high density secure memory 8gb (1gx64/x72) ddr4 sdram · 2018. 1. 18. · models 4n1g64t-xbx and...
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ACQUIRE ACQUIREACQUIRE
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DIGITIZEPROCESSPROCESSSTORAGESTORAGEEXPLOITEXPLOITDISSEMINATEACQUIREACQUIRE
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DIGITIZEPROCESSPROCESSSTORAGESTORAGEEXPLOITACQUIREACQUIRE
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DIGITIZEPROCESS ACQUIREACQUIRE
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Mercury Systems is a leading commercial provider of secure processing subsystems designed and made in the USA. Optimized for customer and
mission success, Mercury’s solutions power a wide variety of critical defense and intelligence programs.
• Nominal, park, and dynamic on-die termination (ODT)• Data bus inversion (DBI) for data bus• Command/Address (CA) parity• Databus write cyclic redundancy check (CRC)
Benefits• 75% space-savings vs discrete chip packages• Military-grade performance without sacrificing the benefits of
DDR4 memory• Eutectic solder balls for superior board-level reliability• Up to 88% component reduction• 100% burn-in and electrical test for the highest quality assurance• Manufactured in a DMEA-trusted facility • Available component End of Life management for long-term supply
continuity
Plastic Ball Grid Array (PBGA) Package• 13 x 20 x ≤2.1 mm package• 321 pin count• 0.8 mm pitch• Moisture Sensitivity Level (MSL) 3
* Advanced Product Development -– This product is under development, is not qualified or characterized and is subject to change or cancellation without notice.
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Models 4N1G64T-XBX and 4N1G72T-XBX
Mercury Systems’ unique miniaturization technology densifies DDR4 SDRAM memory in a compact, highly ruggedized package. This device is ideally suited for applications requiring high-speed DDR4 memory optimized for size, weight, and power.
Mercury Systems is currently engaging with customers in design opportunities requiring DDR4 memory performance. Please contact Mercury to participate in this design program.
Product Features• DDR4 Data Rate = DDR4-1600, DDR4-1866, DDR4-2133,
DDR4-2400• VCC = VCCQ = 1.2V• VPP = 2.5V• Military and Industrial temperature ranges• Output driver calibration• Configured as 1-Rank x64 or x72-bit data• 16 internal banks: 4 groups of 4 banks each• 8n-bit prefetch architecture• Programmable data strobe preambles• Command/Address latency (CAL)• Multipurpose register READ and WRITE capability• Write and read leveling• Self refresh mode and low-power auto self refresh (LPASR)
ADVANCED*
High Density Secure Memory8GB (1Gx64/x72) DDR4 SDRAM
• Advanced miniaturization technology• Data transfer speed up to 2400 Mb/s• -55 to +125°C operating temperature• Including Decoupling and Terminations• Manufactured in a DMEA-trusted US facility
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Innovation That Matters, and Mercury Systems are trademarks of Mercury Systems, Inc. Other product and company names mentioned may be trademarks and/or registered trademarks of their respective holders. Mercury Systems, Inc. believes this information is accurate as of its publication date and is not responsible for any inadvertent errors. The information contained herein is subject to change without notice.Copyright © 2017 Mercury Systems, Inc. www.mrcy.com/ddr4 5010.05E_0517_8GB_DDR4_1Gx64-x72
INNOVATION THAT MATTERS ™
Microelectronic Secure SolutionS 3601 East University DrivePhoenix, AZ 85034-7217 USA+1 (602) 437-1520Fax +1 (602) 437-1731
corporate HeadquarterS 250 Minuteman RoadAndover, MA 01810-1008 USA+1 (978) 967-1401+1 (866) 627-6951Fax +1 (978) 256-3599
Figure 1 - Density Comparison for the x72 Device
4N1G72T-XBX SAVINGS
Area 1056 mm2 260 mm2 75%
12 78 FBGA
8 2.0
78 FBGA
8 2.0
78 FBGA
8 2.0
78 FBGA
8 2.0
78 FBGA
8 2.0
78 FBGA
8 2.0
78 FBGA
8 2.0
78 FBGA
8 2.0
78 FBGA
8
204N1G72T-XBX
13
Clock, control, command, and address terminations:
VTT
CK CK_n
DDR4SDRAM
DDR4SDRAM CS_n, BA[1:0], BG[1:0],
ACT_n, A[13:0], RAS_n,CAS_n/A15, WE_n/A14,
PARITY, CKE, ODT
BA[1:0]BG[1:0]ACT_nA[13:0]RAS_n
CAS_n/A15WE_n/A14
CKEODT
RESET_nPARITYALERT
BA[1:0]: DDR4 SDRAM BG[1:0]: DDR4 SDRAM ACT_n: DDR4 SDRAM A[13:0]: DDR4 SDRAM RAS_n: DDR4 SDRAM CAS_n/A15: DDR4 SDRAM WE_n/A14: DDR4 SDRAM CKE: DDR4 SDRAM ODT: DDR4 SDRAM RESET_n: DDR4 SDRAM PAR: DDR4 SDRAM ALERT_DRAM: DDR4 SDRAM
DQs U1
DM_n/DBI_n
CS_n DQS_t DQS_c
DQ0-7
CS_nDQS0_tDQS0_c
DBI0_n/DM0_n
DQs U4
DM_n/DBI_n
CS_n DQS_t DQS_c
DQ24-31
DQS3_tDQS3_c
DBI3_n/DM3_n
DQs U7
DM_n/DBI_n
CS_n DQS_t DQS_c
ZQZQ0 ZQZQ3 ZQZQ6
DQ48-55
DQS6_tDQS6_c
DBI6_n/DM6_n
DQs U2
DM_n/DBI_n
CS_n DQS_t DQS_c
DQ8-15
DQS1_tDQS1_c
DBI1_n/DM1_n
DQs U5
DM_n/DBI_n
CS_n DQS_t DQS_c
DQ32-39
DQS4_tDQS4_c
DBI4_n/DM4_n
DQs U8
DM_n/DBI_n
CS_n DQS_t DQS_c
ZQZQ1 ZQZQ4 ZQZQ7
DQ56-63
DQS7_tDQS7_c
DBI7_n/DM7_n
DQs U3
DM_n/DBI_n
CS_n DQS_t DQS_c
DQ16-23
DQS2_tDQS2_c
DBI2_n/DM2_n
DQs U6
DM_n/DBI_n
CS_n DQS_t DQS_c
DQ40-47
DQS5_tDQS5_c
DBI5_n/DM5_n
DQs U9
DM_n/DBI_n
CS_n DQS_t DQS_c
ZQZQ2 ZQZQ5 ZQZQ8
DQ64-71
DQS8_tDQS8_c
DBI8_n/DM8_n
Figure 2 - Block Diagram for the x72 Device
Figure 3 - Part Numbering Matrix
4 N 1GXX T - XX B XProduct Grade
M = Military (-55°C to +125°C) I = Industrial (-40°C to +85°C) ES = Engineering Sample
321 PBGA
Speed16 = 1600, 18 = 1866, 21 = 2133, 24 = 2400
Mercury Systems DDR4 SDRAM
1.2V Power Supply
Capacity1G641G72
Termination
Example Part Number: 4N1G72T-24BM