GAAS®2005Conference Proceedings

13th EuropeanArsenide and Other Compound

Semiconductors ApplicationSymposium

Monday 3rd &Tuesday 4th October 2005

Horizon House Publications - Ltd46 Gillingham StreetLondon SW1V1HH

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GAAS Plenary Opening Session

Carbon Nanotubes for RF and Microwaves 1P.J. Burke, Z. Yu, C. Rutherglen, University of California at Irvine, USA

An Overview of Microwave Component Requirements for Future Space Applications 5A.R. Barnes, A. Boetti, L. Marchand, J. Hopkins, European Space Agency, The Netherlands

GAAS Plenary Session

Are We There Yet ? — A Metamorphic HEMT and HBT Perspective 13Geok Ing Ng, K. Radhakrishnan, Hong Wang, Nanyang Technological University, Singapore

Status of AIGaN/GaN HEMT Technology — A UCSB Perspective 21Umesh K. Mishra, University of California at Santa Barbara, USAEnabling RFCMOS Solutions for Emerging Advanced Applications 29John J. Pekarik, Douglas D. Coolbaugh, Peter E. Cottrell, Sebastian M. Csutak, David R. Greenberg,Basanth Jagannathan, David I. Sanderson, Lawrence Wagner, Joseph Walko, Xudong Wang, JosefWatts, IBM, USA

Session: GAAS01 - ORALPHEMT and HBT Power Amplifiers

A Cost-Effective 10 Watt X-Band High Power Amplifier and 1 Watt Driver Amplifier Chip-Set 37A.P. de Hek, G. van der Bent, M. van Wanum, F.E. van Vliet, TNO, The NetherlandsCompact and Broadband Microstrip Power Amplifier MMIC with 400-mW Output PowerUsing 0.15-jumGaAsPHEMTs 41A. Bessemoulin1, Simon Mahon, Anna Dadello, G. McCulloch, James T. Harvey; yMimix Broadband,AustraliaA High-Efficiency HBT-Based Class-E Power Amplifier for 2 GHz 45Dusan Milosevic, Johan van der Tang, Arthur van Roermund, Eindhoven University of Technology,The NetherlandsA 3.2 W Coplanar Single-Device X-Band Amplifier with GaAs HBT 49F. Lenk, H. Klockenhoff, P. Kurpas, A. Maafcdorf, H.J. Wiirfl, W. Heinrich, FBH, GermanyInvestigation of IMD Asymmetry in Microwave FETs via Volterra Series 53Paolo Colantonio, Franco Giannini, Ernesto Limiti, Antonio Nanni, Universita di Roma "TorVergata", Italy

Session: GAAS02 - ORALMicrowave Integrated Mixers

A 122 GHz SiGe Active Subharmonic Mixer 57A. Muller, M. Thiel, H. Irion, H.-O. Ruofc, Robert Bosch GmbH, Germany

Highly Linear 20 GHz-Micromixer in SiGe Bipolar Technology 61M.N. Do1, David Dubuc, A. Coustou, E. Tournier, P. Ancey, Robert Plana; lLAAS, France

A 17 to 26 GHz Micromixer in SiGe BiCMOS Technology 65Mingquan Bao, Yinggang Li, Ericsson AB, Sweden

A Power Efficient Active K Band Mixer 69Meik Huber, Stefan von der Mark, Georg Boeck, Technische Universitdt Berlin, Germany

A Ultra Low-Power Highly-Linear HITD Based Down-Converter for K Band Applications 73/. Magrini, M. Camprini, A. Cidronali, G. Collodi, G. Manes, Universita di Firenze, Italy

Session: GAAS03 - ORALLow Noise and Broadband Amplifiers

High Gain 110-GHz Low Noise Amplifier MMICs Using 120-nm Metamorphic HEMTs andCoplanar Waveguides 77A. Bessemoulin1, P. Fellon, J. Gruenenpuett, H. Massler, W. Reinert, E. Kohn, A. Tessmann;l UnitedMonolithic Semiconductors, FranceImproved Technique for Reflection Performances in Broadband Variable Gain Low NoiseAmplifiers 81Munenari Kawashima, Tadao Nakagawa, Yo Yamaguchi, Katsuhiko Araki, NTT Corporation, Japan10 Gbit/s Differential Amplifier Demonstrating Striplines in 0.18/um CMOS Technology 85B. Milivojevic, Z. Gu, A. Thiede, University of Paderborn, GermanyLow Noise and High Linearity LNA Based on InGaP/GaAs HBT for 5.3 GHz WLAN 89Seong-Sik Myoungl, Sang-Hoon Cheon, Jong-Gwan Yook;x Yonsei University, KoreaA Metamorphic GaAs HEMT Distributed Amplifier with 50 GHz Bandwidth and Low Noise for40 Gbits/s Optical Receivers 93G. Wolf1, S. Demichel, R. Leblanc, F. Blache, R. Lefevre, G. Dambhne, H. Happy; lIEMN, France

Session: GAAS04 - ORALNanodevices for RF Applications

High Frequency Low Noise Potentialities of Down to 65nm Technology Nodes MOSFETs 97G. Dambrine1, Daniel Gloria, P. Scheer, C. Raynaud, F. Danneville, S. Lepilliet, A. Siligaris, G.Pailloncy, B. Martineau, E. Bouhana, R. Valentin; lIEMN, FrancePartially Depleted CMOS SOI Technology for Low Power RF Applications 101Carlo Tinellal, Frederic Gianesello, Daniel Gloria, C. Raynaud, P. Delatte, A. Engelstein, J.M.Fournier, Ph. Benech, J. Jomaah;' STMicroelectronics, FranceCMOS Devices and Circuits for Microwave and Millimetre Wave Applications 105M. Ferndahl1, B.M. Motlagh, A. Masud, 1. Angelov, H.-O. Vickes, Herbert Zirath;l ChalmersUniversity of Technology, SwedenWideband Characterization and Simulation of Advanced MOS Devices for RF Applications 109Jean-Pierre Raskin, Universite Cathoiique de Louvain, Belgium

