gaas phemt mmic driver amplifier, qfn4mm dc to … phemt mmic driver amplifier, qfn4mm dc to 20...
TRANSCRIPT
AMPL
IFIE
RS
|| G
aAs
MM
IC P
HEM
T
408.526.1100 ◊ 408.526.1105
[email protected] ◊ www.eclipsemdi.com
2095-60 Ringwood Ave ◊ San Jose, CA 95131
1 - 5
EMD1705QFN4
GaAs PHEMT MMICDriver Amplifier, QFN4mmDC to 20 GHz
Typical Applications ††General Purpose Application ††Commercial and Industrial Application ††VSAT ††Test Instruments
FEATURES ◊15 dB Gain @ 10 GHz◊+24 dBm P1dB Output Power @ 10 GHz◊+8V @ 190 mA typical supply voltage◊Low Cost QFN 4mm leadless RoHS Compliant package◊ Hermetically Sealed◊Die available upon request
supply. Gain flatness of this device is
Product DescriptionEclipse Microdevices EMD1705 is a GaAs MMIC PHEMPT Distributedgeneral purpose driver amplifier. This MMIC is ideal for applicationsthat requires a typical P1dB output power of +23 dBm up to 14 GHz, while requiring only 190mA from a + 8 Volt supply. Gain flatnessof this device is less than 2.0 dB from DC to 20 GHz.The EMD1706 comes in a small RoHS compliant 4mm QFN leadlesspackage and has excellent RF and thermal properties ideal forcommercial and industrial applications.
ELECTRICAL SPECIFICATION @ +25 °C, Vdd=8V,Ids=190mA
Parameters SPECIFICATION
FREQ. (GHz)
MIN
TYPICAL
MAX
Units
Gain
2.0 8.0 14.0 20.0
16.2 14.0 15.5 14.0
16.7 15.5 17.5 15.3
dB dB dB dB
Gain Flatness dc to 10.0 10.0 to 20.0 ±1.00
±1.45 ±1.40 ±1.80
dB dB
Gain Variation Over Temperature
0.02 dB/°C
Noise Figure 6.5
dB
Input Return Loss(S11) 10 dB
Output Return Loss(S22) 8 dB
1 dB Compression Point(P1dB)
2.0 8.0 14.0 20.0
23.0 24.0 22.5 19.1
dBm dBm dBm dBm
Saturated Output Power(Psat)
2.0 8.0 14.0 20.0
25.0 24.6 24.2 21.0
dBm dBm dBm dBm
Third-Order Output Intercept Point 28 dBm
AMPL
IFIE
RS
|| G
aAs
MM
IC P
HEM
T
408.526.1100 ◊ 408.526.1105
[email protected] ◊ www.eclipsemdi.com
2095-60 Ringwood Ave ◊ San Jose, CA 95131
2 - 5
EMD1705
GaAs PHEMT MMICDriver Amplifier, QFN4mmDC to 20 GHz
1705 - DC-20GHz Distributed Amplifier - In Plastic
-20
-15
-10
-5
0
5
10
15
20
0 5 10 15 20 25 30
Frequency/GHz
Res
pons
e/dB
S11/dBS21/dBS22/dB
Vdd=8V; Vgg2=3.5V; Vgg1 = -0.4V; Ids=191mA
1705 in Plastic - Power Performance
10
12
14
16
18
20
22
24
26
28
30
0 2 4 6 8 10 12 14 16 18 20
Frequency/GHz
Pow
er/d
Bm
P1dB/dBmPsat/dBm
AMPL
IFIE
RS
|| G
aAs
MM
IC P
HEM
T
408.526.1100 ◊ 408.526.1105
[email protected] ◊ www.eclipsemdi.com
2095-60 Ringwood Ave ◊ San Jose, CA 95131
3 - 5
EMD1705
GaAs PHEMT MMICDriver Amplifier, QFN4mmDC to 20 GHz
Absolute Maximum Rating
RF Input Power: +18 dBmDrain Voltage(Vdd): +8.0 VDCGate Voltage(Vgg): -2 to 0 VoltsMax Tj 85°C: +110°CStorage Temp: -55 to +150°COperating Temp: -40 to +85°C
Functional Block Diagram
NOTES:1. MATERIAL: ROGERS 4350, 10 MIL THICK2, DIMENSIONS ARE IN INCHES[MM]
1
24
.022 [0.55]
.032 [0.80]
RF INPUT
.012 [0.30]PAD WIDTH
SQ .159 [4.05]
.039 [1.00]
Ø.010 [Ø0.25]
.010 [0.25]
SQ .105 [2.68]
RECOMMENDED PCB LAYOUT
GAP
TOP VIEW BOTTOM VIEW
REF 4.000
REF 0.8000.320TYP
0.05
12 7
2419
13
18
6
1
5
4
3
2
2.500SQ
2.200SQ
16
15
14
17
20 21 22 23
891011
24
1
0.500
4.000SQ
0.230
127
24 19
13
18
6
1
5
4
3
2
16
15
14
17
20212223
8 9 10 11
GND
RF-IN
GND
Vgg1NC NC NC
RF-OUT & Vdd
NC
GND
GND
NC
NC
NC
Vgg2 ACG1
ACG4 ACG3
24
13A3
1705
ACG2