gas-phase synthesis of nanoparticles, nanotubes, and...
TRANSCRIPT
GasGas--phase Synthesis of Nanoparticles, phase Synthesis of Nanoparticles, NanotubesNanotubes, and , and NanowiresNanowires
Stephen D. Tse and Bernard KearMechanical & Aerospace Engineering
Materials Science and EngineeringRutgers, the State University of New Jersey
Piscataway, NJ 08854
28 February 2008
Areas of DiscussionAreas of DiscussionFabricating nanoenergetic structures strategically so that the fundamental thermo-chemical-physical combustion mechanisms can be extracted and optimized– Directly compare nanomaterials with conventional materials
Overcoming processing difficulties to obtain desired particle size, surface characteristics, physical & chemical propertiesFundamental understanding of growth mechanisms– Reproducible products
Building in long-term passivation without losing faster reaction rate Eye towards mechanical propertiesScalability
Synthesis RoutesSynthesis RoutesGas-phase– Nanometric fuels (e.g. n-Al < 50nm)
Sol-Gel– Synthesizing/incorporating nanodimensional organic
and inorganic materials in a supporting gel (e.g. high degree of mixing and uniformity of Fe2O3/Al Nanocomposite)
Vacuum– Atomic layer deposition
Fundamental understanding and tailoring heat releaseConnecting with realistic reacting materials performance
Al-M
oO3
Al-C
uO
Al-W
O3
Al-F
e2O
3
Al-B
i2O
3
Al-M
nO2
Al-N
i
B-T
i
B-Z
r
Al-T
eflo
n
0
5
10
15
20
25
30
Hea
t Rel
ease
, ∆H
[kJ/
g]
Full OxidationThermite/Intermetallic Reaction
Some Reactive SystemsSome Reactive Systems
Why from GasWhy from Gas--Phase?Phase?Provides a cheap alternative to expensive vacuum synthesis techniques in thin or thick filmsMuch higher deposition rate as compared to vacuum techniques, enabling mass productionUsually a continuous process versus a batch process (e.g. liquid-based synthesis processes or milling processes)– Characteristics variations from batch to batch
Key AdvantageVery short process times and nanoscaled powders of high purity with a narrow particle size distribution
ConsiderationsConsiderationsParameters influencing the time-temperature history/profile during the synthesis process– Reaction temperature– Reaction pressure– Mass flows of reactants and carrier gas– Precursor material (e.g. of different
decomposition kinetics and reaction enthalpies)
– Method of precursor delivery– Type of carrier gas– Reactor geometry
Precursor
Plasma gas
Auxiliary gas
RF CoilEvaporationDissociationReactionCondensationNucleationQuenching
Cold Substrate
Synthesis Parameters• RF power• Gas (Ar, H2, N2, CH4)• Ambient pressure & gas• Mass flow rates
• Precursor loading• Substrate temperature• Substrate voltage bias• Substrate distance
In-Situ CharacterizationGas-Phase diagnostics• Temperature (SRS, FRS, OES. LIF)• Chemical species (SRS, LIF, OES)• Flow field velocity (PIV)
Particle diagnostics• Composition (LIBS)• Crystallinity (Raman)• Size/Distribution (LII)
Ex-Situ Powder Characterization• Phase & crystallinity (XRD)• Morphologies & primary particle size (TEM)• Aggregate particle size (DLS)
Computational ModelingGas-Phase phase• Temperature• Chemical species• Flow field velocity