Session: GAAS05 - ORALPhotonic Devices and Circuits

Frequency Response Enhancement of a Single Strained Layer SiGe Phototransistor Based onPhysical Simulations 113F. Moutier1, J.L. Polleux, C. Rumelhard, Hermann Schumacher;l ESYCOM, FranceDetection and Mixing of Two Modulated Optical Signals Using Only a Single GaAs FET(Experimental Study) 117L.A. Perez-Perez, J.A. Reynoso-Herndndez, J.R. Loo-Yau, G. Soberanes-Flores, H. Ascencio-Ramirez,R. Rangel-Rojo, CICESE, MexicoDesign and Fabrication of Short Gate-Length Heterostructure Charge Coupled Devices forTransversal Filter Applications 121Hiang Teik Tan1, Ian C. Hunter, Christopher M. Snowden, Richard Ranson;x University of Leeds, U.K.Electromagnetic Modeling and Characterization of an Optically-Controlled Microwave PhaseShifter in GaAs Integrated Technology 125C. Tripon-Canseliet1, S. Faci, F. Deshours, C. Algani, G. Alquie, S. Formont, J. Chazelas;l LISIF,FranceHigh Efficiency lOGb/s Optical Modulator Driver Amplifier Using a Power pHEMTTechnology 129J. Shohat1, ID. Robertson, S.J. Nightingale;l University of Leeds, U.K.

Session: GAAS06 - ORALHigh Frequency and Power Technologies

A GaAsSb/InP HBT Circuit Technology 133J. Godin[, M. Riet, A. Konczykowska, P. Berdaguer, M. Kahn, P. Bove, H. Larheche, R. Longer, M.Lijadi, F. Pardo, N. Bardou, J.-L. Pelouard, C. Maneux, M. Belhaj, B. Grandchamp, N. Labat, A.Touboul, C. Bru-Chevallier, H. Chouaib, T. Benyattou;l Alcatel-Thales III-V Lab, France

InP DHBT-Based IC Technology for High-Speed Data Communications 137R. Driad, K. Schneider, R.E. Makon, M. Lang, U. Nowotny, R. Aidam, R. Quay, M. Schlechtweg, M.Mikulla, G. Weimann, Fraunhofer IAF, GermanyInP/GaAsSb/InP DHBT Monolithic Transimpedance Amplifier with Large Dynamic Range 141Xin Zhu1, Jing Wang, Dimitris Pavlidis, Shuohung Hsu;L University of Michigan, USA

Thermal Design of Power GaN FETs in Microstrip and Coplanar MMICs 145A. Angelini, M. Furno, F. Cappelluti, F. Bonani, M. Pirola, G. Ghione, Politecnico di Torino, Italy

Analysis of Buffer-Trapping Effects on Current Reduction and Pulsed /-VCurves of GaN FETs 149H. Takayanagi, H. Nakano, K. Horio, Shibaura Institute of Technology, Japan

Session: GAAS07 - ORALProcess Optimization for Enhanced Device Performance

Power Gain Analysis of SiGe HBTs with Constant Ge Strain 153Ningyue Jiang, Zhenqiang Ma, University of Wisconsin-Madison, USA

Novel Base Doping Profile for Improved Speed and Power 157EM. Rehder1, C. Cismaru, P.J. Zampardi, R.E. Welser; lKopin Corp., USA

RF Characteristics of BJT Devices with Selectively or Fully Ion-Implanted Collector 161C.C. Meng1, J.Y. Su, B.C. Tsou, G.W. Huang;{National Chiao Tung University, Taiwan

A W-Band MMIC Amplifier Using 70-nm Gate Length InP HEMT Technology 165Mikael Malmkvist, Anders Mellberg, Jan Grahn, Chalmers University of Technology, Sweden

Extremely High Gate Turn-On Voltage of GaAs Double Camel-like Gate Field-EffectTransistor 169Jung-Hui Tsai, Yu-Chi Kang, National Kaohsiung Normal University, Taiwan

Session: GAAS08 - ORAL3D MCM Modules for Space Applications

3D Packaging for Space Application: Imagination and Reality 173Philippe Monfraix, Claude Drevon, Chloe Schaffauser, Mathieu Paillard, Olivier Vendier, Jean-LouisCazaux, Alcatel Alenia Space, FranceAdvanced Multi Chip Module Solutions for RF and Digital Space Applications: Status andPerspective 177Massimo Claudio Comparini, U. Di Marcantonio, M. Feudale, V. Piloni, A. Suriani, Alenia Spazio, ItalyImpact of RFIC Integration of System and Subsystem Blocks on MCM Solutions 181Ronald E. Reedy1, Massimo Claudio Comparini;' Peregrine Semiconductor, USA

Session: GAAS09 - ORALLarge-Signal Modelling and Characterization : from Systems to Devices

