fmd: silicon detectors new ideas on electronics

20
FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 1 detectors New ideas on electronics FWD meeting, CERN, 17 September 2002 Børge Svane Nielsen Niels Bohr Institute 1. News from Si detector producers 2. New ideas on read-out electronics 3. Price update on FE electronics

Upload: benjamin-wise

Post on 30-Dec-2015

34 views

Category:

Documents


1 download

DESCRIPTION

FMD: Silicon detectors New ideas on electronics. FWD meeting, CERN, 17 September 2002 Børge Svane Nielsen Niels Bohr Institute. News from Si detector producers New ideas on read-out electronics Price update on FE electronics. FMD ring layout. Full FMD = 3 inner rings + - PowerPoint PPT Presentation

TRANSCRIPT

Page 1: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 1

FMD: Silicon detectorsNew ideas on electronicsFMD: Silicon detectorsNew ideas on electronics

FWD meeting, CERN, 17 September 2002Børge Svane Nielsen

Niels Bohr Institute

1. News from Si detector producers2. New ideas on read-out electronics3. Price update on FE electronics

Page 2: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 2

FMD ring layoutFMD ring layout

256

Inner:

Rin=4.2 cm

Rout=17.2 cm

Outer:

Rin=15.4 cm

Rout=28.4 cm

20x2x128=5120

10x2x256=5120

128Full FMD =Full FMD = 3 inner rings +3 inner rings + 2 outer rings2 outer rings

Page 3: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 3

Ring assemblyRing assembly

Si detector

FEE

Hybrid

Support

Honeycomb?

Page 4: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 4

Size limitationsSize limitationsInner segment Outer segment

143.68 mm145.81 mm

150 mmwafer

Hamamatsu: active max diameter 133.8 mmMicron: max 140 mm, but may extend beyond in 4 ”corners”ST: max 134 mm diameter

May be forced to some design modifications in 4 ”corners”

Page 5: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 5

Price quotesPrice quotes

Hamamatsu:Hamamatsu:

Micron Semiconductors:Micron Semiconductors:

ST Microelectronics:ST Microelectronics: For 500 m thick detectors:price indication: 600-700 $ per segmentplus ”some” design cost

design inner segment: 51.0 k€3 prototypes (inner): 11.8 k€design outer segment: 51.5 k€3 prototypes (outer): 11.8 k€production (100 pc): 154.8 k€ 280.9 k€ = 420 kCHF

design inner segment: 15.0 k£design outer segment: 15.0 k£silicon masks: 10.0 k£10++ prototypes: 35.0 k£production (100 pc): 100.0 k£ 175.0 k£ = 408 kCHFmounting & bonding: 50 k£ = 116 kCHF !!

Page 6: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 6

FMD electronicsFMD electronics

  Segments(wafers)

Phi sectorsRadial strips

HybridsChips/Hybrid

FE Chips FE Channels

            

   

Si 1 inner 10 20 256 10 16 160 5,120  

Si 1 outer 20 40 128 20 8 160 5,120 

Si 2 inner 10 20 256 10 16 160 5,120 

Si 2 outer 20 40 128 20 8 160 5,120 

Si 3 inner 10 20 256 10 16 160 5,120 

Total system 70 140 

70 

720 25,600 

Cable function#

linesCable type

# cables for inner ring

# cables for outer ring

FE controls 10 Shielded twisted pair 2 2

Analog data out 1 Shielded twisted pair 20 20

FE power 4 Shielded twisted pair 20 (or 10?) 20

Bias voltage 1 ?? 10 20

FMD channel count:

Tentative FMD cable count:

Page 7: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 7

Inner Si sensorInner Si sensor

256 strips

2 sectors

VA-32 preamp+shaper

Connector

Multiplexed read-out: 256 ch => 25 sec read-out time

Page 8: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 8

Hybrid with Viking chipsHybrid with Viking chips

VA preamp+shaper: 32 ch

Connector(s) forpower, control, read-out

Other components

Other components

Hybrid cards must contain: VA chips Power distribution/regulation Gate/strobe distribution Read-out control and clock Monitoring Bias voltage

Read-out architecture choice:1. Analog signals to ”shoe-boxes” (like SSD): long analog cables2. ADC on/near hybrids (like TPC): short analog, very long digital cables

Page 9: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 9

Reminder: VA architectureReminder: VA architecture

32/64/128input channels

Strobe from LVL1 trigger

Analog mux out 10 MHz

Page 10: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 10

Analog read-out architecture

Analog read-out architecture

Copy Belle or SSD:

Disadvantages: Long cables with analog signals: need buffer amp Find space for ”shoe-boxes” Probably substancial modifications of HALNY modules DCS separate architecture

