growth, morphology, and resistivity: bi/si(001) and bi/bi(111) b5c2 · 2008. 11. 25. · island...
TRANSCRIPT
In-situ analysis of morphology induced surface scattering phenomena via resistance measurements.
Goal
Lateral roughness
[1] G. Jnawali, H. Hattab, B. Krenzer, and M. Horn-von Hoegen, Phys. Rev. B 74,195340 (2006).
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[6] B.N.J. Persson et al., Chem. Phys. Lett. , 204 (1991).
[7] M. Horn-von Hoegen, Z. Kristallogr. , 591-629 and 684-721 (1999).
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[9] R. Smoluchowski, Phys. Rev. 60, 661 (1941).
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References
B5SFB 616 C2
Growth, Morphology, and Resistivity:
Bi/Si(001) and Bi/Bi(111)
SFB 616H. Hattab, G. Jnawali, A. Bernhart, E. Zubkov, C. Bobisch, B. Krenzer, R. Möller,
and M. Horn von Hoegen
University Duisburg-Essen, Campus Duisburg
�
�
�
(00)-spot intensity oscillation at 80 K.
Layer by layer growth.
Decay of the oscillation.
Kinetic roughening.
Step flow growth > 300K.
Bi/Bi(111)
Vertical roughness
Surface diffusion barrier
Growth at 150 K
�
�
�
In-situ measurements of the resistance andLEED (00)- spot intensity during deposition ofBi on Si(001) at 150 K.
Quasi-bilaye growth > 5.6 BL [1].
slope of the resistance curve changes withchanging the crystal phase.
At 5.6 BL coverage, quasi-12-fold symmetryLEED pattern and a ring of intensitysurrounding it.
ordered (111) & rotationally (110)
Ring disappears at higher coverage.
disorderedcrystallites.
Bi/Si(001)
500 nm
30 nm Bi film/Si(001) 8 nm
Twins
rotated
grain boundary
104
105
106
107
(00)-
spot
Inte
nsi
ty(c
ps)
151050Coverage (nm)
403020100Coverage (BL�
Bi/Bi(111) @ 80 K
Shutter open
6
789
105
2
3
4
5
6
789
106
2
3
4
5
Inte
nsi
ty (
a.u
.)
151050
Coverage (BL)
300 K
250 K
180 K
1.0
0.5
0.0
G(S
)
86420Energy
1/2(eV)
1.0
0.5
0.0
G(S
)
10 20 300 40 50 60 70 80
S=3 S=4 S=5
0.5 BL Bi/Bi(111) @ 80 K
0.5 BL Bi/Bi(111) @ 180 K
S=3 S=4 S=5
Energy (eV)
40
30
20
10
Isla
nd
sep
ara
tion
,<
L>
(n
m)
Inv. Temperature, 1/ T (×10-3
K-1)
Islan
d d
en
sity,(cm
-2)
141210864
100125150175200 75
= 135 meV10
11
1012
LEEDSTMPower spectrum (STM)Fit
1013
120nm
0.5 Bi on Bi(111) @ 130 KT = 130 KD
k (% BZ)ll
E = 71 eVe0.5 BL Bi on Bi(111) @ 80K
T = 80 KD
(00) (01)
(01)*
In-situ (00)-spot profile analysis:
�
�
Profile changes periodically from sharp (in-phase)to shoulder (out-of-phase).
Perfect 2D growth in the first layer.10
1
102
103
104
105
Inte
nsi
ty (
Counts
/s)
-40 -20 0 20 40kll (%BZ)
1.0
0.8
0.6
0.4
0.2
0.0
Coverage (BL)
(00)-spot profiles:
Ee = 179 eVS = 3.5
= 24°
Surface
e
�
(00)-spot
6exp d
b
EL
k T
� �� � � �
� �
101
102
103
104
105
106
107
108
Inte
nsi
ty (
cou
nts
/s)
9080706050403020
Scattering angle 2 θ (deg)
Bi(111)Bi(222)
Bi(333)
Si(002)
Si(004)
Bi(111) Peak
24°22°
25 nm Bi/Si(001)6nm Bi: T = 150 K
T = 450 K+19nm Bi: T = 450 K
D
A
D
�
�
�
Henzler ring at 0.5 BL coverage.
Well-defined terrace size distribution [10].
Ring diameter decreases with increasing thedeposition temperature.
Island separation increases.
Quasidendritic island shape (kinetic limitation ofedge diffusion).
�Arrhenius plot of the average island separation< > and the island density (< > ~ ) [11]:L n L n
x x
1/2
�The slope of the fit gives an intraterrace diffusionenergy of = 135 meV [8].Ed
�
�
�
�
Normalized central spike intensity G(S) of the LEED(00)-spot profile as a function of scattering phase S.
The curves fit well with 2D model, i.e., cosine behavior[7].
Island height: d =0.389 nm at 80 K and d =0.395 nmat 180 K [8].
Observation of the electron density smoothening effectfor small islands (Smoluchowski effect) [9].
80 K 180 K
�
�
�
�
Periodic change of central spike from one in-phase condition to the next one.
Spike vanishes at out-of-phase, showing onlyshoulders.
Total intensity is conserved.
2D island distribution.
