gencoa 3g circular magnetron€¦ · gencoa 3g circular magnetron presenting gencoa’s 3rd...

Gencoa3G Circular MagnetronPresenting Gencoa’s 3rd generation range of circular magnetrons

November 2017 www.gencoa.com 1

November 2017 2www.gencoa.com

• Product Overview

• Introduction

• 3G Design Features

• 3G Mechanical Options

• Low pressure operation

• High Yield Magnetics from 4” target

• High Strength Magnetics

• Performance curves

• Deposition Rate

• Conclusion

Copper target, DC 300W, 8.5 E-3 Torr

Copper target, RF 300W, 8.5 E-3 Torr

Contents


3G

Gencoa circular product range

3G magnetron features

• Launched in 2017

• Works in wide range of pressure – into 10-6 Torr range

• Compact Size

• Unique non-bellow tilted magnetron head

• High Yield magnetics for the 4” target size

• Magnetic material sputtering

• Gas Injection as standard

• PEEK insulation to reduce outgassing

• Accommodates different target thickness

• DC, DC pulse, RF and HIPIMS ready





Available in a choice of five assembly options:

• 3G - Full option with 45⁰ tilt, RF /HIPIMS ready and gas injection

• 3G(A) - The cathodes are supplied with a straight shaft, RF/HIPIMS ready and gas injection

• 3G(B) - The basic design with only gas injection as option

• 3G(C) - This model comes with tilt and gas injection but no power connection box.

• 3G(E) – Externally-mounted magnetron with gas injection and RF/HIPIMS ready

3G

3G(E)

3G

(C)

3G

(B)

3G cathode variations


• Small head size – approx. 1” larger than target size

• Most compact tilt height in industry – tilt pivot point is 1” from cathode rear allowing higher tilt angles

• 3G dimensions allow for smaller chambers to be used whilst having the same tilt and head positions

C

A

B24.4

Target A B C

2” 92.3 83.8 76.2

3” 97.7 85.7 101.6

4” 114 101.5 128.1

3G small head size and tilt means smaller chambers

• ±45° tilt without bellows

• Angle can be viewed and adjusted from the front of the cathode

• The 2 position clamp pressure is released by means of a supplied tool or by hand, the head is rotated to the desired angle, then the clamp is re-fixed to the first ‘notch’ tight position

• To measure the angle, there is a milled slot on the clamp that is aligned with the protractor angle allowing the tilt angle to be fixed accurately to 1°.

• The protractor is removable.


Shaft

Angle Pointer

Tilt Clamp

Angle Call out

45° tilted magnetron

Innovative head angle adjustment


• Target clamp adjust to the target thickness. anti-sticking materials used for the threaded fixing

• Can use a thermal conduction gasket between target and cooled diaphragm

• High water flow (2 l/min) and diaphragm cooling for high power capacity

• Directly cooled targets available – factory configured

Threaded Target Clamp

PEEK Insulator (reduces Outgassing)

4” HY target with graphite gasket and diaphragm

Eroded Target

Thermal Conduction Sheet (Graphite)

Diaphragm

Self-adjusting target clamps

3G mechanical option matrix

ModelGas

injectionTilt

RF/ HIPIMS

Shutter Chimney Wall mount feedthrough

Water-cooled anode

Hidden anode

3G • • • • • • • •

3G(A) • • • • • • • •

3G(B) • • • • • • • •

3G(C) • • • • • • • •

3G(E) • • • • • • • •


• Standard Feature

• Optional

• Not Applicable


Various mechanical options available

• Design allows to fit manual and pneumatic shutter

• Anode cooling to provide extra source cooling for HOT chamber environments

• Hidden anode

• Sputter chimney

• Quick coupling feedthrough

• ISO or CF flange mounting option

Shutter (Optional)

Power Connector (N type /7-16”/HN)

Anode Cooling(Optional) Wall Mount

Feedthrough (Optional)

Shutter Adjustment Manual/Pneumatic (Shown)(Optional)

Gas Injection

3G mechanical options


Shutter option External mountAnode cooling

3G in 45⁰tilt position

3G with no shaft(customer weld)

Sputter chimney

3G mechanical options


• High yield (HY) type array available from 4”

• >40% target utilization

• Gencoa solution for precious material sputtering

Ta

rget

pro

file

,m

m

-60 -40 -20 0 20 40 60

4” high yield 10mm thick target erosion

Radial Position, mm

9

6

3 Ta

rget

pro

file

,m

m

3G high yield type magnetics for high target use

Magnetic material sputtering (high strength array)


• The cathodes allow magnetic material sputtering as standard with diaphragm cooled target.

• Thicker target can be sputtered using directly cooled target. (Pre- configured at factory)

• Anode height adjustable to accommodate different target thickness.