Large-Signal Behavioral Model of a Packaged RF Amplifier Based on QPSK-Like MultisineMeasurements 185Maciej Myslinski1, Dominique Schreurs, Kate A. Remley, Michael D. McKinley, Bart Nauwelaers;1 Katholieke Universiteit Leuven, BelgiumTime-Domain Neural Network Characterization for Dynamic Behavioral Models of PowerAmplifiers 189G. Orengol, Paolo Colantonio, A. Serino, Franco Giannini, G. Ghione, M. Pirola, G. Stegmayer;1 Universita di Roma "Tor Vergata", ItalySystem-Level Simulation of a Noisy Phase-Locked Loop 193Frank Herzel, Maxim Piz, IHP, Germany

A Simple Technique for Measuring the Thermal Impedance and the Thermal Resistance ofHBTs 197J.A. Lonac, A. Santarelli, I. Melczarsky, F. Filicori, Universita di Bologna, ItalySimplified Validation of Non-Linear Models for Micro- and Millimeter-Wave Electron Devices 201A. Raffol, A. Santarelli, P.A. Traverso, G. Vannini, F. Filicori;l Universita di Ferrara, Italy

Session: GAAS 10 - ORALDevice Optimization : Measurement, Extraction and Modelling

InGaP/GaAs/AlGaAs Power DHBT with Enhanced Linearity Near Saturation Region 205Tohru Oka, Koichiro Fujita, Masaharu Yamashita, John K. Twynam, Keiichi Sakuno, SharpCorporation, JapanThermal Characterisation and Analysis of Two Tone Intermodulation Distortion inInGaP/GaAs DHBT 209A. Khan, C.N. Dharmasiri, T. Miura, A.A. Rezazadeh, University of Manchester, U.K.Extraction of Small Signal Equivalent Circuit Model Parameters for Statistical Modeling ofHBT Using Artificial Neural 213H. Taher, Dominique Schreurs, Bart Nauwelaers, Katholieke Universiteit Leuven, BelgiumA Measurement System for FET Derivative Extraction Under Dynamic Operating Regime 217R. Pena, C. Gomez, J.A. Garcia, Universidad de Cantabria, SpainAnalysis of Device Scaling Towards the Performance Enhancement of Si-MOSFET RFAmplifiers 221Padmanava Sen1, Nuttapong Srirattana, Arvind Raghavan, Joy Laskar;1 Georgia Institute ofTechnology, USA

Session: GAAS11 - ORALGaN Circuits for Low Noise and Power Application

A Wideband Balanced AlGaN/GaN HEMT MMIC Low Noise Amplifier for TransceiverFront-Ends 225Sanghyun Seol, Dimitris Pavlidis, Jeong-Sun Moon;: University of Michigan, USANoise Assessment of AlGaN/GaN HEMTs on Si or SiC Substrates: Application to X-Band LowNoise Amplifiers 229J.C. De Jaeger1, S.L. Delage, G. Dambrine, M.A. Di Forte Poisson, V. Hoel, S. Lepilliet, B. Grimbert, E.Morvan, Yves Mancuso, G. Gauthier, A. Lefrancois, Y. Cordier; lIEMN, FranceA Microstrip X-Band AlGaN/GaN Power Amplifier MMIC on s.i. SiC Substrate 233F. van Raay, R. Quay, R. Kiefer, W. Fehrenbach, W. Bronner, M. Kuri, F. Benkhelifa, H. Massler, S.Miiller, M. Mikulla, M. Schlechtweg, G. Weimann, Fraunhofer IAF, GermanyKa-Band AlGaN/GaN HEMT High Power and Driver Amplifier MMICs 237M. van Heijningenl, F.E. van Vliet, R. Quay, F. van Raay, R. Kiefer, S. Miiller, D. Krausse, M.Seelmann-Eggebert, M. Mikulla, M. Schlechtweg;l TNO, The NetherlandsS and C Band over 100W GaN HEMT 1 Chip High Power Amplifiers with Cell DivisionConfiguration 241Koji Yamanaka, Kazuhiro Iyomasa, Hiroshi Ohtsuka, Masatoshi Nakayama, Yoshinori Tsuyama,Tetsuo Kunii, Yoshitaka Kamo, Tadashi Takagi, Mitsubishi Electric Corporation, Japan

Session: GAAS12 - ORALHigh Speed, Microwave and Millimeter-wave Circuits and Sources

Digital SiGe-Chips for Data Transmission up to 85 Gbit/s 245O. Wohlgemuth, W. Miiller, P. Paschke, T. Link, R. Lederer, B. Kolb, H. Dotzauer, Lucent Technologies,Germany

A Fully Integrated SiGe Low Phase Noise Push-Push VCO for 82 GHz 249Robert Wanner1, Herbert Schdfer, Rudolf Lachner, Gerhard R. Olbrich, Peter Russer;l TechnischeUniversitdt Munchen, GermanyA High Purity 60 GHz-Band Single Chip x8 Multiplier with Low Phase Noise 253Camilla Kdrnfelt, Rumen Kozhuharov, Herbert Zirath, Chalmers University of Technology, SwedenA Low-Noise X Band Microstrip VCO with 2.5 GHz Tuning Range Using a GaN-on-SiC p-HEMT 257A.P.M. Maas, F.E. van Wet, TNO, The NetherlandsA Dual Band (10/16 GHz) p-HEMT VCO 261Vikas Manan, Stephen I. Lona. University nf California nt <tnntn Rnrhnm

Session: GAAS 13 - ORALReliability of Emerging Technologies for Microwave Applications

AlGaN/GaN High Electron Mobility Transistor (HEMT) Reliability 265Dimitris Pavlidisl, Pouya Valizadeh, Shuohung Hsu; lTechnische Universitdt Darmstadt, Germany