-20 0 20
0.5 BL Bi on Bi(111) film @ 80 K
k (%BZ)ll
-10 0 10 -10 0 10-10 0 10
103
104
105
106
Inte
nsi
ty (
Co
un
ts/s
)
-40 -20 0 20 40 -20 0 20 -20 0 20-20 0 20
< > = 4.6 nmL < > = 11 nmL < > = 18 nmL < > = 14 nm
@ 130 K
E =50 eV, S = 4.5
(00)-spote
@ 150 K @ 200 K
k (%BZ)ll
k (%BZ)ll
k (%BZ)ll k (%BZ)ll
k (%BZ)llk (%BZ)ll
k (%BZ)ll
104
105
106
Inte
nsi
ty (
cps)
-50 0 50
k [% BZ]
60
50
40
Energy (eV)
4244
4648
5254
5658
0.5 BL Bi on Bi(111) @ 80 K(00)-spot profiles
k||(%BZ)
S = 4
S = 5
S = 4.5
Annealing behavior (80 K- 450 K)
�
�
�
(00)-spot profile variation during the annealing.
Central spike increases in the expense ofshoulder.
The shoulder diameter decreases after 220 K.
Rapid increase of island separation at 220 K.
35
30
25
20
15
10
5
0
Isla
nd S
epera
tion (
nm
)
400300200100
Temperature (K)
< > = 4.94 nmL
0.5 BL Bi/Bi(111) film
TD= 80 K
0.5 Bi on Bi(111) @ 130 KT = 130 KD
T = 300 KA
200 nm
�Coalescence of islands can be observed in STMtopography.
2 BL
3.5 BL
5.6 BL
(1)
(2)
(3) (4) (5)
-100 0 100
5.6 BL Bi/Si(001) @ 150 KT = 150 KD
E = 60 eVe
k (%BZ)ll
(00) (01)
(01)*
-100 0 100
E = 95 eVe
5.6 BL Bi/Si(001) @ 300 KT = 150 KD
T = 450 KA
k (%BZ)ll
(00) (01)
(01)*
-100 0 100
17 BL Bi/Si(001) @ 150 KT = 150 KD
k (%BZ)ll
(00) (01)
(01)*E = 60 eVe
-200 -100 0 100 200
25 nm Bi on Si(001)6 nm Bi: T = 150 K
T = 450 K
+19 nm Bi: T = 450 K
D
A
D
k (%BZ)ll
E = 293 eVe
(01)
(01)*
(00)
104
105
106
107
108
109
1010
1011
Inte
nsity (c
ps)
543210
Coverage (BL)
15
10
5
0
-5
Re
l. Re
sist
anc
e (
DR/R
in %
)
10
5
0
FW
HM
(%BZ)
Bi/Bi(111) @ 80 K
(00)-spot intensityrel. resistance (8nm film)FWHM of (00)-spot (shoulder)
�
�
�
Drastic change in resistance at submonolayercoverage (Scattering at surface adatoms) [5,6].
Resistance oscillation almost matches with theoscillation of lateral surface roughness.
Bulk contribution dominates at higher coverages.
Morphology
Ex-situ film characterization
AFM
XRD
- 3 fold symmetry Bi islands.
- Twins & rotated islands.
- Low density of screw dislocations.
- Film relaxed to bulk (d = 0.394 nm).
-
Homogenious thickness & high crystallanity
Bi(111)
Kiessig fringes [4]:
.
Annealing to 450 K
�
�
�
Ring disappears during (at T = 230 K).Annealing
Spot splitting in LEED & height contrast in STM.
Periodic surface height undulation via interfacialmisfit dislocation network [2].
Average dislocation distance = 1.9% BZ (~20nm).
Additional Bi deposition at 450 K
�
�
�
Caping of height undulation.
Average terrace size > 400 nm.
No defects and surface contamination [3].
Inte
nsi
ty (
arb
. u
nits
.)
-40 0 40kll (%BZ)
80 K
240 K
400 K
280 K
360 K
320 K
200 K
160 K
120 K
0.5 BL Bi on well-annealed 25 nm Bi(111)/Si(001):Spot profiles during annealing right after growth @ 80 K
Ee = 49.3 eV
k (%BZ)ll
-200 -100 100 200
17 BL Bi/Si(001) @ 300 KT = 150 KD
T = 450 KA
E = 60 eVe
(00) (01)
(01)*
-200 -100 0 100 200100
-4 0 4
k�� (% BZ)
(10)*-Spot
59 eV
-4-4 00 44
k�� (% BZ)
10096 104
(10)-Spot
59 eV
-4 0 4
k�� (% BZ)
(00)-Spot
59 eV
100 nm
2.2 nm
25 nm Bi/Si(001):
6 nm : T = 150 K
T = 450 K
19 nm:
D
A
DT = 450 K
He
igh
t (Å
)
Lateral distance, (nm)x
-0.5
0.0
0.5
100806040200
Measured
Fitted by:
||,edge| |= 0.377 nm
= (6.6 ± 0.3) nm
b
t
< >adis
� �
2||,edge
2 2( )
nn
b th x
x x t�� �
� �� �� ��
100 nm
1n
m
grain boundary
Bi steps
Si steps
20 nm20 nm
6 nm Bi/Si(001):T = 150 K
T = 450 KD
A
eBi(111) film
< >L < >
island