80 100 - dB
Common Mode Rejection Ratio CMR VIC=0V to 6V, VIC=6V to 12V 55 75 - dB
Common Mode Input Voltage Range VICM CMR≧55dB 0 - 12 V
OUTPUT CHARACTERISTICS
Output Voltage VOH
RL=10kΩ to V+/2 11.97 11.99 - V Isource=100mA 11.4 11.65 - V VOL
RL=10kΩ to V+/2 - 0.01 0.03 V Isink=100mA - 0.35 0.6 V
Output Source Current Limit1 ISOURCELIM1
[ NJU77903DL3 ] 250 375 495 mA
[ NJU77903KW2 ] : LIM1=OPEN (Figure2-1)
Output Source Current Limit2 ISOURCELIM2 LIM1=V+ (Figure2-1)
NJU77903KW2 ONLY 0 50 150 mA
Output Sink Current Limit1 ISINKLIM1
[ NJU77903DL3 ] 200 375 545 mA
[ NJU77903KW2 ] :
LIM2=OPEN (Figure2-2)
Output Sink Current Limit2 ISINKLIM2 LIM2=V- (Figure2-2)
NJU77903KW2 ONLY 0 40 120 mA
POWER SUPPLY Supply Current IDD No Signal, RL=OPEN - 9.5 12.5 mA
Supply Voltage Rejection Ratio SVR V+ = 6.8V to 36V 70 85 - dB
DYNAMIC PERFORMANCE Unity Gain Frequency fT RL=10kΩ to V+/2, CL=10pF - 1.5 - MHz Phase Margin ΦM RL=10kΩ to V+/2, CL=10pF - 75 - deg
Slew Rate (Note 11) SR GV=0dB, RL=10kΩ to V+/2, CL=10pF,
Vin=4Vpp (4V to 8V) 2.5 3.5 - V/µs
NOISE PERFORMANCE
Equivalent Input Noise
Voltage en f=10kHz, RS=50Ω - 50 - nV/√Hz
Total Harmonic Distortion
+ Noise THD GV=6dB, RF=10kΩ, RL=10kΩ, CL=10pF, Vo=2Vpp, f=10kHz - 0.03 - %
(Note 11) Number specified is the slower of the positive and negative slew rates.
NJU77903
- 4 - Ver.02
■ ELECTRICAL CHARACTERISTICS (V+= +15V, V-= -15V, VIC= 0V, RL=10kΩ, Ta=25ºC, unless otherwise noted.)
PARAMETER PARAMETER TEST CONDITION Min. Typ. Max. UNIT
INPUT CHARACTERISTICS Input Offset Voltage VIO RS=50Ω - 2 8 mV Input Offset Voltage Drift ΔVio/ΔT Ta = -40°C to 125°C - 20 - μV/°C Input Bias Current IB - 1 - pA Input Offset Current IIO - 1 - pA Open Loop Gain AV VO=-14V to +14V, RL=10kΩ to 0V 80 100 - dB
Common Mode Rejection Ratio CMR VIC=-15V to 0V, VIC=0V to 15V 60 80 - dB
Common Mode Input Voltage Range VICM CMR≧60dB -15 - 15 V
OUTPUT CHARACTERISTICS
Output Voltage VOH RL=10kΩ to V+/2 14.97 14.99 - V
Isource=100mA 14.45 14.70 - V VOL
RL=10kΩ to V+/2 - -14.99 -14.97 V Isink=100mA - -14.70 -14.45 V
Output Source Currrent Limit1 ISOURCELIM1
[NJU77903DL3 ] - 400 - mA
[ NJU77903KW2 ] : LIM1 terminal = OPEN , (Figure 2-1)
Output Source Current
Limit2 ISOURCELIM2 LIM1 terminal=V+, (Figure 2-1) NJU77903KW2 ONLY - 60 - mA
Output Sink Current Limit1 ISINKLIM1
[ NJU77903DL3 ] : - 400 - mA
[ NJU77903KW2 ] : LIM2 terminal = OPEN (Figure 2-2)
Output Sink Current Limit2 ISINKLIM2 LIM2 terminal=V-, (Figure 2-2)
NJU77903KW2 ONLY - 30 - mA
POWER SUPPLY Supply Current IDD No Signal, RL=OPEN - 12 16 mA DYNAMIC PERFORMANCE Unity Gain Frequency fT RL=10kΩ to V+/2, CL=10pF - 2 - MHz Phase Margin ΦM RL=10kΩ to V+/2, CL=10pF - 70 - deg
Slew Rate (Note 12) SR GV=0dB, RL=10kΩ to V+/2, CL=10pF,
Vin=4Vpp (-2V to +2V) - 4 - V/µs
NOISE PERFORMANCE
Equivalent Input Noise
Voltage en f=10kHz, RS=50Ω - 50 - nV/√Hz
Total Harmonic Distortion
+ Noise THD GV=6dB, RF=10kΩ, RL=10kΩ, CL=10pF, Vo=2Vpp, f=10kHz - 0.03 - %
(Note 12) Number specified is the slower of the positive and negative slew rates.