Reliability of RF-MEMS 269Roberto Gaddi1, Antonio Gnudi, Augusto Tazzoli, Gaudenzio Meneghesso, Enrico Zanoni;1 Universita di Bologna, Italy

ESD Characteristics of GaAs versus Silicon Diode 273Changkun Parkl, Seok-Oh Yun, Jeonghu Han, Sang-Hoon Cheon, Jae-Woo Park, Songcheol Hong;1KAIST, Korea

Low Frequency and Linear High Frequency Noise Performances of AlGaN/GaN Grown on SiCSubstrate 277J.-G. Tartarin1, G. Soubercaze-Pun, Laurent Bary, C. Chambon, S. Gribaldo, O. Llopis, L. Escotte,Robert Plana, S.L Delage, C. Gaquiere, J. Graffeuil; lLAAS, France

On-State Safe Operating Area of GaAs MESFET Defined for Non Linear Applications 281N. Ismail1, N. Malbert, N. Labat, A. Touboul, J.-L. Muraro, F. Brasseau, D. Langrez; lIXL, France

Session: GAAS 14 - ORALMEMS over IC for Intelligent Front End

Main Achievements to Date Toward the Use of RF MEMS into Space Satellite Payloads 285Olivier Vendier, Mathieu Paillard, H. Legay, Chloe Schaffauser, S. Forrestier, G. Caille, ClaudeDrevon, Jean-Louis Cazaux, Alcatel Alenia Space, FranceRF-MEMS Switches Based on a Low-Complexity Technology and Related Aspects of MMICIntegration 289V. Ziegler1, C. Siegel, B. Schonlinner, U. Prechtel, Hermann Schumacher;l FADS Deutschland GmbH,GermanyIC Compatible MEMS Technology 293Katia Grenier1, L. Mazenq, David Dubuc, Fouad Bouchriha, F. Coccetti, Erik Ojefors, Peter Lindberg,Anders Rydberg, J. Berntgen, W.J. Rabe, Ertugrul Sonmez, P. Abele, Hermann Schumacher, RobertPlana;1LAAS, France

Integration Aspects of RF-MEMS Technologies 297T. Lisec, B. Wagner, Fraunhofer ISIT, Germany

Session: GAAS15 - ORALNon-linear Modelling of Silicon and III-V FETS

A New Non-Quasi-Static Non-Linear MOSFET Model Based on Physical Analysis 301Darren R. Burke, Thomas J. Brazil, University College Dublin, Ireland

A Simple Non-Quasi-Static Non-Linear Model of Electron Devices 305A. Santarelli', V. Di Giacomo, A. Raffo, P.A. Traverso, G. Vannini, F. Filicori, V.A. Monaco;1 Universita di Bologna, ItalyOn the Large-Signal Modelling of AlGaN/GaN HEMTs and SiC MESFETs 309/. Angelov, V. Desmaris, K. Dynefors, P.A. Nilsson, N. Rorsman, Herbert Zirath, Chalmers Universityof Technology, SwedenAn Empirical Large Signal Model for Silicon Carbide MESFETs 313Ahmed Saved, Georg Boeck, Technische Universitdt Berlin, Germany

Advanced Meander Gate p-HEMT Model for Accurate Harmonic Modeling of Switch MMICDesigns 317M.A. Holm, D.M. Brookbanks, Filtronic Compound Semiconductor Ltd., U.K.

Session: GAAS 16 - ORALPA and TRX Characterisation, Modelling, and Design within the NoE TARGET

Comparison of Load-Pull Measurement Results of a 4W pHEMT Involving Five EuropeanLaboratories 321Jonathan Lees1, Johannes Benedikt, Bernd Bunz, C. Gaquiere, Damien Ducatteau, E.Marquez-Segura, T.M. Martin-Guerrero, Alain Bare!;l Cardiff University, U.K.Measuring and Modelling a Microwave Amplifier by Means of the LSNA 325Wendy Van Moer, Yves Rolain, Alain Bare!, Vrije Universiteit Brussel, BelgiumHigh Frequency Class E Design Methodologies 329Paolo Colantonio1, Franco Giannini, R. Giofre, M.A. Yarleque Medina, Dominique Schreurs, BartNauwelaers;l Universita di Roma "Tor Vergata", ItalyTX System-Level Analysis by Behavioral Modeling of RF Building Blocks: The IEEE802.1 laand IEEE802.15.3a Case Studies 333A. Cidronali1, M. Camprini, I. Magrini, E. Bertran, Nikolaos C. Athanasopoulos, R. Makri, R. Cignani,G. Vannini, J. Portilla, P. Casas, K. Vryssas, A. Samelis, G. Manes;l Universita di Firenze, ItalyDevelopments in Predistortion and Feedforward Adaptive Power Amplifier linearisers 337M. O'Droma1, E. Bertran, M. Gadringer, S. Donati, A. Zhu, P.L. Gilabert, J. Portilla;l University ofLimerick, Ireland

Session: GAAS 17 - ORALMonolithic Millimeter-wave Integrated Circuits

A Monolithic Integrated 180 GHz SiGe HBT Push-Push Oscillator 341P. Roux1, Y. Baeyens, O. Wohlgemuth, Y.K. Chen;l Lucent Technologies, FranceA GaAs Distributed Amplifier with an Output Voltage of 8.5VPP for 40 Gb/s Modulators 345M. Hafele1, Andreas Trasser, K. Beilenhoff, Hermann Schumacher;' University of Ulm, GermanyA Millimeter-Wave Ultra-Compact Broadband Diode Mixer Using Modified Marchand Balun 349Pei-Si Wul, Chin-Shen Lin, Tian-Wei Huang, Huei Wang, Yu-Chi Wang, Chan-Shin Wu;lNationalTaiwan University, TaiwanA Comparative Study of Active and Passive GaAs Microwave Couplers 353L. Krishnamurthy, Q. Sun, V.T. Vo, G. Parkinson, D.K. Paul, K. Williams, A.A. Rezazadeh, Universityof Manchester, U.K.Compact W-Band SPQT MMIC Switch Using Traveling Wave Concept 357Shih-Fong Chao, Zuo-Min Tsai, Kun-You Lin, Huei Wang, National Taiwan University, Taiwan