Size

Magnetic Strength on the target

surface (G)

Fe Thickness

(mm)

Ni Thickness

(mm)

50mm (2”)

780 1 3

75mm (3”)

840 1.5 4

100mm (4”)

620 0.5 2

Anode height line


• Extensive testing performed on 3G prototypes for product reliability and plasma stability

• Achieved 2 l/min water flow through the cathode at 1.5 bar pressure difference

• Operates across a wide range of pressures

• Coating uniformity & deposition rate measured for different target diameters

• Performance curves obtained at various pressure levels for various power modes



3G cathode testing

80

120

160

200

240

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

v

olt

ag

e, V

Pressure, Torr

2” Cu Target

RF 300W

RF 180W

300

350

400

450

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

vo

lta

ge,

V

Pressure, Torr

2” Cu target

DC 300W

DC 180W


10-6 to 10-2 operating pressure range (2” target diameter)


300

350

400

450

500

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

v

olt

ag

e, V

Pressure, Torr

3” Al target

DC 600W

DC 300W

300

350

400

450

500

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

vo

lta

ge,

V

Pressure, Torr

3” Cu target

DC 600W

DC 300W

10-6 to 10-2 operating pressure range (3” target diameter)

10-6 to 10-2 Operating Pressure Range (4” target diameter)


300

350

400

450

500

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

vo

lta

ge,

V

Pressure, Torr

4” Cu target

DC 600W

DC 300W

300

350

400

450

500

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

vo

lta

ge,

V

Pressure, Torr

4” high strength Cu target

DC 600W

DC 300W

300

350

400

450

500

550

600

650

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

vo

lta

ge,

V

Pressure, Torr

4” high yield Cu Target

DC 600W

DC 300W

Precious material sputtering (high yield array)


0

1

2

3

4

5

200

300

400

500

600

700

0 400 800 1200 1600

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

5.0E-4 Torr, DC powerAl target

Voltage

Current

Coating uniformity (2” target diameter)


0.2

0.3

0.4

0.5

-50 -30 -10 10 30 50

OD

Position, mm

DC Power 150mm T/S, Copper target

Range (mm) Uniformity

50 2.0%

30 0.9%

20 0.4%

Coating uniformity (2” target diameter)


0

0.2

0.4

0.6

0.8

1

1.2

-50 -40 -30 -20 -10 0 10 20 30 40 50

OD

Position (mm)

Normalised Uniformity over 100mm

50mm T/S

150mm T/S

100mm T/S

DC/RF uniformity comparison (3” target diameter)


Range, mmDC

Uniformity

50 ±4.4%

60 ±6.5%

70 ±8.4%

Range, mmRF

Uniformity

50 ±3.5%

60 ±5.7%

70 ±7.9%

Al target, DC 300W, 2.5 E-3 Torr

Al target, RF 300W, 2.5 E-3 Torr

0

0.2

0.4

0.6

0.8

1

1.2

-30 -20 -10 0 10 20 30

3" Al target @100mm T-S

RF

DC

DC/RF uniformity comparison (4” target diameter)


Range, mmDC

Uniformity

50 ±5.1%

60 ±7.2%

70 ±9.1%

Range, mmRF

Uniformity

50 ±5.2%

60 ±6.9%

70 ±9.1%

Cu target, DC 300W, 1.4 e-2Torr

Cu target, RF 300W, 1.4 e-2Torr

0

0.2

0.4

0.6

0.8

1

1.2

-40 -20 0 20 40

4" Cu Target @150mm T-S

DC

RF

Power Vs Voltage Vs Current (2” Cu target, DC power)


0

0.2

0.4

0.6

0.8

1

250

300

350

400

450

0 60 120 180 240 300

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

5E-4 Torr

0

0.2

0.4

0.6

0.8

1

250

300

350

400

450

0 60 120 180 240 300

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

2.5E-3 Torr

0

0.2

0.4

0.6

0.8

1

250

300

350

400

450

0 60 120 180 240 300

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

1.4E-2 Torr

Voltage

Current

Voltage

Current

Voltage

Current

Power Vs Voltage (2” target, RF Power)


50

90

130

170

50 100 150 200 250 300

DC

vo

lta

ge

, V

Forward power, W

Cu target

5.0E-4 Torr

2.5E-3 Torr

1.4E-2 Torr

250

300

350

400

450

500

550

600

50 100 150 200

DC

vo

lta

ge,

V

Forward power, W

RF power, 2.5E-3 Torr, fused silica target

Power Vs Voltage Vs Current (3” Al target, DC power)