■ Output Current Limit Trim Circuit [NJU77903KW2]
Figure 2-1: Output Source Current Limit Trim
1
2
3
4 5
6
7
8V+
LIM1
RLIM1=0Ω to OPEN
RLIM1
Figure 2-2: Output Sink Current Limit Trim
1
2
3
4 5
6
7
8
LIM2
RLIM2
RLIM2=0Ω to OPEN
V-
NJU77903
- 5 - Ver.02
■ TYPICAL CHARACTERISTICS
Supply Current vs. Supply VoltageAV=0dB, RL=OPEN, V-=0V
0
2
4
6
8
10
12
14
16
18
20
0 5 10 15 20 25 30 35 40Supply Voltage V+ [V]
Supp
ly C
urre
nt [m
A]
Ta=-40ºC
Ta=125ºC
Ta=85ºCTa=25ºC
Supply Current vs. TemperatureAV=0dB, RL=OPEN
0
2
4
6
8
10
12
14
16
18
20
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Supp
ly C
urre
nt [m
A]
V+/V-=6.8V/0V
V+/V-=30V/0V
V+/V-=12V/0V
Input Offset Voltage vs. Supply VoltageAV=0dB, V-=0V
-10
-8
-6
-4
-2
0
2
4
6
8
10
0 5 10 15 20 25 30 35 40Supply Voltage V+ [V]
Inpu
t Offs
et V
olta
ge [m
V]
Ta=-40ºC
Ta=125ºC
Ta=85ºCTa=25ºC
Input Offset Voltage vs. TemperatureAV=0dB
-10
-8
-6
-4
-2
0
2
4
6
8
10
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Inpu
t Offs
et V
olta
ge [m
V]
V+/V-=6.8V/0V
V+/V-=30V/0V
V+/V-=12V/0V
Input Offset Voltagevs. Common-Mode Input Voltage
V+/V-=±6V
-15
-12
-9
-6
-3
0
3
6
9
12
15
-8 -6 -4 -2 0 2 4 6 8Common-Mode Input Voltage [V]
Inpu
t Offs
et V
olta
ge [m
V] Ta=-40℃
Ta=25℃
Ta=125℃
Input Offset Voltagevs. Common-Mode Input Voltage
V+/V-=±15V
-15
-12
-9
-6
-3
0
3
6
9
12
15
-16 -12 -8 -4 0 4 8 12 16Common-Mode Input Voltage [V]
Inpu
t Offs
et V
olta
ge [m
V]
Ta=-40℃ Ta=25℃Ta=125℃
NJU77903
- 6 - Ver.02
Input Offset Voltage vs. Output CurrentV+/V-=±6V
-30
-20
-10
0
10
20
30
-250 -200 -150 -100 -50 0 50 100 150 200 250Output Current [mA]
Inpu
t Offs
et V
olta
ge [m
V]
Ta=25℃Ta=- 40℃
Ta=50℃
Ta=85℃
Ta=125℃
OUTPUT SOURCECURRENT
OUTPUT SINK CURRENT
Supply Voltage Rejection Ratiovs. TemperatureV+=6.8V to 36V , V-=0V
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Supp
ly V
olta
ge R
ejec
tion
Rat
io [d
B]
Input Offset Voltage vs. Output CurrentV+/V-=±15V
-30
-20
-10
0
10
20
30
-250 -200 -150 -100 -50 0 50 100 150 200 250Output Current [mA]
Inpu
t Offs
et V
olta
ge [m
V] Ta=25℃Ta=-40℃
Ta=50℃
Ta=85℃
Ta=125℃
OUTPUT SOURCECURRENT
OUTPUT SINK CURRENT
Supply Voltage Rejection Ratiovs. Frequency
V+/V-=12V/0V , VIN:2VPP, GV=40dB, RS=1kΩ, RF=100kΩ, Ta=25ºC
0
10
20
30
40
50
60
70
80
90
100
100 1k 10k 100kFrequency [Hz]
V+
V‐
Supp
ly V
olta
ge R
ejec
tion
Rat
io [d
B]
Supply Voltage Rejection Ratiovs. Frequency
V+/V-=30V/0V, VIN:2VPP, GV=40dB, RS=1kΩ, RF=100kΩ, Ta=25ºC
0
10
20
30
40
50
60
70
80
90
100
100 1k 10k 100kFrequency [Hz]
V+
V‐
Supp
ly V
olta
ge R
ejec
tion
Rat
io [d
B]
NJU77903
- 7 - Ver.02
Common-Mode Rejection Ratio vs. TemperatureV+/V-=±6V
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Com
mon
-Mod
e R
ejec
tion
Rat
io [d
B]
VICM=-6 to 0V
VICM=0 to 6V
Common-Mode Rejection Ratio vs. TemperatureV+/V-=±15V
0
20
40
60
80
100
120
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Com
mon
-Mod
e R
ejec
tion
Rat
io [d
B]
VICM=-15 to 0V
VICM=0 to 15V
Common-Mode Rejection Ratio vs. Frequency
V+/V-=±6V, VIN=3VPP, GV=40dB, RS=1kΩ, RF=100kΩ, Ta=25ºC
0
10
20
30
40
50
60
