from power electronics devices to electronic power · pdf filewhat is the future of power...

Center for Power Electronics SystemsThe Bradley Department of Electrical and Computer Engineering

College of Engineering

Dushan Boroyevich

Presentation at the Second Annual Conference of UK Engineering and Physical Sciences Research Council

Centre for Power ElectronicsUniversity of Nottingham, UK

From Power Electronics Devices to Electronic Power Systems

– A CPES Perspective –

29th – 30th June 2015

What is the Future of Power Electronics?Power

ElectronicsElectricPower

Between 1920 - 1970,every 1.5 yearsthe cost of kWh

dropped 5%.Since then it is constant.

Micro-electronics

Moore’s Law:“Every 1.5 yearsthe cost of a ‘bit’

drops 50%.”

June 30, 2015 db-1

Vision

Enable unprecedented growth of power electronics industryby developing an Integrated System Approach

viaIntegrated Power Electronics Modules,

to demonstrate 10-fold improvements inquality, reliability and cost effectiveness

of power electronics systems in 10 years.

SystemIntegration

IPEM

June 30, 2015 db-2a

• Use “Lego” approach to power electronics based on the concept of:

Integrated Power Electronics Module (IPEM)

“Jon Clare” approach to FUN

Vision

June 30, 2015 db-2b

Center for Power Electronics SystemsA National Science Foundation Engineering Research Center, 1998-2008

80 Industry Partners

Virginia Tech

Universityof Wisconsin

Madison

RensselaerPolytechnic

Institute

Universityof Puerto Rico

Mayaguez

NorthCarolina A&T State

University

Virginia Tech

SystemIntegration

IPEM

June 30, 2015 db-3

1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008

Electronic Power Distribution SystemsDatacom Power Systems and Motor Drives

Center for Power Electronics SystemsA National Science Foundation Engineering Research Center

Gen. I Generation II Generation III Generation IVJune 30, 2015 db-4

Center for Power Electronics Systems

June 30, 2015 db-5a

Center for Power Electronics SystemsProfessors:

Fred C. Lee, DirectorDushan Boroyevich, Co-DirectorKhai D. T. NgoRolando BurgosQiang Li

Other:1 Adjunct/Affiliate Faculty 6 Research Associates4 Full-time Staff2 Part-time Staff

14 Visiting Scholars44 Doctoral Students

4 Masters StudentsAnnual Research Expenditures $4-5 million

June 30, 2015 db-5b

Center for Power Electronics SystemsProfessors:

Fred C. Lee, DirectorDushan Boroyevich, Co-DirectorKhai D. T. NgoRolando BurgosQiang Li

Other:1 Adjunct/Affiliate Faculty 6 Research Associates4 Full-time Staff2 Part-time Staff

14 Visiting Scholars44 Doctoral Students

4 Masters StudentsAnnual Research Expenditures $4-5 million

Technology Areas

Application Areas

Sustainable Energy Systems

VehicularPower Converter

Systems

Point-of-Load Conversion

Power Management for Computers &

Telecommunications

High Density Integration

Modeling and Control

EMI and Power Quality

Power Electronics

Components

Power Conversion Topologies and Architectures

June 30, 2015 db-5c

Center for Power Electronics Systems

watts to megawattswatts to megawatts

Emerging Applications

Portable

DataCom

Ships

Airplanes Trains

Cars

GridPowerElectronics

Renewable Energy

MediumVoltageConverters

Technology Areas

Application Areas

Sustainable Energy Systems

VehicularPower Converter

Systems

Point-of-Load Conversion

Power Management for Computers &

Telecommunications

High Density Integration

Modeling and Control

EMI and Power Quality

Power Electronics

Components

Power Conversion Topologies and Architectures

June 30, 2015 db-5d

Emerging Aircraft Electric Power Systems (MEA)

PW Wheeler, JC Clare, et al., “An overview of the more electrical aircraft,” Proc. IME-G, Dec. 2012.

Fuel pumpsand oil pumps

on engineGearbox driven

generatorsGearbox drivenhydraulic pump

High pressureair “bleed” from

engine

Mechanical100 kW

Electrical200 kW

Hydraulic240 kW

Pneumatic1.2 MW

June 30, 2015 db-6a

Emerging Aircraft Electric Power Systems (MEA)

PW Wheeler, JC Clare, et al., “An overview of the more electrical aircraft,” Proc. IME-G, Dec. 2012.

