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12V

ID 13.5A

VSSS

2.9mΩ(max.)

Schematic Diagram

RSS(ON)

Description The GSFCP1214 utilizes the latest techniques to achieve high cell density and low on-resistance and it is ESD protected. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications.

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Main Product Characteristics

Features and Benefits § Advanced MOSFET process technology§ Ideal for high efficiency switched mode power supplies§ Low on-resistance with low gate charge§ Fast switching and reverse body recovery

CSP

12V Dual N-Channel MOSFETsGSFCP1214

Symbol

VSSS

VGSS

IS

ISP

PT

Tch

TSTGStorage Temperature Range -55 To +150 °C

W2.2

Channel Temperature Range +150 °C

A

Max.

12

±8

13.5

135Source Current (Pulse)1,2

Unit

V

V

A

Total Dissipation1

Parameter

Source-Source Voltage

Gate-Source Voltage

Source Current(DC)1

G1

S1

G2

S1 S1 S1 S2 S2 S2 S21 2 4 5 6 7 9 10

3 8

Electrical Characteristics (TA=25°C unless otherwise specified)

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Notes:

1. Mounted on FR4 board (25.4 mm x 25.4 mm x t1.0 mm)using the minimum recommended pad size (36μm Copper ).2. t=10μs, Duty Cycle ≤ 1%.3. Measurement circuit for td(on)/tr/td(off)/tf,when FET1 is measured,G2 and S2 are short-circuited.

Parameter Symbol Conditions Min. Typ. Max. Unit

Source-Source Breakdown Voltage BVSSS VGS=0V, IS=1mA 12 - - V

Zero Gate Voltage Source Current ISSS VSS=10V, VGS=0V - - 1 μA

Gate-Source Leakage Current IGSS VGS=±8V, VSS=0V - - ±10 μA

Gate to Source Threshold Voltage VGS(th) VSS=VGS, IS=250μA 0.4 0.8 1.4 V

VGS=4.5V, IS=3A 1.2 2.2 2.9

VGS=3.8V, IS=3A 1.3 2.3 3.0

VGS=3.1V, IS=3A 1.4 2.8 4.2

VGS=2.5V, IS=3A 1.8 3.6 6.0

Turn-On Delay Time3 td(on) - 0.5 -

Turn-On Rise Time3 tr - 2.5 -

Turn-Off Delay Time3 td(off) - 6.4 -

Turn-Off Fall Time3 tf - 14.5 -

Reverse Transfer Capacitance Crss

VSS=6V, VSS=0V,F=1MHz

- 158 -

pF

Diode Forward Voltag VF(S-S) VGS=0V, IS=6.8A - - 1.3 V

VSS=10V, RL=3.3Ω VGS=4.5V

Static Parameters

Static Source to Source On-Resistance RSS(ON)

mΩ

μS

Output Capacitance Coss

Input Capacitance Ciss

- 589 -

- 2006 -

12V Dual N-Channel MOSFETsGSFCP1214

Typical Electrical and Thermal Characteristic Curves

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Figure 1. Output Characteristics Figure 2. Transfer Characteristics

Figure 3. RSS(ON)-Source Current Figure 4. RSS(ON)-Gate to Source Voltage

Figure 5. Source-Source Diode Forward Figure 6. Safer Operation Area

SO

UR

CE

CU

RR

EN

T

I S

(A

)

SO

UR

CE

CU

RR

EN

T

I S

(A

)

GATE TO SOURCE VOLTAGE VGS

(V)

ON

-RES

ISTA

NC

E

RSS

(ON

) (m

)

ON

-RE

SIS

TA

NC

E

RS

S(O

N)

(m

)

DIO

DE

FO

RW

AR

D C

UR

RE

NT

CU

RR

EN

T

I F

(A)

0.00 0.050

2

4

6

8

10

12

14

Pulsed

VGS

=4.5V

0.01 0.02 0.03 0.04

SOURCE TO SOURCE VOLTAGE VSS

(V)

Ta=25

VGS=3.8V

VGS

=2.5V

VGS

=3.1V

0.0 0.3 0.6 0.9 1.2 1.50

3

6

9

12

15

Pulsed

TJ=125,85,25,-40

VSS=5V

2 861.0

2.0

3.0

4.0

5.0

VGS=2.5V

Pulsed

4SOURCE CURRENT IS (A)

VGS=4.5V

VGS=3.8V

VGS=3.1V

TJ=25

1 0 80

2

4

6

8

10

2 4 6

GATE TO SOURCE VOLTAGE VGS

(V)

PulsedIS=3A

TJ=125

85

25

-40

0.00.01

0.1

1

10Pulsed

0.2 0.4 0.6 0.8

BODY DIODE FORWARD VOLTAGE VF (V)

TJ=125 85 25

1.0

20

-40

SOURCE

CU

RR

ENT

I S

(A

)

0.01 1000.01

0.1

1

10

100

1000

0.1 1 10

SOURCE TO SOURCE VOLTAGE VSS (V)

BVSSS

DC1s

100ms

10ms

1ms

100μs

10μs

Limited by RSSON@

4.5V

ISM

TA=25Mounted on FR4 board (25.4mm×25.4mm×t1.0mm) Single Pulse

12V Dual N-Channel MOSFETsGSFCP1214

Typical Electrical and Thermal Characteristic Curves

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Figure 8. Normalized Maximium Transient Thermal Impedance

0.000001 0.00001 0.0001 1 10 100 1000

0.01

NO

RM

ALIZ

ED T

RAN

SIEN

T TH

ERM

AL

RES

ISTA

NC

E,

Z θJA

(K

/W)

0.001 0.01 0.1

SQUARE WAVW PULSE DURATION, t (second)

D=Ton/TTJ,PK=TA+PDM×ZθJA×RθJA

RθJA=52°C/W

RθJA=52/ W

D=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse

In descending order

0.1

1

10

100

12V Dual N-Channel MOSFETsGSFCP1214

5/5www.goodarksemi.com Doc.USGSFCP1214xSC2.0 Jan.2020

Package Outline Dimensions (CSP)

Recommended Pad Layout

unit:mm

12V Dual N-Channel MOSFETsGSFCP1214