70
80
90
100
100 1k 10k 100kFrequency [Hz]
Com
mon
-Mod
e R
ejec
tion
Rat
io [d
B]
Common-Mode Rejection Ratio vs. Frequency
V+/V-=±15V, VIN=3VPP, GV=40dB, RS=1kΩ, RF=100kΩ, Ta=25ºC
0
10
20
30
40
50
60
70
80
90
100
100 1k 10k 100kFrequency [Hz]
Com
mon
-Mod
e R
ejec
tion
Rat
io [d
B]
Maximum Output Voltagevs. Output Source Current
V+/V-=12V/0V
10
10.2
10.4
10.6
10.8
11
11.2
11.4
11.6
11.8
12
0 50 100 150 200Output Source Current [mA]
Max
imum
Out
put V
olta
ge [V
]
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=125℃
Maximum Output Voltagevs. Output Source Current
V+/V-=30V/0V
28
28.2
28.4
28.6
28.8
29
29.2
29.4
29.6
29.8
30
0 50 100 150 200Output Source Current [mA]
Max
imum
Out
put V
olta
ge [V
]
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=125℃
NJU77903
- 8 - Ver.02
Maximum Output Voltagevs. Output Sink Current
V+/V-=12V/0V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 50 100 150 200Output Sink Current [mA]
Max
imum
Out
put V
olta
ge [V
]
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=125℃
Maximum Output Voltage vs.Output Sink Current
V+/V-=30V/0V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 50 100 150 200Output Sink Current [mA]
Max
imum
Out
put V
olta
ge [V
]
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=125℃
Input Bias Current vs. TemperatureVICM=0V
1p
10p
100p
1n
10n
100n
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Inpu
t Bia
s C
urre
nt [A
]
V+/V-=±15V
V+/V-=±6V
Input Offset Current vs. TemperatureVICM=0V
1p
10p
100p
1n
10n
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Inpu
t Offs
et C
urre
nt [A
]
V+/V-=±15V
V+/V-=±6V
Pulse ResponseV+/V-±6V, VIN4VP-P, f=100kHz
PulseEdge=10nsec, Gv=0dB, CL=10p, RL=10k
-4
-2
0
2
4
6
8
10
12
-1 0 1 2 3 4 5 6 7 8 9Time [usec]
Inpu
t Vol
tage
[V]
-12
-10
-8
-6
-4
-2
0
2
4
Out
put V
olta
ge [V
]
Input Voltage
Ta=125ºC
Ta=85ºCTa=25ºC
Ta=-40ºC
0
2
4
0
2
4
Output Voltage
Pulse ResponseV+/V-±15V, VIN4VP-P, f=100kHz
PulseEdge=10nsec, Gv=0dB, CL=10p, RL=10k
-4
-2
0
2
4
6
8
10
12
-1 0 1 2 3 4 5 6 7 8 9Time [usec]
Out
put V
olta
ge [V
]
-12
-10
-8
-6
-4
-2
0
2
4
Inpu
t Vol
tage
[V]
Input Voltage
125ºC
85ºC
Ta=25ºC
-40ºC
0
2
4
0
2
4
Output Voltage
NJU77903
- 9 - Ver.02
Voltage Gain vs. TemperatureV+/V-=±6V, VO=-5V to 5V, RL=10kΩ
0
20
40
60
80
100
120
140
160
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Volta
ge G
ain
[dB
]
Voltage Gain vs. TemperatureV+/V-=±15V, VO=-14V to 14V, RL=10kΩ
0
20
40
60
80
100
120
140
160
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Volta
ge G
ain
[dB
]
Equivalent Input Noise Voltagevs. Frequency
RF=2KΩ, RG=20Ω, Ta=25ºC
1
10
100
1000
10000
1 10 100 1k 10k 100kFrequency [Hz]
V+/V-=30V/0V
V+/V-=12V/0V
Equi
vale
nt In
put N
oise
Vol
tage
[nV/
√H
z]
Slew Rate vs. TemperatureV+/V-±6V, VIN4VP-P, f=100kHz
PulseEdge=10nsec, Gv=0dB, CL=10p, RL=10k
0
1
2
3
4
5
6
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Slew
Rat
e [V
/ use
c]
Rise
Fall
Slew Rate vs. TemperatureV+/V-±15V, VIN4VP-P, f=100kHz
PulseEdge=10nsec, Gv=0dB, CL=10p, RL=10k
0
1
2
3
4
5
6
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Slew