> 1 MW

June 30, 2015 db-6b

Hybrid AC/DC Electronic Power Distribution Systems

±270 V

230 V360-800 Hz 115 V

400 Hz

28 V

June 30, 2015 db-7a

Hybrid AC/DC Electronic Power Distribution Systems

June 30, 2015 db-7b

Electronic Power Systems Integration• Electric energy is provided by power

electronics converters and is consumed by power electronics converters!

• Reduced size, weight, and fuel consumption by optimum sizing and utilization of sources, loads, and power distribution system.

• Subsystems integration is critical:– Line frequency (DC, 50/60/400 Hz)

Power conversion and power flow control– Low frequency (below switching frequency)

Voltage stability, voltage distortion– High frequency (switching frequency and above)

EMI, EMC

Power Grid

SWGR

June 30, 2015 db-8

Wide-Bandgap Silicon Carbide (SiC) Power Semiconductors Devices

1.1 eV 3.3 eVBand gap

1.5 W/cmK 4.9 W/cmKThermalconductivity

2.0 MV/cm0.3 MV/cmCritical E-field

Low HighDoping

VSSi SiC

High-voltage(≥ 1.2 kV);

High-temperature(≥ 200 °C);

Unipolar switches

SiCdevices

Conductionloss

Switchingloss

High-temp. operation

Improved power

density

State-of-the-artdevices

Si IGBT≤ 20 kHz, 150-175 °C

SiC FETs≥ 20 kHz, 200-250 °C

for 0.5 kV < Vdc < 1 kV

June 30, 2015 db-9

Smaller cooling system size

High-freq. passive components

Smaller passives sizes

High-temperature packaging

DeviceContinuous

Current Rating (datasheet)

TMAX (datasheet)Normalized Die

Area to Cree MOSFET

Cree SiC MOSFET (C2M0080120D)

31.6 A (25 ˚C);20 A (100 ˚C) 150 ˚C 1.00

Rohm SiC MOSFET (SCH2080KE)

35 A (25 ˚C);22 A (100 ˚C) 150 ˚C 1.21

GE SiC MOSFET(GE12N20L)

30 A (25 ºC);22.5 A (100 ºC) 200 ˚C 0.97

Fairchild SiC BJT(FSICBH057A120) 15 A 175 ˚C 0.64

GeneSiC SiC SJT (GA10JT12) 6 A (25 ˚C) 175 ˚C 0.33

Infineon N-On SiCJFET (IJW120R100T1)

26 A (25 ˚C);10 A (≤ 150 ˚C) 175 ˚C 1.29

SemiSouth N-Off SiCJFET (SJEP120R100)

17 A (100 ˚C);10 A (150 ˚C) 150 ˚C 0.43

SiC Switch Comparative Characterization

June 30, 2015 db-10a

DeviceContinuous

Current Rating (datasheet)

TMAX (datasheet)Normalized Die

Area to Cree MOSFET

Cree SiC MOSFET (C2M0080120D)

31.6 A (25 ˚C);20 A (100 ˚C) 150 ˚C 1.00

Rohm SiC MOSFET (SCH2080KE)

35 A (25 ˚C);22 A (100 ˚C) 150 ˚C 1.21

GE SiC MOSFET(GE12N20L)

30 A (25 ºC);22.5 A (100 ºC) 200 ˚C 0.97

Fairchild SiC BJT(FSICBH057A120) 15 A 175 ˚C 0.64

GeneSiC SiC SJT (GA10JT12) 6 A (25 ˚C) 175 ˚C 0.33

Infineon N-On SiCJFET (IJW120R100T1)

26 A (25 ˚C);10 A (≤ 150 ˚C) 175 ˚C 1.29

SemiSouth N-Off SiCJFET (SJEP120R100)

17 A (100 ˚C);10 A (150 ˚C) 150 ˚C 0.43

SiC Switch Comparative Characterization

1200 V SiCswitch

is faster than

1200 V SiIGBT

1200 V SiCswitch

has lowerconductionloss than

600 V SiMOSFET

June 30, 2015 db-10b

High-Power-Density, 10 kW Motor Drive with High-Temperature Modules

• High-temperature SiC modules• Sensorless control• Soft start• Fan load application