Session: GAAS 18 - ORALHi-Nitrides : From Basics to Applications

KORRIGAN — A Comprehensive Initiative for GaN HEMT Technology in Europe 361G. Gauthier1, Yves Mancuso, F. Murgadella;' Thales Airborne Systems, FranceGaN H-FET Development at QinetiQ 365Trevor Martin1, Michael J. Uren, Richard S. Balmer, D. Soley, D.J. Wallis, Keith P. Hilton, J.O.Maclean, A.G. Munday, A.J. Hydes, D.G. Hayes, C.H. Oxley, P. McGovern, Paul J. Tasker;' QinetiQLtd., U.K.Progress in Microwave GaN HEMT Grown by MBE on Silicon and Smart Cut TM EngineeredSubstrates for High Power Applications 369II. Larheche1, B. Faure, C. Richtarch, F. Letertre, R. Langer, P. Bove; lPicogiga International, FranceHigh Power/High Bandwidth GaN MMICs and Hybrid Amplifiers: Design andCharacterization 373F. van Raay, R. Quay, R. Kiefer, H. Walcher, O. Kappeler, M. Seelmann-Eggebert, S. Muller, M.Schlechtweg, G. Weimann, Fraunhofer IAF, GermanyGaN-Based FETs for Microwave High-Power Applications 377Hidenori Shimawaki, Hironobu Miyamoto, R&D Association for Future Electron Devices, Japan

GAAS Poster SessionVerification of a Frequency Dispersion Model in the Performance of a GaAs pHEMTTravelling-Wave MMIC 381/. Kallfass1, C. Zhang, J. Grunenpiitt, C. Teyssandier, Hermann Schumacher;l University of Ulm,GermanyNonlinear Model of Epitaxial Layer Resistor on GaAs Substrate 385Yu Zhu, Cejun Wei, Oleksiy Klimashov, Cindy Zhang, Yevgeniy Tkachenko, Skyworks Solution Inc.,USAAccurate Temperature Dependent Noise Models of Microwave Transistors Based on NeuralNetworks 389Zlatica Marinkovic, Vera Markovic, University ofNis, Serbia and Montenegro

Uncertainty Estimation in SiGe HBT Small-Signal Modeling 393Syed M. Masood, Tom K. Johansen, Jens Vidkjazr, Viktor Krozer, Technical University of Denmark,DenmarkElectro-Thermal Model Extraction for MMIC Power Amplifiers 397German Torregrosa-Penalva', Alberto Asensio Lopez, Alvaro Blanco-del-Campo;' UniversidadMiguel Hernandez, SpainComparison Between Equivalent-Circuit and Black-Box Non-Linear Models for MicrowaveElectron Devices 401A. Raffo1, J.A. Lonac, S. Menghi, R. Cignani;' Universita di Ferrara, Italy

Modeling, Analysis and Classification of a PA Based on Identified Volterra Kernels 405D. Silveira, M. Gadringer, H. Arthaber, M.L. Mayer, G. Magerl, Vienna University of Technology,AustriaNovel SPICE Macro Modeling for an Integrated Si Schottky Barrier Diode 409Janam Kul, Younghoon Min, Donghyun Lee, lljong Song, Dongsig Shim, Namkyoung Lee,Seonghearn Lee, Yongtaek Lee, Munsung Choi, Jonghyck Kim;v Samsung Advanced Institute ofTechnology, KoreaA Novel Closed-Form Approach for Comparing the Q-Factor Responses Between theAsymmetric and Symmetric On-Chip Inductors 413T.S. Horng, C.H. Huang, F.Y. Han, C.J. Li, National Sun Yat-Sen University, TaiwanDynamics of Electric Field Screening in Photoconductive THz Sources with SpatiallyPatterned Excitation 417Dae Sin Kim1, D.S. Citrin;1 Georgia Institute of Technology, USAInP/InGaAs Resonant Tunneling Diode with Six-Route Negative Differential Resistances 421Jung-Hui Tsai1, Yu-Chi Kang, Wen-Shiung Lour;l National Kaohsiung Normal University, TaiwanElectrical and Structural Properties of Low-Temperature-Grown Ino.53Gao.47As on GaAs Usingan InGaAlAs Metamorphic Buffer 425Seong June Jo', Soo-Ghang Ihn, Tae-Woo Kim, Ki-Ju Yee, Moon-Seop Hwang, Dong-Han Lee, Jong-InSong;l GIST, KoreaAdvanced Manufacturing Techniques for Next Generation Power FET Technology 429M.C. Clausen, J. McMonagle, Filtronic Compound Semiconductors, U.K.