Page 11: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 11

TPC FEE architectureTPC FEE architecture

http://ep-ed-alice-tpc.web.cern.ch/ep-ed-alice-tpc/

Page 12: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 12

ALTRO Layout and PackageALTRO Layout and Package

Data Memory1K x 40

ProcessingLogic 2.5 m (ST)

Page 13: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 13

ALICE TPC READOUT CHIP – Principle

ALICE TPC READOUT CHIP – Principle

16-ch signal digitizer and processor• HCMOS7 0.25 m (ST)• area: 64 mm2• power: 16 mW / ch• prototype delivery: Feb 02• 300 samples fully tested• delivery of 40,000 chips: Dec 02• cost: 5 SFr / ch

Page 14: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 14

ALTRO Chip – ADC ResolutionALTRO Chip – ADC Resolution

Integrated ADC better than external version!

Page 15: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 15

FMD read-out based on ALTRO

FMD read-out based on ALTRO

Can we use ALTRO as ADC in the FMD read-out, based on VA preamp-shaper chips ?

Yes, probably (needs some testing): run one VA mux output into one ALTRO input at 10 MHz use ALTRO as a pure ADC (forget the processor capabilities) store event in ALTRO digital memory

Advantages: Very short cables with analog signals ADC and event buffer directly on FMD detector Transmit digital data directly to DAQ We can make a simplified TPC read-out system DCS and trigger integral part of system

Page 16: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 16

TPC read-out architectureTPC read-out architecture

Loc

al

Con

trol

ler

DD

L - IN

TSlow

-Control

Interface

TTC-RX

BOARDCTRL

RCU

Slow – Control(1 Mbit – serial link)

Detector Link(100 MB / s)

(#216)

COUNTING ROOM

1

2

25

Each TPC Sector is served by 6 Readout Subsystems

Front-end bus(160 MB / sec)

LocalSlow- Control

Serial link

ON DETECTOR

Overall TPC: 4356 Front End Cards 216 Readout Control Units

FEC128 ch

DataCompr.

FEC128 ch

FEC128 ch

PASA – ADC – DIG.

Page 17: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 17

New FMD read-out architecture

New FMD read-out architecture

Loc

al

Con

trol

ler

DD

L - IN

TSlow

-Control

Interface

TTC-RX

BOARDCTRL

“RCU”

Slow – Control(1 Mbit – serial link)

Detector Link(100 MB / s)

(#216)

COUNTING ROOM

Each FMD (half)ring is separate Readout Subsystem

Analog serial link(10 MHz)

Local Read-out andSlow- Control

link

ON DETECTOR

Overall FMD: 70 Segments (hybrid cards) 5 or 10 Readout Control Units

Segment256/512 ch

ALTRO.

Segment256/512 ch

Segment256/512 ch

VA

Strongly inspired by TPC read-out, the FMD read-out could look like this:

Page 18: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 18

Read-out channel countRead-out channel count

segmentsFE

channelsVA chips

ALTRO chips

VA chip / ALTRO channel

Read-out time

Inner ring 10 5,120 1602

10

8

1

25-50 s

3-6 s

Outer ring 20 5,120 160

2

10

20

8

1

1

25-50 s

3-6 s

3-6 s

We only need 1 ALTRO per ring to stay within 100 s read-out of TPCBut: modularity suggests at least 1 RCU per half ringand: by adding more ALTRO in RCU, we get fast read-out

Page 19: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 19

Electronics costElectronics cost

IDEAS:IDEAS: VA modification+prototype: 55 k€VA production: 90 k€ ?hybrid design: 20 k€hybrid production: 30 k€ ?test equipment: 10 k€ 205 k€ = 300 kCHF

””RCU”:RCU”: board design and tests: in house - where?ALTRO chips: 5 k€board production (10 pc): 10 k€ 16 k€ = 24 kCHF + design

DAQ:DAQ:

DCS:DCS:

RORC: ?other: ?

power supplies: ?monitoring: ?

Page 20: FMD:     Silicon detectors New ideas on electronics

FWD meeting, CERN, 17 Sep 2002 Børge Svane Nielsen, NBI 20

ConclusionsConclusions

Si strip sensors are squeezed in 4 ”corners” by effective wafer size cut some acceptance? Quotations from 2 out of 3 known suppliers suggest price 400 kCHF Need more quotes on mounting & bonding – could be > 100 kCHF

Si strip sensors:Si strip sensors:

Electronics:Electronics:

FE electronics based on VA amplifiers still preferred BE layout has developed towards a simplified version of TPC proof of principle needed soon Price of electronics estimated at 300 kCHF (FE) + 50 kCHF (BE)