Rat
e [V
/ use
c]
Rise
Fall
NJU77903
- 10 - Ver.02
Voltage Gain/Phase vs. FrequencyV+/V-=±6V, Gv=20dB, VIN=-30dBm, RL=10kΩ, CL=10pF
-40
-30
-20
-10
0
10
20
30
40
1k 10k 100k 1M 10M 100MFrequency [Hz]
Volta
ge G
ain
[dB
]
-180
-135
-90
-45
0
45
90
135
180
Phas
e [d
eg]
-40℃ 25℃
85℃ 125℃
Gain
Phase
Voltage Gain/Phase vs. FrequencyV+/V-=±15V, Gv=20dB, VIN=-30dBm, RL=10kΩ, CL=10pF
-40
-30
-20
-10
0
10
20
30
40
1k 10k 100k 1M 10M 100MFrequency [Hz]
Volta
ge G
ain
[dB
]
-180
-135
-90
-45
0
45
90
135
180
Phas
e [d
eg]
-40℃ 25℃
85℃ 125℃
Gain
Phase
Phase Margin vs. Load CapacitanceV+/V-=±6V, RL=10kΩ, VIN=-30dBm, Gv=20dB
-10
0
10
20
30
40
50
60
70
80
90
10p 100p 1n 10nLoad Capacitance [F]
Phas
e M
argi
n [d
eg]
Ta=-40℃
Ta=25℃
Ta=125℃
Phase Margin vs. Load CapacitanceV+/V-=±15V, RL=10kΩ, VIN=-30dBm, Gv=20dB,
-10
0
10
20
30
40
50
60
70
80
90
10p 100p 1n 10nLoad Capacitance [F]
Phas
e M
argi
n [d
eg]
Ta=-40℃
Ta=25℃
Ta=125℃
Unity Gain Frequency vs. Load CapacitanceV+/V-=±6V, RL=10kΩ, VIN=-30dBm, Gv=20dB
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -30 0 30 60 90 120 150Ambient Temperature [ºC]
Uni
ty G
ain
Freq
uenc
y [M
Hz]
CL=1nFCL=10pF
CL=10nF
Unity Gain Frequency vs. Load CapacitanceV+/V-=±15V, RL=10kΩ, VIN=-30dBm, Gv=20dB
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -30 0 30 60 90 120 150Ambient Temperature [ºC]
Uni
ty G
ain
Freq
uenc
y [M
Hz]
CL=1nFCL=10pF
CL=10nF
NJU77903
- 11 - Ver.02
Gain Margin vs. Load CapacitanceV+/V-=±6V, RL=10kΩ, VIN=-30dBm, Gv=20dB,
-10
-5
0
5
10
15
20
25
30
35
40
10p 100p 1n 10nLoad Capacitance [F]
Gai
n M
argi
n [d
B]
Ta=-40℃
Ta=25℃
Ta=125℃
Gain Margin vs. Load CapacitanceV+/V-=±15V, RL=10kΩ, VIN=-30dBm, Gv=20dB
-10
-5
0
5
10
15
20
25
30
35
40
10p 100p 1n 10nLoad Capacitance [F]
Gai
n M
argi
n [d
B]
Ta=-40℃
Ta=25℃
Ta=125℃
Phase Margin vs. TemperatureV+/V-=±6V, RL=10kΩ, VIN=-30dBm, Gv=20dB
-10
0
10
20
30
40
50
60
70
80
90
-60 -30 0 30 60 90 120 150Ambient Temperature [ºC]
Phas
e M
argi
n [d
eg]
CL=1nF
CL=10pF
CL=10nF
Phase Margin vs. TemperatureV+/V-=±15V, RL=10kΩ, VIN=-30dBm, Gv=20dB
-10
0
10
20
30
40
50
60
70
80
90
-60 -30 0 30 60 90 120 150Ambient Temperature [ºC]
Phas
e M
argi
n [d
eg]
CL=1nF
CL=10pF
CL=10nF
Gain Margin vs.TemperatureV+/V-=±6V, RL=10kΩ, VIN=-30dBm, Gv=20dB
-10
0
10
20
30
40
50
-60 -30 0 30 60 90 120 150Ambient Temperature [ºC]
Gai
n M
argi
n [d
B]
CL=10nF
CL=1nF
CL=10pF
Gain Margin vs. TemperatureV+/V-=±15V, RL=10kΩ, VIN=-30dBm, Gv=20dB
-10
0
10
20
30
40
50
-60 -30 0 30 60 90 120 150Ambient Temperature [ºC]
Gai
n M
argi
n [d
B]
CL=10nF
CL=1nFCL=10pF
NJU77903
- 12 - Ver.02
THD + Noise vs. Output Voltage V+/V-=±15V, GV=20dB, RF=9.1kΩ, RS=1kΩ, Ta=25ºC
0.001
0.01
0.1
1
10
0.1 1 10 100Output Voltage [Vpp]
f=100Hz
f=1kHz
f=10kHz
Tota
l Har
mon
ic D
isto
rtio
n +N
oise
[%]
THD + Noise vs. Output VoltageV+/V-=±6V, GV=20dB, RF=9.1kΩ, RS=1kΩ, Ta=25ºC
0.001
0.01
0.1
1
10
100
0.1 1 10 100Output Voltage [Vpp]
f=100Hz
f=1kHz
f=10kHz
Tota
l Har
mon
ic D
isto
rtio
n +N
oise
[%]
Thermal Shutdown Temperaturevs. Supply Voltage
V-=0V
100
120
