growth of mgo-based tunnel junctions
DESCRIPTION
Rate:1.8 Å /Min. Rate:0.6 Å /Min. 15nm. 10nm. nm 1. -1. 0. 1 m m. 0. 0. 1 m m. 0. 0. 1 m m. 3 nm MgO. Ge buffer. Ge(100). Epitaxial growth and structural characterization of MgO-based magnetic tunnel junctions and ferromagnetic/MgO/semiconductor heterostructures. - PowerPoint PPT PresentationTRANSCRIPT
Epitaxial growth and structural characterization of MgO-based magnetic
tunnel junctions and ferromagnetic/MgO/semiconductor heterostructures
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R(o
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H(Oe)
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Inte
nsi
ty(a
.u.)
time(seconds)
Fe on Fe @RT
Y.F. Chiang, K. Pi, Y. Li ,X. Tan, H. W. K. Tom and R.K. KawakamiDepartment of Physics and Astronomy, University of California, Riverside, CA 92521
Growth of MgO-based tunnel junctions Growth of FM/MgO/semiconductors heterostructuresGe, GaAs
• Layer by layer growth of MgO barrier on Fe.• TMR measured at RT and low temperature.• Use SHG to probe the Fe/MgO interfacial properties.
0 1m
0
10nm
-10 1m
nm1
0 1m
0
15nmRate:1.8 Å/Min Rate:0.6 Å/Min
Ge(100)
Ge buffer3 nm MgO
0.4m
Grow 3nm MgO at 25°C
• Grow atomically flat MgO on Ge(100), GaAs(100).• Growth rate is crucial for flatness of MgO/GaAs(100).
GaAs(100)
3 nm MgO
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Inte
nsi
ty(a
rb. U
nit)
Time (seconds)
MgO on Fe at 50C, rate ~ 0.973A/min
Fe/Fe
MgO/Fe