Particle growth & transport• Sectional Model (precursor
decomposition, nucleation, surface growth, coagulation, coalescence)
• Aerosol dynamics
• Powder surface area (BET)• Particle size distribution (nano-SMPS)• Precursor conversion (TGA)
Correlation Correlation
Optimize Process
Predict & Guide Experiments
ValidationPrecursor
Plasma gas
Auxiliary gas
RF CoilEvaporationDissociationReactionCondensationNucleationQuenching
Cold Substrate
Synthesis Parameters• RF power• Gas (Ar, H2, N2, CH4)• Ambient pressure & gas• Mass flow rates
• Precursor loading• Substrate temperature• Substrate voltage bias• Substrate distance
In-Situ CharacterizationGas-Phase diagnostics• Temperature (SRS, FRS, OES. LIF)• Chemical species (SRS, LIF, OES)• Flow field velocity (PIV)
Particle diagnostics• Composition (LIBS)• Crystallinity (Raman)• Size/Distribution (LII)
Ex-Situ Powder Characterization• Phase & crystallinity (XRD)• Morphologies & primary particle size (TEM)• Aggregate particle size (DLS)
Computational ModelingGas-Phase phase• Temperature• Chemical species• Flow field velocity
Particle growth & transport• Sectional Model (precursor
decomposition, nucleation, surface growth, coagulation, coalescence)
• Aerosol dynamics
• Powder surface area (BET)• Particle size distribution (nano-SMPS)• Precursor conversion (TGA)
Correlation Correlation
Optimize Process
Predict & Guide Experiments
Validation
Research StrategyResearch Strategy
B
C N
BN
B4+δC
“C3N4”
B2CN2
BC2NBC4N BC3N
B4N
mol
-% B
mol-%
Bmol-% C
“C3N4” Cdiamond
c-BN
B4C
TiCSiC
Al2O3 TiNSi3N4
superhard
hard
hardness
B
C N
BN
B4+δC
“C3N4”
B2CN2
BC2NBC4N BC3N
B4N
mol
-% B
mol-%
Bmol-% C
B
C N
BN
B4+δC
“C3N4”
B2CN2
BC2NBC4N BC3N
B4N
mol
-% B
mol-%
Bmol-% C
“C3N4” Cdiamond
c-BN
B4C
TiCSiC
Al2O3 TiNSi3N4
superhard
hard
hardness
“C3N4” Cdiamond
c-BN
B4C
TiCSiC
Al2O3 TiNSi3N4
superhard
hard
hardness
Materials InvestigatedMaterials Investigated
cc--BN NanopowderBN Nanopowder
GaNGaN NanopowderNanopowder
10 20 30 40 50 60 70 80
2 Theta
GaN Ga (metal) Ga2O3
GaN: 72% Ga (metal): <15% Ga2O3: <10%
Morphologies of AluminumMorphologies of AluminumNot only particles but also wires/ribbons
Quasi 1Quasi 1--D Flame D Flame
Stagnation premixed flame
Flame
Flat Flame Burner
Cooling Water
Substrate
Plate ElectrodeDC High Voltage
(0 to +/- 10kV)
Premixed H2 + O2
&Precursor vapor + Carrier gas
Temperature
Atomic Structure of Single CrystalsAtomic Structure of Single Crystals
HRTEM image of TiO2 powder (-300V)
• Circles highlight individual primary particle fringes• Primary particle size ~ 5nm
5 nm
Nanoparticle FormationNanoparticle Formation
Characteristic CVD curves: film growth rate w as a function of inverse process temperature and precursor partial pressure
Dotted lines mark the cross over from film growth to particle formation
Diagnostic Facilities & SetupDiagnostic Facilities & Setup
Optics for Raman
Optics for LIF
RemovableMirror
Dye Laser
PMT
Balanced Photo Receiver for TDLAS
Monochrometerfor LIF
Nd:YAG Laser
External Cavity Diode Laser
CatalyticProbe
Spectrometerfor Raman
ICCD
MFCs
MFCs
Fuel + Inert
O2 + Inert