140
160
180
200
220
0 5 10 15 20 25 30 35 40Supply Voltage V+ [V]
Junc
tion
Tem
pera
ture
[ºC
] Thermal ShutdownTemperature
Recoverytemperature
THD + Noise vs. Output PowerV+/V-=±6V, GV=20dB, RF=9.1kΩ, RS=1kΩ, Ta=25ºC
0.001
0.01
0.1
1
10
0.01 0.1 1 10Output Power [mW]
f=100Hz
f=1kHz
f=10kHz
Tota
l Har
mon
ic D
isto
rtio
n +N
oise
[%]
THD + Noise vs. Output PowerV+/V-=±15V, GV=20dB, RF=9.1kΩ, RS=1kΩ, Ta=25ºC
0.001
0.01
0.1
1
10
0.01 0.1 1 10 100Output Power [mW]
f=100Hzf=1kHz
f=10kHz
Tota
l Har
mon
ic D
isto
rtio
n +N
oise
[%]
NJU77903
- 13 - Ver.02
Output Source Current Limitvs. TemperatureV+/V-=12V/0V, RL=1Ω
0
100
200
300
400
500
600
700
800
900
1000
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Out
put S
ourc
e C
urre
nt L
imit
[mA
]
Output Sink Current Limitvs. TemperatureV+/V-=12V/0V, RL=1Ω
0
100
200
300
400
500
600
700
800
900
1000
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Out
put S
ink
Cur
rent
Lim
it [m
A]
Output Source Current Limitvs. Supply Voltage
Ta=25ºC, RL=1Ω,V-=0V
0
100
200
300
400
500
600
700
800
900
1000
0 5 10 15 20 25 30 35 40Supply Voltage V+ [V]
Out
put S
ourc
e C
urre
nt L
imit
[mA
]
Output Sink Current Limit vs.Supply Voltage
Ta=25ºC, RL=1Ω, V-=0V
0
100
200
300
400
500
600
700
800
900
1000
0 5 10 15 20 25 30 35 40Supply Voltage V+ [V]
Out
put S
ink
Cur
rent
Lim
it [m
A]
Output Sink Current Limitvs. TemperatureV+/V-=30V/0V, RL=1Ω
0
100
200
300
400
500
600
700
800
900
1000
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Out
put S
ink
Cur
rent
Lim
it [m
A]
Output Source Current Limitvs. TemperatureV+/V-=30V/0V, RL=1Ω
0
100
200
300
400
500
600
700
800
900
1000
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Out
put S
ourc
e C
urre
nt L
imit
[mA
]
NJU77903
- 14 - Ver.02
Output Source Current Limit vs. Current Limit Trim Resistance
V+/V-=30V/0V, Ta=25ºC, RL=1Ω
0
50
100
150
200
250
300
350
400
450
0 20 40 60 80 100Trim Resistance [kΩ]
Out
put S
ourc
e C
urre
nt L
imit
[mA
]
1
2
3
4 5
6
7
8
INM INP
NCV+
OUTLIM1
LIM2V-
Output Sink Current Limit vs. Current Limit Trim Resistance
V+/V-=30V/0V, Ta=25ºC, RL=1Ω
0
50
100
150
200
250
300
350
400
0 20 40 60 80 100Trim Resistance [kΩ]
Out
put S
ink
Cur
rent
Lim
it [m
A]
1
2
3
4 5
6
7
8
INM INP
NC V+
OUT LIM1
LIM2V-
Output Source Current Limit vs. Current Limit Trim Resistance
V+/V-=12V/0V, Ta=25ºC, RL=1Ω
0
50
100
150
200
250
300
350
400
0 20 40 60 80 100Trim Resistance [kΩ]
Out
put S
ourc
e C
urre
nt L
imit
[mA
]
1
2
3
4 5
6
7
8
INM INP
NCV+
OUTLIM1
LIM2V-
Output Sink Current Limit vs. Current Limit Trim Resistance
V+/V-=12V/0V, Ta=25ºC, RL=1Ω
0
50
100
150
200
250
300
350
400
450
0 20 40 60 80 100Trim Resistance [kΩ]
Out
put S
ink
Cur
rent
Lim
it [m
A]
1
2
3
4 5
6
7
8
INM INP
NC V+
OUT LIM1
LIM2V-
NJU77903
- 15 - Ver.02
■Application Note The NJU77903 is CMOS operational amplifier that combines rail−to−rail input and output with operating up to 36V. It is able to
output high current without the power booster. Therefore, the NJU77903 is suitable for the application requires high operating voltage and high output current.