70 kHz 40 kHz

M

June 30, 2015 db-11



70 kHz 40 kHz

MØ = 21.5 cm

175 ºC Converter250ºC Converter

June 30, 2015 Tutorial: Is SiC a Game Changer? db-12a

Power Density:• Low-temperature

1.04 kW/lb• High-temperature

1.27 kW/lb• Thermal management

is 50% smaller for HT



70 kHz 40 kHz

MØ = 21.5 cm

26.5 mm

Inverter current (40A/div)

Rectifier current (40 A/div)

DC link voltage (200 V/div)

Input voltage (500 V/div)

June 30, 2015 Tutorial: Is SiC a Game Changer? db-12b

Interleaved High Power Density AFE Converter(15 kW, SiC, 2 Parallel Interleaved 3-phase Boost Rectifiers)

iA1

iC1

N R

A1B1

C1

A2B2

C2

VSC1

VSC2

iA2

*

*

iB1

iB2

*

*iC2

*

*

L1

L2

L3

LA1

iA

iB

iC

EMI Filter

LA2

LB1LB2

LC1LC2

15 kW @ 6.3 kW/l with θjmax = 250 ºC

EMI Filter

Power Modules:

June 30, 2015 db-13

High-Power High-Temperature Starter/Generator

S / G

Improved substrate layout to minimize loop inductances

Fabricated module with DC decoupling capacitors

SiC MOSSiC SBD

Thermistor

HT ceramic

caps

Fast & clean switchingTurn-on Turn-off

Hard switching w/ RG = 0 ΩFast di/dt & dv/dt with small VDS overshoot

June 30, 2015 db-14a


S / G

Improved substrate layout to minimize loop inductances

Fabricated module with DC decoupling capacitors

SiC MOSSiC SBD

Thermistor

HT ceramic

caps

Switching Lossis 10-20% of an equivalent IGBT

Module

0200400600800

10001200140016001800

0 10 20 30 40 50 60 70

June 30, 2015 db-14b


S / G

200 oC Operation

Switching at 100 kHz, 560 V

12 SiC MOSFETs, 4 SiC diodes200 oC, 1200 V, 120 A

Nomex HT insulation

TorlonHT plastic

HT ceramic caps

AlSiCbaseplate

50 kW Active Power Module

June 30, 2015 db-15

Reliability of Direct-Bond-Copper (DBC) Substrate

• DBC substrate fails in < 20 cycles

‐100

‐50

0

50

100

150

200

250

0 50 100 150 200

Tem

pera

ture

(C

)

Time (min)

13 min

13 min

Before temperature cycling

After temperature cycling

Reliability of DBC substrate in thermal cycling between -55ºC and 200ºC

Cu

Al2O3

Crack

June 30, 2015 db-16


Cu

CuAl2O3

Direct-Bond-Copper Substrate

• DBC substrate fails in < 20 cycles


June 30, 2015 db-17a


Cu

CuAl2O3


Step-edge

Creating stepped edges

• DBC substrate fails in < 20 cycles• With stepped-edge fails in ~ 100 cycles


June 30, 2015 db-17b


Cu

CuAl2O3


Sealing MaterialStep-edge

Creating stepped edges Applying sealing material

• DBC substrate fails in < 20 cycles• With stepped-edge fails in ~ 100 cycles• With stepped-edge and Parylene HT sealant fails in ~ 300 cycles• With stepped-edge and Nysil sealant fails in ~ 1200 cycles


June 30, 2015 db-17c


Cu

CuAl2O3


Sealing MaterialStep-edge

Creating stepped edges Applying sealing material

• DBC substrate fails in < 20 cycles• With stepped-edge fails in ~ 100 cycles• With stepped-edge and Parylene HT sealant fails in ~ 300 cycles• With stepped-edge and Nysil sealant fails in ~ 1200 cycles


June 30, 2015 db-17d

Electronic Power Systems Integration

• Subsystems interaction is critical:– Line frequency (DC, 50/60/400 Hz)



EMI, EMC

ldcsdc

dcdc

sdcldc

ldcdc ZZ

VVZZ

ZV

1

00 Nyquist

Criterion

Small-signal stability at DC interface:

Power Grid

SWGR

June 30, 2015 db-18a





EMI, EMC

ac0lacsacac VZZIV

1

1

Generalized Nyquist Criterion

Small-signal stability at AC interface:

Power Grid

SWGR

June 30, 2015 db-18b

Small-signal AC Impedance in Synchronous Coordinates

lacZ

Mag

nitu

de[d

B]M

agni

tude

[dB]

Phas

e[d

eg]

Phas

e[d

eg]

-250

-1000

-180

0

180

-400

-180

0

180

1 101 102 1031 101 102 103

ZddZdq

Zqd Zqq

Frequency [Hz]

Constant Power Load Input Impedance

June 30, 2015 db-19

In-situ Small-signal AC Impedance Measurement in Synchronous Coordinates

June 30, 2015 db-20a

• System frequency:DC, 360-800 Hz

• System voltage:270 V dc, 114-230 V ac

• System power:250 kW

• Measurement frequency:40 Hz - 10 kHz

In-situ Small-signal AC Impedance Measurement in Synchronous Coordinates

• System frequency:DC, 50/60 Hz, 400 Hz

• System voltage:800 V dc, 460 V ac

• System power:100 kW

• Measurement frequency:0.1 Hz - 1 kHz

June 30, 2015 db-20b

Medium Voltage Impedance Measurement Unit

10 kV / 120 A SiC half-bridge

5 kV / 100 A H-bridge

► In-situ impedance measurements

vSZS ZLvL

iLiS vp

ip

Source Load

June 30, 2015 db-21a

Medium Voltage Impedance Measurement UnitSystem Ratings: 10 kV dc or 4.16 kV rms ac

300 A dc or rms acDC, 50 Hz, 60 Hz or 400 Hz

5 kV / 100 A H-bridge

Measurement frequency range: 0.1 Hz - 1 kHz

PEBB 2 PEBB 3PEBB 1

Control Cabinet

Reconfigurable Medium-voltage

IMU Busbar System

Source Terminals

LoadTerminals

June 30, 2015 db-21b

PEBB H-Bridge




PEBB 2 PEBB 3PEBB 1

Control Cabinet


IMU Busbar System

Source Terminals

LoadTerminals

June 30, 2015 db-21c

PEBB H-Bridge

PEBB 3

PEBB 2

PEBB 1SiC

SiC

SiC

Series PEBB ConnectionShunt Injection




PEBB 2 PEBB 3PEBB 1

Control Cabinet


IMU Busbar System

Source Terminals

LoadTerminals

June 30, 2015 db-21d

PEBB H-Bridge

PEBB 3

PEBB 2

PEBB 1SiC

SiC

SiC

Parallel PEBB ConnectionSeries Injection

Experimental AC System Stability Example

Zsdd ZlddZsddwith

decreased inverter

bandwidth

Experimentally Measured Interface Impedances

(Hz)

ZS ZL

June 30, 2015 db-22

Stable

Zsdd ZlddZsdd low bandwidth

Generalized Nyquist Diagrams and Time-domain Waveforms for AC System Stability Example

ZS ZL

June 30, 2015 db-23a

Stable



ZS ZL

June 30, 2015 db-23b

Stable



ZS ZL

Unstable with decreased inverter bandwidth

June 30, 2015 db-23c


ZS ZL

Unstable with decreased inverter bandwidth

June 30, 2015 db-23d

Frequency Stability Study

Power Grid

SWGR

PLLPLL

sacZConstant Current Source Output Impedance

-50

0

50

-50

0

-180

0

180

1 101 102 1031 101 102 103

-180

0

180Mag

nitu

de[d

B]M

agni

tude

[dB]

Phas

e[d

eg]

Phas

e[d

eg]

ZddZdq

Zqd Zqq

Frequency [Hz]

June 30, 2015 db-24a


Power Grid

SWGR

PLLPLL

IAFE

VPCC

IVSI

Weak Grid

June 30, 2015 db-24b


Power Grid

SWGR

PLLPLL

IAFE

VPCC

IVSI

Weak Grid

θC1G12

G21θC2

θg

Gg1 Gg2

G22

~~

~

G11

June 30, 2015 db-24c





EMI, EMC

Power Grid

SWGR

• Modeling, prediction, and design for EMC based on switching model simulations of the whole system impossible!

• Standards have questionable value for new technologies and new systems.