A Comprehensive Class A to B Power and Load-Pull Characterization of GaN HEMTs on SiCand Sapphire Substrates 433V. Camarchia1, S. Donati Guerrieri, M. Pirola, V. Teppati, G. Ghione, M. Peroni, C. Lanzieri;lPolitecnico di Torino, ItalyA 38-48-GHz Miniature MMIC Subharmonic Mixer 437Wei-Chien Chen, Shih-Yu Chen, Jeng-Han Tsai, Tian-Wei Huang, Huei Wang, National TaiwanUniversity, TaiwanA V Band Singly Balanced Diode Mixer for Space Application 441C. Florian', F. Scappaviva, M. Feudale, V.A. Monaco, F. Filicori;' Universita di Bologna, Italy

Implementation of Non-Conventional Nonlinear Models for Electron Devices in CommercialCAD Tools 445D. Resca1, R. Cignani, A. Raffo, A. Santarelli, G. Vannini;' Universita di Bologna, ItalyFrequency Domain-Based Extraction Method of One-Port Device's Non-Linear State Functionsfrom Large-Signal Measurements 449T.M. Martin-Guerrero, C. Camacho-Penalosa, Universidad de Malaga, Spain

A Realistic Large-Signal Microwave PHEMT Transistors Model for SPICE 453J.M. Zamanillo, H. Ingelmo, C. Perez-Vega, Angel Mediavilla, Universidad de Cantabria, SpainUltra High IP3 Passive GaAs FET Mixers 457Andreas Wentzel, Dariusz Pienkowski, Georg Boeck, Technische Universitdt Berlin, GermanyA Low-Noise, High-Linearity Balanced Amplifier in Enhancement-Mode GaAs pHEMTTechnology for Wireless Base-Stations 461Thomas Chong, Agilent Technologies, Malaysia60 GHz GaAs MMIC Mixers with Integrated LO Buffer 465A.P.M. Maas, J.A. Hoogland, TNO, The NetherlandsSubstrate Effects in Wideband SiGe HBT Mixer Circuits 469Tom K. Johansen, Viktor Krozer, Jens Vidkjcer, Torsten Djurhuus, Technical University of Denmark,DenmarkLow Noise, Low Interference Automated Bias Networks for Low Frequency NoiseCharacterization Set-Up's 473M. Borgarino, M. Rossi, F. Fantini, Universita di Modena e Reggio Emilia, ItalyAccelerating the Transient Simulation of Semiconductor Devices Using Filter-BankTransforms 477Masoud Movahhedi, Abdolali Abdipour, Amir Kabir University of Technology, Iran

Session: GAAS/EuMCl - ORALPower Amplifiers for Cellular and WLAN Applications

A 4.8-6 GHz IEEE 802.1 la WLAN SiGe-Bipolar Power Amplifier with On-Chip Output Matching 481Winfried Bakalski1, Andriy Vasylyev, Werner Simbiirger, Marcus Kail, Alfons Schmid, KrzysztofKitlinski;l Infineon Technologies AG, GermanySiGe Power HBT Design Considerations for IEEE 802.11 Applications 485Ningyue Jiangl, Zhenqiang Ma, Pingxi Ma, Vijay Reddy, Marco Racanelli;J University ofWisconsin-Madison, USASingle-Chip Dual-Band WLAN Power Amplifier Using InGaP/GaAs HBT 489Chien-Cheng Lin, Yu-Cheng Hsu, Industrial Technology Research Institute, TaiwanTwo-Stage Adaptive Power Amplifier MMIC for Handset Applications 493Youn-Sub Noh1, In-Bok Yom, Chul Soon Park; lETRI, KoreaA 100W High-Efficiency GaN HEMT Amplifier for S-Band Wireless System 497Arata Maekawa, Masaki Nagahara, Takashi Yamamoto, Seigo Sano, Eudyna Devices Inc., Japan

Session: GAAS/EuMC2 - ORALPower Handling in RF-MEMS and Reliability Aspects

A MEMS Capacitor with Improved RF Power Handling Capability 501David Girbau1, Nerea Otegi, Lluis Pradell, Antonio Ldzaro;l Universitat Politecnica de Catalunya,SpainElectromechanical Modelling of High Power RF-MEMS Switches with Ohmic Contact 505S.G. Tan1, E.P. McErlean, Jia-Sheng Hong, Z. Cui, L. Wang, Robert B. Greed, Daniel C. Voyce;lHeriot-Watt University, U.K.Lifetime Characterization of Capacitive Power RF MEMS Switches 509Afshin Ziaei1, Thierry Dean, Yves Mancuso;l Thales Research & Technology, FranceThermal Analysis of RF-MEMS Switches for Power Handling Front-End 513F. Coccetti, B. Ducarouge, E. Scheid, David Dubuc, Katia Grenier, Robert Plana, LAAS, FranceStress-Induced Failure Modes in High-Tuning Range RF MEMS Varactors 517Trushal Chokshi, Dimitrios Peroulis, Purdue University, USA

Session: GAAS/EuMC3 - ORALSilicon Technologies for Microwave and Millimeter-wave Applications

Can Silicon Catch the Millimeter Wave? 521John R. Long, Technische Universiteit Delft, The Netherlands10-40GHZ Design in SiGe-BiCMOS and Si-CMOS — Linking Technology and Circuits toMaximize Performance 525H. Veenstral, G.A.M. Hurkx, E. van der Heijden, C.S. Voucher, M. Apostolidou, D. Jeurissen, P.Deixler;l Philips Research Laboratories, The Netherlands

MEMS-IC Integration for RF and Millimeterwave Applications 529David Dubuc1, W. De Raedt, G. Carchon, MM Do, E. Fourn, Katia Grenier, Robert Plana; lLAAS,FranceA 23-24 GHz Low Power Frequency Synthesizer in 0.25^m SiGe 533Olivier Mazouffre1, Herve Lapuyade, Jean-Baptiste Begueret, Andreia Cathelin, Didier Belot, PatrickHellmuth, Yann Deval; 1LXL, France