This application note is one of effectual measures for understanding the dissipation power, thermal shutdown and behavior of current limit, to avoiding unexpected trebles. This application note consists of following matter.
1. Calculation of dissipation power 2. Thermal shutdown 3. Current limit 4. Resolver Excitation Circuit 5. Input Overvoltage Protection This description does not assure the actual behavior. The performance of the NJU77903 should be conducted trials using
actual equipment.
NJU77903
- 16 - Ver.02
1. Calculation of dissipation power The dissipation power is determined by the type of loads. It in case of resistance load and inductance load are shown
respectively on this note. The symbols of supply voltage are defined as VDD and VSS instead of V+ and V-. 1.1 Calculation of dissipation power with resistance load
The dissipation power from the time 0 toπ and it fromπ to 2π are calculated separately.
■ t=0 to π Fig. 1.1 shows the internal current from 0 to π, Fig. 1.2 shows the Output current and the Output voltage from 0
to π. Io is the Output current and IA is the current with the exception of the Output current. The dissipation power from 0 toπis expressed by the following equation.
R
VRVVIVV
dRVVVIVV
dIVVIVVP
OODDASSDD
OODDASSDD
OODDASSDDR
22
sinsin1
sinsin1
2
0
01
Fig. 1.1 the internal current from 0 to π
VDD
VSS
R
IA IO
Fig. 1.2 the Output current and Voltage with resistance load
Vosinθ
π 2π0
IOsinθIO
-IO
VO
-VO
NJU77903
- 17 - Ver.02
■ t=π to 2π Fig. 1.3 shows the internal current from π to 2π, the dissipation power from π to 2π is expressed by the following
equation.
R
VRVVIVV
dRVVVIVV
dIVVIVVP
OOSSASSDD
OSSOASSDD
OSSOASSDDR
22
sinsin1
sinsin1
2
2
2
2
In the case of VDD = -VSS, the internal loss PR is the following result.
R
VRVVIVVP OODD
ASSDDR 22 2
■ example for use
The dissipation power is calculated on the following condition. Condition: VDD/VSS= +6V/-6V Vo=1Vpk R=20Ω(Io=1Vpk/20Ω=50mApk=100mApp) IA=1.5mA
mWVVVmAVV
RV
RVVIVVP OODD
ASSDDR
184202
120
1625.166
22
2
2
On the single power supply operation (VDD/VSS= +12V/0V) with the load resistance(R=20Ωwhich is the middle point Voltage), the dissipation power is 187 mW. It is same as previous one.
Fig. 1.3 the internal current from π to 2π
VDD
VSS
R
IA
IO
Fig.1.4 the Output current and Voltage with resistance
Vosinθ
π 2π0
IOsinθIO
-IO
VO
-VO
NJU77903
- 18 - Ver.02
1.2 Calculation of dissipation power with inductance load The dissipation power from the time 0 toπ and it fromπ to 2π are calculated separately.
■t=0 to π Fig. 1.5 shows the internal current from 0 to πand Fig. 1.7 shows the
Output current and the Output Voltage from 0 to π. Since it is an inductance load, the Output Current and the Output Voltage make 90-degree phase difference. Io is the Output Current and IA is the current with the exception of the output current.
The loss by output current from 0 to π is expressed by the following equation.
2sin21sinsincos1 OOODDOODDLO IVIVIVVP
The loss by output current from 0 to π is expressed by the following equation.
ODDASSDD
OOODDASSDDL
IVIVV
dIVdIVIVVP
2
2sin211sin1
001
■t=π to 2π
Fig. 1.6 shows the internal current from π to 2π.The loss by output current fromπ to 2π is expressed by the following equation.
2sin21sinsincos2 OOOeeOSSOLO IVIVIVVP
The Dissipation power from π to 2π is expressed by the following equation.
OSSASSDDOOOeeASSDDL
IVIVVdIVdIVIVVP 22sin211sin1 22
2
In the case of VDD=-VSS, the dissipation power is the following result.