0

0.4

0.8

1.2

1.6

2

220

270

320

370

420

470

0 120 240 360 480 600

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

5.0E-4 T orr,

0

0.4

0.8

1.2

1.6

2

220

270

320

370

420

470

0 120 240 360 480 600

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

2.5E-3 T orr,

Voltage

Current

Voltage

Current

0

0.4

0.8

1.2

1.6

2

220

270

320

370

420

470

0 120 240 360 480 600

Cu

rren

t, A

Vo

lta

ge,

V

Power, W

8.5E-3 Torr

Voltage

Current0

0.4

0.8

1.2

1.6

2

220

270

320

370

420

470

0 120 240 360 480 600

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

1.4E-2 Torr

Voltage

Current

Power Vs Voltage (3” target, RF power)


120

160

200

240

280

50 100 150 200 250 300

DC

vo

lta

ge,

V

Forward power, W

RF power, Al target

5.0E-4 Torr

2.5E-3 Torr

8.5E-3 Torr

1.4E-2 Torr

Power Vs Voltage Vs Current (4” Cu target, DC power)


0

0.5

1

1.5

2

2.5

3

250

300

350

400

450

500

550

0 200 400 600 800 1000 1200

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

1.4E-2 Torr

Voltage

Current

0

0.5

1

1.5

2

2.5

3

250

300

350

400

450

500

550

0 200 400 600 800 1000 1200

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

8.5E-3 Torr

Voltage

Current

0

0.5

1

1.5

2

2.5

3

250

300

350

400

450

500

550

0 200 400 600 800 1000 1200

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

2.5E-3 Torr

Voltage

Current

0

0.5

1

1.5

2

2.5

3

250

300

350

400

450

500

550

0 200 400 600 800 1000 1200

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

5.0E-4 Torr

Voltage

Current

Power Vs Voltage (4” target, RF power)


0

50

100

150

200

250

50 100 150 200 250 300

DC

vo

lta

ge,

V

Forward power, W

RF power, Cu target

5.0E-4 Torr 2.5E-3 Torr

8.5E-3 Torr 1.4E-2 Torr

3G Cu example deposition rates (100mm T-S)


TargetSize

Target Thickness (mm)

Power Mode

Power (W)

Deposition Rate (nm/min)

2” 3 DC 300 134

2” 3 RF 300 94.5

3” 6 DC 300 133

3” 6 RF 300 80

4” 6 DC 300 116

4” 6 RF 300 70

Gencoa 3G – No.1 choice for R&D Thin Film Technology


Gencoa 3G Advantages Competition

Lower Pressure Operation. 3G magnetrons can work down to e-6 Torr range

Most small size magnetrons work e-4 Torr range only

Small head size allows for smaller chambers or more sources within the same space

Larger heads require larger chambers

Magnetron head can be tilted 45 ⁰ with ease. No welded bellows and compact tilt height allows sources closer together in a cluster. The angle can be fixed accurately to 1 °.

Magnetrons are tilted using welded bellows which requires more chamber space and less accurate.

High Yield magnetics for 4” offering >40 % target use and recommended for precious metal sputtering

Not Available

Gas injection standard for all magnetrons Extra cost

DC, RF & HIPIMS compatible as standard Ordered as an option

Gencoa developed uniformity software to generate a coating uniformity direct from the magnetic field model and taking into account all system parameters

Not available

3G Cathode Summary

• Compact Size

• Wide range of working pressure range

• ± 45º tilt angle adjustment (1° accuracy)

• Standard target sizes

• High yield (HY) magnetics available for 4" and 5" target diameters

• Internal gas injection as standard

• DC,RF and HIPIMS ready

• Easy target change and choice of target thickness (1-6mm)

• High strength magnetics for sputtering of magnetic material

• Indirect or direct target cooling (pre-configured)


Gencoa cluster solution for R&D Market


IMC75• A powerful new tool for

thin film research.• Fits into the space of a

typical magnetron and has head tilt adjustment.

• Multiple uses - ion assistance, patterning, pre-cleaning, coating stripping, PECVD

• DC power technology for low cost of ownership.

• Dedicated Power supply with Gas regulation via automatic feedback control

FFE75• Dynamic plasma

movement for full face erosion

• Clean target for defect free layers

• High target use for precious metals

• Better Uniformity• Ideal for high cost

and compound targets.

• RF, HIPIMS and DC Option

• Tilt, shutter, Gas injection available

3G75• State of the

art design • Wide rang of

operating pressure

• Compact in size

• Various mechanical options possible.

• RF, HIPIMS and DC Option

Further information

For further information on the Gencoa range of 3G circular magnetrons, visit www.gencoa.com/3g-circular or email [email protected] to contact member of the sales team.


http://www.gencoa.com/3g-circular

mailto:[email protected]

gencoa 3g circular magnetron€¦ · gencoa 3g circular magnetron presenting gencoa’s 3rd...

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