Session: GAAS/EuMC4 - ORALTechnologies for Microwave Device and Circuit Packaging

Optimised Thermal and Microwave Packaging for Wide-Band Gap Transistors : Diamond &Flip Chip 537Chloe Schaffauser1, Olivier Vendier, S. Forestier, F. Michard, D. Geffroy, Claude Drevon, J.F.Villemazet, Jean-Louis Cazaux, S.L. Delage, J.L. Roux;' Alcatel Space, France

Thermal Management of Power HBT in Pulsed Operating Mode 541Didier Floriot1, J.-C. Jacquet, E. Chartier, J.-M. Coupat, P. Eudeline, P. Auxemery, H. Blanck;1 Alcatel-Thales III-VLab, FranceA Low-Cost High Performance GaAs MMIC Package Using Air-Cavity Ceramic Quad FlatNon-Leaded Package up to 40 GHz 545Young-Ho Suh1, David Richardson, Anna Dadello, Simon Mahon, James T. Harvey;l MimixBroadband, USA3D Wideband Package Solution Using MCM-D BCB Technology for Tile TR Module 549Thierry Barbier1, F. Mazel, B. Reig, Philippe Monfraix;: Thales Airborne Systems, France

A Novel Package Approach for Multichip Modules Based on Anisotropic ConductiveAdhesives 553Johann Heyen1, Arne F. Jacob;l EPCOS AG, Germany

Session: GAAS/EuMC5 - ORALMillimeter-wave Frequency Converters

A Broad-Band Active Frequency Doubler Operating up to 120 GHz 557V. Puyal1, A. Konczykowska, P. Nouet, S. Bernard, M. Riet, F. Jorge, J. Godin;' Alcatel-Thales UI-VLab, FranceA Low Cost SMT Integrated Frequency Doubler and Power Amplifier for 30GHz DBS UplinkApplications 561Monica Bhatnagar, Henrik Morkner, Agilent Technologies Inc., USA

A 150 to 220 GHz Balanced Doubler MMIC Using a 50 nm Metamorphic HEMT Technology 565C. Schworer1, Y. Campos Roca, A. Leuther, A. Tessmann, M. Seelmann-Eggebert, /•/. Massler, M.Schlechtweg, G. Weimann;' Fraunhofer IAF, Germany

A Novel Technique for Obtaining LO and RF (LSB) Rejection in 25-40 GHz Microwave UpConversion Mixers Based on the Concepts of Distributed and Double Balanced Mixing 569M. Mehdi1, C. Rumelhard, J.L. Polleux, B. Lefebvre; lESYCOM, France

Design of Broadband, Highly Integrated, 20-30 GHz and 35-45 GHz MMIC Up-Converters 573Emmanuelle Convert1, Paul Beasly, Simon Mahon, Anna Dadello, James T. Harvey;' MimixBroadband, Australia

Session: GAAS/EuMC6 - ORALInnovative Approaches in RF-MEMS Technology

Characterization of Low-Temperature Ultrananocrystalline Diamond RF MEMS Resonators 577Sergio P. PachecoJ, Peter Zurcher, Steven R. Young, Don Weston, William J. Dauksher, OrlandoAuciello, John A. Carlisle, Neil Kane, James P. Birrell; lFreescale Semiconductor Inc., USADC - 65 GHz Characterization of Nanocrystalline Diamond Leaky Film for Reliable RF MEMSSwitches 581Joolien Chee, Ratnakar Karru, Timothy S. Fisher, Dimitrios Peroulis, Purdue University, USAElectromechanical Resonances of SiC and A1N Beams Under Ambient Conditions 585K. Brueckner, Ch. Forster, K. Tonisch, V. Cimalla, O. Ambacher, Ralf Stephan, K. Blau, Matthias A.Hein, Technische Universitdt Ilmenau, GermanyW-Band Low-Loss Wafer-Scale Package for RF MEMS 589Byung-Wook Min1, Gabriel M. Rebeiz;1 University of Michigan, USAGeneration of Third and Higher-Order Intermodulation Products in MEMS Capacitors, andtheir Effects 593David Girbau{, Nerea Otegi, Lluis Pradell, Antonio Ldzaro;l Universitat Politecnica de Catalunya,Spain