June 30, 2015 db-25

Bi-directional Battery Charger for PHEVwith MHz GaN Converter

3.3 kW, 500 kHz, GaN-based, Bidirectional Battery Charger

+

-

AC

Hi/Lo Caps

Gate drive

June 30, 2015 db-26a

Bi-directional Battery Charger for PHEVwith MHz GaN Converter

3.3 kW, 500 kHz, GaN-based, Bidirectional Battery Charger

+

-

AC

Hi/Lo Caps

Gate drive

June 30, 2015 db-26b

106 107-20

0

20

40

60

80

DCCM 100VDCDM 100V

500 kHz hardware test result

ABB MMC+

‐

Iground

Common-Mode EMI Issues at High-Power Testing

IMU PEBB with 10 kV, 120 A SiC MOSFET

Modules

PEBB

June 30, 2015 db-27a

ABB MMC+

‐

Iground

Common-Mode EMI Issues at High-Power Testing

IMU PEBB with 10 kV, 120 A SiC MOSFET

Modules

I grou

nd[A

]

0 0.02 0.04 0.06 0.08 0.1

-200

-100

0

100

200

time [s]

Measured Ground Current

June 30, 2015 db-27b

EMI “Un-terminated” Model Development

June 30, 2015 db-28a

EMI “Un-terminated” Behavioral Modeling

KNOWN

ZTEST

KNOWN

ZTEST

June 30, 2015 db-28b

EMI “Un-terminated” Behavioral Modeling

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

Measured

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dBu

A)

Measured

10k 50M 10k 50M

KNOWN

ZTEST

KNOWN

ZTEST

June 30, 2015 db-28c

EMI “Un-terminated” Behavioral ModelingTwo-port Network CM Model

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

Measured

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dBu

A)

Measured

10k 50M 10k 50M

KNOWN

ZTEST

KNOWN

ZTEST

June 30, 2015 db-28d

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dB

uA)

MeasuredPredicted

10k 50M 10k 50M

CM “Un-Terminated” EMI Behavioral Model

June 30, 2015 db-29a

10k 50M 10k 50M


104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dB

uA)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

MeasuredPredicted

June 30, 2015 db-29b

10k 50M 10k 50M


104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dB

uA)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

MeasuredPredicted

June 30, 2015 db-29c

10k 50M 10k 50M


104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dB

uA)

MeasuredPredicted

June 30, 2015 db-29d

10k 50M 10k 50M


104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dB

uA)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

MeasuredPredicted

June 30, 2015 db-29e

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dB

uA)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dB

uA)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dB

uA)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dB

uA)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dB

uA)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

i/p

(duB

A)

MeasuredPredicted

104 105 106 1070

10

20

30

40

50

60

70

80

90

100

Frequency (Hz)

Icm

o/p

(dB

uA)

MeasuredPredicted

10k 50M 10k 50M


June 30, 2015 db-29f

Interleaved High Power Density AFE Converter(15 kW, SiC, 2 Parallel Interleaved 3-phase Boost Rectifiers)

iA1

iC1

N R

A1B1

C1

A2B2

C2

VSC1

VSC2

iA2

*

*

iB1

iB2

*

*iC2

*

*

L1

L2

L3

LA1

iA

iB

iC

EMI Filter

LA2

LB1LB2

LC1LC2

15 kW @ 6.3 kW/l with θjmax = 250 ºC

EMI Filter

Power Modules:

DOESN’TWORK

June 30, 2015 db-30

Magnetic Near-field Coupling and Test Setup

(10 by 10 grid is utilized: 100 points)

Tested Toroid Inductor

(Iron Powder)

Near Field Probe

LF-R 50

Input Excitation

XY Table Position Indicator

X

Y

500 kHz

Input Wires

Coil direction

Input Wires12 1

2

3

4567

8

9

1011

Coil directions

db-31aJune 30, 2013




(Iron Powder)

Near Field Probe

LF-R 50

Input Excitation


X

Y

500 kHz5 MHz

Input Wires

Coil direction

Input Wires12 1

2

3

4567

8

9

1011

Coil directions

db-31bJune 30, 2013




(Iron Powder)

Near Field Probe

LF-R 50

Input Excitation


X

Y

500 kHz5 MHz20 MHz

Input Wires

Coil direction

Input Wires12 1

2

3

4567

8

9

1011

Coil directions

db-31cJune 30, 2013

Measured winding current:

LF-U 2,5 probe 1

9

18

27

36

Measured Current Distribution and Near-Field Prediction

db-32aJune 30, 2013


At high frequencies much of the current is conducted by turn-turn and turn-core capacitances.