Detailed GasDetailed Gas--Phase ChemistryPhase Chemistry
Mueller, M.A., Kim, T.J., Yetter, R.A., and Dryer, F.L., Int. J. Chem. Kinet. 31:113-125 (1999)
Flame ModelFlame ModelSandia SPIN code (Kee)Chemical mechanism from Mueller, M.A., Kim, T.J., Yetter, R.A., and Dryer, F.L., Int. J. Chem. Kinet. 31:113-125 (1999)Transport properties computed with CHEMKIN subroutinesSurface reactions set such that H, O, OH, and HO2recombine with unit sticking probability at substrateBoundary conditions at burner specify inlet mass flux and temperatureBoundary conditions at substrate incorporate no-slip condition and constant surface temperature
Laser Induced FluorescenceLaser Induced Fluorescence
OH OH VibrationalVibrational TransitionsTransitions
OH LaserOH Laser--Induced Fluorescence Induced Fluorescence Tunable Dye LaserM
M
BS
Photo-diode
Monochromator
L
BeamDump
x
yz
3-D translationCVD Chamber
with optical access
Pumpingbeam
Excitingbeam
ND2x Nd:YAG Laser
PinholeFilter
ComputerDigitalOscilloscope
PMT
• Relative OH profile: Q1(7)• Two-line temperature: P2(7) and P2(9) of the (1-0) band excited
0
500
1000
1500
2000
2500
0 0.5 1 1.5 2 2.5 3 3.5 4Substrate-Burner gap (cm)
Tem
pera
ture
(K)
pressure 20 torrpressure 40 torr
Axial Temperature Profile Axial Temperature Profile
• Constant mass flow rate
burnersubstrate
0
0.005
0.01
0.015
0.02
0.025
0.03
0 0.5 1 1.5 2 2.5 3 3.5 4Substrate-Burner gap (cm)
OH
mol
e fra
ctio
n
20torr40torr
Axial OH Profile Axial OH Profile
• Constant mass flow rate
burnersubstrate
1st stage N2 Dilution
PressureGauge
Excess Exhaust
3rd stage N2 Dilution
2nd stage N2 Dilution
Aerosol Storage Chamber
DMACPC
Low-Pressure Synthesis Chamber
Vacuum Pump
Premixed H2 + O2& Precursor Vapor + Carrier Gas
Cooling WaterCooling Water
Flat Flame Burner
Substrate
Computer
Valve 1
Valve 3
Val
ve 2
MFC
MFC
MFC
Bypass
Aerosol Sampling into Aerosol Sampling into nanonano--SMPS SMPS
Particle Growth Modeling Particle Growth Modeling Sectional Model: particle size distribution discretized into different volume sections which are evenly spaced on a lognormal size scale. All particles belonging to a section are supposed to be of the same size (zeroth order) as opposed to higher order sectional methods.
GDE:
surf
k
coal
k
coag
k
nucl
k
decomp
kk
dtdN
dtdN
dtdN
dtdN
dtdN
dtdN
++++=
Quasi 1Quasi 1--D Flame D Flame
Counterflow diffusion flame
Raman ScatteringRaman Scattering
VibrationalVibrational Raman SpectraRaman Spectra
NN22 VibrationalVibrational QQ--Branch Raman Branch Raman SpectrumSpectrum
Spontaneous Raman Spectroscopy Spontaneous Raman Spectroscopy 2x Nd:YAG LaserPulse-Stretcher
M
M
BSPowerMeter
Image Rotator
ICCD Camera
Prism
ImagingSpectrometer
L
L
Raman Notch FilterAchromats
BeamDump
Retroreflector
x
yz
3-D translation
CVD Chamber with optical access
Delay/GateGenerator
Computer
beam
Flame Structure Validation (Raman)Flame Structure Validation (Raman)
Temperature & major species With correction from interference from C-containing radicals
0. 00%
10. 00%
20. 00%
30. 00%
40. 00%
50. 00%
60. 00%
-0. 6 -0. 3 0 0. 3 0. 6 0. 9posi t i on/mm
0
500
1000
1500
2000
2500O2
CH4
H20
H2
Sum/4
T
0. 00%
2. 00%
4. 00%
6. 00%