GAAS/EuMC Poster Session

A Design of K-Band Predistortion linearizer Using Reflective Schottky Diode for SatelliteTWTAs 597Hee-Young Jeong1, Sang-Keun Park, Nam-Sik Ryu, Yong-Chae Jeong, In-Bok Yom, Young Kim;lChonbuk National University, KoreaA Novel Linearizing Technique Using Dual Diode Based Linearizers for Lightweight PowerAmplifiers 601T. Kashiwa, Y. Ohnishi, K. Yamamoto, H. Ohshima, Furuno Electric Co. Ltd., Japan50 Gb/s DFF and Decision Circuits in InP DHBT Technology for ETDM Systems 605A. Konczykowska, F. Jorge, M. Riet, J. Moulu, J. Godin, Alcatel-Thales IITV Lab, FranceA GaAs Monolithic Anti-Series Varactor Pair for Voltage-Controlled Capacitance withReduced RF Nonlinearity 609Qing Han1, Atsushi Shimura, Keizo Inagaki, Takashi Ohira, Masami Akaike; lATR-WEL, JapanLow Cost MMIC Chipset for VSAT Ground Terminals 613Y. Butel1, D. Langrez, J.F. Villemazet, G. Coury, J. Decroix, Jean-Louis Cazaux;l Alcatel Space, FranceA 2 GHz CMOS dB-Linear Programmable-Gain Amplifier with 51 dB Dynamic Range 617L. Wul, U. Basaran, R. Tao, M. Berroth, Z. Boos;l Universitdt Stuttgart, GermanyAn Active Balun for High-CMRR IC Design 621Francesco Centurelli1, Raimondo Luzzi, Piero Marietti, Giuseppe Scotti, Pasquale Tommasino,Alessandro Trifiletti;x Universita di Roma "La Sapienza", ItalyA K Band Miniature, Broadband, High Output Power HBT MMIC Balanced Doubler withIntegrated Balun 625Ching-Chih Weng, Zuo-Min Tsai, Huei Wang, National Taiwan University, TaiwanA Novel Wideband MMIC Voltage Controlled Attenuator with a Bandpass Filter Topology 629Scarlet M. Daoud1, Prasad N. Shastry;' US Monolithics, USAGaAs MMICs for Use in Upconverter Module for Ka-Band OBS Satellite Transponders 633Jin-Cheol Jeong, Dong-Pil Chang, Dong-hwan Shin, In-Bok Yom, ETRI, KoreaWideband Monolithic Microwave Integrated Circuit Frequency Converters with GaAsmHEMT Technology 637Viktor Krozer, Tom K. Johansen, Torsten Djurhuus, Jens Vidkjazr, Technical University of Denmark"DenmarkMultistage Broadband Amplifiers Based on GaN HEMT Technology for 3G/4G Base StationApplications with Extremely High Bandwidth 641D. Wiegner1, T. Merk, U. Seyfried, W. Tempi, S. Merk, R. Quay, F. van Raay, H. Walcher, H. Massler,M. Seelmann-Eggebert, R. Reiner, R. Moritz, R. Kiefer;l Alcatel SEL AG, GermanyA 0.18-A/m 2.4~6GHz CMOS Broadband Differential LNA for WLAN and UWB Receiver 645C.-P. Chang, C.-C. Yen, H.-R. Chuang, National Cheng Kung University, Taiwan

Influence of Envelope Impedance Termination on RF Behaviour of GaN HEMT Power Devices 649Bernd Bunz, A. Ahmed, Gunter Kompa, Universitdt Kassel, Germany

An Analog Linearizer Using Second Harmonic Signals Feedforwarding 653Sung Yong Kiml, Mi Ae Jang, Ki Kyung Jeon, Young Kim, Yong-Chae Jeong;' Kumoh NationalInstitute of Technology, Korea

Modelling of a 4-18GHz 6W Flip-Chip Integrated Power Amplifier Based on GaN HEMTsTechnology 657Sandra De Meyer1, Audrey Philippon, Michel Campovecchio, Christophe Charbonniaud, StephanePiotrowicz, Didier Floriot, Raymond Quere;l IRCOM, France

On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs 661C. Meliani, M. Rudolph, W. Heinrich, FBH, GermanyA Miniature DC-to-50 GHz CMOS SPDT Distributed Switch 665Mei-Chao Yeh, Zuo-Min Tsai, Huei Wang, National Taiwan University, Taiwan

A 45 dB Variable Gain Low Noise MMIC Amplifier 669M. Anowar Masud, Herbert Zirath, Matthew Kelly, Chalmers University of Technology, Sweden

A C-Band High Efficiency Second Harmonic Tuned Hybrid Power Amplifier in GaNTechnology 673Paolo Colantonio1, Franco Giannini, R. Giofre, Ernesto Limiti, A. Serino, M. Peroni, P. Romanini;1 Universita di Roma "Tor Vergata", Italy

A Ku Band Monolithic Power Amplifier for TT&C Applications 677C. Florian1, R. Cignani, G. Vannini, Massimo Claudio Comparini;l Universita di Bologna, Italy

A Wideband Fully Integrated SiGe BiCMOS Medium Power Amplifier 681Hyun-Cheol Bae, Sang-Hoon Kim, Young-Joo Song, Sang-FIeung Lee, Ja-Yol Lee, Jin-Young Kang,ETRI, KoreaRLC Parasitic Extraction and Circuit Model Optimization for Cu/SiO2-90nm InductanceStructures 685Hazem Mahmoud Hegazy, Mentor Graphics, EgyptAn Integrated Double Balanced Mixer on Multilayer Liquid Crystalline Polymer (M-LCP)Based Substrate 689Wansuk Yun1, Vinu Govind, Sidharth Dalmia, Venky Sundaram, Madhavan Swaminathan, GeorgeE. White;l Georgia Institute of Technology, USA

Multilayer RF PCB for Space Applications: Technological and Interconnections Trade-Off 693Mathieu Paillard1, Frantz Bodereau, Claude Drevon, Philippe Monfraix, Jean-Louis Cazaux, L. Bodin,P. Guyon;l Alcatel Space, France

Characterization of Various Shaped 5 GHz TFBARs Based on 3D Full-Wave Modeling 697Yong-Dae Kiml, Kook-Hyun Sunwoo, Sung-Hoon Choa, Duck-Hwan Kim, In-Sang Song, Jong-GwanYook;l Yonsei University, Korea

SPDT RF MEMS Switch Using a Single Bias Voltage and Based on Dual Series and ShuntCapacitive MEMS Switches 701T. Ketterl, Thomas M. Weller, University of South Florida, USA

Behaviour of a TWTA with a Single or Multicarrier Input Signal for TelecommunicationApplications 705C. Laporte, L. Lapierre, A. Mallet, A. Anakabe, CNES, France