ODDASSDDL
IVIVVP 2
Fig. 1.5 the internal current from 0 to π
VDD
VSS
L
IA IO
Fig.1.6 the internal current from π to 2π.
VDD
VSS
L
IA
IO
Fig.1.7 the Output current and Output Voltage with inductance load
IOsinθ
VOcosθ
π 2π0
IO
-IO
VO
-VO
NJU77903
- 19 - Ver.02
■ example for use The dissipation power is calculated on the following condition.
Condition: VDD/VSS= +6V/-6V Io=50mApk(100mApp)
IA=1.5mA
mWmAVmAVVIVIVVP ODDASSDDL 20950625.1662
On the Single power supply operation whose equivalent circuit is Fig1.8, the dissipation power is as follows. Condition: VDD/VSS= +12V/0V Io=50mApk(100mApp) IA=1.5mA
mWmAVmAVVIVIVVP ODDASSDDL 2095021225.1662
Fig1.9 is the supply-voltage dependency of the dissipation power on inductance load. The NJU77903 should be operated in lower than package power (PD).
Internal loss vs. Supply Voltageload inductance, IA=1.5mA
0
200
400
600
800
1000
1200
1400
0 5 10 15 20 25 30 35 40Supply Voltage [V]
Inte
rnal
loss
[m
W]
Io=200mApp
Io=150mApp
Io=100mApp
Io=50mApp
Fig1.9 the supply-voltage dependency of the dissipation power by inductance load. (Single−Supply)
Fig1.8. Equivalent circuit (Single Supply
VDD
L
VDD/2
VDD/2
-VDD/2
L
NJU77903
- 20 - Ver.02
1.3 the current with the exception of the Output current Fig1.10 shows the Evaluation circuit of the current with the exception of the Output current. This result shows Fig1.11 and
Fig1.12. Fig1.10 the current with the exception of the Output current
The current with the exception of the Outputcurrent vs.Supply Voltage
AV=0dB, RL=OPEN
0
1
2
3
4
5
6
0 5 10 15 20 25 30 35 40Supply Voltage [V]
The
curr
ent w
ith th
e ex
cept
ion
ofth
e O
utpu
t cur
rent
[mA
]
Ta=-40ºC
Ta=-55ºC
Ta=125ºCTa=85ºC
Ta=25ºC
Fig1.11 the current with the exception of the Output current vs. Supply Voltage
The current with the exception of the Outputcurrent vs. temperature
AV=0dB, RL=OPEN
0
1
2
3
4
5
6
-50 -25 0 25 50 75 100 125 150 temperature [ºC]
The
curr
ent w
ith th
e ex
cept
ion
ofth
e O
utpu
t cur
rent
[mA
]
V+=6.8V
V+=30VV+=12V
Fig1.12 the current with the exception of the Output current vs. temperature
VDD
VSS
IA
A
Open
NJU77903
- 21 - Ver.02
2. Thermal Shutdown The NJU77903 has thermal shutdown (TSD) function in case that dissipation power exceeds Package Power PD. Fig 2.1
shows Thermal Shutdown Temperature vs. Supply Voltage. When the junction temperature exceeds the shutdown temperature approximately 175°C on the Supply Voltage 12V, the TSD function operates and disables the output current. Under the TSD operation, the output terminal is regarded as high impedance terminal. If the output voltage is necessarily GND Voltage, the output terminal should be connected to GND via resistance. When the junction temperature cools to recovery temperature approximately 160°C on the Supply Voltage 12V, the NJU77903
automatically recover from the TSD operation and output current is re-enabled. The TSD function is not intended to replace proper heat sinking. The NJU77903 should be operated in lower than 150°C the maximum junction temperature.
Fig 2.1 Thermal Shutdown Temperature vs. Supply Voltage
Thermal Shutdown Temperaturevs. Supply Voltage
V-=0V
100
120
140
160
180
200
220
0 5 10 15 20 25 30 35 40Supply Voltage V+ [V]
Junc
tion
Tem
pera
ture
[ºC
] Thermal ShutdownTemperature
Recoverytemperature
NJU77903
- 22 - Ver.02
3. Current Limit The NJU77903 is designed with internal current limit in case of overload condition. Fig. 3.1 shows the Output Source Current
Limit vs. temperature and Fig. 3.2 shows the Output Sink Current Limit vs. temperature respectively. With the increasing in temperature, the limits are reduced.
Fig. 3.3 shows Output Source Current vs. time. Output Source Current Limit decreases gradually since junction temperature
rises. The output current is temporarily disabled due to TSD operation in Ta=160°C line of Fig. 3.3 (time = 55msec to 75msec). When the junction temperature falls, the output current is automatically recovered (time = 75msec). In order to prevent from damage the NJU77903 should be running under maximum junction temperature.