8. 00%
10. 00%
12. 00%
-0. 6 - 0. 3 0 0. 3 0. 6 0. 9posi t i on/mm
CO2
CO
C2H2
Tungsten Oxide Tungsten Oxide
Our Synthesis MethodOur Synthesis MethodFlame synthesis is employed to grow well-aligned, single-crystal nanowires with:– diameters ranging from 20-50nm– coverage density of 109-1010cm-2
– growth rates of microns per minute– no pretreatment or catalysts– in open environments
Method is also robust in that the combustion process inherently provides for:– an elevated enthalpy source to evaporate the metal substrate
atoms,– the gas-phase chemical species (e.g. oxidizer, water vapor,
hydrogen, carbon dioxide) to produce the requisite oxide,– a favorable temperature gradient for growth of the nanowires
ScalabilitySelf-gettering
Aligned Aligned NanowiresNanowires
Dense yield of nanomaterials grown directly on a tungsten substrateDiameters of 20-50nm, lengths > 10µm, 10min sampling durationEDX tungsten oxide
TEM of Tungsten Oxide (WOTEM of Tungsten Oxide (WO2.92.9) )
20 nm
Different crystal structures include: cubic and monoclinic WO3, tetragonal WO2.9, and monoclinic W18O49Indexed SAED pattern with the first three highest intensities of 3.779Å, 3.126Å, and 2.67Å match very well with the tetragonal phase of WO2.9 with lattice constants of a = 5.3Å, b = 5.3Å, and c = 3.83Å (PDF card #18-1417)d-spacings correspond to {110}, {101}, and {200}, respectively
10 nm
0.378 nm
[110]
CrystallinityCrystallinity
Dislocation-free, single-crystalline2-D Fourier transform pattern gives average spacing for lattice planes of 3.78Å, which corresponds to the reflections from d-spacings of (110) planes of the tetragonal WO2.9 phase Preferable growth along the [110] direction
Growth Mechanism Growth Mechanism
Growth appears to be by vapor-solid (VS) mechanism– no metal nanoparticle at its tip (VLS)– thickening by a ledge-growth mechanism
20 nm
(b) (a)
–10 V applied
Voltage Bias on Substrate Voltage Bias on Substrate
–100 V applied
Minimizing electrostatic energy coming from ionic charges on the polar surfaces?
Other Metal OxidesOther Metal OxidesCuO nano- wires and ribbons
Fe2O3 nanowires Fe2O3 nano- wires and ribbons.
(a) (b) (c) (d) (e) (f)
(g) (h) (i) (j) (k) (l)
(m) (n) (o) (p) (q) (r)
Various MorphologiesVarious Morphologies
Encapsulating Reactive Nanoparticles in Encapsulating Reactive Nanoparticles in Carbon Carbon NanotubesNanotubes
Inert Co-flow
Premixed Flame
{Spinel Substrate}
Fuel + Oxygen + InertΦ > 1
Aero-dynamic
Jet
[Alloy Substrate]
CNTsCNTs
Inert Co-flow
Premixed Flame
{Spinel Substrate}
Fuel + Oxygen + InertΦ > 1
Aero-dynamic
Jet
[Alloy Substrate]
CNTsCNTs
Nan
opar
ticle
s en
caps
ulat
ed in
gro
win
g ca
rbon
nan
otub
e
Very WellVery Well--Aligned Aligned CNTsCNTs from Ni/Tifrom Ni/Ti
Online Feedback Control Online Feedback Control Laser Induced Breakdown Spectroscopy (LIBS)Raman of nanoparticles during synthesis
0. 00E+001. 00E+042. 00E+043. 00E+044. 00E+045. 00E+046. 00E+047. 00E+048. 00E+04
100 200 300 400 500 600 700
InIn--situ Raman of situ Raman of NanopowdersNanopowders
0. 00E+001. 00E+042. 00E+043. 00E+044. 00E+045. 00E+046. 00E+047. 00E+048. 00E+04
100 200 300 400 500 600 700