db-32b


June 30, 2013


500kHz

Amplitude in Z directionAmplitude in XY surface Flux direction



db-32cJune 30, 2013




db-32d

20 MHz

Amplitude in Z directionAmplitude in XY surface Flux direction

June 30, 2013

Filter Transfer Gain

Position 2

Position 1

Single Stage LC Filter Transfer Gain Test

7 MHz

Inductor Impedance

db-33June 30, 2013

System Weight Estimation Tool

June 30, 2015 db-34a


June 30, 2015 db-34b


Weight AC: 378 kg Weight DC: 325 kg

June 30, 2015 db-34c

40 PRINCIPAL PLUS MEMBERSHIPS ($50 K/year)3M Company ABB, Inc. (x 2) ALSTOM TransportAltera – Enpirion Power Chicony Power Technology Co. Crane Aerospace & ElectronicsCSR Zhuzhou Institute Co., Ltd. Delta Electronics (x 3) Dowa Metaltech Co., Ltd.Eltek Emerson Network Power GE Global ResearchGE Power Conversion General Motors Company Groupe SAFRANHuawei Technologies Co., Ltd. (x 3) International Rectifier Keysight TechnologiesLinear Technology Macroblock, Inc. Mitsubishi Electric CorporationMurata Manufacturing Co., Ltd. NEC TOKIN Corporation Nissan Motor Co., Ltd.NXP Semiconductors Panasonic Corporation Richtek Technology CorporationRolls-Royce Siemens Corporate Research Sonos, Inc.Sumitomo Electric Industries, Ltd. Texas Instruments (x 2) The Boeing CompanyToyota Motor Eng. & Mfg. N. America United Technologies Res. Center

12 PRINCIPAL MEMBERS ($30 K/year) AcBel Polytech, Inc. Analog Devices China National Elec. Apparat. Res. Inst.Fairchild Semiconductor Corporation Halliburton Infineon Technologies Maxim Integrated Products MKS Instruments, Inc. ON SemiconductorPower Integrations, Inc. Toshiba Corporation ZTE Corporation

25 ASSOCIATE MEMBERS ($15 K/year)Calsonic Kansei Corporation Crown International Cummins, Inc.Delphi Electronics & Safety Dyson Technology Ltd. Eaton Corporation, Innovation CenterEfficient Power Conversion Ford Motor Company GHO Ventures, LLC Inventronics (Hangzhou) Inc. Johnson Controls, Inc. Lite-On Technology CorporationLS Industrial Systems Co., Ltd. MetaMagnetics, Inc. Microsoft CorporationNetPower Technologies, Inc. OSRAM Sylvania, Inc. Rockwell AutomationSchaffner EMV AG Shindengen Electric Mfg. Co., Ltd. Silergy TechnologyTDK-Lambda Corporation Toyota Motor Corporation United Silicon Carbide, Inc.Universal Lighting Technologies, Inc.

12 AFFILIATE MEMBERS (in-kind contributions or <$15 K/year) ANSYS, Inc. CISSOID Electronic Concepts, Inc.Mentor Graphics Corporation Plexim GmbH Powersim, Inc.Rohde & Schwarz SIMPLIS Technologies, Inc. Synopsys, Inc.Tektronix, Inc. Transphorm, Inc. VPT, Inc.

CPES Industry Consortium 84 Members

June 30, 2015 db-35

Power Electronics Future is Bright!• Essential for societal energy needs from:

Retinal ImplantJ. G. KassakianIPEC, Niigata,

2005

organ implantscarbon-free energyto …

Source: Shell Global Scenarios

% of PrimaryEnergy

0%

20%

40%

60%

80%

Coal

Nuclear

Oil

Gas

Hydro

Traditional (Wood, etc.)

Wind, PV,other

renewables

1850 1875 1900 1925 1950 1975 2000 2025 2050Courtesy of GE Global Technology Center Source: Shell Global Scenarios

% of PrimaryEnergy

0%

20%

40%

60%

80%

Coal

Nuclear

Oil

Gas

Hydro

Traditional (Wood, etc.)

Wind, PV,other

renewables

1850 1875 1900 1925 1950 1975 2000 2025 2050Courtesy of GE Global Technology Center

June 30, 2015 db-36a

Power Electronics Future is Bright!

June 30, 2015 db-36b

from power electronics devices to electronic power · pdf filewhat is the future of power...

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