Fig3.1 Output Source Current Limit vs. temperature
Output Source Current Limit vs. TemperatureVDD=12V, RL=1Ω
0
100
200
300
400
500
600
700
800
900
1000
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Out
put S
ourc
e C
urre
nt L
imit
[mA
]
Output Sink Current Limit vs. TemperatureVDD=12V, RL=1Ω
0
100
200
300
400
500
600
700
800
900
1000
-50 -25 0 25 50 75 100 125 150Ambient Temperature [ºC]
Out
put S
ink
Cur
rent
Lim
it [m
A]
Fig3.2 Output Sink Current Limit vs. temperature
Fig3.3 Output Source Current Limit vs. Time
Output Source Current vs. timeVDD=12V, RL=1Ω
0
50
100
150
200
250
300
350
400
450
500
-25 0 25 50 75 100 125 150time [msec]
Out
put S
ourc
e C
urre
nt [
mA
]
Ta=25℃Ta=85℃
Ta=125℃Ta=150℃
ThermalShutdown
ThermalShutdown
NJU77903
- 23 - Ver.02
4. Resolver Excitation Circuit Fig4.1 shows the Typical Resolver Excitation Circuit using the NJU77903 and the NJM2904. The NJM2904 (A) makes
midpoint voltage and the NJM2904 (B) makes signal phase inversion. Fig4.2 is the circuit without NJM2904 (A), its dominant voltage is given by resistance voltage divider. Fig4.3 is the circuit omitted NJM2904 (A) and NJM2904 (B), it is available under the condition using the input signals which have phase difference one another. Fig 4.4 shows output voltage and current. The output voltage (Vout) is the voltage drop on the inductance load, the output current (Iout) is defined as positive side according Fig 4.4. The inductance load makes phase difference between Vout and Iout. However, it is not just 90° because of internal resistance on inductance. The performance of resolver excitation should be conducted trials using actual equipment.
Fig4.1 Resolver Excitation Circuit Fig4.2 Resolver Excitation Circuit (This version omitted NJM2904(A))
Fig4.3 Resolver Excitation Circuit (This version omitted NJM2904)
Vout
Iout
NJU77903
NJU77903NJM2904
AC
Vout
Iout
NJU77903
NJU77903
AC1
AC2
Vout
Iout
NJU77903
NJU77903
NJM2904(A)
NJM2904(B)
AC
DC
NJU77903
- 24 - Ver.02
Fig 4.4 Output Voltage and Output Current of Resolver Excitation Circuit
Output VoltageV+/V-=12V/0V, Freq=10kHz
-5
-4
-3
-2
-1
0
1
2
3
4
5
0 0.05 0.1 0.15 0.2time [msec]
Out
put V
olta
ge V
out [
V]
-40℃
25℃
125℃
Output CurrentV+/V-=12V/0V, Freq=10kHz
-80
-60
-40
-20
0
20
40
60
80
0 0.05 0.1 0.15 0.2time [msec]
Out
put C
urre
nt Io
ut [m
A]
-40℃
25℃
125℃
NJU77903
- 25 - Ver.02
5.Input Overvoltage Protection If the input voltage exceeds the supply rail, You must use a limiting resistor as shown in Fig5.1, because you must be limited
to less than the input current of absolute maximum ratings. Resistance value of the current limiting and can be calculated by the following equation.
IIN = ≦10mA, (VSIG≧V+) IIN = ≦10mA, (VSIG≦V-)
Fig5.1a Input Overvoltage (VSIG≧V+) Fig5.1b Input Overvoltage (VSIG≦V-)
VSIG - V+ RIN
V- - VSIG
RIN
V+
V-
VOUT
RIN
RIN
VSIG+
VSIG-
IIN
IIN
V+
V-
VOUT
RIN
RIN
VSIG+
VSIG-
IIN
IIN
NJU77903
- 26 - Ver.02
■ PACKAGE DIMENSIONS
6.54±0.19
5.34±0.12
6.04±
0.06
1.14±
0.13
0.52±0.06
0.52±0.06
5.34±0.12
MIN4.15
2.29±0.09
(4.8)
(2.5)
(1.4
)
(0.9
)
(1.7
)
0~0.25
0.51
1.27
0.5±0.12 2.5±
0.5
TO252−5
Unit:mm
NJU77903
- 27 - Ver.02
■ PACKAGE DIMENSIONS
[CAUTION] The specifications on this databook are only given for information ,
without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.
Unit:mm
DFN8-W2 (ESON8-W2)
1.5
+0.0
6 -0
.04
0.01
+0.0
10
-0.0
08
3.0±0.05
3.0 ±
0.05
0.2 S
0.7±
0.05
0.325 0.3 AB M S
0.3 ±
0.05
0.65
B
A
S
S 0.05
2.3 +0.06-0.04
+0.06 -0.04 0.05
C0.5
3-R0.5
S A 0.10 M
S M
B
0.1
0